ESM4045DV NPN DARLINGTON POWER MODULE ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS: MOTOR CONTROL ■ SMPS & UPS ■ DC/DC & DC/AC CONVERTERS ■ WELDING EQUIPMENT ■ ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV Parameter Collector-Emitter Voltage (V BE = -5 V) V CEO(sus) Collector-Emitter Voltage (I B = 0) V EBO IC I CM Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp = 10 ms) Value Uni t 600 V 450 V 7 V 42 63 A A Base Current 4 A I BM Base Peak Current (t p = 10 ms) 8 A P t ot T stg Total Dissipation at T c = 25 C St orage Temperature IB Tj V ISO July 1997 o 150 -55 to 150 W C o Max. Operating Junction Temperature 150 o C Insulation W ithstand Voltage (AC-RMS) 2500 o C 1/8 ESM4045DV THERMAL DATA R t hj-ca se R t hj-ca se R thc -h Thermal Resistance Junction-case (transistor) Thermal Resistance Junction-case (diode) Thermal Resistance Case-heats ink With Conductive Grease Applied Max Max 0.83 1.5 o Max 0.05 o o C/W C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it I CER # Collector Cut-off Current (R BE = 5 Ω) V CE = V CEV V CE = V CEV T j = 100 o C 1.5 20 mA mA I CEV # Collector Cut-off Current (V BE = -5) V CE = V CEV V CE = V CEV T j = 100 o C 1 13 mA mA Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA I EBO # V CEO(SUS) * Collector-Emitter Sustaining Voltage hFE∗ V CE(sat )∗ V BE(s at)∗ 450 I C = 0.2 A L = 25 mH V c la mp = 450 V V DC Current G ain I C = 35 A V CE = 5 V 220 Collector-Emitter Saturation Voltage IC IC IC IC IB IB IB IB 1.15 1.3 1.4 1.5 = = = = 25 25 35 35 A A A A = = = = 0.5 A 0.5 A T j = 100 o C 2A 2A Tj = 100 o C 2.3 2.3 3 V V Base-Emitter Saturation Voltage I C = 35 A I C = 35 A Rate of Rise of On-state Collector V CC = 300 V I B1 = 0.75 A RC = 0 tp = 3 µs o T j = 100 C V CE (3 µs) Collector-Emitter Dynamic Voltage V CC = 300 V I B1 = 0.75 A R C = 12 Ω o T j = 100 C 4.5 8 V VCE (5 µs) Collector-Emitter Dynamic Voltage V CC = 300 V I B1 = 0.75 A R C = 12 Ω o T j = 100 C 2.5 4.5 V Storage Time Fall T ime Cross-over T ime I C = 25A V BB = -5 V V c la mp = 450 V L = 0.1 mH V CC = 50 V R BB = 0.6 Ω I B1 = 0.5 A o Tj = 100 C 3.2 0.25 0.75 5 0.5 1.5 µs µs µs Maximum Collector Emitter Voltage Without Snubber I CW off = 42 A V BB = -5 V L = 0.06 mH T j = 125 o C I B1 = 2 A V CC = 50 V R BB = 0.6 Ω V F∗ Diode Forward Voltage I F = 35 A Tj = 100 C I RM Reverse Recovery Current V CC = 200 V IF = 35 A di F /dt = -200 A/µs L < 0.05 µH o T j = 100 C di C /dt ts tf tc V CEW IB = 2 A IB = 2 A 2 V V V V 2 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % To evaluate the conduction losses of the diode use the following equations: P = 1.5 IF(AV) + 0.001 I2F(RMS) VF = 1.5 + 0.001 IF # See test circuits in databook introduction 2/8 Tj = 100 o C o 200 250 A/µs 450 V 1.5 1.85 V 20 24 A ESM4045DV Safe Operating Areas Thermal Impedance Derating Curve Collector-emitter Voltage Versus base-emitter Resistance Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/8 ESM4045DV Reverse Biased SOA Foward Biased SOA Reverse Biased AOA Forward Biased AOA Switching Times Inductive Load Switching Times Inductive Load Versus Temperature 4/8 ESM4045DV Dc Current Gain Typical VF Versus I F Peak Reverse Current Versus diF/dt Turn-on Switching Test Circuit Turn-on Switching Waveforms 5/8 ESM4045DV Turn-on Switching Test Circuit Turn-off Switching Waveforms Turn-off Switching Test Circuit of Diode Turn-off Switching Waveform of Diode 6/8 ESM4045DV ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 O 7.8 0.157 0.157 8.2 0.307 0.322 A G B O F E H D N J C K L M 7/8 ESM4045DV Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 8/8