AO6419 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6419 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6419 is Pb-free (meets ROHS & Sony 259 specifications). AO6419L is a Green Product ordering option. AO6419 and AO6419L are electrically identical. VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) RDS(ON) < 110mΩ (VGS = -3.5V) D TSOP6 Top View D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V -20 2 W 1.4 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -4.2 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -5 TA=25°C Power Dissipation A Maximum -30 RθJA RθJL Typ 47.5 74 37 Max 62.5 110 50 Units °C/W °C/W °C/W AO6419 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -20 TJ=55°C -5 VGS=-10V, ID=5.0A TJ=125°C Rg Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) -3 V 39 52 54 70 A 87 mΩ mΩ -1 V -2.8 A 840 pF VDS=-5V, ID=-5A 6 8.6 -0.77 700 VGS=0V, VDS=-15V, f=1MHz S 120 pF 75 VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-5A Ω 14.7 18 nC 7.6 9.5 nC Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs 23.5 Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 13.4 VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω pF 15 10 Qgs Qrr mΩ 110 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance -1.8 85 IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Output Capacitance nA 67 Forward Transconductance Crss ±100 VGS=-3.5V, ID=-1A gFS Coss µA VGS=-4.5V, ID=-4A VSD IS Units -1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max V VDS=-24V, VGS=0V IDSS RDS(ON) Typ 2 nC 3.8 nC 8.3 ns 5 ns 29 ns 14 ns 30 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0: Nov 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO6419 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 20 -10V -4.5V -6V -5V 10 -3.5V VGS=-3V 5 VDS=-5V 8 -4V -ID(A) -ID (A) 15 6 4 125°C 2 25°C -2.5V 0 0.00 0 1.00 2.00 3.00 4.00 5.00 0 1 2 100 Normalized On-Resistance 80 RDS(ON) (mΩ) 4 1.6 VGS=-3.5V VGS=-4.5V 60 VGS=-10V 40 20 1 3 5 7 VGS=-4.5V 1.4 VGS=-10V 1.2 VGS=-3.5V 1 ID=-5A 0.8 9 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 160 1E+01 140 1E+00 ID=-5A 120 1E-01 100 1E-02 -IS (A) RDS(ON) (mΩ) 3 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 125°C 80 125°C 1E-03 25°C 1E-04 60 1E-05 25°C 40 1E-06 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO6419 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=-15V ID=-5A 1000 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 800 600 400 Coss 200 0 Crss 0 0 2 4 6 8 10 12 14 16 0 5 -Qg (nC) Figure 7: Gate-Charge Characteristics TJ(Max)=150°C TA=25°C 40 25 30 30 100µs 1ms 0.1s 20 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) 100 10 10ms 1 20 10 1s 10s DC 0 0.001 0.1 0.1 1 10 100 -VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000