HIRECT H30TL Phase control thyristor Datasheet

PHASE CONTROL THYRISTOR H30TB/TLXX
Symbol
Characteristics
Conditions
TJ (0C)
Value
Unit
125
200-1600
V
125
200-1600
V
125
125
125
15
15
600
mA
mA
V/μS
30
A
50
A
500
A
1250
A 2S
BLOCKING PARAMETERS
VRRM
VDRM
IRRM
IDRM
dV/dT
Repetitive peak reverse voltage
Repetitive peak off-stage
voltage
Repetitive peak reverse current
Repetitive peak off-state current
Rep. rate of change of voltage
V = VRRM
V = VRRM
@ 67%VDRM
CONDUCTING PARAMETERS
IF(AV)
Average on-state current
IRMS
RMS on-state current
ITSM
Surge on-state current
I2 t
I2 t
VT
Peak on-state voltage drop
V0
r0
Threshold voltage
On-state slope resistance
di/dt
Repetitive rate of rise of current
180 sine, 50H Z,
TC = 850C
Sine wave, 10mS
without reverse
voltage
125
On-state
current = 100A
125
1.72
V
125
125
0.95
6.40
V
mΩ
125
100
A/μS
25
25
25
25
100
2.50
300
200
mA
V
mA
mA
30
W
12
10
V
A
dIG/dT = 1A/µS
VGK = 1V
TRIGGERING PARAMETERS
IGT
VGT
IL
IH
PG –PEAK
VFGM
IFGM
Gate trigger current
Gate trigger voltage
Latching Current
Holding Current
Maximum Peak Gate Power
VD = 5V
VD = 5V
VD = 5V
Pulse width
100μSec
Maximum forward gate voltage
Maximum forward gate current
THERMAL & MECHANICAL PARAMETERS
R TH (J-C)
RTH (C-HK)
TJ
TSTG
F
W
Thermal impedance, 180
conduction, Sine
Thermal impedance
Maximum Permissible junction
temperature
Storage temperature range
Mounting Torque
Weight
Junction to case
0.93
0
C/W
Case to heatsink
0.30
0
C/W
125
For TB
For TL
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-40 - 125
2
30
15
0
C
C
NM
0
gms
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PHASE CONTROL THYRISTOR H30TB/TLXX
H30TLXX
H30TBXX
All dimensions in mm
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PHASE CONTROL THYRISTOR H30TB/TLXX
Pt(av) - W
On State Power Loss
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
0
120 180
0
60
0
5
10
15
20
25
30
35
40
45
50
It(av) - A
Maximum Permissible Case Temp
140
120
0
Tcase ( C)
100
80
60
40
0
0
120
60
0
180
20
0
0
5
10
15
20
25
30
35
40
45
50
It(av) A
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PHASE CONTROL THYRISTOR H30TB/TLXX
Max non repetitive Surge Current
600
550
500
450
Itsm - A
400
350
300
250
200
150
100
50
0
0.01
0.1
1
10
Time in Sec
Transient Thermal Impedance Junction to Case
1
0.9
0.8
Rth(j-c)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.001
0.01
0.1
1
10
Time in Sec
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PHASE CONTROL THYRISTOR H30TB/TLXX
I t(av) - A
On State Characteristics
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
Vt - V
Gate Trigger Characteristics
100
10
VG(V) - V
VGT
250C
1
PO(tp)
I GT
30 W
(0.1ms
)
I GD
0.1
0.001
0.01
0.1
1
10
100
IG (av ) - A
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PHASE CONTROL THYRISTOR H30TB/TLXX
Ordering Information: H
Hirect make Thyristor
30
IF(AV) = 30A
TB / TL
TB – with a Pigtail
TL – with Lug
XX
VRRM = XX x 100
e.g.12 * 100 =1200V
Hind Rectifiers Ltd reserves the right to change the specifications without
notice.
This datasheet specifies technical information for semiconductor devices but
promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
Hind Rectifiers Ltd
Lake Road
Bhandup (West)
Mumbai – 400 078
Tel: - +91 22 2596 8027/28/29/31
Fax: - +91 22 2596 4114
E-mail: - [email protected]
Website: - www.hirect.com
June-2008
HIND RECTIFIERS LTD
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