MM3Z3V3ST1 SERIES Zener Voltage Regulators 200 mW SOD−323 Surface Mount Tight Tolerance Portfolio This series of Zener diodes is packaged in a SOD−323 surface mount package that has a power dissipation of 200 mW. They are designed to provide voltage regulation protection and are especially attractive in situations where space is at a premium. They are well suited for applications such as cellular phones, hand−held portables, and high density PC boards. http://onsemi.com 1 Cathode Specification Features: • • • • • 3.3 V to 36 V Steady State Power Rating of 200 mW Small Body Outline Dimensions: 0.067″ x 0.049″ (1.7 mm x 1.25 mm) Low Body Height: 0.035″ (0.9 mm) Package Weight: 4.507 mg/unit ESD Rating of Class 3 (>16 kV) per Human Body Model Tight Tolerance VZ Pb−Free Packages are Available SOD−323 CASE 477 STYLE 1 XX = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. 260°C for 10 Seconds LEADS: Plated with Pb−Sn or Sn only (Pb−Free) POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 MOUNTING POSITION: Any MAXIMUM RATINGS Rating Thermal Resistance from Junction−to−Ambient Junction and Storage Temperature Range Symbol PD XXMG G 1 Mechanical Characteristics: CASE: Void-free, transfer-molded plastic FINISH: All external surfaces are corrosion resistant MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: Total Device Dissipation FR−5 Board, (Note 1) @ TA = 25°C Derate above 25°C MARKING DIAGRAM 2 • Standard Zener Breakdown Voltage Range − • • 2 Anode ORDERING INFORMATION Device Package Shipping† MM3ZxxxST1 SOD−323 3000/Tape & Reel MM3ZxxxST1G SOD−323 (Pb−Free) 3000/Tape & Reel MM3ZxxxST3 SOD−323 10,000/Tape & Reel MM3ZxxxST3G SOD−323 (Pb−Free) 10,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Max Unit 200 1.5 mW mW/°C DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. RqJA 635 °C/W TJ, Tstg −65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 Minimum Pad. © Semiconductor Components Industries, LLC, 2009 October, 2009 − Rev. 16 1 Publication Order Number: MM3Z2V4ST1/D MM3Z3V3ST1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types) Parameter Symbol VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF QVZ C I IF VZ VR V IR VF IZT Maximum Temperature Coefficient of VZ Zener Voltage Regulator Max. Capacitance @VR = 0 and f = 1 MHz ELECTRICAL CHARACTERISTICS (VF = 0.9 Max @ IF = 10 mA for all types) ZZT IZ = IZT @ 10% Mod W Max mA V Min Max C pF Max @ VR = 0 f = 1 MHz Max IR @ VR dVZ/dt (mV/k) @ IZT1 = 5 mA Min Max ZZK IZ = 0.5 mA W Max 5.0 2.90 3.11 1000 100 10 1.0 −3.5 0 450 T5 5.0 3.32 3.53 1000 95 5.0 1.0 −3.5 0 450 MM3Z3V9ST1, G T7 5.0 3.89 4.16 1000 90 3.0 1.0 −3.5 −2.5 450 MM3Z4V3ST1, G T8 5.0 4.17 4.43 1000 90 3.0 1.0 −3.5 0 450 MM3Z4V7ST1, G T9 5.0 4.55 4.75 800 80 3.0 2.0 −3.5 0.2 260 MM3Z5V1ST1, G TA 5.0 4.98 5.2 500 60 2.0 2.0 −2.7 1.2 225 MM3Z5V6ST1, G TC 5.0 5.49 5.73 200 40 1.0 2.0 −2.0 2.5 200 MM3Z6V2ST1, G TE 5.0 6.06 6.33 100 10 3.0 4.0 0.4 3.7 185 MM3Z6V8ST1, G TF 5.0 6.65 6.93 160 15 2.0 4.0 1.2 4.5 155 MM3Z7V5ST1, G TG 5.0 7.28 7.6 160 15 1.0 5.0 2.5 5.3 140 MM3Z8V2ST1, G TH 5.0 8.02 8.36 160 15 0.7 5.0 3.2 6.2 135 MM3Z9V1ST1, G TK 5.0 8.85 9.23 160 15 0.5 6.0 3.8 7.0 130 MM3Z10VST1, G WB 5.0 9.80 10.20 160 15 0.5 6.0 4.5 8.0 130 MM3Z12VST1, G TN 5.0 11.74 12.24 80 25 0.1 8.0 6.0 10 130 MM3Z15VST1, G TP 5.0 14.34 14.98 80 40 0.1 11 8.8 12.7 130 MM3Z16VST1, G TU 5.0 15.85 16.51 80 40 0.05 11.2 10.4 14 105 MM3Z18VST1, G TW 5.0 17.56 18.35 80 45 0.05 12.6 12.4 16 100 MM3Z22VST1G WP 5.0 21.54 22.47 100 55 0.05 15.4 16.4 20 85 MM3Z24VST1G WT 5.0 23.72 24.78 120 70 0.05 16.8 18.4 22 80 MM3Z27VST1G WQ 5.0 26.19 27.53 300 80 0.05 18.9 21.4 25.3 70 MM3Z33VST1G WR 5.0 32.15 33.79 300 80 0.05 23.2 27.4 33.4 70 MM3Z36VST1G WU 5.0 35.07 36.87 500 90 0.05 25.2 30.4 37.4 70 Device Marking Test Current Izt mA MM3Z3V0ST1, G T4 MM3Z3V3ST1, G Device* Zener Voltage VZ *The “G’’ suffix indicates Pb−Free package available. http://onsemi.com 2 MM3Z3V3ST1 SERIES TYPICAL CHARACTERISTICS 1000 TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT , DYNAMIC IMPEDANCE ( Ω ) 1000 100 100 IZ = 1 mA 10 5 mA 1.0 3.0 75°C 1.0 10 150°C 10 0.4 0.5 1.1 0 V BIAS 1 V BIAS 100 BIAS AT 50% OF VZ NOM 10 IR, LEAKAGE CURRENT ( μ A) 1000 TA = 25°C 100 10 1.0 +150°C 0.1 0.01 + 25°C 0.001 −55°C 0.0001 1.0 1.2 Figure 2. Typical Forward Voltage 1000 C, CAPACITANCE (pF) 0°C 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE Figure 1. Effect of Zener Voltage on Zener Impedance 25°C 4.0 10 0.00001 VZ, NOMINAL ZENER VOLTAGE (V) 5.0 VZ, NOMINAL ZENER VOLTAGE (V) Figure 3. Typical Capacitance Figure 4. Typical Leakage Current 100 0 10 100 80 10 POWER DISSIPATION (%) I Z , ZENER CURRENT (mA) TA = 25°C 1.0 0.1 0.01 0 2.0 4.0 6.0 VZ, ZENER VOLTAGE (V) 8.0 10 60 40 20 0 0 25 50 75 100 TEMPERATURE (°C) 125 Figure 6. Steady State Power Derating Figure 5. Zener Voltage versus Zener Current (VZ Up to 9 V) http://onsemi.com 3 150 MM3Z3V3ST1 SERIES PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L A1 NOTE 5 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE 2. ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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