DMTH4007LPSQ Green 40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI ADVANCED INFORMATION Product Summary Features BVDSS RDS(ON) Max 40V 6.5mΩ @ VGS = 10V 9.8mΩ @ VGS = 4.5V ID TC = +25°C 100A 80A Thermally Efficient Package – Cooler Running Applications High Conversion Efficiency Low RDS(ON) – Minimizes On-State Losses Low Input Capacitance Fast Switching Speed <1.1mm Package Profile – Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Case: PowerDI 5060-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) Motor Control DC-DC Converters Loadswitch ® PowerDI5060-8 Pin1 Top View Bottom View Internal Schematic S D S D S D G D Top View Pin Configuration Ordering Information (Note 5) Part Number DMTH4007LPSQ-13 Notes: Case PowerDI5060-8 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information PowerDI5060-8 D D D D =Manufacturer’s Marking H4007LS = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 14 = 2014) WW = Week Code (01 to 53) H4007LS YY WW S S S G PowerDI is a registered trademark of Diodes Incorporated. DMTH4007LPSQ Document number: DS37797 Rev.1 - 2 1 of 7 www.diodes.com November 2015 © Diodes Incorporated DMTH4007LPSQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage ADVANCED INFORMATION Continuous Drain Current, VGS = 10V (Note 6) Continuous Drain Current, VGS = 10V (Note 7) TA = +25°C TA = +70°C TC = +25°C TC = +100°C Value 40 ±20 15.5 13 ID Units V V A IS IDM IAS EAS 100 80 100 160 20 20 A A A mJ Symbol PD RθJA PD RθJC TJ, TSTG Value 2.7 55 150 1 -55 to +175 Units W °C/W W °C/W °C ID Maximum Continuous Body Diode Forward Current (Note 7) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH A Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Electrical Characteristics TA = +25°C TC = +25°C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 40 — — — — — — 1 ±100 V μA nA VGS = 0V, ID = 1mA VDS = 32V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS(ON) VSD — 5.4 8.4 — 3 6.5 9.8 1.2 V Static Drain-Source On-Resistance 1 — — — VDS = VGS, ID = 250μA VGS = 10V, ID = 20A VGS = 4.5V, ID = 20A VGS = 0V, IS = 20A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — 0.1 — — — — — — — — — — 1,895 485 20.9 0.62 12.4 29.1 5.9 3.5 5.4 4.5 16.2 3.5 30.6 28.1 — — — 1.8 — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 30V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 30V, ID = 20A ns VDD = 30V, VGS = 10V, ID = 20A, RG = 3Ω ns nC IF = 20A, di/dt = 100A/μs 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMTH4007LPSQ Document number: DS37797 Rev.1 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated DMTH4007LPSQ 30 50 VGS = 10V VDS = 5V 45 VGS = 4.5V 30 I D, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 35 VGS = 3.5V VGS = 5V 25 20 15 T A = 175°C 20 TA = 150°C T A = 125°C 15 T A = 85°C T A = 25°C TA = -55°C 10 10 5 VGS = 3V 5 VGS = 2.5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 0 2 10 VGS = 4.5V 8 VGS = 10V 6 4 2 0 0 1 1.5 2 2.5 3 3.5 V GS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 4 50 5 10 15 20 25 30 35 40 45 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 50 RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 12 45 40 35 30 25 20 15 I D = 20A 10 5 0 0.018 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 20 2.2 VGS = 4.5V 2 0.016 TA = 150°C TA = 175°C R DS(ON), DRAIN-SOURCE ON-RESI STANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) ADVANCED INFORMATION 25 VGS = 4V 40 0.014 0.012 T A = 125°C 0.01 T A = 85°C 0.008 T A = 25°C TA = -55°C 0.006 0.004 0.002 0 5 10 15 20 25 ID , DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMTH4007LPSQ Document number: DS37797 Rev.1 - 2 30 3 of 7 www.diodes.com 1.8 VGS = 10V 1.6 1.4 1.2 I D = 10A VGS = 5V I D = 5A 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature November 2015 © Diodes Incorporated DMTH4007LPSQ VGS(th), G ATE THRESHO LD VO LTAGE (V) RDS(ON), DRAI N-SO URCE O N-RESI STANCE ( ) 3 0.015 VGS = 10V I D = 10A 0.01 VGS = 5V I D = 5A 0.005 0 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature 30 2.4 2.1 1.8 I D = 1mA 1.5 1.2 I D = 250µA 0.9 0.6 0.3 0 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 10000 CT, JUNCTION CAPACITANCE (pF) I S, SOURCE CURRENT (A) T A = 175°C 20 TA = 150°C T A = 25°C TA = 125°C 15 T A = 85°C T A = -55°C 10 5 0 2.7 f=1MHz 25 Ciss 1000 Coss 100 Crss 10 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 1.5 10 0 5 10 15 20 25 30 35 40 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 1000 RDS (on) L imite d PW = 1 µs 8 6 ID , DRAIN CURRENT (A) VGS GATE T HRESHOLD VOLTA GE (V) ADVANCED INFORMATION 0.02 VDS = 30V I D = 20A 4 2 0 100 PW = 1 0 µs PW = 1 s PW = 1 0 ms 10 P W = 1 ms PW = 1 0 0 µs 1 TJ(max) = 175°C TC = 25°C VGS = 10V Single Pulse DUT on Infinite Heatsink 0 10 20 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMTH4007LPSQ Document number: DS37797 Rev.1 - 2 30 4 of 7 www.diodes.com 0.1 0.1 PW = 1 0 0 ms 1 10 100 VD S , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area November 2015 © Diodes Incorporated DMTH4007LPSQ r(t), TRANSIENTTHERMAL RESISTANCE ADVANCED INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA D = Single Pulse RJA = 72°C/W Duty Cycle, D = t1/ t2 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIMES (sec) Figure 13 Transient Thermal Resistance DMTH4007LPSQ Document number: DS37797 Rev.1 - 2 5 of 7 www.diodes.com November 2015 © Diodes Incorporated DMTH4007LPSQ Package Outline Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. PowerDI5060-8 D Detail A ADVANCED INFORMATION D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 b3 (4X) M M1 Detail A L1 G PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 — b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 — — L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 θ 10° 12° 11° θ1 6° 8° 7° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. PowerDI5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X DMTH4007LPSQ Document number: DS37797 Rev.1 - 2 G Y(4x) 6 of 7 www.diodes.com Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 November 2015 © Diodes Incorporated DMTH4007LPSQ IMPORTANT NOTICE ADVANCED INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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