IXD75IF650NA tentative XPT IGBT VCES = 650 V I C25 = 75 A VCE(sat) = 1.5 V Trench IGBT (medium speed) Copack Part number IXD75IF650NA 2 (C) (G) 1 3 (E) Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 2x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers ● Pumps, Fans ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131204 IXD75IF650NA tentative Ratings IGBT Symbol VCES Definition collector emitter voltage VGES max. DC gate voltage VGEM max. transient gate emitter voltage I C25 collector current Conditions min. TVJ = 25°C TC = 25°C I C100 V 6.5 V 0.1 mA I C = 1.2 mA; VGE = VCE TVJ = 25°C I CES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 25°C 1.5 TVJ = 150 °C t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area 300 V; IC = 5 5.8 75 A TVJ = 150 °C 75 A VGE = ±15 V; R G = 10 Ω VGE = ±15 V; R G = 10 Ω short circuit safe operating area VCEmax = 360 V t SC short circuit duration VCE = 360 V; VGE = ±15 V R G = 10 Ω; non-repetitive I SC R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink nA 130 nC 25 ns 45 ns 120 ns 40 ns 1.1 mJ 1.7 mJ TVJ = 150 °C VCEmax = 650 V SCSOA short circuit current mA 0.1 500 inductive load VCE = V 1.75 TVJ = 150 °C VCE = 300 V; VGE = 15 V; IC = A 1.7 gate emitter threshold voltage VGE = ±20 V V 75 A VGE(th) total gate charge tbd W IC = gate emitter leakage current V tbd collector emitter saturation voltage Q G(on) 20 tbd VCE(sat) I GES Unit V TC = 25°C total power dissipation 75 A; VGE = 15 V max. 650 TC = 100 °C Ptot I CM typ. TVJ = 150 °C 150 A 10 µs A 300 tbd K/W K/W 0.10 Diode VRRM max. repetitive reverse voltage TVJ = 25°C 650 V I F25 forward current TC = 25°C tbd A TC = 100 °C tbd A TVJ = 25°C 2.00 V 0.15 mA I F 100 75 A VF forward voltage IF = IR reverse current VR = VRRM TVJ = 125°C TVJ = 25°C TVJ = 125°C Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved VR = 300 V -di F /dt = 1200 A/µs IF = 75 A; VGE = 0 V TVJ = 125°C V 1.80 0.75 mA 7 µC 55 A 100 ns 1.5 mJ 1 K/W 0.10 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20131204 IXD75IF650NA tentative Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 175 °C -40 150 °C 150 °C 1) Weight 30 g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App d Spb/Apb VISOL 8.6 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Part number Product Marking I X D 75 IF 650 NA Part No. Logo XXXXX ® Zyyww abcd Assembly Line DateCode Ordering Standard V0 = = = = = = = IGBT XPT IGBT Trench 1 / std Current Rating [A] Copack Reverse Voltage [V] SOT-227B (minibloc) Assembly Code Part Number IXD75IF650NA Equivalent Circuits for Simulation I 10.5 t = 1 second isolation voltage t = 1 minute 1) terminal to terminal terminal to backside creepage distance on surface | striking distance through air Marking on Product IXD75IF650NA * on die level Delivery Mode Tube Quantity 10 Code No. 513716 T VJ = 175 °C R0 V 0 max threshold voltage V R 0 max slope resistance * mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131204 IXD75IF650NA tentative Outlines SOT-227B (minibloc) 2 (C) (G) 1 3 (E) IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131204 IXD75IF650NA tentative IGBT VGE = 15 V 140 120 13 V VGE = 15 V 17 V 19 V 140 120 11 V TVJ = 25°C 100 IC 100 [A] IC TVJ = 125°C 80 [A] 60 TVJ = 150°C 80 60 9V 40 40 20 20 0 0 0 1 2 3 0 1 2 3 4 5 160 200 VCE [V] VCE [V] Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 200 20 IC = 75 A VCE = 300 V 160 15 IC 120 TVJ = 25°C VGE TVJ = 125°C [A] 10 [V] 80 5 40 0 0 5 6 7 8 9 10 11 12 13 14 15 0 40 80 VGE [V] 120 QG [nC] Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 4.0 2.4 RG = 10 VCE = 300 V VGE = ±15 V TVJ = 150°C 3.2 Eon 2.0 Eoff 2.4 Eoff E [mJ] 1.6 E [mJ] 1.2 1.6 0.8 0.8 0.0 IC = 75 A VCE = 300 V VGE = ±15 V TVJ = 150°C Eon 0.4 0 40 80 120 160 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 4 8 12 16 20 24 RG [ ] Fig. 6 Typ. switching energy vs. gate resistance Data according to IEC 60747and per semiconductor unless otherwise specified 20131204 IXD75IF650NA tentative Diode 150 3.5 TVJ = 25°C 75 A VR = 300 V 3.0 TVJ = 150°C 100 TVJ = 150°C 2.5 IF 40 A Qrr 2.0 [A] [μC] 50 1.5 10 A 1.0 0 0 1 2 3 0.5 400 4 600 800 1000 1200 1400 1600 1800 2000 VF [V] diF /dt [A/μs] Fig. 1 Typ. Forward current versus VF 70 60 Fig. 2 Typ. reverse recov.charge Qrr vs. di/dt TVJ = 150°C 75 A VR = 300 V 40 A 200 TVJ = 150°C VR = 300 V 160 50 10 A Irr trr 40 120 [A] [ns] 30 80 75 A 40 A 20 10 A 10 400 600 40 400 800 1000 1200 1400 1600 1800 2000 600 800 1000 1200 1400 1600 1800 2000 diF /dt [A/μs] diF /dt [A/μs] Fig. 3 Typ. peak reverse current IRM vs. di/dt Fig. 4 Typ. recovery time trr versus di/dt 700 1.2 TVJ = 150°C 75 A VR = 300 V 600 1.0 40 A 500 Irr 0.8 Erec 400 Kf [μJ] 300 10 A 200 0.6 Qrr 0.4 75 A 300 V 1200 A/µs 0.2 100 400 0.0 600 800 1000 1200 1400 1600 1800 2000 diF /dt [A/μs] Fig. 5 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 0 20 40 60 80 100 120 140 160 TVJ [°C] Fig. 6 Dynamic parameters Qrr, Irr vs. TVJ Data according to IEC 60747and per semiconductor unless otherwise specified 20131204