CA3102 Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which comprise the amplifiers are general purpose devices which exhibit low 1/f noise and a value of fT in excess of 1GHz. These features make the CA3102 useful from DC to 500MHz. Bias and load resistors have been omitted to provide maximum application flexibility. File Number Features • Power Gain 23dB (Typ). . . . . . . . . . . . . . . . . . . . . 200MHz • Noise Figure 4.6dB (Typ) . . . . . . . . . . . . . . . . . . . 200MHz • Two Differential Amplifiers on a Common Substrate • Independently Accessible Inputs and Outputs • Full Military Temperature Range . . . . . . . -55oC to 125oC Applications • VHF Amplifiers The monolithic construction of the CA3102 provides close electrical and thermal matching of the amplifiers. This feature makes this device particularly useful in dual channel applications where matched performance of the two channels is required. • VHF Mixers The CA3102 has a separate substrate connection for greater design flexibility. • Product Detectors Ordering Information • Balanced Quadrature Detectors PART NUMBER (BRAND) TEMP. RANGE (oC) PACKAGE PKG. NO. 611.6 • Multifunction Combinations - RF/Mixer/Oscillator; Converter/IF • IF Amplifiers (Differential and/or Cascode) • Doubly Balanced Modulators and Demodulators • Cascade Limiters • Synchronous Detectors CA3102E -55 to 125 14 Ld PDIP E14.3 • Balanced Mixers CA3102M (3102) -55 to 125 14 Ld SOIC M14.15 • Synthesizers • Balanced (Push-Pull) Cascode Amplifiers • Sense Amplifiers Pinout CA3102 (PDIP, SOIC) TOP VIEW 1 1 14 2 13 3 12 SUBSTRATE 4 11 SUBSTRATE 5 10 6 9 7 8 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 407-727-9207 | Copyright © Intersil Corporation 1999 CA3102 Absolute Maximum Ratings Thermal Information Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . 15V Collector-to-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-to-Substrate Voltage, VCIO (Note 1) . . . . . . . . . . . . . . 20V Emitter-to-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Thermal Resistance (Typical, Note 2) θJA (oC/W) PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110 SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205 Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW Maximum Junction Temperature (Plastic Package) . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. The collector of each transistor of the CA3102 is isolated from the substrate by an integral diode. The substrate (Terminal 9) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. 2. θJA is measured with the component mounted on an evaluation PC board in free air. TA = 25oC Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS - 0.25 5.0 mV - 0.3 3.0 µA - 13.5 33 µA - 1.1 - µV/oC DC CHARACTERISTICS FOR EACH DIFFERENTIAL AMPLIFIER Input Offset Voltage (Figures 1, 4) VIO Input Offset Current (Figure 1) IIO Input Bias Current (Figures 1, 5) IB I3 = I9 = 2mA ∆V IO ---------------∆T DC CHARACTERISTICS FOR EACH TRANSISTOR Temperature Coefficient Magnitude of Input Offset Voltage DC Forward Base-to-Emitter Voltage (Figure 6) Temperature Coefficient of Base-to-Emitter Voltage (Figure 6) Collector Cutoff Current (Figure 7) VBE VCE = 6V, IC = 1mA 674 774 874 mV ∆V BE --------------∆T VCE = 6V, IC = 1mA - -0.9 - mV/oC ICBO VCB = 10V, IE = 0 - 0.0013 100 nA Collector-to-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 15 24 - V Collector-to-Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 20 60 - V Collector-to-Substrate Breakdown Voltage V(BR)CIO IC = 10µA, IB = IE = 0 20 60 - V Emitter-to-Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 7 - V DYNAMIC CHARACTERISTICS FOR EACH DIFFERENTIAL AMPLIFIER 1/f Noise Figure (For Single Transistor) (Figure 12) NF f = 100kHz, RS = 500Ω, IC = 1mA - 1.5 - dB Gain Bandwidth Product (For Single Transistor) (Figure 11) fT VCE = 6V, IC = 5mA - 1.35 - GHz Note 3 - 0.28 - pF Note 4 - 0.15 - pF IC = 0, VCI = 5V - 1.65 - pF I3 = I9 = 2mA - 100 - dB Bias Voltage = -6V - 75 - dB 18 22 - dB Collector-Base Capacitance (Figure 8) Collector-Substrate Capacitance (Figure 8) CCB CCI Common Mode Rejection Ratio CMRR AGC Range, One Stage (Figure 2) AGC Voltage Gain, Single-Ended Output (Figures 2, 9, 10) A 2 IC = 0, VCB = 5V Bias Voltage = -4.2V, f = 10MHz CA3102 TA = 25oC (Continued) Electrical Specifications PARAMETER SYMBOL Insertion Power Gain (Figure 3) TEST CONDITIONS GP Noise Figure (Figure 3) NF Input Admittance Y11 Reverse Transfer Admittance Y12 Forward Transfer Admittance Y21 Output Admittance VCC = 12V, for Cascode Configuration I3 = I9 = 2mA. For Diff. Amp. Configuration I3 = I9 = 4mA (Each Collector IC ≅ 2mA) f = 200MHz Y22 MIN TYP MAX UNITS Cascode - 23 - dB Cascode - 4.6 - dB Cascode (Figures 14, 16, 18) - 1.5 + j2.45 - mS Diff. Amp. (Figures 15, 17, 19) - 0.878 + j1.3 - mS Cascode - 0.0 - j0.008 - mS Diff. Amp. - 0.0 - j0.013 - mS Cascode (Figures 26, 28, 30) - 17.9 - j30.7 - mS Diff. Amp. (Figures 27, 29, 31) - -10.5 + j13 - mS Cascode (Figures 20, 22, 24) - -0.503 - j15 - mS Diff. Amp. (Figures 21, 23, 25) - 0.071 + j0.62 - mS NOTES: 3. Terminals 1 and 14 or 7 and 8. 4. Terminals 13 and 4 or 6 and 11. Schematic Diagram CA3102E, CA3102M 1 14 13 Q2 4 12 Q1 2 7 6 Q6 5 SUBSTRATE 11 Q5 10 Q3 3 3 8 Q4 9 CA3102 Test Circuits +6V 1kΩ V+ (+6V) VOUT +1V (7) 14 1kΩ S2 1kΩ VO M 1kΩ 10µF S2 VIN M (8) 13 (6) Q2 (Q6) 1 Q1 (Q5) 100Ω S1 4 (11) 100Ω S1 (10) -1V BIAS VOLTAGE 5 VX M Q3 (Q4) 2 3 (9) 500Ω 12 I3 or I9 V- (-6V) -6V FIGURE 1. DC CHARACTERISTICS TEST CIRCUIT FOR CA3102 FIGURE 2. AGC RANGE AND VOLTAGE GAIN TEST CIRCUIT FOR CA3102 1/2 CA3102 14(7) Q2 (Q6) 1(8) 0.005µF 5(12) Q1 (Q5) SUBSTRATE Q3 (Q4) 2 (10) 3 (9) 4 (11) 13 (6) 2.7pF 5.6pF INPUT RG = 50Ω L1 C1 5µF 100Ω 6V 2+ 0.001 µF OUTPUT RL = 50Ω 5pF C2 L2 0.001µF 0.001µF 0.001µF MA 2kΩ 100pF 13kΩ 1kΩ 0.001µF 100pF FERRITE BEADS 100pF 5kΩ NOTES: 5. Numbers in parentheses refer to the other half of the CA3102. 6. L1, L2 - Approximately 1/2 Turn #18 Tinned Copper Wire, 5/8” Diameter. 470pF 7. C1, C2 - 15pF Variable Capacitors (Hammarlund, MAC-15; or Equivalent). 10kΩ +12V 0.001µF FIGURE 3. 200MHz CASCODE POWER GAIN AND NOISE FIGURE TEST CIRCUIT 4 CA3102 Typical Performance Curves 100 0.5 INPUT BIAS CURRENT (µA) INPUT OFFSET VOLTAGE (mV) TA = 25oC 0.4 0.3 0.2 0.1 1 EMITTER CURRENT (mA) 10 TA = -40oC TA = 25oC TA = 85oC 1.0 0.1 0.1 10 FIGURE 4. INPUT OFFSET VOLTAGE vs EMITTER CURRENT 1.0 EMITTER CURRENT (mA) 10 FIGURE 5. INPUT BIAS CURRENT vs EMITTER CURRENT 1.0 COLLECTOR CUTOFF CURRENT (pA) BASE-TO-EMITTER VOLTAGE (V) 1000 TA = 85oC TA = 25oC TA = -40oC 0.9 0.8 0.7 0.6 0.5 0.1 1.0 COLLECTOR CURRENT (mA) 3 VCB = 10V 100 VCB = 5V 10 1.0 0.1 0.01 -100 10 FIGURE 6. BASE-TO-EMITTER VOLTAGE vs COLLECTOR CURRENT VCB = 15V -50 -25 0 25 TEMPERATURE (οC) 50 75 100 FIGURE 7. COLLECTOR CUTOFF CURRENT vs TEMPERATURE 70 TA = 25oC TA = 25oC V+ = 6V, V- = -6V f = 1kHz 60 VOLTAGE GAIN (dB) 50 CAPACITANCE (pF) -75 2 CCI 1 TERMINALS 14 AND 1; 7 AND 8 TERMINALS 13 AND 4; 6 AND 11 40 30 20 10 0 -10 -20 -30 -40 CCB -50 0 0 1 2 3 4 5 6 7 8 9 BIAS VOLTAGE (V) 10 11 12 13 FIGURE 8. CAPACITANCE vs DC BIAS VOLTAGE 5 14 0 -1 -2 -3 -4 -5 -6 BIAS VOLTAGE ON TERMINALS 2 AND 10 (V) FIGURE 9. VOLTAGE GAIN vs DC BIAS VOLTAGE -7 CA3102 Typical Performance Curves (Continued) 2.0 40 30 25 20 15 10 5 0 0.01 1.0 FREQUENCY (MHz) 10 NOISE FIGURE (dB) 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 100 FIGURE 10. VOLTAGE GAIN vs FREQUENCY 30 TA = 25oC 1.9 0.8 0.1 TA = 25oC RSOURCE = 500Ω 0 2 3 4 5 6 7 8 9 10 11 12 13 COLLECTOR CURRENT (mA) TA = 25oC f = 10Hz 14 f = 100Hz 20 f = 1kHz f = 10kHz f = 100kHz f = 10Hz f = 100Hz RSOURCE = 1kΩ 30 10 1 FIGURE 11. GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT NOISE FIGURE (dB) VOLTAGE GAIN (dB) 35 GAIN BANDWIDTH PRODUCT (GHz) TA = 25oC 20 f = 1kHz f = 10kHz 10 f = 100kHz 0 0.01 0 0.01 0.1 1.0 COLLECTOR CURRENT (mA) FIGURE 12. 1/f NOISE FIGURE vs COLLECTOR CURRENT 6 20 15 1.5 1.0 10 g11 5 0.5 b11 0 10 102 FREQUENCY (MHz) 0 103 FIGURE 14. INPUT ADMITTANCE (Y11) vs FREQUENCY 6 INPUT CONDUCTANCE (g11) 2.0 OR SUSCEPTANCE (b11) (mS) CASCODE AMPLIFIER VCC = 12V I3 = I9 = 2mA TA = 25oC INPUT SUSCEPTANCE (b11) (mS) INPUT CONDUCTANCE (g11) (mS) FIGURE 13. 1/f NOISE FIGURE vs COLLECTOR CURRENT 25 2.5 0.1 1.0 COLLECTOR CURRENT (mA) DIFFERENTIAL AMPLIFIER VCC = 12V I3 = I9 = 4mA TA = 25oC 5 4 b11 3 2 g11 1 0 10 102 FREQUENCY (MHz) FIGURE 15. INPUT ADMITTANCE (Y11) vs FREQUENCY 103 CA3102 CASCODE AMPLIFIER I3 = I9 = 2mA f = 200MHz TA = 25oC 3 INPUT CONDUCTANCE OR SUSCEPTANCE (mS) (Continued) b11 2 g11 1 DIFFERENTIAL AMPLIFIER I3 = I9 = 4mA f = 200MHz TA = 25oC 3 INPUT CONDUCTANCE OR SUSCEPTANCE (mS) Typical Performance Curves 0 2 b11 1 g11 0 0 10 20 30 0 40 10 FIGURE 16. INPUT ADMITTANCE (Y11) vs COLLECTOR SUPPLY VOLTAGE CASCODE AMPLIFIER VCC = 12V f = 200MHz TA = 25oC 4 3 b11 2 g11 1 0 g11 2 b11 1 0 0 2 4 6 8 0 EMITTER CURRENT (I3 OR I9) (mA) 5 10 15 20 EMITTER CURRENT (I3 OR I9) (mA) FIGURE 18. INPUT ADMITTANCE (Y11) vs EMITTER CURRENT FIGURE 19. INPUT ADMITTANCE (Y11) vs EMITTER CURRENT 3 4 1 OUTPUT CONDUCTANCE OR SUSCEPTANCE (mS) CASCODE AMPLIFIER VCC = 12V I3 = I9 = 2mA TA = 25oC 2 OUTPUT CONDUCTANCE OR SUSCEPTANCE (mS) 40 DIFFERENTIAL AMPLIFIER VCC = 12V f = 200MHz TA = 25oC 3 INPUT CONDUCTANCE OR SUSCEPTANCE (mS) INPUT CONDUCTANCE OR SUSCEPTANCE (mS) 5 30 FIGURE 17. INPUT ADMITTANCE (Y11) vs COLLECTOR SUPPLY VOLTAGE 7 6 20 COLLECTOR SUPPLY VOLTAGE (V) COLLECTOR SUPPLY VOLTAGE (V) 0 g22 -1 b22 -2 -3 -4 DIFFERENTIAL AMPLIFIER VCC = 12V I3 = I9 = 4mA 3 TA = 25oC 2 b22 1 0 -1 g22 -5 -6 10 102 FREQUENCY (MHz) 103 FIGURE 20. OUTPUT ADMITTANCE (Y22) vs FREQUENCY 7 -2 10 102 103 FREQUENCY (MHz) FIGURE 21. OUTPUT ADMITTANCE (Y22) vs FREQUENCY CA3102 Typical Performance Curves g22 CASCODE AMPLIFIER I3 = I9 = 2mA f = 200MHz TA = 25oC -1 b22 -2 b22 0.4 0.2 g22 0 -3 0 10 20 30 0 40 10 FIGURE 22. OUTPUT ADMITTANCE (Y22) vs COLLECTOR SUPPLY VOLTAGE 30 40 FIGURE 23. OUTPUT ADMITTANCE (Y22) vs COLLECTOR SUPPLY VOLTAGE OUTPUT CONDUCTANCE OR SUSCEPTANCE (mS) CASCODE AMPLIFIER VCC = 12V f = 200MHz TA = 25oC OUTPUT CONDUCTANCE OR SUSCEPTANCE (mS) 20 COLLECTOR SUPPLY VOLTAGE (V) COLLECTOR SUPPLY VOLTAGE (V) g22 0 -1 -2 b22 DIFFERENTIAL AMPLIFIER VCC = 12V f = 200MHz TA = 25oC 1 b22 g22 0 -3 -1 0 2 4 6 0 8 5 EMITTER CURRENT (I3 OR I9) (mA) 50 TA = 25oC g21 40 30 20 10 0 0 -10 -20 b21 -20 10 102 FREQUENCY (MHz) -40 103 FIGURE 26. FORWARD TRANSFER ADMITTANCE (Y21) vs FREQUENCY 8 15 20 FIGURE 25. OUTPUT ADMITTANCE (Y22) vs EMITTER CURRENT 50 FORWARD TRANSFER CONDUCTANCE OR SUSCEPTANCE (mS) CASCODE AMPLIFIER VCC = 12V I3 = I9 = 2mA FORWARD TRANSFER SUSCEPTANCE (mS) 70 60 10 EMITTER CURRENT (I3 OR I9) (mA) FIGURE 24. OUTPUT ADMITTANCE (Y22) vs EMITTER CURRENT FORWARD TRANSFER CONDUCTANCE (mS) DIFFERENTIAL AMPLIFIER I3 = I9 = 4mA f = 200MHz TA = 25oC 0.6 OUTPUT CONDUCTANCE OR SUSCEPTANCE (mS) OUTPUT CONDUCTANCE OR SUSCEPTANCE (mS) 0 (Continued) DIFFERENTIAL AMPLIFIER VCC = 12V I3 = I9 = 4mA 40 30 TA = 25oC 20 b21 10 0 g21 -10 -20 -30 -40 10 102 FREQUENCY (MHz) 103 FIGURE 27. FORWARD TRANSFER ADMITTANCE (Y21) vs FREQUENCY CA3102 Typical Performance Curves (Continued) FORWARD TRANSFER CONDUCTANCE OR SUSCEPTANCE (mS) FORWARD TRANSFER CONDUCTANCE OR SUSCEPTANCE (mS) 20 20 g21 10 CASCODE AMPLIFIER I3 = I9 = 2mA f = 200MHz TA = 25oC 0 -10 -20 -30 b21 15 b21 10 5 DIFFERENTIAL AMPLIFIER I3 = I9 = 4mA f = 200MHz TA = 25oC 0 -5 -10 g21 -15 0 5 10 15 20 25 30 COLLECTOR SUPPLY VOLTAGE (V) 35 0 20 30 40 COLLECTOR SUPPLY VOLTAGE (V) FIGURE 28. FORWARD TRANSFER ADMITTANCE (Y21) vs COLLECTOR SUPPLY VOLTAGE FIGURE 29. FORWARD TRANSFER ADMITTANCE (Y21) vs COLLECTOR SUPPLY VOLTAGE 40 50 30 FORWARD TRANSFER CONDUCTANCE OR SUSCEPTANCE (mS) FORWARD TRANSFER CONDUCTANCE OR SUSCEPTANCE (mS) 10 g21 20 10 0 CASCODE AMPLIFIER VCC = 12V f = 200MHz TA = 25oC -10 -20 -30 -40 -50 -60 b21 -70 DIFFERENTIAL AMPLIFIER VCC = 12V f = 200MHz TA = 25oC 40 30 b21 20 10 0 -10 g21 -20 -80 0 2 4 6 8 10 EMITTER CURRENT (I3 OR I9) (mA) 12 FIGURE 30. FORWARD TRANSFER ADMITTANCE (Y21) vs EMITTER CURRENT 9 14 0 4 8 12 16 EMITTER CURRENT (I3 OR I9) (mA) FIGURE 31. FORWARD TRANSFER ADMITTANCE (Y21) vs EMITTER CURRENT CA3102 Dual-In-Line Plastic Packages (PDIP) E14.3 (JEDEC MS-001-AA ISSUE D) N 14 LEAD DUAL-IN-LINE PLASTIC PACKAGE E1 INDEX AREA 1 2 3 INCHES N/2 -B- -AE D BASE PLANE -C- A2 SEATING PLANE A L D1 e B1 D1 A1 eC B 0.010 (0.25) M C A B S SYMBOL MIN MAX MIN MAX NOTES A - 0.210 - 5.33 4 A1 0.015 - 0.39 - 4 A2 0.115 0.195 2.93 4.95 - B 0.014 0.022 0.356 0.558 - C L B1 0.045 0.070 1.15 1.77 8 eA C 0.008 0.014 C D 0.735 0.775 D1 0.005 - 0.13 - 5 E 0.300 0.325 7.62 8.25 6 E1 0.240 0.280 6.10 7.11 5 eB NOTES: 1. Controlling Dimensions: INCH. In case of conflict between English and Metric dimensions, the inch dimensions control. 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication No. 95. 4. Dimensions A, A1 and L are measured with the package seated in JEDEC seating plane gauge GS-3. 5. D, D1, and E1 dimensions do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.010 inch (0.25mm). 6. E and eA are measured with the leads constrained to be perpendicular to datum -C- . 7. eB and eC are measured at the lead tips with the leads unconstrained. eC must be zero or greater. 8. B1 maximum dimensions do not include dambar protrusions. Dambar protrusions shall not exceed 0.010 inch (0.25mm). 9. N is the maximum number of terminal positions. 10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3, E28.3, E42.6 will have a B1 dimension of 0.030 - 0.045 inch (0.76 1.14mm). 10 MILLIMETERS e 0.100 BSC eA 0.300 BSC eB - L 0.115 N 0.204 14 0.355 18.66 19.68 5 2.54 BSC - 7.62 BSC 6 0.430 - 0.150 2.93 14 10.92 7 3.81 4 9 Rev. 0 12/93 CA3102 Small Outline Plastic Packages (SOIC) M14.15 (JEDEC MS-012-AB ISSUE C) N INDEX AREA H 0.25(0.010) M 14 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE B M E INCHES -B- 1 2 3 L SEATING PLANE -A- h x 45o A D -C- α e B 0.25(0.010) M C 0.10(0.004) C A M SYMBOL MIN MAX MIN MAX NOTES A 0.0532 0.0688 1.35 1.75 - A1 0.0040 0.0098 0.10 0.25 - B 0.013 0.020 0.33 0.51 9 C 0.0075 0.0098 0.19 0.25 - D 0.3367 0.3444 8.55 8.75 3 E 0.1497 0.1574 3.80 4.00 4 e A1 B S NOTES: 1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication Number 95. 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 6. “L” is the length of terminal for soldering to a substrate. 7. “N” is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch). 10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. MILLIMETERS 0.050 BSC 1.27 BSC - H 0.2284 0.2440 5.80 6.20 - h 0.0099 0.0196 0.25 0.50 5 L 0.016 0.050 0.40 1.27 6 N α 14 0o 14 8o 0o 7 8o Rev. 0 12/93 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 11 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029