UNISONIC TECHNOLOGIES CO., LTD BC807/BC808 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to BC817 / BC818 Lead-free: BC807L/BC808L Halogen-free: BC807G/BC808G ORDERING INFORMATION Normal BC807-x-AE3-R BC808-x-AE3-R BC807-x-AL3-R BC808-x-AL3-R Ordering Number Lead Free BC807L-x-AE3-R BC808L-x-AE3-R BC807L-x-AL3-R BC808L-x-AL3-R Halogen Free BC807G-x-AE3-R BC808G-x-AE3-R BC807G-x-AL3-R BC808G-x-AL3-R Package SOT-23 SOT-23 SOT-323 SOT-323 Pin Assignment 1 2 3 E B C E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel Tape Reel MARKING 807-16 807-25 807-40 9FC 808-16 808-25 808-40 9GC www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd L: Lead Free G: Halogen Free L: Lead Free G: Halogen Free 1 of 4 QW-R206-026,D BC807/BC808 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Emitter Voltage RATINGS UNIT -50 V VCES -30 V Collector-Emitter Voltage -45 V VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -800 mA Collector Dissipation PC 310 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL BC807 BC808 BC807 BC808 ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted) PARAMETER SYMBOL BC807 Collector-Emitter Breakdown Voltage BC808 BC807 Collector-Emitter Breakdown Voltage BC808 Emitter-Base Breakdown Voltage Collector Cut-OFF Current Emitter Cut-OFF Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance TEST CONDITIONS BVCEO IC=-10mA, IB=0 BVCES IC=-0.1mA, VBE=0 BVEBO ICES IEBO hFE1 hFE2 VCE(SAT) VBE(ON) fT Cob IE=-0.1mA, IC=0 VCE=-25V, VBE=0 VEB=-4V, IC=0 IC=-100mA, VCE=-1V IC=-300mA, VCE=-1V IC=-500mA, IB=-50mA IC=-300mA, VCE=-1V VCE=-5V, IC=-10mA, f=50MHz VCB=-10V, f=1MHz MIN -45 -25 -50 -30 -5 TYP 100 60 MAX UNIT V V V V V -100 nA -100 nA 630 -0.7 -1.2 100 12 V V MHz pF CLASSIFICATION OF hFE RANK hFE1 hFE2 16 100-250 60- UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25 160-400 100- 40 250-630 170- 2 of 4 QW-R206-026,D BC807/BC808 TYPICAL CHARACTERISTICS Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage DC Current Gain 1000 VCE=-2.0V PULSE -10 IC=10IB PULSE VCE(SAT) VCE=-1.0V 100 -1 10 -0.1 VBE(SAT) 1 -0.1 -1 -10 -100 -1000 -0.01 -0.1 Collector Current, IC(mA) -1 -10 -100 Collector Current, IC(mA) -1000 Capacitance, Cib, Cob (pF) Collect current, IC(mA) PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-026,D BC807/BC808 TYPICAL CHARACTERISTICS(Cont.) Current Gain Bandwidth Product Gain Bandwidth Product, fT (MHz) PNP SILICON TRANSISTOR 1000 VCE=-5.0V 100 10 -1 -10 Collector Current, IC (mA) -100 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-026,D