6N65 650V N-Channel Power MOSFET ● RDS(ON)<1.7Ω @ VGS=10V ● ● ● Fast switching capability Lead free in compliance with EU RoHS directive. Green molding compound PRODUCT SUMMARY VDS (V) Current (A) 6 650 RDS(on)(Ω) 1.7 @ VGS =10V Pin Definition: ● 1. Gate 2. Drain 3. Source Case: TO-220,ITO-220,TO-262,TO-263 Package Ordering Information Package Part No. Packing DMT6N65-TU TO-220 50pcs / Tube DMF6N65-TU ITO-220 50pcs / Tube DMK6N65-TU TO-262 50pcs / Tube DMG6N65-TU TO-263 50pcs / Tube DMG6N65-TR TO-263 800pcs / 13" Reel Block Diagram D G S ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS RATINGS 650 ±30 UNIT V V Continuous Drain Current ID 6.0 A Pulsed Drain Current (Note 2) IDM 24.8 A Avalanche Energy EAS 440 mJ 125 W PD 45 W TJ TOPR TSTG +150 -55 ~ +150 -55 ~ +150 °C °C °C Single Pulsed (Note 3) TO-220/TO-262/TO-263 Power Dissipation Junction Temperature Operating Temperature Storage Temperature ITO-220 Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 24mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C May,2015-REV.00 www.dyelec.com 1/8 6N65 650V N-Channel Power MOSFET THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220/ITO-220 TO-262/TO-263 RATING 62.5 θJA TO-220 TO-262/TO-263 UNIT °C/W 3.1 θJC ITO-220 3.5 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse e TEST CONDITIONS MIN TYP MAX UNIT BVDSS VGS = 0V, ID = 250μA IDSS VDS = 650V, VGS = 0V 10 μA VGS = 30V, VDS = 0V 100 -100 nA nA 4.0 1.7 V Ω IGSS V 650 VGS = -30V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS= 10 V, ID = 3.1A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD = 325V, I D =6.2A, Turn-On Rise Time tR RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS= 520V,ID= 6.2A, Gate-Source Charge QGS VGS= 10V (Note 1, 2) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS= 0V, IS = 6A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0 V, IS = 6.2A, dIF/dt = 100 A/ μs (Note 1) Reverse Recovery Charge QRR 2.0 1.1 950 95 20 pF pF pF 45 100 300 220 180 8 20 ns ns ns ns nC nC nC 260 2.5 1.4 V 6.0 A 24.8 A ns μC Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2.. Essenti ly independent of operating temperature May.2015-REV.00 www.dyelec.com 2/8 6N65 650V N-Channel Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS Same Type as D.U.T. VDD * dv/dt controlled by RG * SD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms May,2015-REV.00 www.dyelec.com 3/8 6N65 650V N-Channel Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit May,2015-REV.00 Time Unclamped Inductive Switching Waveforms www.dyelec.com 4/8 6N65 650V N-Channel Power MOSFET May,2015-REV.00 Drain Current, ID (A) Drain Current,ID (µA) Drain Current,ID (µA) Drain Current,ID (A) TYPICAL CHARACTERISTICS www.dyelec.com 5/8 6N65 650V N-Channel Power MOSFET TO-220 Mechanical Drawing ITO-220 Mechanical Drawing May,2015-REV.00 www.dyelec.com 6/8 6N65 650V N-Channel Power MOSFET TO-262 Mechanical Drawing TO-263 Mechanical Drawing May,2015-REV.00 www.dyelec.com 7/8 6N65 650V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify DIYI for any damages resulting from such improper use or sale. May,2015-REV.00 www.dyelec.com 8/8