DMG96401 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits DMG56401 in SSMini6 type package Features Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: E6 Basic Part Number DRC2114E + DRA2114E (Individual) Packaging DMG964010R Embossed type (Thermo-compression sealing): 8 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V IC 100 mA Collector current Tr2 Collector-base voltage (Emitter open) VCBO –50 V Collector-emitter voltage (Base open) VCEO –50 V Collector current IC –100 mA Total power dissipation PT 125 mW Tj 150 °C Tstg –55 to +150 °C Overall Junction temperature Storage temperature Publication date: February 2013 Ver. EED 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) Panasonic JEITA Code 4: Emitter (Tr2) 5: Base (Tr2) 6: Collecter (Tr1) SSMini6-F3-B SC-107C SOT-666 (C1) 6 (B2) 5 R1 Tr1 R2 1 (E1) Resistance value Tr1 Tr2 (E2) 4 R2 Tr2 R1 2 (B1) 3 (C2) R1 10 kΩ R2 10 kΩ R1 10 kΩ R2 10 kΩ 1 DMG96401 Electrical Characteristics Ta = 25°C±3°C Tr1 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.5 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.5 mA Input voltage (ON) VI(on) VCE = 0.2 V, IC = 5 mA Input voltage (OFF) VI(off) VCE = 5 V, IC = 100 µA 35 0.25 2.1 V V 0.8 V Input resistance R1 –30% 10 +30% kΩ Resistance ratio R1 / R2 0.8 1.0 1.2 Max Unit Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Tr2 Parameter Symbol Conditions Min Typ Collector-base voltage (Emitter open) VCBO IC = –10 µA, IE = 0 –50 V Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 V Collector-base cutoff current (Emitter open) ICBO VCB = –50 V, IE = 0 – 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = –50 V, IB = 0 – 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = –6 V, IC = 0 – 0.5 mA Forward current transfer ratio hFE VCE = –10 V, IC = –5 mA Collector-emitter saturation voltage VCE(sat) IC = –10 mA, IB = – 0.5 mA Input voltage (ON) VI(on) VCE = – 0.2 V, IC = –5 mA Input voltage (OFF) VI(off) VCE = –5 V, IC = –100 µA 35 – 0.25 –2.1 V V – 0.8 V Input resistance R1 –30% 10 +30% kΩ Resistance ratio R1 / R2 0.8 1.0 1.2 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Ver. EED 2 DMG96401 Common characteristics chart DMG96401_PT-Ta PT Ta Total power dissipation PT (mW) 150 125 100 75 50 25 0 0 40 80 120 160 200 Ambient temperature Ta (°C) Characteristics charts of Tr1 DMG96401(Tr1)_IC-VCE DMG96401(Tr1)_hFE-IC 120 500 Collector current IC (mA) IB = 350 µA 300 µA 80 250 µA 60 200 µA 40 150 µA 20 100 µA 0 Forward current transfer ratio hFE Ta = 25°C 100 50 µA 0 2 4 6 8 10 400 Ta = 85°C 300 25°C 200 −30°C 100 0 0.1 12 VCE(sat) IC VCE = 10 V Collector-emitter voltage VCE (V) 1 10 100 10 IC / IB = 20 1 0.1 Ta = 85°C −30°C 25°C 0.01 0.1 1 10 100 Collector current IC (mA) Collector current IC (mA) DMG96401(Tr1)_IO-VIN DMG96401(Tr1)_VIN-IO IO VIN 10 DMG96401(Tr1)_VCEsat-IC hFE IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE VIN IO 100 VO = 5 V VO = 0.2 V Input voltage VIN (V) Output current IO (mA) Ta = 85°C 1 25°C 10−1 −30°C 10−2 10−3 0 0.5 1.0 1.5 Input voltage VIN (V) 2.0 10 25°C 85°C 1 0.1 0.1 Ta = −30°C 1 10 100 Output current IO (mA) Ver. EED 3 DMG96401 Characteristics charts of Tr2 DMG96401(Tr2)_IC-VCE DMG96401(Tr2)_hFE-IC −120 IB = −800 µA Collector current IC (mA) −100 −700 µA −600 µA −500 µA −80 −400 µA −60 −300 µA −40 −200 µA −20 Forward current transfer ratio hFE 300 Ta = 25°C DMG96401(Tr2)_VCEsat-IC hFE IC VCE(sat) IC VCE = −10 V 250 Ta = 85°C 200 25°C 150 100 0 −2 −4 −6 −8 −10 50 0 − 0.1 −12 −10 Collector-emitter voltage VCE (V) Collector current IC (mA) DMG96401(Tr2)_IO-VIN DMG96401(Tr2)_VIN-IO IO VIN −10 −1 −10 IC / IB = 20 −1 Ta = 85°C − 0.1 −30°C −100 µA 0 Collector-emitter saturation voltage VCE(sat) (V) IC VCE −100 − 0.01 − 0.1 −30°C 25°C −1 −10 −100 Collector current IC (mA) VIN IO −100 VO = −5 V VO = − 0.2 V −1 Input voltage VIN (V) Output current IO (mA) Ta = 85°C 25°C −10−1 −30°C −10−2 −10−3 0 − 0.5 −1.0 −1.5 Input voltage VIN (V) −2.0 −10 Ta = −30°C 25°C 85°C −1 − 0.1 − 0.1 −1 −10 −100 Output current IO (mA) Ver. EED 4 DMG96401 SSMini6-F3-B Unit: mm Land Pattern (Reference) (Unit: mm) Ver. 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