FJT44 tm NPN Epitaxial Silicon Transistor • High Voltage Transistor 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted a Value Units VCBO Symbol Collector-Base Voltage Parameter 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current 300 mA PC Collector Dissipation 2 W TJ Junction Temperature 150 °C TSTG Storage Temperature Range - 55 ~ +150 °C (Ta = 25 oC) * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* T =25°C unless otherwise noted a Symbol RθJA Parameter Thermal Resistance, Junction to Ambient Value Units 62.5 °C/W * Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm. mounting pad for the collector lead min. 6 cm 2 Electrical Characteristics* Symbol Ta = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 100uA, IE = 0 500 V BVCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 400 V BVEBO Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 6 V ICBO Collector-Base Cutoff Current VCB = 400V IE = 0 100 nA ICES Collector-Emitter Cutoff Current VCE = 400V, VBE = 0 500 nA IEBO Emitter-Base Cutoff Current VCE = 4V, IC = 0 100 nA hFE DC Current Gain VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA 40 50 45 40 200 VCE(sat) Collector-Emitter Saturation Voltage IC = 1mA, IB = 0.1mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA 0.4 0.5 0.75 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA 0.75 V Cobo Output Capacitance VCB = 20V, IE = 0, f = 1MHz 7 pF * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2006 Fairchild Semiconductor Corporation FJT44 Rev. B 1 www.fairchildsemi.com FJT44 NPN Epitaxial Silicon Transistor September 2006 10 160 VCC=150V IC/IB=10 o Ta=25 C VBE(off)=4V VCE=10V 140 100 80 t[us], TIME hFE, DC CURRENT GAIN 120 60 40 1 20 0 tf -20 td -40 1 10 100 1000 0.1 10000 1 10 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Turn-On Switching Times 1000 100 o VCC=150V IC/IB=10 Ta=25℃ Cib[pF],Cob[pF], CAPACITANCE Ta=25 C f=1MHz t[us], TIME 10 ts 1 tf 100 Cib 1 10 Cob 10 1 0.1 0.1 100 Figure 3. Turn-Off Switching Times 10 100 1000 Figure 4. Capacitance 1.0 0.5 VCE[V] COLLECTOR EMITTER VOLTAGE o Ta=25 C 0.8 VBE(sat) @IC/IB=10 [V], VOLTAGE 1 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT 0.6 VBE(on) @VCE=10V 0.4 0.2 0.0 0.1 VCE(sat)@IC/IB=10 1 10 100 o IC=10mA IC=1mA IC=50mA Ta=25 c 0.4 0.3 0.2 0.1 0.0 10 1000 IC[mA], COLLECTOR CURRENT 100 1000 10000 100000 IC[mA], COLLECTOR CURRENT Figure 5. On Voltage Figure 6. Collector Saturation Region 2 FJT44 Rev. B 100 IC[mA], COLLECTOR CURRENT www.fairchildsemi.com FJT44 NPN Epitaxial Silicon Transistor Typical Performance Characteristics FJT44 NPN Epitaxial Silicon Transistor Typical Performance Characteristics hFE, SMALL SIGNAL CURRENT GAIN 100 VCE=10V f=10MHz o Ta=25 C 10 1 0.1 0.1 1 10 100 1000 IC[mA], COLLECTOR CURRENT Figure 1. High Frequency Current Gain 3 FJT44 Rev. B www.fairchildsemi.com FJT44 NPN Epitaxial Silicon Transistor Mechanical Dimensions 3.00 ±0.10 4.60 ±0.25 6.50 ±0.20 (0.89) (0.95) (0.46) 1.60 ±0.20 2.30 TYP 7.00 ±0.30 (0.60) 0.70 ±0.10 (0.95) +0.04 0.06 –0.02 (0.60) 3.50 ±0.20 1.75 ±0.20 MAX1.80 0.65 ±0.20 0.08MAX SOT-223 ° 10 +0.10 0.25 –0.05 0°~ Dimensions in Millimeters 4 FJT44 Rev. B www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 5 FJT44 Rev. B www.fairchildsemi.com FJT44 NPN Epitaxial Silicon Transistor TRADEMARKS