Kexin FCX1047A Npn silicon power switching transistor Datasheet

Transistors
SMD Type
NPN Silicon Power Switching Transistor
FCX1047A
Features
2W power dissipation.
20A peak pulse current.
Excellent HFE characteristics up to 20 Amps.
Extremely low saturation voltage E.g. 25mv Typ.
Extremely low equivalent on-resistance.
RCE(sat) 40mÙ at 4A.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
5
V
Continuous collector current
ICM
20
A
Peak pulse current
IC
4
A
Ptot
1
W
Tj,Tstg
-55 to +150
Power dissipation
Operating and storage temperature range
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Transistors
SMD Type
FCX1047A
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
V(BR)CBO IC=100ìA
35
V
Collector-emitter breakdown voltage *
V(BR)CEO IC=10mA
10
V
Emitter-base breakdown voltage
V(BR)EBO IE=100ìA
5
V
VCB=20V
0.3
10
nA
VCE=20V
0.3
10
nA
VEB=4V
0.3
10
nA
Collector-emitter saturation voltage *
IC=0.5A, IB=10mA
IC=1A, IB=10mA
VCE(sat) IC=3A, IB=15mA
IC=4A, IB=50mA
IC=5A, IB=25mA
25
50
140
160
220
40
70
200
240
350
mV
Base-emitter saturation voltage *
VBE(sat) IC=4A, IB=50mA
920
1000
mV
Base-emitter ON voltage *
VBE(on) IC=4A, VCE=2V
860
950
mV
Collector Cut-Off Current
ICBO
Collector Emitter Cut-Off Current
ICES
Emitter Cut-Off Current
IEBO
Static Forward Current Transfer Ratio *
hFE
IC=10mA, VCE=2V
IC=0.5A,VCE=2V
IC=1A,VCE=2V
IC=4A,VCE=2V
IC=5A,VCE=2V
IC=20A,VCE=2V
280
290
300
200
200
60
430
440
450
350
330
110
IC=50mA, VCE=10V f=50MHz
150
MHz
Cobo
VCB=10V, f=1MHz
85
pF
Turn-on time
t(on)
IC=4A, VCC=10V
130
ns
Turn-off time
t(off)
IB1=IB2=40mA
230
ns
Transitional frequency
fT
Output capacitance
* Pulse test: tp = 300 ìs; d
Marking
Marking
2
Testconditons
Collector-base breakdown voltage
047
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0.02.
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