Kersemi HLDD2N60 N-channel enhancement mode power mosfet Datasheet

HLDD2N60
N-Channel Enhancement Mode Power MOSFET
Description
Features
The HLDD2N60 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Application
□
□
□
Power switchingapplication
Hard switched and high frequencycircuits
□ VDS =600V,ID =2A
□ RDS(ON):5Ω@VGS=10V
□ Low gatecharge.
□ Green deviceavailable.
□ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON).
□ Excellentpackageforgoodheatdissipation.
Uninterruptible powersupply
Marking and pin assignment
N-Channel MOSFET
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
2
A
ID
Drain Current-Continuous
1.3
A
Pulsed Drain Current
IDM
6
A
Maximum Power Dissipation
PD
130
W
0.43
W/℃
EAS
120
TJ,TSTG
-55 To 175
mJ
℃
Drain Current-Continuous(TC=100℃)
ID (100℃)
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
Thermal Characteristic
(Note 2)
Thermal Resistance,Junction-to-Case
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RθJC
Page 1
0.43
℃/W
2017 . H1.0
HLDD2N60
Package Marking and Ordering Information
Part NO.
HLDD2N60
Marking
Package
HLDD2N60
TO-252
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=600V,VGS=0V
-
Gate-Body Leakage Current
IGSS
VGS=±30V,VDS=0V
-
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2
Drain-Source On-State Resistance
RDS(ON)
Typ
Max
Unit
-
-
V
-
10
μA
-
±100
nA
Off Characteristics
On Characteristics
600
(Note 3)
Forward Transconductance
Dynamic Characteristics
VGS=10V, ID=1A
-
VGS=4.5V, ID=0A
gFS
VDS=40V,ID=1A
-
-
4
3.8
5
-
2.5
-
V
Ω
S
(Note4)
-
380
490
PF
-
35
46
PF
Crss
-
7.6
9.9
PF
Turn-on Delay Time
td(on)
-
16
40
nS
Turn-on Rise Time
tr
VDD=300V,ID=2A,
-
50
110
nS
td(off)
RG=2.5Ω
-
40
90
nS
-
40
90
nS
-
15.3
nC
-
1.8
nC
-
7.2
nC
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
VDS=25V,VGS=0V
, F=1.0MHz
(Note 4)
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=480V,ID=2A
, VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VSD
Diode Forward Current
(Note 2)
IS
Reverse Recovery Time
VGS=0V,IS=2A
VGS=0V,IS=2A
trr
Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
-
dIf/dt=100A/us
-
-
V
2
A
-
250
-
nS
-
1.31
-
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1:Pulse width limited by maximum junctiontemperature
2:L=55mH, IBASB=2.0A, VBDDB=50V, RBGB=25 Ω,StartingTBJB=25℃
3:IBSDB ≤2A,di/dt ≤300A/μs,VDD≤BVBDSSB, Starting TBJB=25℃
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
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2017 . H1.0
HLDD2N60
ELECTRICAL CHARACTERISTICS (curves)
Transfer Characteristics
On-Region Characteristics
10
VGS
15V
10V
8V
7V
6.5V
6V
5.5V
Bottom 5V
150℃
ID [A]
ID [A ]
Top
1
1
1. Notes
250μs:
pulse test
2. TC=25℃
0.1
1
Notes:
1.250μs pulse test
2.VDS=40V
25℃
0.1
10
2
4
6
VDS[V]
8
10
VGS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
7.5
6.5
VGS=10V
6.0
I DR [A]
RDS(on) [ Ω ]
7.0
25℃
1
5.5
VGS=20V
150℃
5.0
4.5
Notes:
1. 250μs pulse test
2. VGS=0V
Note :Tj=25 ℃
4.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.1
0.4
0.5
0.6
0.7
0.8
ID[A]
0.9
1.0
1.1
1.2
1.3
V S D [V]
Capacitance Characteristics
Gate Charge Characteristics
12
VDS=480V
10
VGS Gate Source Voltage[V ]
VDS=300V
8
VDS=120V
6
4
2
0
0
2
4
6
8
10
12
14
16
18
Qg Toltal Gate Charge [nC]
ELECTRICAL CHARACTERISTICS (curves)
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2017 . H1.0
HLDD2N60
Breakdown Voltage Variation vs.
Temperature
On-Resistance Variation
vs. Temperature
3.0
1.2
2.5
RDS(on)(Normalized)
BVDSS(Normalized)
1.1
1.0
1. VGS=0V
Notes:
2. ID=250μA
0.9
2.0
1.5
o es:
1.0
N
0.5
1. V GS=10V
2. I D =1.0 A
0.8
-75
-50
-25
0
25
50
75
100
125
150
Tj [℃]
0.0
-75
-50
-25
0
25
50
75
100
125
150
Tj [ ℃]
Maximum Safe Operating Area For
JCS2N60V/R/C
Maximum Safe Operating Area For
JCS2N60F
Maximum Drain Current
vs. Case Temperature
2.0
1.8
ID Drain Current [A
]
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
50
75
100
125
150
TC Case Temperature [℃]
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2017 . H1.0
HLDD2N60
ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve For
JCS2N60V/R
Transient Thermal Response Curve For
JCS2N60C
Transient Thermal Response Curve For
JCS2N60F
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2017 . H1.0
HLDD2N60
TO-252 Package Information
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Page 6
2017 . H1.0
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