BDX53BFP ® SILICON POWER DARLINGTON TRANSISTOR APPLICATIONS: ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING DESCRIPTION The BDX53BFP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in T0-220FP fully molded isolated package. It is intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. 3 1 2 T0-220FP INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO V CEO Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) 80 80 V V V EBO IC I CM Emitter-base Voltage (I C = 0) Collector Current Collector Peak Current (repetitive) 5 8 12 V A A Base Current 0.2 A Total Dissipation at T c ≤ 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature 29 W 1500 V IB P tot Visol T stg Tj Parameter February 2003 -65 to 150 150 o o C C 1/4 BDX53BFP THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 4.3 70 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Max. Unit I CBO Collector Cut-off Current (I E = 0) Parameter V CB = 80 V 0.2 mA I CEO Collector Cut-off Current (I B = 0) V CE = 40 V 0.5 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 2 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) Test Conditions I C = 100 mA Min. Typ. 80 V V CE(sat) ∗ Collector-emitter Saturation Voltage IC = 3 A I B =12 mA 2 V V BE(sat) ∗ Base-emitter Saturation Voltage IC = 3 A I B =12 mA 2.5 V h FE ∗ DC Current Gain IC = 3 A V CE = 3 V VF∗ Parallel Diode Forward I F = 3 A Voltage IF = 8 A 2.5 V V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 2/4 750 1.8 2.5 BDX53BFP TO-220FP MECHANICAL DATA mm DIM. MIN. A 4.4 inch TYP. MAX. MIN. TYP. MAX. 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 L4 3/4 BDX53BFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4