, One. u TELEPHONE: (973) 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 Silicon NPN Power Transistor MJF18004 DESCRIPTION • Collector-Base Breakdown Voltage:V(BR)CBO=1000V(Min) • High Switching Speed *W ! •?''•• 3 PIN 1.BASE 1 COLLECTOR 3. EMITTER TO-220F package APPLICATIONS • Designed for use in 220V line-operated switchmode power 1 2 3 supplies and electronic light ballasts B ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER - C - -s- _ VALUE UNIT F VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage g V . Ic Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current 2 A IBM Base Current-Peak 4 A PD Total Power Dissipation@Tc=25°C 40 W Tj Junction Temperature 150 °C Tstg Storage Temperature -65~150 "C THERMAL CHARACTERISTICS PARAMETER MAX UNIT Rth j-c Thermal Rresistance, Junction to Case 3.12 •c/w Rth j-a Thermal Resistance, Junction to Ambient 62.5 "C/W _..._ • ? - } ' .,.::':: : '::J - : ' -D - N * tr.T_77^< u !: -,'.'; .'•", -•--' ,-•, "•",,,•:; SYMBOL - H t - R- <" '; i JA ,..,,;, K : . j „ mm DIM MIN A 1495 B 10.00 C 4.40 D 0.75 F 3.10 H 3.70 J 0.50 K 13.4 L 1.10 N 5.00 Q 2.70 R 2.20 S 2.65 U 6.40 MAX 15.05 10.10 4.60 0.80 3.30 3.90 0.70 13.6 1.30 5.20 2.90 2.40 2.85 6.60 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information Furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets nre current before placing orders. Quality Semi-Conductors Silicon NPN Power Transistor MJF18004 ELECTRICAL CHARACTERISTICS Tj=25'C unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage l c =0.1A;L=25mH VcE(sat)-1 Collector-Emitter Saturation Voltage lc=1 A;I B =0.1A TC=125'C 0.5 0.6 V VcE(sat)-2 Collector-Emitter Saturation Voltage I C =2A;I B =0.4A TC=125"C 0.45 0.8 V VcE(sat)-3 Collector-Emitter Saturation Voltage I C =2.5A;I B =0.5A 0.75 V VBE(sat)-1 Base-Emitter Saturation Voltage lc= 1A; IB= 0.1A 1.1 V VsE(sat)-2 Base-Emitter Saturation Voltage lc= 2A; IB= 0.4A 1.25 V VeE(sat)-3 Base-Emitter Saturation Voltage lc=2.5A; I B =0.5A 1.3 V CONDITIONS MIN TYP MAX 450 UNIT V VCES= RatedVCES;VEB= 0 TC=125'C 0.05 0.5 VOES= 800V TC=125-C 0.01 0.1 ICES Collector Cutoff Current ICEO Collector Cutoff Current VCE= RatedVcEo; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 9V; lc= 0 0.1 mA hpE-1 DC Current Gain lc= 1A ; VCE= 2.5V 12 hpE-2 DC Current Gain lc=1A;V CE =5V 14 hpE-3 DC Current Gain lc=2A;V C E=1V 6 hpE-4 DC Current Gain lc=10mA;VcE=5V 10 Current-Gain — Bandwidth Product lc= 0.5A;VCE= 10V;ftest=1.0MHz 13 MHz Output Capacitance |E= 0; VCB= 10V; ftest=1.0MHz 45 PF fr COB mA 36 Switching Times Resistive Load,Duty Cycled 10%,Pulse Width=20 u s ton Turn-on Time ts Storage Time tf Turn-off Time VCC=250V ,IC=2.5A lBi=lB2=0.5A 0.45 0.6 us 2 3 us 0.275 0.4 us