PHILIPS LXE15450X Npn microwave power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
LXE15450X
NPN microwave power transistor
Product specification
Supersedes data of December 1994
File under Discrete Semiconductors, SC15
1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated common-emitter
structure provides high emitter
efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
• Internal input and output
prematching ensures a good
stability and allows an easier
design of circuits.
LXE15450X
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common emitter class AB
amplifier.
MODE OF
OPERATION
f
(GHz)
VCE
(V)
ICQ
(A)
PL1
(W)
Gpo
(dB)
Class AB (CW)
1.5
24
0.15
≥45
≥8
ηC
(%)
Zi; ZL
(Ω)
typ. 48 see Figs 8
and 9
PINNING - SOT439A
PIN
DESCRIPTION
1
collector
2
base
3
emitter connected to flange
APPLICATIONS
Intended for use in common-emitter,
class AB amplifiers in CW conditions
for professional applications between
1.5 GHz and 1.7 GHz.
1
ok, 4 columns
c
b
3
3
e
DESCRIPTION
2
MAM045
Top view
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package, with emitter connected to
flange.
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE15450X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
45
V
VCER
collector-emitter voltage
RBE = 220 Ω
−
30
V
VCEO
collector-emitter voltage
open base
−
25
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
9
A
Pi
input power
f = 1.5 GHz; VCE = 24 V; class AB
−
12
W
Ptot
total power dissipation
Tmb = 75 °C
−
70
W
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
−
200
°C
Tsld
soldering temperature
−
235
°C
t ≤ 10 s; note 1
Note
1. Up to 0.2 mm from ceramic.
MLC436
10
MLC437
80
handbook, halfpage
handbook, halfpage
P tot
(W)
IC
(A)
60
I
40
1
20
10 1
1
10
V CE (V)
0
10 2
0
50
100
150
200
o
T mb ( C)
Tmb ≤ 75 °C.
(I) Region of permissible DC operation.
Fig.2 DC SOAR.
1997 Feb 18
Fig.3 Power derating curve.
3
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE15450X
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting base
Tj = 100 °C
1.3
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
note 1
0.2
K/W
MAX.
UNIT
Note
1. See “Mounting recommendations in the General part of handbook SC15”.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
collector cut-off current
IE = 0; VCB = 20 V
−
4.5
mA
V(BR)CBO
collector-base breakdown voltage
IC = 22 mA
45
−
V
V(BR)CER
collector-emitter breakdown voltage
IC = 150 mA; RBE = 220 Ω
30
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = 22 mA
3
−
V
hFE
DC current gain
IC = 4.5 A; VCE = 3 V
15
100
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common-emitter class AB amplifier.
MODE OF
OPERATION
f
(GHz)
VCE
(V)
ICQ
(A)
PL1
(W)
Gpo
(dB)
ηC
(%)
Zi; ZL
(Ω)
Class AB (CW)
1.5
24
0.15
≥45
typ. 50
≥8
typ. 8.8
typ. 48
see Figs 8
and 9
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE15450X
30
handbook, full pagewidth
5.2 0.8
12.0
30
7.0
5.0
5.0
10.0
9.5
0.8
1.5
1.5
40
8.0
40
8.0
0.6
0.6
4.0
4.0
1.7
,
C5
1.5
V BB
VCC
C6
F1
input
L1
L2
C1
C4
C2
Rr
output
C3
Rr
MLC442
The test circuit is split into two independent halves each being 30 × 40 mm in size.
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr = 10.
Fig.4 Test circuit.
1997 Feb 18
5
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE15450X
PREMATCHING TEST
CIRCUIT
handbook, full pagewidth
BIAS CIRCUIT
VCC
R1
C6
TR1
C5
R2
F1
P1
D1
R3
L2
C7
L1
DUT
D2
MEA600
Fig.5 Class AB bias circuit.
List of components (see Figs 4 and 5)
COMPONENT
DESCRIPTION
VALUE
ORDERING INFORMATION
TR1
transistor, BD239 or equivalent
C1, C4
DC blocking chip capacitor
100 pF
C2, C3
trimmer capacitor
0.5 to 5 pF
Tekelec 721-1
C5, C6
feedthrough bypass capacitor
1500 pF
Erie 1250-003
C7
electrolytic capacitor
10 µF, >30 V
D1
diode BY239 or equivalent; note 1
D2
diode BY239 or equivalent; note 2
L1
4 turns 0.5 mm copper wire;
internal diameter = 2 mm
L2
3 turns 0.5 mm copper wire;
internal diameter = 2 mm
P1
linear potentiometer
4.7 kΩ
R1
resistor
100 Ω, 0.25 W
R2
resistor
10 kΩ, 0.25 W
R3
resistor
56 Ω, 0.25 W
F1
ferrite bead
Rr
copper rivet
Philips tube, 12NC = 4330 030 43081
4.2 × 2.2 × 3.2 mm (4B1)
Notes
1. In thermal contact with TR1.
2. In thermal contact with DUT.
1997 Feb 18
ATC 100A1201kp
6
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE15450X
MLC443
60
MLC444
20
handbook, halfpage
handbook, halfpage
d im
(dBc)
PL
(W)
25
I CQ =
75 mA
150 mA
300 mA
40
30
I CQ =
300 mA
35
20
75 mA
40
150 mA
45
0
0
2
4
6
8
P i (W)
0
10
10
20
30
40
Po (av) (W)
VCE = 24 V.
f 1 = 1500 MHz.
f 2 = 1500.2 MHz.
VCE = 24 V.
f = 1500 MHz.
Fig.7
Fig.6 Load power as a function of input power.
Intermodulation distortion as a function of
average output power.
Input and optimum load impedances
VCE = 24 V; ICQ = 0.15 A; typical values at PL = PL1 (see Figs 8 and 9).
1997 Feb 18
f
(GHz)
Zi
(Ω)
ZL
(Ω)
1.500
2.8 + j3.5
3.2 − j0.25
1.575
5.7 + j5.0
2.5 − j0.15
1.650
6.0 + j0.4
2.4 − j0.20
7
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE15450X
1
handbook, full pagewidth
0.5
0.2
2
1.2 GHz
5
1.3
10
Zi
+j
0
0.2
0.5
2
5
∞
10
1.4
–j
10
5
0.2
2
0.5
MLC445
1
VCE = 24 V; Zo = 10 Ω; ICQ = 0.15 A.
Fig.8 Input impedance as a function of frequency; typical values at PL = PL1.
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0
–j
0.2
0.5
2
5
∞
10
1.4 GHz 1.3 1.2
10
ZL
5
0.2
2
0.5
1
MLC446
VCE = 24 V; Zo = 10 Ω; ICQ = 0.15 A.
Fig.9 Optimum load impedance as a function of frequency; typical values at PL = PL1.
1997 Feb 18
8
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE15450X
PACKAGE OUTLINE
12.85 max
handbook, full pagewidth
0.15 max
6
max
3.3
2.9
1.6 max
3
23 max
seating plane
3.7
max
2.7
min
1
9.85
max
3.3
2.7
min
2
MBC881
8.25
16.5
Dimensions in mm.
Torque on screws: max. 0.4 Nm.
Recommended screw: M3.
Recommended pitch for mounting screws: 19 mm.
Fig.10 SOT439A.
1997 Feb 18
9
10.3
10.0
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE15450X
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 18
10
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE15450X
NOTES
1997 Feb 18
11
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© Philips Electronics N.V. 1997
SCA53
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127147/00/02/pp12
Date of release: 1997 Feb 18
Document order number:
9397 750 01781