Mitsubishi MGFC41V6472 6.4 ~ 7.2ghz band 12w internally matched gaas fet Datasheet

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC41V6472
6.4 ~ 7.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
DESCRIPTION
OUTLINE DRAWING
The MGFC41V6472 is an internally impedance-matched
GaAs power FET especially designed for use in 6.4 ~ 7.2
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
Unit: millimeters (inches)
24+/-0.3
R1.25
0.6+/-0.15
2MIN
FEATURES
(1)
Class A operation
R1.2
Internally matched to 50(ohm) system
(2)
15.8
P1dB = 12W (TYP.) @ f=6.4~7.2GHz
High power gain
8.0+/-0.2
17.4+/-0.3
High output power
GLP = 9 dB (TYP.) @ f=6.4~7.2GHz
High power added efficiency
2MIN
P.A.E. = 32 % (TYP.) @ f=6.4~7.2GHz
(3)
Low distortion [ item -51 ]
IM3= -45 dBc(TYP.) @Po=30dBm S.C.L.
20.4+/-0.2
Thermal Resistance
Rth(ch-c)=- deg.C/W(TYP.)
0.1
2.4+/-0.2
13.4
4.0+/-0.4
APPLICATION
item 01 : 6.4~7.2 GHz band power amplifier
1.4
item 51 : 6.4~7.2 GHz band digital radio communication
(1):GATE
(2):SOURCE(FLANGE)
(3):DRAIN
QUALITY GRADE
IG
GF-18
RECOMMENDED BIAS CONDITIONS
VDS = 10 V
ID = 3.4 A
Refer to Bias Procedure
RG= 50 ohm
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
(Ta=25 deg.C)
Ratings
Unit
V
VGDO
Gate to drain voltage
-15
VGSO
Gate to source voltage
-15
V
ID
Drain current
12
A
IGR
Reverse gate current
-30
mA
IGF
Forward gate current
63
mA
PT
Total power dissipation *1
53.6
W
Tch
Channel temperature
175
deg.C
Tstg
Storage temperature
-65 ~ +175
deg.C
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety
when making your circuit designs, with appropriate measures
such as (1)placement of substitutive, auxiliary circuits, (2)use of
non-flammable material or (3)prevention against any malfunction
or mishap.
*1 : Tc=25 deg.C
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
(Ta=25 deg.C)
Test conditions
Limits
Min.
Typ.
Max.
Unit
IDSS
Saturated drain current
VDS=3V, VGS=0V
-
-
12
gm
Transconductance
VDS=3V, ID=3A
-
3
-
A
S
VGS(off)
Gate to source cut-off voltage
VDS=3V, ID=30mA
-
-
-5
V
40
41
-
dBm
8
9
-
dB
P1dB
Output power at 1dB gain compression
GLP
Linear power gain
ID
Drain current
-
-
-
A
P.A.E.
Power added efficiency
-
32
-
%
-42
-45
VDS=10V, ID(RF off)=3.4A, f=6.4~7.2GHz
IM3
3rd order IM distortion
*1
Rth(ch-c)
Thermal resistance
*2
Delta Vf method
-
2.2
2.8
dBc
deg.C/W
*1 : item -51, 2 tone test, Po=30dBm Single Carrier Level, f=7.2GHz, Delta f=10MHz
*2 : Channel to case
MITSUBISHI
ELECTRIC
Oct-03
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC41V6472
6.4 ~ 7.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
MITSUBISHI
ELECTRIC
Similar pages