Transistors SMD Type PNP Transistors BC859W,BC860W (KC859W,KC860W) ■ Features ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● Complements to BC849W and BC850W. C B 1.Base 2.Emitter 3.Collector E ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Symbol BC859W BC860W BC859W BC860W Emitter - Base Voltage VCBO VCEO Rating Unit -30 -50 -30 V -45 VEBO -5 Collector Current - Continuous IC -100 Collector Current - Pulse ICP -200 Base Current - Pulse IBP -200 Collector Power Dissipation PC 200 mW RθJA 625 ℃/W TJ 150 Tstg -65 to 150 Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature range mA ℃ www.kexin.com.cn 1 Transistors SMD Type PNP Transistors BC859W,BC860W (KC859W,KC860W) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol BC859W Collector- base breakdown voltage BC860W BC859W Collector- emitter breakdown voltage BC860W Emitter - base breakdown voltage VCBO Ic= -100 μA， IE=0 VCEO Ic= -1 mA， IB=0 VEBO BC859W BC859W Collector-base cut-off current BC860W ICBO IEBO Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) Base - emitter voltage Min VBE BCW859BW,860BW hFE Noise Figure BCW859BW,860BW NF BCW859CW,860CW -45 -5 IE= -100μA， IC=0 -100 nA uA VCB= -30 V , IE=0,TJ = 25℃ -4 VCB= -50 V , IE=0 -15 nA VCB= -50 V , IE=0,TJ = 25℃ -4 uA nA VEB= -5V , IC=0 -100 IC=-10 mA, IB=-0.5mA -0.3 IC=-100 mA, IB=-5mA -0.65 IC=-100 mA, IB=-5mA -1.2 VCE= -5V, IC= -2mA 0.6 V 0.75 VCE= -5V, IC= -10mA 0.82 VCE= -5V, IC= -2mA 220 800 220 475 420 800 IC = -200 u A; VCE = -5 V; RS = 2 kΩ;f = 10 Hz to 15.7 kHz 4 IC=-200 u A; VCE = -5 V; RS = 2 kΩ,f = 1 kHz; B = 200 Hz 4 Collector output capacitance Cob VCB= -10 V, IE=ie=0,f=1MHz Emitter output capacitance Ce VEB= -0.5V, IC=ic=0,f=1MHz Transition frequency fT VCE= -5V, IC= -10mA,f=100MHz Type BC859W BC859BW BC859CW BC860W BC860BW BC860CW Range 220-800 220-475 420-800 220-800 220-475 420-800 Marking 4D* 4B* 4C* 4H* 4F* 4G* www.kexin.com.cn V -30 ■ CLASSIFICATION OF hFE 2 Unit -50 BCW859CW,860CW BCW859W,860W Max -30 BCW859W,860W DC current gain Typ VCB= -30 V , IE=0 BC860W Emitter cut-off current Test Conditions dB 5 10 100 pF MHz Transistors SMD Type PNP Transistors BC859W,BC860W (KC859W,KC860W) ■ Typical Characterisitics 400 hFE VCE = −5 V 300 200 100 0 −10−2 −10−1 −1 −10 −102 IC (mA) −103 BC859BW; BC860BW. Fig.1 DC current gain; typical values. 600 hFE 500 VCE = −5 V 400 300 200 100 0 −10−2 −10−1 −1 −10 −102 IC (mA) −103 BC859CW; BC860CW. Fig.2 DC current gain; typical values. www.kexin.com.cn 3