CHENMKO ENTERPRISE CO.,LTD BAV99PT SURFACE MOUNT SWITCHING DIODE VOLTAGE 85 Volts CURRENT 0.15 Ampere APPLICATION * Ultra high speed switching SOT-23 * Silicon epitaxial planar MARKING .066 (1.70) CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) * A7 CIRCUIT .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .045 (1.15) .033 (0.85) (1) (2) (2) .007 (0.177) .055 (1.40) .047 (1.20) (3) Dimensions in inches and (millimeters) (3) .002 (0.05) * Maximum total power disspation is 300mW. * Peak forward current is 450mA. .019 (0.50) .041 (1.05) .033 (0.85) * Small surface mounting type. (SOT-23) * High speed. (TRR=1.5nSec Typ.) * Suitable for high packing density. .018 (0.30) FEATURE SOT-23 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL BAV99PT UNITS Maximum Recurrent Peak Reverse Voltage RATINGS VRRM 85 Volts Maximum RMS Voltage VRMS 60 Volts Maximum DC Blocking Voltage VDC 75 Volts IO 0.15 Amps Maximum Average Forward Rectified Current Peak Forward Surge Current at 1uSec. IFSM 4.0 Amps Typical Junction Capacitance between Terminal (Note 1) CJ 1.5 pF Maximum Reverse Recovery Time (Note 2) TRR 4.0 nSec TJ +150 o C -55 to +150 o C Maximum Operating Temperature Range Storage Temperature Range TSTG ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL BAV99PT UNITS Maximum Instantaneous Forward Voltage at IF= 150mA VF 1.25 Volts Maximum Average Reverse Current at VR= 75V IR 1.0 uAmps CHARACTERISTICS NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volts. 2. Measured at applied froward current of 10mA and reverse voltage of 10.0 volts. 3. ESD sensitive product handling required. 2002-5 FIG. 1 - TYPICAL FORWARD CURRENT DERAING CURVE 125 FIG. 2 - FORWARD CHARACTERISTICS 50 FORWARD CURRENT, (mA) AVERAGE FORWARD CURRENT, (%) RATING CHARACTERISTIC CURVES ( BAV99PT ) 100 75 50 25 0 20 10 5 Ta=85oC 50oC 25oC 0oC o - 30 C 2 1 0.5 0.2 0.1 25 0 50 75 100 125 150 0 0.2 o 0.4 0.6 0.8 1.0 1.4 1.2 AMBIENT TEMPERATURE, ( C) FORWARD VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE FIG. 4 - REVERSE CHARACTERISTICS 1.6 REVERSE CURRENT, (nA) JUNCTION CAPACITANCE, (pF) Ta=100oC f=1MHz 4 2 75oC 100 50oC 10 25oC 1 0oC - 0.01 0 0 2 4 6 8 10 12 14 16 18 20 20 0 REVERSE VOLTAGE, (V) 30 40 50 60 70 REVERSE VOLTAGE, (V) FIG. 5 - REVERSE RECOVERY TIME FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT 10 REVERSE RECOVERY TIME, (nS) 25oC 0.1 0.01µF 9 D.U.T. VR=6V 8 5 7 PULSE GENERATOR OUTPUT 50 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 FORWARD CURRENT, (mA) 8 9 10 50 SAMPLING OSCILLOSCOPE 80