ON MMBD352LT3G Dual hot carrier mixer diode Datasheet

MMBD352LT1G,
MMBD353LT1G,
MMBD354LT1G,
MMBD355LT1G
Dual Hot Carrier Mixer
Diodes
http://onsemi.com
These devices are designed primarily for UHF mixer applications
but are suitable also for use in detector and ultra−fast switching
circuits.
3
1
SOT−23 (TO−236)
CASE 318
2
Features
• Very Low Capacitance − Less Than 1.0 pF @ Zero V
• Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
1
ANODE
3
CATHODE/ANODE
Compliant
MMBD352LT1
STYLE 11
MAXIMUM RATINGS (EACH DIODE)
Rating
Continuous Reverse Voltage
Symbol
Value
Unit
VR
7.0
VCC
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
1
CATHODE
3
CATHODE/ANODE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
PD
RqJA
PD
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1 ANODE
3
CATHODE
2 ANODE
MMBD354LT1
STYLE 9
1 CATHODE
ANODE 3
2 CATHODE
MMBD355LT1
STYLE 12
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Forward Voltage
(IF = 10 mAdc)
VF
−
0.60
V
Reverse Leakage Current (Note 3)
(VR = 3.0 V)
(VR = 7.0 V)
IR
−
−
0.25
10
Capacitance
(VR = 0 V, f = 1.0 MHz)
C
−
1.0
mA
pF
Mxx M G
G
August, 2009 − Rev. 7
1
Mxx = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in the
package dimensions section on page 2 of this data sheet.
3. For each individual diode while the second diode is unbiased.
© Semiconductor Components Industries, LLC, 2009
2
ANODE
MMBD353LT1
STYLE 19
(EACH DIODE)
Rating
2
CATHODE
1
Publication Order Number:
MMBD352LT1/D
MMBD352LT1G, MMBD353LT1G, MMBD354LT1G, MMBD355LT1G
TYPICAL CHARACTERISTICS
1.0
TA = 85°C
C, CAPACITANCE (pF)
I F, FORWARD CURRENT (mA)
100
10
TA = -40°C
1.0
TA = 25°C
0.1
0.9
0.8
0.7
0.6
0.3
0.4
0.5
0.6
0.7
0.8
0
1.0
2.0
3.0
VF, FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Forward Voltage
Figure 2. Capacitance
4.0
ORDERING INFORMATION
Device
Package
Shipping†
SOT−23
(Pb−Free)
3,000 Units / Tape & Reel
SOT−23
(Pb−Free)
10,000 Units / Tape & Reel
SOT−23
(Pb−Free)
3,000 Units / Tape & Reel
SOT−23
(Pb−Free)
10,000 Units / Tape & Reel
M6H
SOT−23
(Pb−Free)
3,000 Units / Tape & Reel
MJ1
SOT−23
(Pb−Free)
3,000 Units / Tape & Reel
Marking
MMBD352LT1G
MMBD352LT3G
M5G
MMBD353LT1G
MMBD353LT3G
MMBD354LT1G
MMBD355LT1G
M4F
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MMBD352LT1G, MMBD353LT1G, MMBD354LT1G, MMBD355LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.
SEE VIEW C
3
HE
E
c
1
DIM
A
A1
b
c
D
E
e
L
L1
HE
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
L1
VIEW C
MMBD352LT1
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
MMBD353LT1
SOLDERING FOOTPRINT*
STYLE 19:
PIN 1. CATHODE
2. ANODE
3. CATHODE−ANODE
0.95
0.037
0.95
0.037
MMBD354LT1
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
MMBD355LT1
2.0
0.079
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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3
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For additional information, please contact your local
Sales Representative
MMBD352LT1/D
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