600V 8A
APT8DQ60K
APT8DQ60SA
APT8DQ60KG* APT8DQ60SAG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
(K)
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
• Snubber Diode
• Ultrafast Recovery Times
• Low Losses
• PFC
D2PAK
(SA)
1
• Soft Recovery Characteristics
2
• Low Noise Switching
1
2
• Cooler Operation
• Popular TO-220 Package or
Surface Mount D2 PAK Package
• Higher Reliability Systems
• Low Forward Voltage
• Low Leakage Current
2
1
• Increased System Power
Density
• Avalanche Energy Rated
1 - Cathode
2 - Anode
Back of Case - Cathode
MAXIMUM RATINGS
Symbol
VR
All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 128°C, Duty Cycle = 0.5)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
EAVL
Avalanche Energy (1A, 40mH)
TL
600
Volts
8
16
RMS Forward Current (Square wave, 50% duty)
IFSM
TJ,TSTG
UNIT
Maximum D.C. Reverse Voltage
VRRM
IF(RMS)
APT8DQ60K_SA(G)
Amps
110
20
mJ
-55 to 175
Operating and StorageTemperature Range
°C
300
Lead Temperature for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
MIN
TYP
MAX
IF = 8A
2.0
2.4
IF = 16A
2.5
IF = 8A, TJ = 125°C
1.5
VR = 600V
MicrosemiWebsite-http://www.microsemi.com
Volts
25
VR = 600V, TJ = 125°C
UNIT
µA
500
16
pF
11-2008
VF
Characteristic / Test Conditions
053-4210 Rev G
Symbol
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
trr
Qrr
IRRM
trr
Qrr
IRRM
APT8DQ60K_SA(G)
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
VR = 400V, TC = 25°C
Reverse Recovery Time
IF = 8A, diF/dt = -200A/µs
Reverse Recovery Charge
Maximum Reverse Recovery Current
VR = 400V, TC = 125°C
Reverse Recovery Time
IF = 8A, diF/dt = -1000A/µs
Reverse Recovery Charge
Maximum Reverse Recovery Current
TYP
MAX
UNIT
-
14
-
19
-
17
-
2
-
90
ns
-
160
nC
-
3
-
43
ns
-
250
nC
-
11
Amps
MIN
TYP
ns
IF = 8A, diF/dt = -200A/µs
Maximum Reverse Recovery Current
MIN
VR = 400V, TC = 125°C
nC
-
-
Amps
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
R JC
Junction-to-Case Thermal Resistance
WT
Package Weight
Torque
MAX
UNIT
2.7
°C/W
0.07
oz
1.9
g
Maximum Mounting Torque
10
lb•in
1.1
N•m
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
2.5
D = 0.9
2.0
0.7
1.0
0.5
Note:
0.3
PDM
1.5
0.1
0.05
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0
10-5
t
SINGLE PULSE
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
11-2008
TJ (°C)
053-4210 Rev G
t1
t2
0.5
TC (°C)
1.93
0.773
Dissipated Power
(Watts)
0.00078
ZEXT
Z JC, THERMAL IMPEDANCE (°C/W)
3.0
0.0246
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
TYPICAL PERFORMANCE CURVES
APT8DQ60K_SA(G)
120
25
TJ = 175°C
20
15
TJ = 125°C
10
TJ = 25°C
5
trr, REVERSE RECOVERY TIME
(ns)
IF, FORWARD CURRENT
(A)
30
T = 125°C
J
V = 400V
R
16A
100
80
8A
4A
60
40
20
TJ = -55°C
0
0
0.5 1.0
1.5 2.0
2.5 3.0 3.5
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
Qrr, REVERSE RECOVERY CHARGE
(nC)
400
T = 125°C
J
V = 400V
R
350
16A
300
250
8A
200
150
4A
100
50
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
16A
R
12
10
8
6
8A
4
4A
2
20
Duty cycle = 0.5
T = 175°C
18
trr
J
16
trr
IRRM
0.8
T = 125°C
J
V = 400V
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
Qrr
1.0
14
0
14
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to X000A/µs)
1.2
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
IRRM, REVERSE RECOVERY CURRENT
(A)
0
0.6
12
10
8
0.4
Qrr
0.2
6
4
2
0.0
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
0
25
50
75
100
125
150
175
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
50
40
11-2008
30
20
10
0
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
053-4210 Rev G
CJ, JUNCTION CAPACITANCE
(pF)
60
APT8DQ60K_SA(G)
Vr
diF /dt Adjust
+18V
APT6038BLL
0V
D.U.T.
30μH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
0.25 IRRM
3
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-263 D2 (SA) Package Outline
TO-220 (K) Package Outline
e3 100% Sn
Cathode
(Heat Sink)
e3 100% Sn
4.45 (.175)
4.57 (.180)
1.27 (.050)
1.32 (.052)
0.050 (.002)
10.06 (.396)
10.31(.406)
1.40 (.055)
1.65 (.065)
8.51 (.335)
8.76(.345)
7.54 (.297)
7.68 (.303)
6.02 (.237)
6.17 (.243)
0.330 (.013)
0.432 (.017)
0.000 (.000)
0.254 (.010)
2.62 (.103)
2.72 (.107)
053-4210 Rev G
11-2008
1.22 (.048)
1.32 (.052)
{3 Plcs.}
0.762 (.030)
0.864 (.034)
{2 Plcs.}
2.54 (.100) BSC
{2 Plcs.}
3.68 (.145)
6.27 (.247)
(Base of Lead)
Heat Sink (Cathode)
and Leads are Plated
Anode
Cathode
Dimensions in Millimeters (Inches)
Dimensions in Millimeters (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.