BCR8PM-14LE Triac Medium Power Use REJ03G1260-0200 Rev.2.00 Jul 28, 2006 Features • • • • • Insulated Type • Planar Passivation Type • UL Applying IT (RMS) : 8 A VDRM : 700 V IFGTI, IRGTI, IRGTIII : 30 mA Viso : 1500 V Outline RENESAS Package code: PRSS0003AA-B (Package name: TO-220F(2) ) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Washing machine, inversion operation of capacitor motor, and other general controlling devices Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.2.00 Jul 28, 2006 page 1 of 7 Symbol VDRM VDSM Voltage class 14 700 800 Unit V V BCR8PM-14LE Parameter RMS on-state current Symbol IT (RMS) Ratings 8 Unit A Surge on-state current ITSM 80 A I2 t 26 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 – 40 to +125 – 40 to +125 2.0 1500 W W V A °C °C g V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, Tc = 82°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.6 Unit mA V Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 12 A, Instantaneous measurement Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 1.5 1.5 1.5 V V V Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger currentNote2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 30 30 30 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω VGD Rth (j-c) 0.2 — — — — 4.3 V °C/W Gate non-trigger voltage Thermal resistance Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 10 — — V/µs Tj = 125°C Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 4.0 A/ms 3. Peak off-state voltage VD = 400 V Rev.2.00 Jul 28, 2006 page 2 of 7 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR8PM-14LE Performance Curves 102 7 5 3 2 Rated Surge On-State Current 100 Tj = 125°C 101 7 5 3 2 Tj = 25°C 100 7 5 3 2 Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 50 40 30 20 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Trigger Current vs. Junction Temperature PG(AV) = 0.5 W PGM = 5 W IGM = 2 A VGT = 1.5 V 100 7 5 3 2 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (I, II and III) 103 7 5 4 3 2 Typical Example IRGT III 102 7 IRGT I, IFGT I 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Jul 28, 2006 page 3 of 7 Transient Thermal Impedance (°C/W) Gate Voltage (V) 60 Conduction Time (Cycles at 60Hz) IFGT I IRGT I, IRGT III VGD = 0.2 V 10–1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 70 On-State Voltage (V) 3 2 VGM = 10 V Rev.2.00 80 0 100 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 101 7 5 3 2 90 102 2 3 5 7103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 –1 10 2 3 5 7100 2 3 5 7101 2 3 5 7102 Conduction Time (Cycles at 60 Hz) BCR8PM-14LE Maximum On-State Power Dissipation 16 103 7 5 3 2 No Fins 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 On-State Power Dissipation (W) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 4 2 0 2 4 6 8 10 12 14 16 Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 Ambient Temperature (°C) Curves apply regardless 140 of conduction angle 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 2 6 4 8 0 10 12 14 All fins are black painted 140 aluminum and greased 120 120 × 120 × t2.3 100 × 100 × t2.3 100 60 × 60 × t2.3 80 60 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 40 20 0 16 0 2 4 6 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) Jul 28, 2006 page 4 of 7 3.0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Case Temperature (°C) 6 RMS On-State Current (A) 160 Ambient Temperature (°C) 8 Conduction Time (Cycles at 60Hz) 160 Rev.2.00 12 360° Conduction Resistive, 10 inductive loads 0 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 0 14 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) BCR8PM-14LE 103 7 5 4 3 2 Latching Current (mA) Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 103 7 5 3 2 Distribution T2+, G– Typical Example 102 7 5 3 2 101 7 5 3 T +, G+ 2 2– – Typical Example T2 , G 100 –40 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Junction Temperature (°C) 160 Typical Example Tj = 125°C 140 120 100 80 60 III Quadrant 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Commutation Characteristics Gate Trigger Current vs. Gate Current Pulse Width 3 Typical Example 2 Tj = 125°C 102 IT = 4 A 7 τ = 500 µs 5 VD = 200 V 3 f = 3 Hz 2 101 7 5 Minimum 3 Characteristics 2 Value Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time I Quadrant III Quadrant 100 7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Rate of Decay of On-State Commutating Current (A/ms) Rev.2.00 Latching Current vs. Junction Temperature Jul 28, 2006 page 5 of 7 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature 103 7 5 4 3 2 Typical Example IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) BCR8PM-14LE Gate Trigger Characteristics Test Circuits 6Ω 6Ω A 6V 330 Ω V Test Procedure I A 330 Ω V Test Procedure III Rev.2.00 Jul 28, 2006 V Test Procedure II 6Ω 6V A 6V page 6 of 7 330 Ω BCR8PM-14LE Package Dimensions JEITA Package Code SC-67 Package Name TO-220F(2) RENESAS Code PRSS0003AA-B Previous Code MASS[Typ.] 2.0g Unit: mm 10.5Max 2.8 17 8.5 5.0 1.2 5.2 φ3.2 ± 0.2 13.5Min 3.6 1.3Max 0.8 2.54 0.5 2.6 4.5 2.54 Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 100 Type name Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00 Jul 28, 2006 page 7 of 7 Standard order code example BCR8PM-14LE BCR8PM-14LE-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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