BCR3AS-12A Triac Low Power Use REJ03G0290-0200 Rev.2.00 Nov 30, 2007 Features • IT (RMS) : 3 A • VDRM : 600 V • IFGTI , IRGTI, IRGT III : 15 mA (10 mA)Note5 • Non-Insulated Type • Planar Passivation Type • Lead Mounted Type Outline RENESAS Package code: PRSS0004ZD-D (Package name: DPAK(L)-3) 4 2, 4 1. 2. 3. 4. 3 1 T1 Terminal T2 Terminal Gate Terminal T2 Terminal 12 3 Applications Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blanket, washing machine, and other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Note1 Non-repetitive peak off-state voltage REJ03G0290-0200 Page 1 of 6 Rev.2.00 VDRM Voltage class 12 600 VDSM 720 Symbol Nov 30, 2007 Unit V V BCR3AS-12A Parameter RMS on-state current Symbol IT (RMS) RATINGS 3 Unit A Surge on-state current ITSM 30 A I2 t 3.7 A2s PGM PG (AV) VGM IGM Tj Tstg — 3 0.3 6 0.3 – 40 to +125 – 40 to +125 0.26 W W V A °C °C g I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine full wave Note3 360° conduction, Tc = 108°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger currentNote2 Ι ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. 3. 4. 5. Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.7 Unit mA V Test conditions Tj = 125°C, VDRM applied VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) — — — — — — 0.2 — — — — — — — — — 1.5 1.5 1.5 15Note5 15Note5 15Note5 — 3.8 V V V mA mA mA V °C/W Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 5 — — V/µs Tj = 125°C Tc = 25°C, ITM = 4.5 A, Instantaneous measurement Tj = 125°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured on the T2 tab. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT ≤ 10 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = –1.5 A/ms 3. Peak off-state voltage VD = 400 V REJ03G0290-0200 Page 2 of 6 Rev.2.00 Nov 30, 2007 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR3AS-12A Performance Curves 102 7 Tj = 25°C 5 3 2 Surge On-State Current (A) 100 7 5 3 2 0 1 2 3 4 30 25 20 15 10 5 2 3 4 5 7 101 2 3 4 5 7 102 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 102 7 5 3 2 101 7 5 3 2 PGM = 3W PG(AV) = 0.3W IGM = 0.5A IFGT I, IRGT III IRGT I 100 7 5 3 2 VGD = 0.2V 10–1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 35 0 100 5 103 7 5 4 3 2 102 7 5 4 3 2 Typical Example IRGT III IFGT I, IRGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) REJ03G0290-0200 Page 3 of 6 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 40 101 7 5 3 2 10–1 Rated Surge On-State Current Rev.2.00 Nov 30, 2007 Transient Thermal Impedance (°C/W) On-State Current (A) Maximum On-State Characteristics 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR3AS-12A Allowable Case Temperature vs. RMS On-State Current Maximum On-State Power Dissipation 160 Case Temperature (°C) 140 8 360° Conduction Resistive, 6 inductive loads 4 2 0 0 1 2 3 4 5 Ambient Temperature (°C) 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS On-State Current (A) 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Latching Current vs. Junction Temperature Holding Current vs. Junction Temperature 103 7 5 4 3 2 Typical Example Latching Current (mA) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Curves apply regardless of conduction angle RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) On-State Power Dissipation (W) 10 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) REJ03G0290-0200 Page 4 of 6 Rev.2.00 Nov 30, 2007 103 7 5 3 2 102 7 5 3 2 Distribution T2+, G– Typical Example 101 7 5 3 + + 2 T2–, G– Typical Example T2 , G 100 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) BCR3AS-12A Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 7 5 4 3 2 160 Typical Example 140 Tj = 125°C 120 100 III Quadrant 80 60 I Quadrant 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rate of Rise of Off-State Voltage (V/µs) Commutation Characteristics Gate Trigger Current vs. Gate Current Pulse Width Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 4 Minimum 3 Characteristics Value 2 Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz III Quadrant I Quadrant 100 7 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) 6Ω 6Ω A 6V V A 6V 330Ω Test Procedure I V A 6V V 330Ω Test Procedure II 6Ω 330Ω Test Procedure III Rev.2.00 Nov 30, 2007 103 7 5 4 3 2 Typical Example IRGT III IRGT I IFGT I 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits REJ03G0290-0200 Page 5 of 6 Breakover Voltage vs. Rate of Rise of Off-State Voltage Junction Temperature (°C) Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Breakover Voltage vs. Junction Temperature BCR3AS-12A Package Dimensions Package Name DPAK(L)-(3) JEITA Package Code RENESAS Code PRSS0004ZD-D Previous Code DPAK(L)-(3)/DPAK(L)-(3)V MASS[Typ.] 0.36g Unit: mm 6.5 ± 0.5 2.3 ± 0.2 5.4 ± 0.5 1.2 ± 0.3 16.2 ± 0.5 (1.3) 1.15 ± 0.1 0.8 ± 0.1 0.6 ± 0.1 0.6 ± 0.1 4.7 ± 0.5 6.9 ± 0.5 5.5 ± 0.5 8.2 ± 0.6 0.55 ± 0.1 0.55 ± 0.1 0.55 ± 0.1 2.29 0.55 ± 0.1 2.29 Order Code Lead form Straight type Standard packing Vinyl sack Quantity 100 Standard order code Type name – A1 Note : Please confirm the specification about the shipping in detail. REJ03G0290-0200 Page 6 of 6 Rev.2.00 Nov 30, 2007 Standard order code example BCR3AS-12A-A1 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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