UNISONIC TECHNOLOGIES CO., LTD MMDT2222A Preliminary DUAL TRANSISTOR DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR DESCRIPTION The UTC MMDT2222A is a Dual NPN small signal surface mount transistor. It’s suitable for low power amplification and switch. FEATURES * Suitable for Low Power Amplification and Switching * Epitaxial Planar Die Construction * Extremely-Small Surface Mount Package EQUIVALENT CIRCUIT 6 5 4 Tr1 Tr2 1 2 3 ORDERING INFORMATION Ordering Number Lead Free Halogen Free MMDT2222AL-AL6-R MMDT2222AG-AL6-R Package Packing SOT-363 Tape Reel MARKING INFORMATION www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 3 QW-R218-016.a MMDT2222A Preliminary DUAL TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current-Continuous IC 600 mA Power Dissipation (Note 2) PD 200 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Maximum combined dissipation. THERMAL DATA (TA=25°C, unless otherwise specified.) PARAMETER Junction to Ambient SYMBOL θJA RATINGS 625 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS (Note) Collector-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0 VCB=60V, IE=0 Collector-Current ICBO VCB=60V, IE=0, TA=150°C Collector- Current ICEX VCE=60V, VEB(OFF)=3.0V Emitter- Current IEBO VEB=3.0V, IC=0 Base- Current IBL VCE=60V, VEB(OFF)=3.0V ON CHARACTERISTICS (Note) IC=100µA, VCE=10V IC=1.0mA, VCE=10V IC=10mA, VCE=10V IC=150mA, VCE=10V DC Current Gain hFE IC=500mA, VCE=10V IC=10mA, VCE=10V, TA=-55°C IC=150mA, VCE=1.0V IC=150mA, IB=15mA Collector-Emitter Saturation Voltage VCE(SAT) IC=500mA, IB=50mA IC=150mA, IB=15mA Base-Emitter Saturation Voltage VBE(SAT) IC=500mA, IB=50mA SMALL SIGNAL CHARACTERISTICS Output Capacitance COBO VCB=10V, f=1.0MHz, IE=0 Input Capacitance CIBO VEB=0.5V, f=1.0MHz, IC=0 Current Gain-Bandwidth Product fT VCE=20V, IC=20mA, f=100MHz Noise Figure NF VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz SWITCHING CHARACTERISTICS VCC=30V,IC=150mA,VBE(OFF)=-0.5V, Delay Time tD IB1=15mA Rise Time tR Storage Time tS VCC=30V, IC=150mA, IB1=IB2=15mA Fall Time tF Note: Short duration pulse test used to minimize self-heating effect. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 75 40 6.0 10 10 10 10 20 35 50 75 100 40 50 35 0.6 V V V nA μA nA nA nA 300 0.3 1.0 1.2 2.0 V V V V 8 25 4.0 pF pF MHz dB 10 25 225 60 ns ns ns ns 300 2 of 3 QW-R218-016.a MMDT2222A Preliminary DUAL TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R218-016.a