HMC396 v00.1002 MICROWAVE CORPORATION InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8.0 GHz AMPLIFIERS - CHIP 1 Typical Applications Features An excellent cascadable 50 Ohm Gain Block or LO Driver for: Gain: 12 dB • Microwave & VSAT Radios Stable Gain Over Temperature • Test Equipment 50 Ohm I/O’s • Military EW, ECM, C3I Small Size: 0.38 mm x 0.58 mm x 0.1 mm P1dB Output Power: +14 dBm • Space Telecom Functional Diagram General Description The HMC396 die is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC DC to 8 GHz amplifier. This amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +16 dBm output power. The HMC396 offers 12 dB of gain and an output IP3 of +30 dBm while requiring only 56 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. The HMC396 can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (0.22mm2) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.5mm (20 mils). Electrical Specifications, Vs= +5.0V, Rbias= 22 Ohm, TA = +25° C Parameter Min. Typ. Max. Gain DC - 4.0 GHz 4.0 - 8.0 GHz 12 11 dB dB Gain Variation Over Temperature DC - 4.0 GHz 4.0 - 8.0 GHz 0.004 0.015 dB/ °C dB/ °C Input Return Loss DC - 4.0 GHz 4.0 - 8.0 GHz 15 12 dB dB Output Return Loss DC - 4.0 GHz 4.0 - 8.0 GHz 19 17 dB dB Reverse Isolation DC - 8.0 GHz 16 dB Output Power for 1 dB Compression (P1dB) DC - 4.0 GHz 4.0 - 8.0 GHz 14 13 dBm dBm Output Third Order Intercept (IP3) DC - 4.0 GHz 4.0 - 8.0 GHz 30 24 dBm dBm Noise Figure DC - 8.0 GHz 6 dB 56 mA Supply Current (Icq) Note: Data taken with broadband bias tee on device output. 1 - 42 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC396 v00.1002 MICROWAVE CORPORATION InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8.0 GHz 15 10 S21 S11 S22 0 -5 GAIN (dB) RESPONSE (dB) 5 -10 -15 -20 -25 0 1 2 3 4 5 6 7 8 9 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 +25C +85C -55C 0 10 1 2 3 FREQUENCY (GHz) 4 5 6 7 8 9 10 FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 +25C +85C -5 OUTPUT RETURN LOSS (dB) INPUT RETURN LOSS (dB) 17 - 25 GHz -55C -10 -15 -20 -25 1 AMPLIFIERS - CHIP MMIC PUMPED MIXER GainGaAs & Return LossSUB-HARMONICALLY Gain vs. Temperature +25C +85C -5 -55C -10 -15 -20 -25 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 FREQUENCY (GHz) 4 5 6 7 8 9 10 FREQUENCY (GHz) Reverse Isolation vs. Temperature Noise Figure vs. Temperature 0 10 8 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 9 +25C +85C -5 -55C -10 -15 -20 7 6 5 4 3 +25C +85C -55C 2 1 -25 0 0 1 2 3 4 5 6 FREQUENCY (GHz) 7 8 9 10 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 43 HMC396 v00.1002 MICROWAVE CORPORATION InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8.0 GHz 20 18 18 16 16 14 14 Psat (dBm) P1dB (dBm) 20 12 10 8 +25C +85C -55C 6 4 10 8 +25C +85C -55C 4 2 0 0 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 FREQUENCY (GHz) Power Compression @ 1 GHz Pout Gain PAE 0 2 4 6 8 10 30 28 24 22 20 +25C +85C -55C 12 10 0 1 2 3 4 5 6 FREQUENCY (GHz) 8 9 10 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 Pout Gain PAE (%) -6 -4 -2 0 2 4 6 8 7 8 9 10 80 40 35 60 30 25 40 20 15 20 10 5 Gain P1dB Psat OIP3 Icq 0 0 4.5 4.75 5 5.25 Vs(Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5.5 Icq (mA) IP3 (dBm) 26 GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 32 14 7 Gain, Power, OIP3 & Supply Current vs. Supply Voltage @ 1 GHz 34 16 6 INPUT POWER (dBm) Output IP3 vs. Temperature 18 5 Power Compression @ 8 GHz Pout (dBm), GAIN (dB), PAE (%) 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 4 FREQUENCY (GHz) INPUT POWER (dBm) 1 - 44 17 - 25 GHz 12 6 2 Pout (dBm), GAIN (dB), PAE (%) AMPLIFIERS - CHIP 1 GaAs MMIC SUB-HARMONICALLY Psat PUMPED MIXER P1dB vs. Temperature vs. Temperature v00.1002 MICROWAVE CORPORATION HMC396 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8.0 GHz Absolute Maximum Ratings +7.0 Vdc RF Input Power (RFin)(Vcc = +5.0 Vdc) +10 dBm Junction Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 5.21 mW/°C above 85 °C) 0.339 W Thermal Resistance (junction to die bottom) 192 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C 1 AMPLIFIERS - CHIP Collector Bias Voltage (Vcc) Outline Drawing NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. ALL TOLERANCES ARE ±0.001 (0.025) 3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND 4. BOND PADS ARE 0.004 (0.100) SQUARE 5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150) 6. BACKSIDE METALLIZATION: GOLD 7. BOND PAD METALLIZATION: GOLD For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 45 HMC396 v00.1002 MICROWAVE CORPORATION InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8.0 GHz AMPLIFIERS - CHIP 1 Pad Descriptions Pin Number Function Description Interface Schematic 1 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 2 RFOUT RF output and DC Bias for the output stage. Die Bottom GND Die bottom must be connected to RF/DC ground. Application Circuit Note: 1. Select Rbias to achieve Icq using equation below, Rbias > 22 Ohm. 2. External blocking capacitors are required on RFIN and RFOUT. Icq = Vs - 3.9 Rbias Recommended Component Values Frequency (MHz) Component 1 - 46 50 1000 4000 8000 L1 270 nH 56 nH 8.2 nH 2.2 nH C1, C2 0.01 µF 100 pF 100 pF 100 pF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.1002 HMC396 MICROWAVE CORPORATION InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8.0 GHz 1 AMPLIFIERS - CHIP Assembly Diagram Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 47