UTC BC807L-X-AL3-R Switching and amplifier application Datasheet

UNISONIC TECHNOLOGIES CO., LTD
BC807/BC808
PNP SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
APPLICATIONS
„
FEATURES
* Suitable for AF-Driver stages and low power output stages
* Complement to BC817 / BC818
Lead-free:
BC807L/BC808L
Halogen-free: BC807G/BC808G
„
ORDERING INFORMATION
Normal
BC807-x-AE3-R
BC808-x-AE3-R
BC807-x-AL3-R
BC808-x-AL3-R
„
Ordering Number
Lead Free
BC807L-x-AE3-R
BC808L-x-AE3-R
BC807L-x-AL3-R
BC808L-x-AL3-R
Halogen Free
BC807G-x-AE3-R
BC808G-x-AE3-R
BC807G-x-AL3-R
BC808G-x-AL3-R
Package
SOT-23
SOT-23
SOT-323
SOT-323
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
MARKING
807-16
807-25
807-40
9FC
808-16
808-25
808-40
9GC
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
L: Lead Free
G: Halogen Free
L: Lead Free
G: Halogen Free
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BC807/BC808
„
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Voltage
RATINGS
UNIT
-50
V
VCES
-30
V
Collector-Emitter Voltage
-45
V
VCEO
-25
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current (DC)
IC
-800
mA
Collector Dissipation
PC
310
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
SYMBOL
BC807
BC808
BC807
BC808
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)
PARAMETER
SYMBOL
BC807
Collector-Emitter Breakdown Voltage
BC808
BC807
Collector-Emitter Breakdown Voltage
BC808
Emitter-Base Breakdown Voltage
Collector Cut-OFF Current
Emitter Cut-OFF Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
„
TEST CONDITIONS
BVCEO
IC=-10mA, IB=0
BVCES
IC=-0.1mA, VBE=0
BVEBO
ICES
IEBO
hFE1
hFE2
VCE(SAT)
VBE(ON)
fT
Cob
IE=-0.1mA, IC=0
VCE=-25V, VBE=0
VEB=-4V, IC=0
IC=-100mA, VCE=-1V
IC=-300mA, VCE=-1V
IC=-500mA, IB=-50mA
IC=-300mA, VCE=-1V
VCE=-5V, IC=-10mA, f=50MHz
VCB=-10V, f=1MHz
MIN
-45
-25
-50
-30
-5
TYP
100
60
MAX UNIT
V
V
V
V
V
-100 nA
-100 nA
630
-0.7
-1.2
100
12
V
V
MHz
pF
CLASSIFICATION OF hFE
RANK
hFE1
hFE2
16
100-250
60-
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
25
160-400
100-
40
250-630
170-
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TYPICAL CHARACTERISTICS
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
DC Current Gain
1000
VCE=-2.0V
PULSE
-10
IC=10IB
PULSE
VCE(SAT)
VCE=-1.0V
100
-1
10
-0.1
VBE(SAT)
1
-0.1
-1
-10
-100
-1000
-0.01
-0.1
Collector Current, IC(mA)
-1
-10
-100
Collector Current, IC(mA)
-1000
Capacitance, Cib, Cob (pF)
Collect current, IC(mA)
„
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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BC807/BC808
TYPICAL CHARACTERISTICS(Cont.)
Current Gain Bandwidth Product
Gain Bandwidth Product, fT (MHz)
„
PNP SILICON TRANSISTOR
1000
VCE=-5.0V
100
10
-1
-10
Collector Current, IC (mA)
-100
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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