WINNERJOIN MMST3906 Transistor (pnp) Datasheet

RoHS
MMST3906
D
T
,. L
TRANSISTOR (PNP)
SOT-323
1. BASE
2. EMITTER
1. 25¡ À0. 05
PCM:
0.2
1. 01 REF
3. COLLECTOR
W (Tamb=25℃)
2. 30¡ À0. 05
1. 30¡ À0. 03
Collector current
ICM:
-0.2
A
Collector-base voltage
V(BR) CBO:
-40
V
Operating and storage junction temperature range
IC
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
R
T
Collector cut-off current
V(BR)EBO
C
O
2. 00¡ À0. 05
FEATURES
Power dissipation
0. 30
MMST3906
Unit: mm
unless otherwise specified)
Test
O
conditions
N
MIN
MAX
UNIT
Ic= -10µA, IE=0
-40
V
Ic= -1mA, IB=0
-40
V
IE= -10µA, IC=0
-5
V
VCB= -40V, IE=0
-0.1
µA
VCE= -40V, IB=0
-0.1
µA
IEBO
VEB= -5V, IC=0
-0.1
µA
hFE(1)
VCE=- 1V, IC= -10mA
100
hFE(2)
VCE= -1V, IC=- 50mA
60
Collector-emitter saturation voltage
VCE(sat)
IC=-50 mA, IB= -5mA
-0.3
V
Base-emitter saturation voltage
VBE(sat)
IC= -50 mA, IB= -5mA
-0.95
V
ICBO
Collector cut-off current
C
E
L
Emitter cut-off current
DC current gain
J
E
E
ICEO
Transition frequency
fT
Output Capacitance
Cob
W
VCE= -20V, IC= -10mA
f=100MHz
VCB=-5V, IE= 0
f=1MHz
Delay time
td
VCC=-3V, IC=-10mA
Rise time
tr
VBE(off)=-0.5V, IB1=-1mA
Storage time
tS
VCC=-3V, IC=-10mA
Fall time
tf
IB1= IB2= -1mA
Marking
300
300
MHz
4.5
pF
35
nS
35
nS
225
nS
75
nS
K5N
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
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