SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT796A 1.0 ISSUE 3 - OCTOBER 1995 FEATURES * 200 Volt VCEO * Gain of 250 at IC=0.3 Amps * Very low saturation voltage APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE FZT696B PARTMARKING DETAIL FZT796A 0.8 ABSOLUTE MAXIMUM RATINGS. TYPICAL CHARACTERISTICS 1.8 1.6 - (Volts) 1.4 IC/IB=40 IC/IB=20 IC/IB=10 1.8 Tamb=25°C 1.0 0.8 0.6 0.6 0.4 0.4 V V 1.4 1.2 - (Volts) 1.2 0.2 0 0.001 0.01 0.1 1 -55°C +25°C +100°C +175°C 1.6 0.2 0 0.001 10 VCE=10V 750 500 0.8 0.6 250 0.4 0.2 0.01 0.1 1.4 IC/IB=10 C E C B PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -200 V Collector-Emitter Voltage VCEO -200 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 0.8 0.6 SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Breakdown Voltage Collector-Base Collector-Emitter V(BR)CBO -200 V IC=-100µ A V(BR)CEO -200 V IC=-10mA* -5 Emitter-Base V(BR)EBO V IE=-100µ A ICBO -0.1 µA VCB=-150V Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.2 -0.3 -0.3 V V V IC=-50mA, IB=-2mA* IC=-100mA, IB=-5mA* IC=-200mA, IB=-20mA* 0.01 0.1 1 10 1 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 DC 1s 100ms 10ms 1ms 100µs 0.01 C 0.01 0.1 1 0.001 10 IC - Collector Current (Amps) °C Collector Cut-Off Current IC - Collector Current (Amps) I -Collector Current (A) V - (Volts) 1.4 -55 to +150 0.2 0 VCE=10V W PARAMETER -0.95 Base-EmitterSaturationVoltage VBE(sat) -55°C +25°C +100°C A 2 0.4 IC - Collector Current (Amps) 1.6 -0.5 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 1.0 10 1 10 1.2 - (Volts) 1.0 0 1 -55°C +25°C +100°C +175°C 1.6 V 1.4 1.2 +100°C +25°C -55°C - Typical Gain 1.6 0.1 IC - Collector Current (Amps) h h - Normalised Gain IC - Collector Current (Amps) 0.01 IC/IB=20 FZT796A 1 10 100 VCE - Collector Emitter Voltage (V) Safe Operating Area 1000 Base-EmitterTurn-OnVoltage VBE(on) Static Forward Current Transfer Ratio hFE 300 300 250 100 Transition Frequency fT 100 Input Capacitance Cibo Output Capacitance Cobo Switching Times ton toff -0.67 V IC=-200mA,IB=-20mA* V IC=-200mA,VCE=-10V* 800 IC=-10mA, VCE=-10V* IC=-100mA, VCE=-10V* IC=-300mA, VCE=-10V* IC=-400mA, VCE=-10V* MHz IC=-50mA, VCE=-5V f=50MHz 225 pF VEB=-0.5V, f=1MHz 12 pF VCB=-10V, f=1MHz 100 3200 ns ns IC=-100mA, IB1=-10mA IB2=-10mA, VCC=-50V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 256 3 - 255 SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT796A 1.0 ISSUE 3 - OCTOBER 1995 FEATURES * 200 Volt VCEO * Gain of 250 at IC=0.3 Amps * Very low saturation voltage APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE FZT696B PARTMARKING DETAIL FZT796A 0.8 ABSOLUTE MAXIMUM RATINGS. TYPICAL CHARACTERISTICS 1.8 1.6 - (Volts) 1.4 IC/IB=40 IC/IB=20 IC/IB=10 1.8 Tamb=25°C 1.0 0.8 0.6 0.6 0.4 0.4 V V 1.4 1.2 - (Volts) 1.2 0.2 0 0.001 0.01 0.1 1 -55°C +25°C +100°C +175°C 1.6 0.2 0 0.001 10 VCE=10V 750 500 0.8 0.6 250 0.4 0.2 0.01 0.1 1.4 IC/IB=10 C E C B PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -200 V Collector-Emitter Voltage VCEO -200 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 0.8 0.6 SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Breakdown Voltage Collector-Base Collector-Emitter V(BR)CBO -200 V IC=-100µ A V(BR)CEO -200 V IC=-10mA* -5 Emitter-Base V(BR)EBO V IE=-100µ A ICBO -0.1 µA VCB=-150V Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.2 -0.3 -0.3 V V V IC=-50mA, IB=-2mA* IC=-100mA, IB=-5mA* IC=-200mA, IB=-20mA* 0.01 0.1 1 10 1 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 DC 1s 100ms 10ms 1ms 100µs 0.01 C 0.01 0.1 1 0.001 10 IC - Collector Current (Amps) °C Collector Cut-Off Current IC - Collector Current (Amps) I -Collector Current (A) V - (Volts) 1.4 -55 to +150 0.2 0 VCE=10V W PARAMETER -0.95 Base-EmitterSaturationVoltage VBE(sat) -55°C +25°C +100°C A 2 0.4 IC - Collector Current (Amps) 1.6 -0.5 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 1.0 10 1 10 1.2 - (Volts) 1.0 0 1 -55°C +25°C +100°C +175°C 1.6 V 1.4 1.2 +100°C +25°C -55°C - Typical Gain 1.6 0.1 IC - Collector Current (Amps) h h - Normalised Gain IC - Collector Current (Amps) 0.01 IC/IB=20 FZT796A 1 10 100 VCE - Collector Emitter Voltage (V) Safe Operating Area 1000 Base-EmitterTurn-OnVoltage VBE(on) Static Forward Current Transfer Ratio hFE 300 300 250 100 Transition Frequency fT 100 Input Capacitance Cibo Output Capacitance Cobo Switching Times ton toff -0.67 V IC=-200mA,IB=-20mA* V IC=-200mA,VCE=-10V* 800 IC=-10mA, VCE=-10V* IC=-100mA, VCE=-10V* IC=-300mA, VCE=-10V* IC=-400mA, VCE=-10V* MHz IC=-50mA, VCE=-5V f=50MHz 225 pF VEB=-0.5V, f=1MHz 12 pF VCB=-10V, f=1MHz 100 3200 ns ns IC=-100mA, IB1=-10mA IB2=-10mA, VCC=-50V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 256 3 - 255