TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/433 Devices Qualified Level 2N4399 JANTX JANTXV 2N5745 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA =+ 250C (1) @ TC = +1000C (2) Operating & Storage Junction Temperature Range Symbol 2N4399 2N5745 Unit VCEO VCBO VEBO IB IC PT 60 60 80 80 Vdc Vdc Vdc Adc Adc W W 0 C TJ, Tstg 5.0 7.5 30 20 5.0 115 -55 to +200 TO-3* (TO-204AA) THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit 3 Thermal Resistance, 1) 2) Junction-to-Case RθJC 0.875 Junction-to-Ambient RθJA 35 0 C/W Derate linearly @ 28.57 mW/0C for TA > +250C Derate linearly @ 1.15 W/0C for TC > +1000C *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N4399 2N5745 V(BR)CEO 60 80 2N4399 2N5745 ICEO 100 100 µAdc 2N4399 2N5745 ICEX 5.0 5.0 µAdc IEBO 5.0 µAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 60 Vdc VCE = 80 Vdc Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 1.5 Vdc VCE = 80 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc 120101 Page 1 of 2 2N4399, 2N5745 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. hFE 40 15 15 5.0 5.0 425 60 60 Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 1.0 Adc, VCE = 2.0 Vdc IC = 15 Adc, VCE = 2.0 Vdc IC = 10 Adc, VCE = 2.0 Vdc IC = 30 Adc, VCE = 5.0 Vdc IC = 20 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 5.0 Adc, IB = 0.5 Adc IC = 10 Adc, IB = 1.0 Adc Base-Emitter Saturation Voltage IC = 10 Adc, IB = 1.0 Adc IC = 15 Adc, IB = 1.5 Adc 2N4399 2N5745 2N4399 2N5745 2N4399 2N5745 2N4399 2N5745 VCE(sat) 0.55 0.75 1.0 Vdc VBE(sat) 1.7 1.8 2.0 Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz hfe 4.0 40 hfe 40 425 Cobo 1000 pF SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = 6.67 Vdc, IC = 30 Adc 2N4399 VCE = 10 Vdc, IC = 20 Adc 2N5745 Test 2 VCE = 20 Vdc, IC = 10 Adc All Types Test 3 VCE = 40 Vdc, IC = 3.0 Adc All Types Test 4 VCE = 50 Vdc, IC = 600 mAdc 2N4399 VCE = 60 Vdc, IC = 600 mAdc 2N5745 (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2