ON MCH6121-TL-H Bipolar transistor -12v, -3a, low vce(sat), pnp single mcph6 Datasheet

Ordering number : ENA1286A
MCH6121
Bipolar Transistor
–12V, –3A, Low VCE(sat), PNP Single MCPH6
http://onsemi.com
Applications
•
Relay drivers, lamp drivers, motor drivers, line switch
Features
•
•
•
•
• Large current capacity
Adoption of MBIT process
• High speed switching
Low collector-to-emitter saturation voltage
Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm)
• Halogen free compliance
High allowable power dissipation
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Conditions
Ratings
-15
V
-12
V
VEBO
IC
-5
V
-3
A
ICP
IB
Base Current
Collector Dissipation
Unit
VCBO
VCEO
Junction Temperature
PC
Tj
Storage Temperature
Tstg
-5
-600
When mounted on ceramic substrate (600mm2×0.8mm)
A
mA
1
W
150
°C
-55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7022A-007
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
6
5
Packing Type : TL
4
2
3
0.65
1
6
2
5
TL
0.3
0.85
0.25
1
AX
LOT No.
0 to 0.02
Marking
LOT No.
0.07
MCH6121-TL-H
0.15
2.1
1.6
0.25
2.0
3
4
1 : Collector
2 : Collector
3 : Base
4 : Emitter
5 : Collector
6 : Collector
MCPH6
Semiconductor Components Industries, LLC, 2013
September, 2013
Electrical Connection
1, 2, 5, 6
3
4
N2112 TKIM TC-00002851/O0808EA TIIM TC-00001605 No.A1286-1/6
MCH6121
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
hFE
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
min
typ
VCE= -2V, IC= -500mA
VCE= -2V, IC= -500mA
200
-0.1
μA
-0.1
μA
560
380
VCB= -10V, f=1MHz
IC= -1.5A, IB= -30mA
VCE(sat)
VBE(sat)
Unit
max
VCB= -12V, IE=0A
VEB= -4V, IC=0A
fT
Cob
Output Capacitance
Ratings
Conditions
MHz
40
IC= -1.5A, IB= -30mA
pF
-110
-165
-0.85
-1.2
mV
V
V(BR)CBO
V(BR)CEO
IC= -10μA, IE=0A
IC= -1mA, RBE=∞
-15
V
-12
V
V(BR)EBO
ton
IE= -10μA, IC=0A
-5
tstg
tf
See specified Test Circuit.
V
30
ns
90
ns
14
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
INPUT
OUTPUT
IB2
1kΩ
VR
50Ω
+
220μF
RL
+
470μF
VBE=5V
VCC= --5V
IC=20IB1=--20IB2=--1.5A
Ordering Information
Device
MCH6121-TL-H
Shipping
memo
MCPH6
3,000pcs./reel
Pb Free and Halogen Free
IC -- VCE
A
--12m
--6mA
--16m
--1.2
--1.0
--4mA
--0.8
--0.6
--2mA
--0.4
--2.0
--1.5
25°C --25
°C
A
--1.4
--2.5
--8mA
Collector Current, IC -- A
--1.6
VCE=--2V
--10mA
--14m
A
--1.8
IC -- VBE
--3.0
Ta=75°C
--2.0
Collector Current, IC -- A
Package
--1.0
--0.5
--0.2
0
IB=0mA
0
--0.1
--0.2 --0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Collector-to-Emitter Voltage, VCE -- V
--0.9
--1.0
IT04544
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
--1.2
IT04545
No.A1286-2/6
MCH6121
hFE -- IC
1000
Ta=75°C
3
25°C
--25°C
2
100
7
5
3
2
0.01
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
Cob -- VCB
100
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Output Capacitance, Cob -- pF
10
--1.0
2
3
5
7
2
--10
Collector-to-Base Voltage, VCB -- V
3
2
2
3
5
7 --0.1
3
C
°
25
--
5
3
2
--10
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
Collector Current, IC -- A
--1.0
7
5
10
m
0m
s
s
op
er
ati
on
3
2
(T
a=
2
5°
C
)
--0.1
7
5
Ta=25°C
Single pulse
When mounted on ceramic substrate (600mm2×0.8mm)
--0.01
--0.01
2 3
5 7 --0.1
2 3
5 7 --1.0
2 3
Collector-to-Emitter Voltage,
°C
75 C
5°
--2
--10
7
5
3
2
2
3
5 7 --0.1
2
3
2
5 7 --1.0
3
5 7 --10
IT04549
VBE(sat) -- IC
--1.0
--25°C
7
5 7 --10 2 3
VCE -- V IT13914
25°C
Ta=75°C
5
3
2
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
PC -- Ta
1.2
10
5
2
--0.1
--0.01
5
μs
ms
100
s 1
0μ
50
DC
3
IT04547
=
Ta
°C
25
3
2
3
5
7
IT04551
When mounted on ceramic substrate
(600mm2×0.8mm)
<100μs
2
2
2
IT04550
ASO
ICP= --5A
IC= --3A
3
7 --1.0
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
75
°C
°C
25
5
IC / IB=50
2
7
3
IC / IB=20
2
3
--100
2
VCE(sat) -- IC
--1.0
--0.01
IC / IB=50
Ta
=
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
5
IT04548
VCE(sat) -- IC
5
Collector Current, IC -- A
7
--100
7
5
2
2
100
3
3
3
2
5
5
3
3
Collector Current, IC -- A
f=1MHz
7
--10
7
5
5
10
--0.01
5 7 --10
IT04546
Collector Dissipation, PC -- mW
DC Current Gain, hFE
5
VCE= --2V
7
Gain-Bandwidth Product, fT -- MHz
7
fT -- IC
1000
VCE=--2V
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13915
No.A1286-3/6
MCH6121
Embossed Taping Specification
MCH6121-TL-H
No.A1286-4/6
MCH6121
Outline Drawing
MCH6121-TL-H
Land Pattern Example
Mass (g) Unit
0.008 mm
* For reference
Unit: mm
2.1
0.6
0.4
0.65 0.65
No.A1286-5/6
MCH6121
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PS No.A1286-6/6
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