NUP5150MU 5-Line Transient Voltage Suppressor Array This 5-line transient voltage suppressor array is designed for applications requiring transient voltage protection capability. It is intended for use in over-transient voltage and ESD sensitive equipment such as cell phones, portables, computers, printers and other applications. This device features a monolithic common anode design which protects five independent lines in a single UDFN package. This device is ideal for situations where board space is at a premium. http://onsemi.com UDFN6 5-LINE TRANSIENT VOLTAGE SUPPRESSOR Features PIN ASSIGNMENT •Protects up to 5 Lines in a Single UDFN Package •ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model •Compliance with IEC 61000-4-2 •This is a Pb-Free Device 1 6 2 5 3 4 Applications •Hand Held Portable Applications •Serial and Parallel Ports •Notebooks, Desktops, Servers PIN 1. 2. 3. 4. 5. 6. CATHODE ANODE CATHODE CATHODE CATHODE CATHODE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) Symbol Rating Value Unit TJ Operating Junction Temperature Range -40 to 125 °C TSTG Storage Temperature Range -55 to 150 °C TL Lead Solder Temperature – Maximum (10 seconds) 260 °C ESD Human Body Model (HBM) IEC 61000-4-2 Contact (ESD) 16000 8000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM UDFN6 CASE 517AA 5M G 1 5 M G = Specific Device Code = Month Code = Pb-Free Package *Specific Device Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device NUP5150MUTBG Package Shipping† UDFN6 3000/Tape & Reel (Pb-Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 September, 2007 - Rev. 0 1 Publication Order Number: NUP5150/D NUP5150MU ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Conditions Parameter Reverse Working Voltage (Note 1) Breakdown Voltage IT = 1 mA, (Note 2) Reverse Leakage Current Capacitance Symbol Min VRWM VBR 6.2 VRWM = 3 V IR - VR = 0 V, f = 1 MHz (Line to GND) CJ - Typ Max Unit - 5.0 V 6.8 7.2 V 0.1 mA 15 pF 12 1. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 2. VBR is measured at pulse test current IT. http://onsemi.com 2 NUP5150MU 100E-9 TA = 25 °C 12 REVERSE CURRENT (A) TA = 25°C 10 8 6 4 10E-9 TJ = 125 °C 1.0E-9 100E-12 TJ = 25 °C 10E-12 TJ = -40°C 2 0 0 1 2 4 3 5 1.0E-12 1 6 2 3 4 5 BIAS VOLTAGE (V) REVERSE VOLTAGE (V) Figure 1. Capacitance Figure 2. Typical Reverse Current vs. Reverse Voltage 1.0 TA = 25 °C FORWARD CURRENT (A) TYPICAL CAPACITANCE (pF) 1 MHz FREQUENCY 14 TJ = 125 °C 0.1 TJ = 25 °C 0.01 TJ = -40°C 0.001 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE (V) 1.8 2.0 Figure 3. Typical Forward Current vs. Forward Voltage http://onsemi.com 3 6 NUP5150MU PACKAGE DIMENSIONS UDFN6, 1.2x1.0, 0.4P CASE 517AA-01 ISSUE B PIN ONE REFERENCE 2X 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B D ÉÉÉ ÉÉÉ ÉÉÉ E DIM A A1 A3 b D E e L L2 TOP VIEW 2X 0.10 C (A3) 0.10 C MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.127 REF 0.15 0.25 1.20 BSC 1.00 BSC 0.40 BSC 0.30 0.40 0.40 0.50 A 10X 0.08 C 6X 5X 6X 0.42 C A1 1 MOUNTING FOOTPRINT* SEATING PLANE SIDE VIEW 0.22 L 3 L2 6X 0.40 PITCH b 0.10 C A B 0.05 C 6 4 DIMENSIONS: MILLIMETERS e NOTE 3 1.07 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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