Advance Technical Information PolarHVTM Power MOSFET IXTA4N80P IXTP4N80P VDSS = 800 = 3.6 ID25 RDS(on) ≤ 3.4 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSS VGSM Continuous Transient ID25 IDM Maximum Ratings 800 V 800 V ± 30 ± 40 V V TC = 25°C TC = 25°C, pulse width limited by TJM 3.6 8 A A IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C 2 20 250 A mJ mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω 10 V/ns PD TC = 25°C 100 W -55 ... +150 150 -55 ... +150 °C °C °C TJ TJM Tstg TL TSOLD Md Weight 300 °C 260 °C 1.13/10 Nm/lb.in. 4 g 3 g 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-220) TO-220 TO-263 TO-263 (IXTA) G (TAB) TO-220 (IXTP) G BVDSS VGS = 0 V, ID = 250 μA 800 VGS(th) VDS = VGS, ID = 100μA 3.0 IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2006 IXYS CORPORATION All rights reserved (TAB) D = Drain TAB = Drain Features z Characteristic Values Min. Typ. Max. D S G = Gate S = Source z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) S z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect V 5.5 V ±100 nA 5 150 μA μA 3.4 Ω Advantages z z z Easy to mount Space savings High power density DS99596E(08/06) IXTA4N80P IXTP4N80P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 2.5 4.0 S 750 pF 70 pF Crss 6.3 pF td(on) 22 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 24 ns td(off) RG = 18 Ω (External) 60 ns 29 ns 14.2 nC 4.8 nC 4.8 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 1.25 °C/W RthJC RthCS TO-263 (IXTA) Outline (TO-220) Source-Drain Diode °C/W 0.25 Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive VSD IF = IS, VGS = 0 V trr IF = 3.5 A, -di/dt = 100 A/μs, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 3.5 A 8 A 1.5 V 560 TO-220 (IXTP) Outline ns Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IXTA4N80P IXTP4N80P Fig. 2. Output Characteristics @ 125ºC Fig. 1. Extended Output Characteristics @ 25ºC 6 3.5 V GS = 10V 8V 5 V GS = 10V 7V 3 7V I D - Amperes I D - Amperes 2.5 4 3 6V 2 1.5 2 1 6V 1 0.5 0 5V 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 V DS - Volts V DS - Volts Fig. 4. R DS(on) Normalized to ID = 2A Value v s. Drain Current Fig. 3. R DS(on) Normalized to ID = 2A Value vs. Junction Temperature 2.6 3 2.8 V GS = 10V V GS = 10V 2.4 TJ = 125ºC 2.6 2.2 R DS(on) - Normalized R DS(on) - Normalized 2.4 2.2 2 1.8 I D = 3.6A 1.6 1.4 I D = 1.8A 1.2 1 2 1.8 1.6 1.4 1.2 TJ = 25ºC 0.8 1 0.6 0.4 0.8 -50 -25 0 25 50 75 100 125 150 0 1 2 Fig. 5. Maximum Drain Current v s. Case Temperature 4 5 6 6.5 7 Fig. 6. Input Admittance 4 4 3.5 3.5 3 3 I D - Amperes I D - Amperes 3 I D - Amperes T J - Degrees Centigrade 2.5 2 1.5 2.5 2 1.5 1 1 0.5 0.5 0 TJ = 125ºC 25ºC -40ºC 0 -50 -25 0 25 50 75 T C - Degrees Centigrade © 2006 IXYS CORPORATION All rights reserved 100 125 150 4 4.5 5 5.5 V GS - Volts 6 IXTA4N80P IXTP4N80P Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 7 12 11 TJ = - 40ºC 6 10 9 TJ = 25ºC I S - Amperes g f s - Siemens 5 4 TJ = 125ºC 3 8 7 6 5 TJ = 125ºC 4 2 3 TJ = 25ºC 2 1 1 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0.4 0.5 0.6 I D - Amperes Fig. 9. Gate Charge 0.8 0.9 Fig. 10. Capacitance 10 10,000 f = 1 MHz V DS = 400V 9 Capacitance - PicoFarads I D = 1.8A 8 I G = 10mA C iss 1,000 7 V GS - Volts 0.7 V SD - Volts 6 5 4 3 100 C oss 10 C rss 2 1 0 1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 5 10 Q G - NanoCoulombs 15 20 25 30 35 40 V DS - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 10.00 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse W idth - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_4N80P (3J) 10-23-06.xls