IRF AUIRGR4045DTR Insulated gate bipolar transistor with ultrafast soft recovery diode Datasheet

PD - 97637
AUIRGR4045D
AUIRGU4045D
AUTOMOTIVE GRADE
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
VCES = 600V
Features
•
•
•
•
•
•
•
•
•
•
•
Low VCE (on) Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5µs SCSOA
Square RBSOA
100% of the parts tested for ILM
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
Automotive Qualified*
IC = 6.0A, TC = 100°C
G
VCE(on) typ. = 1.7V
E
n-channel
C
E
G
Benefits
D-Pak
AUIRGR4045D
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
G
Gate
G
E
C
I-Pak
AUIRGU4045D
C
Colletor
E
Emitter
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
VCES
IC@ TC = 25°C
IC@ TC = 100°C
ICM
ILM
IF@TC=25°C
IF@TC=100°C
IFM
VGE
PD @ TC =25°
PD @ TC =100°
TJ
TSTG
Units
Max.
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
600
12
6.0
18
24
8.0
4.0
24
± 20
± 30
77
39
c
d
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
V
A
V
W
°C
-55 to + 175
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
RθJC
RθJC
RθJA
RθJA
e
e
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
g
Min.
Typ.
Max.
Units
–––
–––
–––
–––
–––
–––
–––
–––
1.9
6.8
50
110
°C/W
*Qualification standards can be found at http://www.irf.com/
1
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02/14/11
AUIRGR/U4045D
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
∆V(BR)CES/∆TJ
Temperature Coeff. of Breakdown Voltage
—
0.36
—
—
1.7
2.0
VCE(on)
Collector-to-Emitter Saturation Voltage
—
2.07
—
—
2.14
—
V
Conditions
VGE = 0V, Ic =100 µA
Ref.Fig
f
o
V/°C VGE = 0V, Ic = 250µA ( 25 -175 C )
IC = 6.0A, VGE = 15V, TJ = 25°C
V
IC = 6.0A, VGE = 15V, TJ = 150°C
5,6,7,9,
IC = 6.0A, VGE = 15V, TJ = 175°C
10 ,11
VGE(th)
Gate Threshold Voltage
3.5
—
6.5
∆VGE(th)/∆TJ
Threshold Voltage temp. coefficient
—
-13
—
gfe
Forward Transconductance
—
5.8
—
S
VCE = 25V, IC = 6.0A, PW =80µs
—
—
25
µA
VGE = 0V,VCE = 600V
ICES
VFM
IGES
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
—
—
250
—
1.60
2.30
—
1.30
—
—
—
±100
CT6
f
V
VCE = VGE, IC = 150µA
9,10,11,12
o
mV/°C VCE = VGE, IC = 250µA ( 25 -175 C )
VGE = 0V, VCE = 600V, TJ =175°C
V
8
IF = 6.0A
IF = 6.0A, TJ = 175°C
nA
VGE = ± 20 V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Total Gate Charge (turn-on)
Min. Typ. Max. Units
—
13
Conditions
19.5
IC = 6.0A
VCC = 400V
Qge
Gate-to-Emitter Charge (turn-on)
—
3.1
4.65
Qgc
Gate-to-Collector Charge (turn-on)
—
6.4
9.6
VGE = 15V
Eon
Turn-On Switching Loss
—
56
86
IC = 6.0A, VCC = 400V, VGE = 15V
Eoff
Turn-Off Switching Loss
—
122
143
Etotal
Total Switching Loss
—
178
229
td(on)
Turn-On delay time
—
27
35
tr
Rise time
—
11
15
td(off)
Turn-Off delay time
—
75
93
tf
Fall time
—
17
22
Eon
Turn-On Switching Loss
—
140
—
Eoff
Turn-Off Switching Loss
—
189
—
Etotal
Total Switching Loss
—
329
—
td(on)
Turn-On delay time
—
26
—
tr
Rise time
—
12
—
td(off)
Turn-Off delay time
—
95
—
tf
Fall time
—
32
—
Cies
Input Capacitance
—
350
—
Coes
Output Capacitance
—
29
—
Cres
Reverse Transfer Capacitance
—
10
—
nC
µJ
Reverse Bias Safe Operating Area
24
CT1
RG = 47Ω, L=1mH, LS= 150nH, TJ = 25°C
CT4
Energy losses include tail and diode reverse recovery
IC = 6.0A, VCC = 400V
ns
RG = 47Ω, L=1mH, LS= 150nH
CT4
TJ = 25°C
IC = 6.0A, VCC = 400V, VGE = 15V
µJ
13,15
RG = 47Ω, L=1mH, LS= 150nH, TJ = 175°C
CT4
Energy losses include tail and diode reverse recovery
IC = 6.0A, VCC = 400V
ns
RG = 47Ω, L=1mH, LS= 150nH
TJ = 175°C
VGE = 0V
pF
WF1,WF2
14,16
CT4
WF1,WF2
23
VCC = 30V
f = 1Mhz
TJ = 175°C, IC = 24A
RBSOA
Ref.Fig
VCC = 500V, Vp =600V
FULL SQUARE
4
CT2
RG = 100Ω, VGE = +20V to 0V
VCC = 400V, Vp =600V
22
SCSOA
Short Circuit Safe Operating Area
—
5
—
µs
Erec
Reverse recovery energy of the diode
—
178
—
µJ
TJ = 175 C
trr
Diode Reverse recovery time
—
74
—
ns
VCC = 400V, IF = 6.0A
20,21
Irr
Peak Reverse Recovery Current
—
12
—
A
VGE = 15V, Rg = 47Ω, L=1mH, LS=150nH
WF3
RG = 100Ω, VGE = +15V to 0V
o
CT3, WF4
17,18,19
Notes:

‚
ƒ
„
VCC = 80% (VCES ), VGE = 15V, L = 1.0mH, RG = 47Ω.
Pulse width limited by max. junction temperature.
Rθ is measured at T J approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended
footprint and soldering techniques refer to application note #AN-994.
2
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AUIRGR/U4045D
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
D-Pak
MSL1
I-PAK
Machine Model
ESD
††
Class M2 (+/- 200V)
AEC-Q101-002
†††
Human Body Model
Class H1A (+/- 500V)
AEC-Q101-001
Charged Device Model
Class C5 (+/- 1000V)
AEC-Q101-005
RoHS Compliant
†††
†††
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage.
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3
AUIRGR/U4045D
14
80
12
70
60
50
8
Ptot (W)
IC (A)
10
6
40
30
4
20
2
10
0
0
0
20
40
60
80 100 120 140 160 180
0
20
40
60
80 100 120 140 160 180
T C (°C)
T C (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
100
100
10µsec
10
10
IC A)
IC (A)
100µsec
DC
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
0
0.1
1
10
100
10
1000
100
VCE (V)
VCE (V)
Fig. 4 - Reverse Bias SOA
TJ = 175°C, VGE = 20V
Fig. 3 - Forward SOA,
TC = 25°C, TJ ≤ 175°C, VGE = 15V
20
20
Top
V
= 18V
GE
V
= 15V
GE
VGE = 12V
15
V
= 10V
GE
Bottom VGE = 8.0V
10
ICE (A)
ICE (A)
15
5
Top
Bottom
10
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
5
0
0
0
4
1000
2
4
6
8
10
0
2
4
6
8
10
VCE (V)
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
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AUIRGR/U4045D
20
Top
Bottom
18
16
-40°C
25°C
175°C
14
12
IF (A)
ICE (A)
15
20
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
10
10
8
6
5
4
2
0
0
0
2
4
6
8
10
0.0
1.0
2.0
VF (V)
VCE (V)
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
10
10
8
8
ICE = 3.0A
VCE (V)
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80µs
6
ICE = 6.0A
ICE = 12A
4
2
6
ICE = 3.0A
ICE = 6.0A
ICE = 12A
4
2
0
0
5
10
15
20
5
10
VGE (V)
20
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
IC, Collector-to-Emitter Current (A)
10
8
VCE (V)
15
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
ICE = 3.0A
ICE = 6.0A
6
ICE = 12A
4
2
18
T J = 25°C
T J = 175°C
16
14
12
10
8
6
4
2
0
0
5
10
15
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
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3.0
20
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5
AUIRGR/U4045D
400
1000
350
Swiching Time (ns)
Energy (µJ)
300
250
200
EOFF
150
tdOFF
100
tF
tdON
10
tR
EON
100
50
1
0
2
4
6
8
10
12
14
2
4
8
10
12
14
IC (A)
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L=1mH; VCE= 400V
RG= 47Ω; VGE= 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 1mH; VCE = 400V, RG = 47Ω; VGE = 15V.
220
1000
200
EOFF
Swiching Time (ns)
180
Energy (µJ)
6
160
EON
140
120
tdOFF
100
tF
tdON
10
tR
100
80
60
1
0
25
50
75
100
125
0
25
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 1mH; VCE = 400V, ICE = 6.0A; VGE = 15V
100
125
Fig. 16- Typ. Switching Time vs. RG
TJ = 175°C; L=1mH; VCE= 400V
ICE= 6.0A; VGE= 15V
22
30
20
25
RG = 10Ω
18
20
16
15
IRR (A)
IRR (A)
75
RG (Ω)
Rg (Ω)
RG = 22Ω
10
RG = 47Ω
5
RG = 100Ω
14
12
10
8
6
0
2
4
6
8
10
12
IF (A)
Fig. 17 - Typical Diode IRR vs. IF
TJ = 175°C
6
50
14
0
25
50
75
100
125
RG (Ω)
Fig. 18 - Typical Diode IRR vs. RG
TJ = 175°C; IF = 6.0A
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AUIRGR/U4045D
1200
20
18
1000
12A
10Ω
QRR (nC)
IRR (A)
16
14
12
22Ω
800
47Ω
6.0A
600
10
100Ω
400
3.0A
8
200
6
0
200
400
600
800
1000
0
1200
500
1500
diF /dt (A/µs)
diF /dt (A/µs)
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; TJ = 175°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 6.0A; TJ = 175°C
50
20
350
300
40
Time (µs)
RG = 47Ω
10
30
5
20
Current (A)
Isc
RG = 22Ω
200
Tsc
15
RG = 10Ω
250
Energy (µJ)
1000
150
RG = 100Ω
100
10
0
50
2
4
6
8
10
12
8
14
10
12
IF (A)
16
18
VGE (V)
Fig. 22- Typ. VGE vs. Short Circuit Time
VCC=400V, TC =25°C
Fig. 21 - Typical Diode ERR vs. IF
TJ = 175°C
1000
16
VGE, Gate-to-Emitter Voltage (V)
Cies
Capacitance (pF)
14
100
Coes
10
Cres
1
V CES = 400V
14
V CES = 300V
12
10
8
6
4
2
0
0
100
200
300
400
VCE (V)
Fig. 23- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
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500
0
2
4
6
8
10
12
14
Q G, Total Gate Charge (nC)
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 6.0A, L=600µH
7
AUIRGR/U4045D
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
τJ
0.02
0.01
R1
R1
τJ
τ1
R3
R3
τC
τ
τ2
τ1
τ2
τ3
τ3
τ4
τi (sec)
Ri (°C/W)
R4
R4
τ4
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.01
R2
R2
0.0301
0.000004
0.7200
0.000067
0.7005
0.000898
0.4479
0.005416
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
Thermal Response ( Z thJC )
D = 0.50
0.20
1
0.10
0.05
τJ
0.02
0.1
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
τC
τ
τ2
τ1
τ2
τ3
τ3
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
τ4
τ4
τi (sec)
Ri (°C/W)
R4
R4
0.2056
0.000019
1.4132
0.000095
3.3583
0.001204
1.8245
0.009127
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
8
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AUIRGR/U4045D
L
L
DUT
0
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.5 - Resistive Load Circuit
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VCC
80 V
+
-
DUT
Rg
480V
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.6 - Typical Filter Circuit for
V(BR)CES Measurement
9
AUIRGR/U4045D
600
12
600
500
10
500
400
8
400
6
300
90% ICE
200
4
5% ICE
100
VCE (V)
VCE (V)
tf
300
30
25
tr
TEST
CURRENT
90% test
current
2
100
0
0
-2
-100
10
10% test
current
0
0.2
0.4
0.6
0.8
0
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
100
t RR
-400
-10
-500
-15
-20
0.05
0.15
0.25
time (µS)
WF.3- Typ. Diode Recovery Waveform
@ TJ = 175°C using CT.4
10
-5
Vce (V)
VF (V)
10%
Peak
IRR
Peak
IRR
-600
-0.05
450
5
0
80
500
10
QRR
-200
-300
4.7
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
15
-100
4.5
-5
time (µs)
time(µs)
0
Eon Loss
4.3
1
5
5% VCE
Eoff Loss
-100
-0.2
15
200
5% VCE
0
20
VCE
70
400
60
350
50
300
40
250
200
30
ICE
20
150
10
100
0
50
-10
0
-20
-2 -1 0 1 2 3 4 5 6 7 8
Time (uS)
WF.4- Typ. Short Circuit Waveform
@ TJ = 25°C using CT.3
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AUIRGR/U4045D
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
Part Number
AUGR4045D
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRGR/U4045D
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak Part Marking Information
Part Number
AUGU4045D
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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AUIRGR/U4045D
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
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13
AUIRGR/U4045D
Ordering Information
Base part number
14
Package Type
AUIRGR4045D
Dpak
AUIRGU4045D
Ipak
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
Complete Part Number
Quantity
75
2000
3000
3000
75
AUIRGR4045D
AUIRGR4045DTR
AUIRGR4045DTRL
AUIRGR4045DTRR
AUIRGU4045D
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AUIRGR/U4045D
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warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where
mandated by government requirements, testing of all parameters of each product is not necessarily performed.
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Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied
by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive
business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional
restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or
service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business
practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in
other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation
where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application,
Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against
all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or
manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are
specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military
specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at
the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are
designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge
and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such
requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
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