Diode Semiconductor Korea FR1010BC---FR1060BC VOLTAGE RANGE: 100 --- 600 V CURRENT: 10 A FAST RECOVERY RECTIFIERS FEATURES Low cost D2PAK Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol 4.5± 0.2 1.3± 0.2 Diffused junction 10.2± 0.2 1.4± 0.2 1 2 3 0.1± 0.1 1.3± 0.1 0.8± 0.1 5.0± 0.5 0.5± 0.2 8.9± 0.3 PIN and similar solvents The plastic material carries U/L recognition 94V-0 13.2± 0.5 4 0.4± 0.1 MECHANICAL DATA Case:JEDEC D 2 PAK,molded plastic 1 Terminals: solderable per MIL- STD-202,Method 208 2 3 Polarity: Color band denotes cathode Weight: 0.087 ounces,2.2 grams Mounting position: Any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. FR 1010BC FR 1020BC FR 1030BC FR 1040BC FR 1060BC UNITS Maximum recurrent peak reverse voltage V RRM 100 200 300 400 600 V Maximum RMS voltage V RMS 70 140 210 280 420 V Maximum DC blocking voltage V DC 100 200 300 400 600 V Maximum average forw ard rectified current @TA=75 IF(AV) 10 A IFSM 100 A VF 1.3 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 5.0 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 10 IR 150 250 Maximum reverse recovery time (Note1) trr Typical junction capacitance (Note2) CJ 28 Typical thermal resistance (Note3) RθJA 3.0 TJ - 55---- +150 TSTG - 55---- + 150 Operating junction temperature range Storage temperature range A 150 ns pF ／Ｗ NOTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea FR1010BC- --FR1060BC FIG.2--PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES AVERAGE FORWARD RECTIFIED CURRENT AMPERES FIG.1 -- FORWARD DERATING CURVE 16 14 12 10 8 6 4 Single Phase H alf W ave 60H Z R esistive or Inductive Load 2 0 0 25 50 75 10 0 12 5 15 0 17 5 100 50 25 0 INSTANTANEOUS FORWARD CURRENT AMPERES JUNCTION CAPACITANCE,pF 60 40 20 10 TJ=25 f=1MHz 2 .4 1.0 2 4 10 20 40 8 10 20 40 60 80 100 FIG.4 --TYPICAL FORWARD CHARACTERISTIC 100 .2 4 NUMBER OF CYCLES AT 60 Hz FIG.3--TYPICAL JUNCTION CAPACITANCE 1 .1 2 1 AMBIENT TEMPERATURE, 4 TJ=125 8.3ms Single Half Sine-Wave 75 100 REVERSE VOLTAGE,VOLTS 100 10 TJ=25 Pulse Width=300 µS 4 2 1.0 0.4 0.2 0.1 0.06 0.04 0.02 0.01 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE,VOLTS FIG.5 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM trr 10 N.1. 50 N.1. +0.5A D.U.T. ( - ) 0 PULSE GENERATOR (NOTE2) (+) 50VDC (APPROX) (-) 1 N.1. OSCILLOSCOPE (NOTE 1) -0.25A ( + ) -1.0A 1cm NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF SET TIMEBASEFOR50/100 ns /cm 2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O www.diode.kr