MIC94002 Micrel MIC94002 Dual P-Channel MOSFET Not Recommended for New Designs General Description Features The MIC94002 contains two silicon gate P-channel MOSFETs designed for low on-resistance, high-side switch applications. The MIC94002 has a maximum on-resistance of 0.4Ω at 4.5V gate-to-source voltage. On-resistance can also be reduced to half by connecting both MOSFETs in parallel. Improved ESD protection is provided by the gate protection network shown in the schematic diagram. The MIC94002 is supplied in a low-profile version of the 8-lead SOIC package. The MIC94002 can be assembled with the body not shorted to the sources for use in analog switch applications. Contact the factory for more information. • 15V minimum drain-to-source breakdown • 0.4Ω maximum on-resistance at 4.5V gate-to-source voltage (each MOSFET) • Functional at 2.7V gate-to-source voltage • 0.063" maximum height Applications • • • • High-side switch Power management Stepper motor control 1.8" PCMCIA disk drive VCC switch Ordering Information Part Number Temperature Range* Package –55°C to +150°C 8-lead SOIC† MIC94002BLM * Operating Junction Temperature † Low Profile Leads, see Package Information Schematic Information Pin Configuration Source Gate 1 Gate 2 1 S‡ D1 8 2 G1 D1 7 Schematic Symbols 3 S‡ D2 6 S‡ 4 G2 D2 5 Drain 1 Drain 2 S‡ G1 G2 D1 6 8-lead Low-Profile SOIC Package (LM) D2 Schematic Diagram Typical Application Package Information 0.026 (0.65) MAX) S‡ D1 G1 On Off S‡ D2 G2 On Off 74HC04 ‡ 0.050 (1.27) 0.016 (0.40) TYP TYP 0.193 (4.90) 45° 3°–6° 0.063 (1.60) MAX common source 0.057 (1.45) 0.049 (1.25) Dual Power Switch Application Patent 5,355,008 August 1998 Pin 1 0.154 (3.90) Load 2 1/2 MIC94002 Load 1 1/2 MIC94002 +5V 6-39 0.197 (5.0) 0.189 (4.8) SEATING PLANE 0.244 (6.20) 0.228 (5.80) MIC94002 Micrel Absolute Maximum Ratings Voltage and current values are negative. Signs not shown for clarity. Drain-to-Source Voltage ................................................ 15V Gate-to-Source Voltage ................................................ 15V Continuous Drain Current (each MOSFET, both on) TA = 25°C ................................................................. 1.2A TA = 100°C ............................................................... 0.7A Operating Juction Temperature ................. –55°C to +150° Storage Temperature ............................... –55°C to +150°C Total Power Dissipation TA = 25°C ................................................................... 1W TA = 100°C .............................................................. 0.4W Thermal Resistance θJA ...................................................................................... 125°C/W θJC ........................................................................................ 76°C/W Lead Temperature 1/16" from case, 10s ........................................... +300°C Electrical Characteristics Note 1 TA = 25°C unless noted. All values are negative. Signs not shown for clarity. Symbol Parameter Condition Min VBDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 15 VGS Gate Threshold Voltage VDS = VGS, ID = 250µA 1 IGSS Gate-Body Leakage IDSS Zero Gate Voltage Drain Current Typ Units V 3 V VDS = 0V, VGS = 15V, Note 3 100 nA VDS = 15V, VGS = 0V 25 µA VDS = 15V, VGS = 0V, TJ = 125°C 250 µA ID(ON) On-State Drain Current VDS ≥ 10V, VGS = 10V, Note 2 5.5 RDS(ON) Drain-Source On-State Resist. VGS = 4.5V, ID = 50mA 0.35 gFS Forward Transconductance VDS = 15V, ID = 1A, Note 2 0.7 Note 1 Max A 0.40 Ω S Values for each MOSFET Note 2 Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% Note 3 ESD gate protection diode conducts during positive gate-to-source voltage excursions. Typical Characteristics On Resistance vs. Drain Current 2000 0.40 1800 0.35 1600 VGS = 4.5V 1400 0.30 1200 ID (mA) RDS(ON) (Ω) Drain Characteristics 0.45 0.25 0.15 VGS = 3.0 800 400 0.05 200 0.4 0.8 1.2 1.6 ID (A) Notes 1, 2 VGS = 2.5 VGS = 2.0 600 0.10 0.00 0.0 VGS = 3.5 1000 VGS = 10V 0.20 VGS = 4.0 0 0.0 2.0 6-40 VGS = 1.5 2.5 5.0 7.5 10.0 12.5 15.0 VDS (V) Notes 1, 2 August 1998