MITSUBISHI LSIs M5M51R16AWG -10LI, -12LI, -15LI, -10HI, -12HI, -15HI 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM PIN CONFIGURATION (TOP VIEW) DESCRIPTION The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology. The use of CMOS cells and periphery results in a high density and low power static RAM. The M5M51R16AWG can achieve low stand-by current and low operation current and ideal for the battery back-up application. The M5M51R16AWG is packaged in a 48-pin chip scale package which is a high reliability and high density surface mount device (SMD). Using this type of devices, it becomes very easy to design a small system. The M5M51R16AWG is fully compatible with the M5M51R16WG. 1 2 3 4 5 6 BC1 OE A6 A3 A0 NC DQ16 BC2 A7 A2 S DQ1 DQ14 DQ15 A5 A1 DQ2 DQ3 GND DQ13 NC A4 DQ4 VCC A B C D E VCC DQ12 GND NC DQ5 GND F DQ11 DQ10 A14 DQ7 DQ6 G FEATURE Power supply current Type name A9 Access time (max) M5M51R16AWG- 10LI M5M51R16AWG- 12LI M5M51R16AWG- 15LI 100ns 120ns 150ns M5M51R16AWG- 10HI M5M51R16AWG- 12HI M5M51R16AWG- 15HI 100ns 120ns 150ns Active (max) DQ9 NC A10 A13 W DQ8 NC A8 A11 A12 A15 NC H Stand-by (max) 4µA 10mA (1MHz) 2µA PIN CONFIGURATION (BOTTOM VIEW) • Single +1.8V~2.7V power supply • Low power down current 0.05µA(typ.) • Directly TTL compatible : All inputs and outputs • Easy memory expansion and power down by S,BC1 and BC2 • Data hold on +1.0V power supply • Three-state outputs : OR-tie capability • OE prevents data contention in the I/O bus • Common data I/O • Separate control of lower and upper bytes by BC1 and BC2 • Package 48-pin chip scale package(CSP) Ball pitch : 0.75mm Package size: 7.0mm x 8.5mm 6 5 4 3 2 1 NC A0 A3 A6 OE BC1 DQ1 S A2 A7 BC2 DQ16 DQ3 DQ2 A1 A5 DQ15 DQ14 VCC DQ4 A4 NC DQ13 GND GND DQ5 NC GND DQ12 VCC DQ6 DQ7 A14 A9 DQ10 DQ11 DQ8 W A13 A10 NC DQ9 A15 A12 A11 A8 NC A B C D E F APPLICATION Small capacity memory units. G H NC Outline 48FJA NC : NO CONNECTION Aug.1. 1998 MITSUBISHI ELECTRIC 1 MITSUBISHI LSIs M5M51R16AWG -10LI, -12LI, -15LI, -10HI, -12HI, -15HI 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM FUNCTION The operation mode of the M5M51R16A series are determined by a combination of the device control inputs S, W, OE, BC1 and BC2. Each mode is summarized in the function table. A write cycle is executed whenever the low level W overlaps with the low level BC1 and/or BC2 and the low level S. The address must be set up before the write cycle and must be stable during the entire cycle. The data is latched into a cell on the trailing edge of W, BC1, BC2 or S, whichever occurs first, requiring the set-up and hold time relative to these edge to be maintained. The output enable input OE directly controls the output stage. Setting the OE at a high level, the output stage is in a high-impedance state, and the data bus contention problem in the write cycle is eliminated. A read cycle is executed by setting W at a high level and OE at a low level while BC1 and/or BC2 and S are in an active state. (BC1 and/or BC2=L, S=L) When setting BC1 at a high level and the other pins are in an active state, upper-Byte are in a selectable mode in which both reading and writing are enabled, and lower -Byte are in a non-selectable mode. And when setting BC2 at a high level and the other pins are in an active state, lower-Byte are in a selectable mode in which both reading and writing are enabled, and upper -Byte are in a non-selectable mode. When setting BC1 and BC2 at a high level or S at a high level, the chips are in a non-selectable mode in which both reading and writing are disabled. In this mode, the output stage is in a high-impedance state, allowing OR -tie with other chips and memory expansion by BC1, BC2 and S. S, BC1 and BC2 control the power down feature. When S, BC1 and BC2 go high, the power supply current is reduced as low as the stand-by current which is specified as Icc3 or Icc4, and the memory data can be held at +1.0V power supply, enabling battery back-up operation during power-failure or power-down operation in the non-selected mode. FUNCTION TABLE S W OE BC1 BC2 L H L L L Mode Word Read Upper-Byte Read Icc DQ1~8 DQ9~16 Dout Active Dout Dout Active Dout High-Z Active Din Din Active High-Z Din Active Din High-Z Active L H L H L (Lower-Byte Non selection) High-Z L H L L H L L X L L L L X H L L L X L H L X H H H X X X X X H X X H X Lower-Byte Read (Upper-Byte Non selection) Word Write Upper-Byte Write (Lower-Byte Non selection) Lower-Byte Write (Upper-Byte Non selection) Output disable Non selection Non selection High-Z High-Z Active High-Z High-Z Stand-by High-Z High-Z Stand-by (High-Z=High-impedance) BLOCK DIAGRAM B6 DQ1 C5 DQ2 A4 D4 A3 A4 A2 B4 A1 C4 A0 A5 A15 H5 A14 F4 C6 DQ3 65536 WORDS x16 BITS E5 DQ5 ( 512 ROWS x 256 COLUMNS x 8 BLOCKS ) F6 DQ6 F5 DQ7 G6 DQ8 A13 G4 A12 H4 ADDRESS INPUTS D5 DQ4 G1 DQ9 DATA INPUTS/ OUTPUTS F2 DQ10 F1 DQ11 A8 H2 E2 DQ12 A9 F3 D2 DQ13 A10 G3 C1 DQ14 A11 H3 C2 DQ15 B1 DQ16 A7 B3 A5 C3 A6 A3 CLOCK GENERATOR CHIP SELECT S B5 INPUT WRITE CONTROL G5 W INPUT D6 Vcc OUTPUT ENABLE OE A2 INPUT E6 GND (0V) D1 GND (0V) BYTE CONTROL INPUTS Aug.1. 1998 E1 Vcc BC2 B2 E3 GND (0V) BC1 A1 MITSUBISHI ELECTRIC 2 MITSUBISHI LSIs M5M51R16AWG -10LI, -12LI, -15LI, -10HI, -12HI, -15HI 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM ABSOLUTE MAXIMUM RATINGS Symbol Vcc VI Vo Pd Topr Tstg Parameter Supply voltage Input voltage Output voltage Power dissipation Operating temperature Storage temperature Conditions With respect to GND Ta=25°C Ratings -0.2 ~ 4.6 -0.2* ~ Vcc+0.2(max.4.6V) 0 ~ Vcc 1 -40 ~ 85 -65 ~150 Unit V V V W °C °C * -1.0V in case of AC ( Pulse width ≤ 30ns ) DC ELECTRICAL CHARACTERISTICS Symbol ( Ta = - 40~85°C, Vcc = 1.8V~2.7V, unless otherwise noted ) Parameter Limits Conditions Min VIH High-level input voltage 0.7 x Vcc VIL Low-level input voltage -0.2* VOH High-level output voltage IOH = -0.1mA VOL Low-level output voltage IOL = 0.1mA Input current VI =0 ~Vcc II Io Output current in off-state Typ Max Vcc+0.2V V 0.4 1.6 BC1 and BC2 = VIH or S = VIH or OE = VIH, VI/O = 0~ Vcc BC1 and BC2 = VIL, S = VIL other inputs = VIH or VIL Output-open(duty 100%) Unit V V 0.2 V ±1 µA ±1 µA Min cycle 15 25 mA 1MHz 7 10 mA 10 15 mA ICC2B Byte operation(8bit) Active supply current (AC,TTL level) Min (BC1 = VIH and BC2 = VIL) or (BC1 = VIL and cycle BC2 = VIH) , S = VIL ,other inputs = VIH or VIL 1MHz Output-open(duty 100%) 5 8 mA ICC3 1) S≥Vcc-0.2V, other inputs = 0~Vcc 2) BC1 and BC2 ≥Vcc-0.2V,S≤0.2V, other inputs = 0~Vcc -LI 4 Stand-by current µA -HI 2 µA 0.3 mA ICC1W ICC2W ICC1B ICC4 Word operation(16bit) Active supply current (AC,TTL level) Stand-by current BC1 and BC2 = VIH or S = VIH, other inputs = 0~Vcc * -1.0V in case of AC ( Pulse width ≤ 30ns ) CAPACITANCE Symbol CI CO ( Ta = - 40 ~85°C, Vcc = 1.8V~2.7V, unless otherwise noted ) Parameter Input capacitance Output capacitance Conditions VI=GND, Vi=25mVrms, f=1MHz VO=GND, Vo=25mVrms, f=1MHz Min Limits Typ Max 6 10 Unit pF pF Note 1: Direction for current flowing into an IC is positive (no mark). Note 2: Typical value is Vcc = 2.0V, Ta = 25°C Note 3: CI,CO are periodically sampled and are not 100% tested. Aug.1. 1998 MITSUBISHI ELECTRIC 3 MITSUBISHI LSIs M5M51R16AWG -10LI, -12LI, -15LI, -10HI, -12HI, -15HI 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM AC ELECTRICAL CHARACTERISTICS ( Ta = - 40 ~85°C, Vcc = 1.8V~2.7V, unless otherwise noted ) (1) MEASUREMENT CONDITIONS Input pulse level • • • • • • • VIH = 0.7 x Vcc + 0.2V, VIL = 0.2V 1 TTL Input rise and fall time • • • • 5ns Reference level • • • • • • • • VOH = 0.9V, VOL = 0.9V DQ Output loads • • • • • • • • • Fig.1,CL = 30pF CL = 5pF ( for ten, tdis ) CL ( Including scope and JIG ) Transition is measured ±200mV from steady state voltage. ( for ten, tdis ) Fig.1 Output load (2)READ CYCLE Limits Symbol tCR ta(A) ta(S) ta(BC1) ta(BC2) ta(OE) tdis(S) tdis(BC1) tdis(BC2) tdis(OE) ten(S) ten(BC1) ten(BC2) ten(OE) tV(A) -10LI,-10HI Min Max 100 100 100 Parameter Read cycle time Address access time Chip select access time BC1 access time BC2 access time Output enable access time Output disable time after S high Output disable time after BC1 high Output disable time after BC2 high Output disable time after OE high Output enable time after S low Output enable time after BC1 low Output enable time after BC2 low Output enable time after OE low Data valid time after address change 10 10 10 5 10 -12LI,-12HI Min Max 120 120 120 120 120 60 40 40 40 40 10 10 10 5 10 -10LI,-10HI Min Max -12LI,-12HI Min Max 100 100 50 35 35 35 35 -15LI,-15HI Min Max 150 150 150 150 150 75 50 50 50 50 10 10 10 5 10 Unit -15LI,-15HI Min Max 150 100 0 120 120 120 120 60 0 0 50 50 5 5 10 10 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns (3)WRITE CYCLE Limits Symbol tCW tw(W) tsu(A) tsu(A-WH) tsu(BC1) tsu(BC2) tsu(S) tsu(D) th(D) trec(W) tdis(W) tdis(OE) ten(W) ten(OE) ten(BC1) ten(BC2) Aug.1. 1998 Parameter Write cycle time Write pulse width Address set up time Address set up time with respect to W BC1 setup time BC2 setup time Chip select set up time Data set up time Data hold time Write recovery time Output disable time after W low Output disable time after OE high Output enable time after W high Output enable time after OE low Output enable time after BC1 low Output enable time after BC2 low 100 75 0 85 85 85 85 50 0 0 MITSUBISHI ELECTRIC 120 85 0 100 100 100 100 55 0 0 40 40 35 35 5 5 10 10 5 5 10 10 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 4 MITSUBISHI LSIs M5M51R16AWG -10LI, -12LI, -15LI, -10HI, -12HI, -15HI 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM (4) TIMING DIAGRAMS Read cycle tCR A 0~15 tv(A) ta(A) ta(BC1) or ta(BC2) BC1 and/or BC2 (Note 4) tdis(BC1) or tdis(BC2) (Note 4) tdis(S) (Note 4) tdis(OE) (Note 4) ta(S) S (Note 4) ta(OE) ten(OE) OE (Note 4) ten(BC1) ten(BC2) ten(S) DQ1~16 DATA VALID W = "H" level Write cycle ( W control mode ) tCW A 0~15 tsu(BC1) or tsu(BC2) BC1 and/or BC2 (Note 4) (Note 4) tsu(S) S (Note 4) (Note 4) tsu(A-WH) OE tsu(A) tw(W) trec(W) W tdis(W) tdis(OE) ten(OE) ten(W) DATA IN DQ1~16 STABLE tsu(D) Aug.1. 1998 MITSUBISHI ELECTRIC th(D) 5 MITSUBISHI LSIs M5M51R16AWG -10LI, -12LI, -15LI, -10HI, -12HI, -15HI 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM Write cycle ( BC1, BC2 control mode ) tCW A 0~15 tsu(A) BC1 and/or BC2 tsu(BC1) or tsu(BC2) trec(W) S (Note 4) (Note 4) (Note 6) (Note 5) W (Note 4) (Note 4) tsu(D) th(D) DATA IN STABLE DQ1~16 Write cycle (S control mode) tCW A 0~15 BC1 and/or BC2 (Note 4) (Note 4) tsu(A) tsu(S) trec(W) S (Note 6) W (Note 5) (Note 4) (Note 4) tsu(D) DQ1~16 th(D) DATA IN STABLE Note 4: Hatching indicates the state is "don't care". Note 5: Writing is executed while S low overlaps BC1 and/or BC2 low and W low. Note 6: When the falling edge of W is simultaneously or prior to the falling edge of BC1 and/or BC2 or falling edge of S, the outputs are maintained in the high impedance state. Note 7:Don't apply inverted phase signal externally when DQ pin is output mode. Note 8:ten,tdis are periodically sampled and are not 100% tested. Note 9:tCR(Read cycle time) is defined as whole time from reading address set up to this address change under read mode set condition by S,W,OE,BC1 and/or BC2. Note 10:tCW(Write cycle time) is defined as whole time from writing address set up to this address change under write mode set condition by S,W,BC1 and/or BC2. Aug.1. 1998 MITSUBISHI ELECTRIC 6 MITSUBISHI LSIs M5M51R16AWG -10LI, -12LI, -15LI, -10HI, -12HI, -15HI 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM POWER DOWN CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS Symbol ( Ta = - 40~85°C, unless otherwise noted ) Parameter Test conditions Vcc(PD) Power down supply voltage Chip select input S VI(BC) Byte control inputs BC1 and BC2 ICC(PD) (2) TIMING REQUIREMENTS Unit V 0.7 x Vcc 1.0V ≤ Vcc(PD) ≤ 1.8V Power down supply current Max 1.0 1.8V ≤ Vcc(PD) VI(S) Limits Typ Min V Vcc(PD) 1.8V ≤ Vcc(PD) 0.7 x Vcc 1.0V ≤ Vcc(PD) ≤ 1.8V V Vcc(PD) Vcc = 2.0V 1) S ≥ Vcc - 0.2V other inputs = 0~Vcc 2) BC1 and BC2 ≥ Vcc - 0.2V S ≤ 0.2V,other inputs = 0~Vcc -LI 2 µA -HI 0.05 1 ( Ta = - 40 ~85°C, unless otherwise noted ) Limits Symbol Parameter Test conditions tsu(PD) Power down set up time trec(PD) Power down recovery time Min Typ Max Unit 0 ns 5 ms (3) POWER DOWN CHARACTERISTICS S control mode Vcc tsu(PD) 1.8V 1.8V trec(PD) 0.7 x Vcc 0.7 x Vcc S S ≥ Vcc BC1 and BC2 control mode Vcc tsu(PD) 1.8V 1.8V trec(PD) 0.7 x Vcc 0.7 x Vcc BC1 and BC2 BC1 and BC2 ≥ Vcc Aug.1. 1998 MITSUBISHI ELECTRIC 7