MITSUBISHI Nch POWER MOSFET FS50SM-2 HIGH-SPEED SWITCHING USE FS50SM-2 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 20.0 5.0 r 4 2 f 3.2 19.5MIN. 2 1.0 q w 5.45 4.4 G e 5.45 0.6 2.8 4 wr ¡10V DRIVE ¡VDSS ................................................................................ 100V ¡rDS (ON) (MAX) .............................................................. 55mΩ ¡ID ......................................................................................... 50A ¡Integrated Fast Recovery Diode (TYP.) ........... 105ns q GATE w DRAIN e SOURCE r DRAIN q e TO-3P APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 100 V VGSS ID Gate-source voltage Drain current VDS = 0V ±20 50 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) 200 50 A A IS ISM Source current Source current (Pulsed) 50 200 A A PD T ch Maximum power dissipation Channel temperature 70 –55 ~ +150 W °C –55 ~ +150 °C g T stg — Parameter Conditions L = 50µH Storage temperature Weight Typical value 4.8 Feb.1999 MITSUBISHI Nch POWER MOSFET FS50SM-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance VDS (ON) y fs Drain-source on-state voltage Forward transfer admittance Ciss Coss Input capacitance Output capacitance Crss td (on) Reverse transfer capacitance Turn-on delay time tr td (off) Rise time Turn-off delay time tf Fall time VSD Rth (ch-c) Source-drain voltage Thermal resistance trr Reverse recovery time Limits Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 100V, V GS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V Unit Min. Typ. Max. 100 — — — — ±0.1 V µA — 2.0 — 3.0 0.1 4.0 mA V — 39 55 mΩ ID = 25A, VDS = 10V — — 0.98 33 1.38 — V S VDS = 10V, VGS = 0V, f = 1MHz — — 2300 410 — — pF pF — — 185 35 — — pF ns — — 86 100 — — ns ns ID = 25A, VGS = 10V VDD = 50V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = –100A/µs — 80 — ns — — 1.0 — 1.5 1.78 — 105 — V °C/W ns PERFORMANCE CURVES 80 60 40 20 0 MAXIMUM SAFE OPERATING AREA 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 100 0 50 100 150 200 tw = 10ms 100ms 101 7 5 3 2 1ms 10ms 100 100ms 7 TC = 25°C DC 5 Single Pulse 3 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V 100 102 7 5 3 2 VGS = 20V 10V 7V 6V 50 TC = 25°C Pulse Test 80 60 6V 40 TC = 25°C Pulse Test 5V 20 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 7V 40 30 20 5V PD = 70W 10 PD = 70W 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 1 2 3 4 5 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50SM-2 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) TC = 25°C Pulse Test 4 3 ID = 80A 2 50A 1 0 20A 0 4 8 12 TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) 20 0 4 8 12 16 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 102 VDS = 10V 7 Pulse Test 5 4 3 2 101 7 5 4 3 100 0 10 20 TC = 25°C 75°C 125°C 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25°C 7 f = 1MHZ 5 3 2 Ciss Coss Crss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 20 2 104 VGS = 0V 102 7 5 3 2 20V FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 40 103 7 5 3 2 VGS = 10V 40 TRANSFER CHARACTERISTICS (TYPICAL) 60 2 60 DRAIN CURRENT ID (A) 80 0 80 0 20 TC = 25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 100 DRAIN CURRENT ID (A) 16 100 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 5 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 103 7 5 4 3 Tch = 25°C VDD = 50V VGS = 10V RGEN = RGS = 50Ω 2 td(off) 102 7 5 4 3 tf tr td(on) 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50SM-2 HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) 16 VDS = 20V 12 8 50V 80V 4 0 20 40 60 80 VGS = 0V Pulse Test TC = 125°C 40 75°C 25°C 20 0 0.4 0.8 1.2 1.6 2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 2 100 7 5 4 3 2 –50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) 0.4 60 GATE CHARGE Qg (nC) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 10–1 80 0 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 100 Tch = 25°C ID = 50A 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 D = 1.0 2 100 0.5 7 0.2 PDM 5 3 0.1 tw 2 0.05 T 10–1 0.02 7 D= tw 5 0.01 T 3 Single Pulse 2 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999