Transistors SMD Type NPN Silicon Power Switching Transistor FCX1047A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance. RCE(sat) 40mÙ at 4A. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 5 V Continuous collector current ICM 20 A Peak pulse current IC 4 A Ptot 1 W Tj,Tstg -55 to +150 Power dissipation Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FCX1047A Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit V(BR)CBO IC=100ìA 35 V Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 10 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 5 V VCB=20V 0.3 10 nA VCE=20V 0.3 10 nA VEB=4V 0.3 10 nA Collector-emitter saturation voltage * IC=0.5A, IB=10mA IC=1A, IB=10mA VCE(sat) IC=3A, IB=15mA IC=4A, IB=50mA IC=5A, IB=25mA 25 50 140 160 220 40 70 200 240 350 mV Base-emitter saturation voltage * VBE(sat) IC=4A, IB=50mA 920 1000 mV Base-emitter ON voltage * VBE(on) IC=4A, VCE=2V 860 950 mV Collector Cut-Off Current ICBO Collector Emitter Cut-Off Current ICES Emitter Cut-Off Current IEBO Static Forward Current Transfer Ratio * hFE IC=10mA, VCE=2V IC=0.5A,VCE=2V IC=1A,VCE=2V IC=4A,VCE=2V IC=5A,VCE=2V IC=20A,VCE=2V 280 290 300 200 200 60 430 440 450 350 330 110 IC=50mA, VCE=10V f=50MHz 150 MHz Cobo VCB=10V, f=1MHz 85 pF Turn-on time t(on) IC=4A, VCC=10V 130 ns Turn-off time t(off) IB1=IB2=40mA 230 ns Transitional frequency fT Output capacitance * Pulse test: tp = 300 ìs; d Marking Marking 2 Testconditons Collector-base breakdown voltage 047 www.kexin.com.cn 0.02.