ALD ALD1117PA Quad/dual p-channel matched mosfet array Datasheet

ADVANCED
LINEAR
DEVICES, INC.
ALD1107/ALD1117
QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY
GENERAL DESCRIPTION
APPLICATIONS
The ALD1107/ALD1117 are monolithic quad/dual P-channel enhancement mode matched MOSFET transistor arrays intended for a broad range
of precision analog applications. The ALD1107/ALD1117 offer high input
impedance and negative current temperature coefficient. The transistor
pairs are matched for minimum offset voltage and differential thermal
response, and they are designed for precision analog switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. These
MOSFET devices feature very large (almost infinite) current gain in a low
frequency, or near DC operating environment. The ALD1107/ALD1117 are
builiding blocks for differential amplifier input stages, transmission gates,
multiplexer applications, current sources, current mirrors and other precision analog circuits.
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FEATURES
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Low threshold voltage of -0.7
Low input capacitance
Low VOS 2mV typical
High input impedance -- 1014Ω typical
Low input and output leakage currents
Negative current (IDS) temperature coefficient
Enhancement-mode (normally off)
DC current gain 10 9
Low input and output leakage currents
PIN CONFIGURATION
1
ALD1117
DP1
1
8
DP2
GP1
2
7
GP2
SP1
3
6
SP2
V-
4
5
V+
DA, PA, SA PACKAGE
1
ALD1107
ORDERING INFORMATION
-55°C to +125°C
Precision current sources
Precision current mirrors
Voltage Choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Precision analog signal processing
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
DP1
1
14
DP2
GP1
2
13
GP2
SP1
3
12
SP2
V-
4
11
V+
8-Pin CERDIP
Package
8-Pin Plastic Dip
Package
8-Pin SOIC
Package
DP4
5
10
DP3
ALD1117 DA
ALD1117PA
ALD1117 SA
GP4
6
9
GP3
14-Pin CERDIP
Package
14-Pin Plastic Dip
Package
14-Pin SOIC
Package
SP4
7
8
SP3
ALD1107 DB
ALD1107 PB
ALD1107 SB
DB, PB, SB PACKAGE
* Contact factory for industrial temperature range.
BLOCK DIAGRAM
BLOCK DIAGRAM
ALD1107
ALD1117
V- (4)
DP2 (14)
DP1 (1)
GP2 (13)
GP1 (2)
SP1 (3)
V+ (11)
SP2 (12)
~
V - (4)
DP4 (5)
DP3 (10)
GP3 (9)
DP1 (1)
GP4 (6)
SP3 (8)
V+ (11)
SP4 (7)
~
DP2 (8)
GP1 (2)
GP2 (7)
SP1 (3)
V+ (5)
SP2 (6)
© 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS
Gate-source voltage, VGS
Power dissipation
Operating temperature range
-13.2V
-13.2V
500 mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
PA, SA, PB, SB package
DA, DB package
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
ALD1107
Parameter
Symbol
Gate Threshold
Voltage
VT
Offset Voltage
VGS1-VGS2
VOS
Gate Threshold
Temperature
Drift 2
Typ
Max
-0.4
-0.7
-1.0
2
10
Transconductance
Min
-0.4
-1.3
TCVT
On Drain
Current
ALD1117
Min
Typ
Test
Max
-0.7
-1.0
2
10
-1.3
IDS (ON)
-1.3
-2
-1.3
-2
GIS
0.25
0.67
0.25
0.67
Unit
V
mV
Conditions
I DS = -1.0µA VGS = VDS
IDS = -10µA VGS = VDS
mV/°C
mA
VGS = VDS = -5V
mmho VDS = -5V IDS = -10mA
Mismatch
∆Gfs
0.5
0.5
%
Output
Conductance
GOS
40
40
µmho
VDS = -5V IDS = -10mA
Ω
VDS = -0.1V VGS = -5V
%
VDS = -0.1V VGS = -5V
V
IDS = -1.0µA VGS = 0V
Drain Source
On Resistance
1200
R DS (ON)
Drain Source
On Resistance
Mismatch
∆RDS (ON)
Drain Source
Breakdown
Voltage
BVDSS
1800
1200
0.5
1800
0.5
-12
-12
Off Drain
Current 1
IDS (OFF)
10
400
4
10
400
4
pA
nA
VDS = -12V VGS = 0V
TA = 125°C
Gate Leakage
Current
IGSS
0.1
10
1
0.1
10
1
pA
nA
VDS = 0V VGS = -12V
TA = 125°C
Input
Capacitance 2
CISS
1
3
1
3
pF
Notes:
1
2
Consists of junction leakage currents
Sample tested parameters
ALD1107/ALD1117
Advanced Linear Devices
2
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS
LOW VOLTAGE OUTPUT
CHARACTERISTICS
VGS = -12V
VBS = 0V
TA = 25°C
-7.5
DRAIN SOURCE CURRENT
(µA)
DRAIN SOURCE CURRENT
(mA)
500
-10
-10V
-8V
-5.0
-6V
-2.5
-4V
-2V
0
250
-4V
-2V
0
-250
-2
-4
-6
-8
-10
-12
-320
-160
DRAIN SOURCE VOLTAGE (V)
320
160
0
DRAIN SOURCE VOLTAGE (mV)
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
FORWARD TRANSCONDUCTANCE
vs. DRAIN SOURCE VOLTAGE
-20
1.0
IDS = -5mA
VBS = 0V
f = 1KHz
0.5
DRAIN SOURCE CURRENT
(µA)
FORWARD TRANSCONDUCTANCE
(mmho)
-6V
-500
0
0.2
0.1
TA = +125°C
TA = +25°C
0.05
IDS = -1mA
0.02
VBS = 0V
4V
6V
8V
10V
12V
2V
-15
-10
-5
VGS = VDS
TA = 25°C
0
0.01
0
-2
-4
-6
-8
-10
0
-12
-0.8
DRAIN SOURCE ON RESISTANCE
RDS (ON) vs. GATE SOURCE VOLTAGE
-2.4
-3.2
-4.0
OFF DRAIN CURRENT vs.
AMBIENT TEMPERATURE
OFF DRAIN SOURCE CURRENT
(pA)
100
VDS = 0.4V
VBS = 0V
10
-1.6
GATE SOURCE VOLTAGE (V)
DRAIN SOURCE VOLTAGE (V)
DRAIN SOURCE ON RESISTANCE
(KΩ)
VGS = -12V
VBS = 0V
TA = 25°C
TA = +125°C
1
TA = +25°C
1000
VDS = -12V
VGS = VBS = 0V
100
10
1
0.1
0
-2
-4
-6
-8
-10
-12
-25
0
+25
+50
+75
+100 +125
AMBIENT TEMPERATURE (°C)
GATE SOURCE VOLTAGE (V)
ALD1107/ALD1117
-50
Advanced Linear Devices
3
TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
CURRENT SOURCE WITH GATE CONTROL
V+ = +5V
V+ = +5V
1/2 ALD1107
or ALD1117
1/2 ALD1107
or ALD1117
V+ = +5V
Q4
Q3
ISET
Q3
Q4
RSET
ISET
I SOURCE
Q1
ON
Q2
I SOURCE = ISET
= V+ -Vt
RSET
~
=
4
RSET
1/2 ALD1106
or ALD1116
Q1, Q2: N - Channel MOSFET
Q3, Q4: P - Channel MOSFET
1/4 ALD1106
or 1/2 ALD1116
Q1
: N - Channel MOSFET
Q3,Q4 : P - Channel MOSFET
CURRENT SOURCE MULTIPLICATION
1/2 ALD1107
or ALD1117
V+ = +5V
PMOS PAIR
Q3
Q1
OFF
DIFFERENTIAL AMPLIFIER
V+
ISOURCE
RSET
Digital Logic Control
of Current Source
ISET
RSET
ISOURCE = ISET x N
Q4
VOUT
Q1
VIN+
Q2
NMOS PAIR
1/2 ALD1106
or ALD1116
Q2
Q3
QN
Current
Source
Q1, Q2: N - Channel MOSFET
Q3, Q4: P - Channel MOSFET
ALD1107/ALD1117
Q1
QSET
VIN-
QSET, Q1..QN: ALD1106 or ALD1116
N - Channel MOSFET
Advanced Linear Devices
4
TYPICAL APPLICATIONS
BASIC CURRENT SOURCES
N- CHANNEL CURRENT SOURCE
P- CHANNEL CURRENT SOURCE
V+ = +5V
V+ = +5V
1/2 ALD1107
or ALD1117
RSET
ISET
ISOURCE
8
Q2 8
5
6
Q1
2
7
3
2
Q4
5
1
I SOURCE
ISET
1/2 ALD1106
or ALD1116
ISOURCE = ISET =
7
6
Q3
3
V+ - Vt
RSET
V+ - 1.0 ~
~
=
=
RSET
RSET
4
RSET
Q3, Q4: P - Channel MOSFET
Q1, Q2 : N - Channel MOSFET
CASCODE CURRENT SOURCES
V+ = +5V
V+ = +5V
ALD1107
ISET
RSET
ISOURCE
Q4
Q1
Q2
Q3
Q4
Q3
Q2
Q1
ISET
ISOURCE
RSET
ALD1106
ISOURCE = ISET =
~
=
3
RSET
Q1, Q2, Q3, Q4: P - Channel MOSFET
(ALD1102 or ALD1103)
Q1, Q2, Q3, Q4: N - Channel MOSFET
(ALD1101 or ALD1103)
ALD1107/ALD1117
V+ - 2Vt
RSET
Advanced Linear Devices
5
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