Kexin BT169-400A Scr thyristor Datasheet

Thyristor
SMD Type
SCR Thyristor
BT169 (KT169)
1.70
■ Features
0.1
● Repetitive peak off-state voltages :400V
● Average on-state current :0.5A
● RMS on-state current :0.8A
0.42 0.1
0.46 0.1
● Non-repetitive peak on-state current :8A
1:GATE
2:ANODE
3:CATHODE
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Peak Repetitive Forward and Reverse Blocking
BT169-400
Voltages
VDRM VRRM
400
V
IT(AV)
0.5
IT(RMS)
0.8
Average on-state Current
Forward Current RMS
Non-Repetitive Peak on-state Current (t=10ms)
Non-Repetitive Peak on-state Current (t=8.3ms)
Circuit Fusing Considerations (t = 10ms)
ITSM
8
A
9
2
It
0.32
A 2s
dIT/dt
50
A/us
IGM
1
A
Peak Gate Voltage
VGM
5
Peak Gate Voltage ─ Reverse
VGRM
5
Peak Gate Power ─ Forward
PGM
2
PGF(AV)
0.1
Thermal Resistance Junction to Ambient
RthJA
150
Thermal Resistance Junction to Case
RthJC
60
Repetitive Rate of rise of on-state Current after Triggering
Peak Gate Current
Average Gate Power ─ Forward
Junction Temperature
Storage Temperature Range
TJ
125
Tstg
-40 to 150
V
W
K/W
℃
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Thyristor
SMD Type
SCR Thyristor
BT169 (KT169)
■ Electrical Characteristics (Ta = 25℃, unless otherwise noted.)
Parameter
Symbol
Peak Repetitive Forward and Reverse
Blocking Voltages
Test Conditions
VDRM VRRM IDRM=IRRM50uA
Typ.
Max
400
ID,IR
VDRM=VRRM(max);Tj=125℃; RGK=1kΩ
0.1
On-state Voltage
VTM
IT=1A
1.5
Gate Trigger Voltage
VGT
Gate Trigger Current (Continuous dc)
IGT
VD=12V, IT=10mA
VD= VDRM(max), IT=10mA; Tj=125℃
0.8
V
200
uA
Latching Current
IL
VD=12V, IGT=0.5mA; RGK=1kΩ
6
Holding Current
IH
VD=12V, IGT=0.5mA; RGK=1kΩ
5
dVD/dt
VDM=67% VDRM(max); Tj=125 ℃
exponential waveform; RGK=1kΩ
25
Gate Controlled turn-on time
tgt
ITM=2A; VD=VDRM(max),G=10mA;
dIG/dt=0.1A/us
2
Circuit Commutated turn-off time
tq
VD=67% VDRM(max); Tj=125℃,
TM=1.6A; VR=35V;
dITM/dt=30A/us,dVD/dt=2V/us; RGK=1kΩ
Type
BT169-400
BT169-400A
BT169-400B
Range
0-200
10-30
30-60
Marking
BT/C39
BT/C35
BT/C36
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mA
0.2
VD=12V, IT=10mA
■ Classification of IGT (uA)
Unit
V
Off-state Leakage Current
Critical Rate of rise of off-state Voltage
2
Min
mA
V/us
us
100
Thyristor
SMD Type
SCR Thyristor
BT169 (KT169)
■ Typical Characterisitics
Tc(max) / 。
C
Ptot / W
0.8
conduction
angle
degrees
30
60
90
120
180
0.7
0.6
0.5
0.4
form
factor
a
4
2.8
2.2
1.9
1.57
a=1.57
77
83
1.9
95
101
4
107
0.2
113
0.1
119
0
0.1
0.2
0.3
0.4
IF(AV) / A
0.5
0.6
0.7
125
FIG.1 Maximum on-state dissipation, Ptot , versus average
on-state current, I T(AV) , where a=form factor=I T(RMS) / IT(AV)
1000
IT
ITSM / A
ITSM
8
89
2.2
2.8
0.3
0
ITSM / A
10
T
time
Tj initial=25• • C max
6
4
2
0
1
10
100
1000
Number of half cycles at 50Hz
FIG.4 Maximnum permissible non-repetitive peak on-state current
ITSM , versus number of cycles, for sinusoidal currents, f = 50Hz.
2.0
IT(RMS) / A
1.5
100
IT
10
1
1.0
ITSM
T
0.5
time
Tj initial=25 。C max
100µs
10µs
T/s
1ms
10ms
FIG.2 Maximum permissible non-repetitive peak on-state current
ITSM ,versus pulse width tp,for sinusoidal currents, t p <=10ms.
IT(RMS) / A
1.0
83。C
0.8
0.1
1.0
10
surge duration / s
FIG.5 Maximum permissible repetitive rms on-state current I T(RMS) ,
versus surge duration, for sinusoidal currents, f= 50Hz; Tlead<=83 。
C
VGT(Tj)
1.6
。
VGT(25 C)
1.4
1.2
0.6
1.0
0.4
0.8
0.2
0
-50
0
0.01
0.6
0
50
100
150
Tlead / C
FIG.3 Maximum permissible rms current I T(RMS) , versus
lead temperature, Tlead
0.4
-50
0
50
100
150
Tj / C
FIG.6 Normalised gate trigger voltage V GT (Tj) /V GT( 25。C),
versus junction temperature Tj
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Thyristor
SMD Type
SCR Thyristor
BT169 (KT169)
■ Typical Characterisitics
IGT(Tj)
3.0
VGT(25 。C)
2.5
typ
max
2
1.0
0.5
1
0
50
Tj / C
100
0
150
。
FIG.7 Normalised gate trigger current IGT(Tj)/IGT(25 C),
versus junction temperature Tj
3.0
。
。CC - - -
Vo=1.067V
Rs=0.187 Ω
3
1.5
-50
Tj=125
Tj= 25
4
2.0
0
IT / A
5
IL(Tj)
IL(25 。C)
0
1.5
2.0
FIG.10 Typical and maximum on-state characteristic.
Zth j-lead (K/W)
100
2.5
1.0
VT / V
0.5
10
2.0
1
1.5
1.0
0.5
0
-50
0
50
Tj / C
100
150
FIG.8 Normalised latching current I L(Tj) /IL(25。C),versus
junction temperature Tj, R GK= 1KΩ
3.0
PD
0.1
IH(Tj)
。
IH(25 C)
0.01
10us 0.1ms 1ms
tp
t
10ms
tp / s
0.1s
1s
10s
FIG.11 Transient thermal impedance Zth j-lead, versus pulse width tp.
1000
dVD/dt(V/us)
2.5
2.0
100
RGK=1KΩ
1.5
1.0
10
0.5
0
50
100
150
Tj / C
FIG.9 Normalised holding current I H (Tj)/IH(25 。C),versus
junction temperature Tj, R GK=1KΩ
4
-50
0
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1
0
0
Tj / C
50
150
FIG.12 Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
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