SPANSION AM29LV320MT90REC 32 megabit (2 m x 16-bit/4 m x 8-bit) mirrorbitâ ¢ 3.0 volt-only boot sector flash memory Datasheet

Am29LV320MT/B
Data Sheet
RETIRED
PRODUCT
This product has been retired and is not available for designs. For new and current designs,
S29GL032A supersedes Am29LV320MT/B and is the factory-recommended migration path. Please
refer to the S29GL032A datasheet for specifications and ordering information. Availability of this
document is retained for reference and historical purposes only.
The following document contains information on Spansion memory products. Although the document is marked with the name of the company that originally developed the specification, Spansion
will continue to offer these products to existing customers.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal data sheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appro and
changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
Spansion continues to support existing part numbers beginning with “Am” and “MBM”. To order these
products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number 26518 Revision C
Amendment 3 Issue Date January 31, 2007
THIS PAGE LEFT INTENTIONALLY BLANK.
DATA SHEET
Am29LV320MT/B
32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit™
3.0 Volt-only Boot Sector Flash Memory
This product has been retired and is not available for designs. For new and current designs, S29GL032A supersedes Am29LV320MT/B and is the factory-recommended migration path.
Please refer to the S29GL032A datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Single power supply operation
— 3 V for read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBit process
technology
■ Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
■ Flexible sector architecture
— Sixty-three 32 Kword/64-Kbyte sectors
— Eight 4 Kword/8 Kbyte boot sectors
■ Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
■ Minimum 100,000 erase cycle guarantee per sector
■ 20-year data retention at 125°C
PERFORMANCE CHARACTERISTICS
■ High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 15 µs typical effective write buffer word programming
time: 16-word/32-byte write buffer reduces overall
programming time for multiple-word/byte updates
— 4-word/8-byte page read buffer
— 16-word/32-byte write buffer
■ Low power consumption (typical values at 3.0 V, 5
MHz)
— 13 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
■ Package options
— 48-pin TSOP
— 48-ball Fine-pitch BGA
— 64-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
■ Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
■ Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: VID-level method of
changing code in locked sectors
— WP#/ACC input:
Write Protect input (WP#) protects top or bottom two
sectors regardless of sector protection settings
ACC (high voltage) accelerates programming time for
higher throughput during system production
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) indicates program or
erase cycle completion
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 26518 Rev: C Amendment/3
Issue Date: January 31, 2007
D A T A
S H E E T
GENERAL DESCRIPTION
The Am29LV320M/TB is a 32 Mbit, 3.0 volt single
power supply flash memory device organized as
2,097,152 words or 4,194,304 bytes. The device has
an 8-bit/16-bit bus and can be programmed either in
the host system or in standard EPROM programmers.
An access time of 90, 100, 110, or 120 ns is available.
Note that each access time has a specific operating
voltage range (VCC) and an I/O voltage range (VIO), as
specified in the Product Selector Guide and the Ordering Information sections. The device is offered in a
48-pin TSOP, 48-ball Fine-pitch BGA or 64-ball Fortified BGA package. Each device has separate chip enable (CE#), write enable (WE#) and output enable
(OE#) controls.
Each device requires only a single 3.0 volt power
supply for both read and write functions. In addition to
a V CC input, a high-voltage accelerated program
(ACC) function provides shorter programming times
through increased current on the WP#/ACC input. This
feature is intended to facilitate factory throughput during system production, but may also be used in the
field if desired.
The device is entirely command set compatible with
the JEDEC single-power-supply Flash standard.
Commands are written to the device using standard
microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Device programming and erasure are initiated through
command sequences. Once a program or erase operation has begun, the host system need only poll the
DQ7 (Data# Polling) or DQ6 (toggle) status bits or
monitor the Ready/Busy# (RY/BY#) output to determine whether the operation is complete. To facilitate
programming, an Unlock Bypass mode reduces command sequence overhead by requiring only two write
cycles to program data instead of four.
2
Hardware data protection measures include a low
VCC detector that automatically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of sectors of memory.
This can be achieved in-system or via programming
equipment.
The Erase Suspend/Erase Resume feature allows
the host system to pause an erase operation in a given
sector to read or program any other sector and then
complete the erase operation. The Program Suspend/Program Resume feature enables the host system to pause a program operation in a given sector to
read any other sector and then complete the program
operation.
The hardware RESET# pin terminates any operation
in progress and resets the device, after which it is then
ready for a new operation. The RESET# pin may be
tied to the system reset circuitry. A system reset would
thus also reset the device, enabling the host system to
read boot-up firmware from the Flash memory device.
The device reduces power consumption in the
standby mode when it detects specific voltage levels
on CE# and RESET#, or when addresses have been
stable for a specified period of time.
The Write Protect (WP#) feature protects the top or
bottom two sectors by asserting a logic low on the
WP#/ACC pin. The protected sector will still be protected even during accelerated programming.
The Secured Silicon Sector provides a
128-word/256-byte area for code or data that can be
permanently protected. Once this sector is protected,
no further changes within the sector can occur.
AMD MirrorBit flash technology combines years of
Flash memory manufacturing experience to produce
the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a
sector simultaneously via hot-hole assisted erase. The
data is programmed using hot electron injection.
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
MIRRORBIT 32 MBIT DEVICE FAMILY
Device
Sector Architecture
Packages
VIO
RY/BY#
WP#, ACC
WP# Protection
x8
Uniform (64 Kbyte)
40-pin TSOP (std. & rev. pinout),
48-ball FBGA
Yes
Yes
ACC only
No WP#
LV320MT/B
x8/x16
Boot (8 x 8 Kbyte
at top & bottom)
48-pin TSOP, 48-ball Fine-pitch BGA,
64-ball Fortified BGA
No
Yes
WP#/ACC pin
2 x 8 Kbyte
top or bottom
LV320MH/L
x8/x16
Uniform (64 Kbyte)
56-pin TSOP (std. & rev. pinout),
64-ball Fortified BGA
Yes
Yes
WP#/ACC pin
1 x 64 Kbyte
high or low
LV033MU
Bus
RELATED DOCUMENTS
More information on MirrorBit technology and products, and other documents relating to this device such
as white papers, application notes, simulation models,
a n d FAQ s a r e a v a i l a b l e v i a t h e i n t e r n e t a t
26518C3 January 31, 2007
www.amd.com. Type or paste in the following URL in a
web browser:
http://www.amd.com/us-en/FlashMemory/ProductInformation/0,37_1447_2248,00.html.
Am29LV320MT/B
3
D A T A
S H E E T
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 5
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 6
Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 9
Device Bus Operations . . . . . . . . . . . . . . . . . . . . 11
Table 1. Device Bus Operations .....................................................11
Requirements for Reading Array Data ................................... 11
Writing Commands/Command Sequences ............................ 12
Automatic Sleep Mode ........................................................... 13
RESET#: Hardware Reset Pin ............................................... 13
Output Disable Mode .............................................................. 13
Table 2. Am29LV320MT Top Boot Sector Architecture ..................13
Table 3. Am29LV320MB Bottom Boot Sector Architecture .............15
Table 4. Autoselect Codes, (High Voltage Method) .......................17
Sector Group Protection and Unprotection ............................. 18
Table 5. Am29LV320MT Top Boot Sector Protection .....................18
Table 6. Am29LV320MB Bottom Boot Sector Protection ................18
Reading Toggle Bits DQ6/DQ2 ............................................... 37
DQ5: Exceeded Timing Limits ................................................ 38
DQ3: Sector Erase Timer ....................................................... 38
DQ1: Write-to-Buffer Abort ..................................................... 38
Table 14. Write Operation Status ................................................... 38
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 39
Figure 10. Maximum Negative Overshoot Waveform ................... 39
Figure 11. Maximum Positive Overshoot Waveform..................... 39
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 40
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 12. Test Setup.................................................................... 41
Table 15. Test Specifications ......................................................... 41
Key to Switching Waveforms. . . . . . . . . . . . . . . . 41
Figure 13. Input Waveforms and
Measurement Levels...................................................................... 41
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 42
Read-Only Operations ........................................................... 42
Figure 14. Read Operation Timings ............................................... 42
Figure 15. Page Read Timings ...................................................... 43
Write Protect (WP#) ................................................................ 18
Temporary Sector Group Unprotect ....................................... 19
Hardware Reset (RESET#) .................................................... 44
Figure 1. Temporary Sector Group Unprotect Operation................ 19
Figure 2. In-System Sector Group Protect/Unprotect Algorithms ... 20
Erase and Program Operations .............................................. 45
Secured Silicon Sector Flash Memory Region ....................... 21
Table 7. Secured Silicon Sector Contents ......................................21
Figure 3. Secured Silicon Sector Protect Verify .............................. 22
Hardware Data Protection ...................................................... 22
Common Flash Memory Interface (CFI) . . . . . . . 22
Command Definitions . . . . . . . . . . . . . . . . . . . . . 25
Reading Array Data ................................................................ 25
Reset Command ..................................................................... 26
Autoselect Command Sequence ............................................ 26
Enter Secured Silicon Sector/Exit Secured Silicon Sector
Command Sequence .............................................................. 26
Word/Byte Program Command Sequence ............................. 27
Figure 4. Write Buffer Programming Operation............................... 29
Figure 5. Program Operation .......................................................... 30
Program Suspend/Program Resume Command Sequence ... 30
Figure 6. Program Suspend/Program Resume............................... 31
Chip Erase Command Sequence ........................................... 31
Sector Erase Command Sequence ........................................ 31
Figure 7. Erase Operation............................................................... 32
Erase Suspend/Erase Resume Commands ........................... 32
Write Operation Status . . . . . . . . . . . . . . . . . . . . 35
DQ7: Data# Polling ................................................................. 35
Figure 8. Data# Polling Algorithm ................................................... 35
DQ6: Toggle Bit I .................................................................... 36
Figure 16. Reset Timings ............................................................... 44
Figure 17. Program Operation Timings..........................................
Figure 18. Accelerated Program Timing Diagram..........................
Figure 19. Chip/Sector Erase Operation Timings ..........................
Figure 20. Data# Polling Timings (During Embedded Algorithms).
Figure 21. Toggle Bit Timings (During Embedded Algorithms)......
Figure 22. DQ2 vs. DQ6.................................................................
46
46
47
48
49
49
Temporary Sector Unprotect .................................................. 50
Figure 23. Temporary Sector Group Unprotect Timing Diagram ... 50
Figure 24. Sector Group Protect and Unprotect Timing Diagram .. 51
Alternate CE# Controlled Erase and Program Operations ..... 52
Figure 25. Alternate CE# Controlled Write (Erase/Program)
Operation Timings.......................................................................... 53
Erase And Programming Performance. . . . . . . . 54
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 54
TSOP Pin and BGA Package Capacitance . . . . . 55
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 56
TS 048—48-Pin Standard Pinout Thin Small Outline Package
(TSOP) ................................................................................... 56
FBC048—48-Ball Fine-pitch Ball Grid Array (BGA)
9 x 8 mm Package .................................................................. 57
LAA064—64-Ball Fortified Ball Grid Array (BGA)
13 x 11 mm Package .............................................................. 58
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 59
Figure 9. Toggle Bit Algorithm......................................................... 37
DQ2: Toggle Bit II ................................................................... 37
4
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
PRODUCT SELECTOR GUIDE
Part Number
Speed Option
Am29LV320MT/B
VCC = 3.0–3.6 V
90R
95R
VCC = 2.7–3.6 V
100R
110R
120R
100
110
120
Max. Access Time (ns)
90
95
100
110
120
Max. CE# Access Time (ns)
90
95
100
110
120
Max. Page access time (tPACC)
25
30
30
30
40
30
40
Max. OE# Access Time (ns)
25
30
30
30
40
30
40
Note: See AC Characteristics for full specifications.
BLOCK DIAGRAM
DQ0–DQ15 (A-1)
RY/BY#
VCC
Sector Switches
VSS
Erase Voltage
Generator
Input/Output
Buffers
RESET#
WE#
State
Control
WP#/ACC
BYTE#
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
VCC Detector
Timer
A20–A0
26518C3 January 31, 2007
Am29LV320MT/B
Address Latch
STB
STB
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
5
D A T A
S H E E T
CONNECTION DIAGRAMS
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RESET#
NC
WP#/ACC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
48-Pin Standard TSOP
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
48-ball Fine-pitch BGA
Top View, Balls Facing Down
A6
B6
D6
E6
F6
G6
BYTE# DQ15/A-1
H6
VSS
A13
A12
A14
A15
A16
A5
B5
C5
D5
E5
F5
G5
H5
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A4
B4
C4
D4
E4
F4
G4
H4
WE#
RESET#
NC
A19
DQ5
DQ12
VCC
DQ4
A3
B3
RY/BY# WP#/ACC
C3
D3
E3
F3
G3
H3
A18
A20
DQ2
DQ10
DQ11
DQ3
A2
B2
C2
D2
E2
F2
G2
H2
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A1
B1
C1
D1
E1
F1
G1
H1
OE#
VSS
A3
6
C6
A4
A2
A1
A0
Am29LV320MT/B
CE#
26518C3 January 31, 2007
D A T A
S H E E T
CONNECTION DIAGRAMS
64-Ball Fortified BGA
Top View, Balls Facing Down
A8
B8
C8
D8
E8
F8
G8
H8
NC
NC
NC
NC
VSS
NC
NC
NC
A7
B7
C7
D7
E7
F7
G7
H7
A13
A12
A14
A15
A16
A6
B6
C6
D6
E6
BYTE# DQ15/A-1
F6
VSS
G6
H6
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A5
B5
C5
D5
E5
F5
G5
H5
WE#
RESET#
NC
A19
DQ5
DQ12
VCC
DQ4
A4
B4
C4
D4
E4
F4
G4
H4
A18
A20
DQ2
DQ10
DQ11
DQ3
RY/BY# WP#/ACC
A3
B3
C3
D3
E3
F3
G3
H3
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A2
B2
C2
D2
E2
F2
G2
H2
A3
A4
A2
A1
A0
CE#
OE#
VSS
A1
B1
C1
D1
E1
F1
G1
H1
NC
NC
NC
NC
NC
NC
NC
NC
Special Package Handling Instructions
Special handling is required for Flash Memory products
in molded packages (TSOP and BGA). The package
26518C3 January 31, 2007
and/or data integrity may be compromised if the
package body is exposed to temperatures above 150°C
for prolonged periods of time.
Am29LV320MT/B
7
D A T A
PIN DESCRIPTION
A20–A0
S H E E T
LOGIC SYMBOL
= 21 Address inputs
21
DQ14–DQ0 = 15 Data inputs/outputs
A20–A0
DQ15/A-1
= DQ15 (Data input/output, word mode),
A-1 (LSB Address input, byte mode)
CE#
CE#
= Chip Enable input
OE#
OE#
= Output Enable input
WE#
WE#
= Write Enable input
WP#/ACC
WP#/ACC
= Hardware Write Protect input/Programming Acceleration input
RESET#
RESET#
= Hardware Reset Pin input
RY/BY#
= Ready/Busy output
BYTE#
= Selects 8-bit or 16-bit mode
VCC
= 3.0 volt-only single power supply
(see Product Selector Guide for
speed options and voltage
supply tolerances)
VSS
= Device Ground
NC
= Pin Not Connected Internally
8
Am29LV320MT/B
BYTE#
16 or 8
DQ15–DQ0
(A-1)
RY/BY#
26518C3 January 31, 2007
D A T A
S H E E T
ORDERING INFORMATION
Standard Products in TSOP Packages
The order number (Valid Combination) for products in TSOP packages is formed by the following designators:
Am29LV320M
T
120R
E
I
TEMPERATURE RANGE
C
= Commercial (0°C to +70°C)
I
= Industrial (–40°C to +85°C)
PACKAGE TYPE
E
= 48-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 048)
SPEED OPTION
See Product Selector Guide and Valid Combinations
SECTOR ARCHITECTURE AND WP# PROTECTION (WP# = VIL)
T
= Top boot sector device, top two address sectors protected
B
= Bottom boot sector device, bottom two address sectors protected
DEVICE NUMBER/DESCRIPTION
Am29LV320MT/B
32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit™ Boot Sector Flash Memory
3.0 Volt-only Read, Program, and Erase
Valid Combinations
Valid Combinations for
TSOP Package
Am29LV320MT90R,
Am29LV320MB90R
EC,
EI
Am29LV320MT95R,
Am29LV320MB95R
Am29LV320MT100R,
Am29LV320MB100R
Am29LV320MT110R,
Am29LV320MB110R
Am29LV320MT120R,
Am29LV320MB120R
EI
Am29LV320MT100,
Am29LV320MB100
Am29LV320MT110,
Am29LV320MB110
Am29LV320MT120,
Am29LV320MB120
26518C3 January 31, 2007
Speed
(ns)
VCC
Range
90
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm
availability of specific valid combinations and to check on newly released combinations.
95
100
3.0–3.6 V
110
120
100
110
2.7–3.6 V
120
Am29LV320MT/B
9
D A T A
S H E E T
ORDERING INFORMATION
Standard Products in BGA Packages
The order number (Valid Combination) for products in BGA packages is formed by the following designators:
Am29LV320M
T
120R
PC
I
TEMPERATURE RANGE
C
= Commercial (0°C to +70°C)
I
= Industrial (–40°C to +85°C)
PACKAGE TYPE
PC = 64-Ball Fortified Ball Grid Array (FBGA),
1.0 mm pitch, 13 x 11 mm package (LAA064)
WC = 48-Ball Fine Pitch Ball Grid Array (FBGA),
0.80 mm pitch, 9 x 8 mm package (FBC048)
SPEED OPTION
See Product Selector Guide and Valid Combinations
SECTOR ARCHITECTURE AND WP# PROTECTION (WP# = VIL)
T
= Top boot sector device, top two address sectors protected
B
= Bottom boot sector device, bottom two address sectors protected
DEVICE NUMBER/DESCRIPTION
Am29LV320MT/B
32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit™ Boot Sector Flash Memory
3.0 Volt-only Read, Program, and Erase
Valid Combinations for
BGA Packages
Package
Marking
Order Number
Am29LV320MT95R
Am29LV320MB95R
Am29LV320MT90R
WCC,
WCI
WCC,
WCI
PCI
Am29LV320MB90R
Am29LV320MT100R
Am29LV320MB100R
Am29LV320MT110R
Am29LV320MB110R
Am29LV320MT120R
Am29LV320MB120R
10
WCC,
WCI
L320MT95QC,
L320MT95QI
L320MB95QC,
L320MB95QI
Speed
(ns)
VCC
Range
L320MB90QC,
L320MB90QI
PCI
L320MB10NI
WCI
L320MT10QI
PCI
L320MT10NI
WCI
L320MB10QI
PCI
L320MB10NI
WCI
L320MT11QI
PCI
L320MT11NI
WCI
L320MB11QI
PCI
L320MB11NI
WCI
L320MT12QI
PCI
L320MT12NI
WCI
L320MB12QI
PCI
L320MB12NI
Order Number
Am29LV320MT100
95
3.0–
3.6 V
L320MT90QC,
L320MT90QI
L320MT90NI
Valid Combinations for
BGA Packages
Am29LV320MB100
Am29LV320MT110
90
3.0–
3.6 V
Am29LV320MB110
Am29LV320MT120
100
3.0–
3.6 V
Am29LV320MB120
Package Marking
WCI
Speed
(ns)
VCC
Range
L320MT10UI
PCI
L320MT10PI
WCI
L320MB10UI
PCI
L320MB10PI
WCI
L320MT11UI
PCI
L320MT11PI
WCI
L320MB11UI
PCI
L320MB11PI
WCI
L320MT12UI
PCI
L320MT12PI
WCI
L320MB12UI
PCI
L320MB12PI
100
110
2.7–
3.6 V
120
Valid Combinations
110
3.0–
3.6 V
120
3.0–
3.6 V
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm
availability of specific valid combinations and to check on newly released combinations.
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
DEVICE BUS OPERATIONS
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information
needed to execute the command. The contents of the
Table 1.
Device Bus Operations
DQ8–DQ15
CE#
OE#
WE#
RESET#
WP#
ACC
Addresses
(Note 2)
DQ0–
DQ7
BYTE#
= VIH
Read
L
L
H
H
X
L/H
AIN
DOUT
DOUT
Write (Program/Erase)
L
H
L
H
(Note 3)
L/H
AIN
(Note 4) (Note 4)
Accelerated Program
L
H
L
H
(Note 3)
VHH
AIN
(Note 4) (Note 4)
VCC ±
0.3 V
X
X
VCC ±
0.3 V
X
H
X
High-Z
High-Z
High-Z
Output Disable
L
H
H
H
X
L/H
X
High-Z
High-Z
High-Z
Reset
X
X
X
L
X
L/H
X
High-Z
High-Z
High-Z
Sector Group Protect
(Note 2)
L
H
L
VID
H
L/H
SA, A6 =L,
A3=L, A2=L,
A1=H, A0=L
(Note 4)
X
X
Sector Group Unprotect
(Note 2)
L
H
L
VID
H
L/H
SA, A6=H,
A3=L, A2=L,
A1=H, A0=L
(Note 4)
X
X
Temporary Sector Group
Unprotect
X
X
X
VID
H
L/H
AIN
Operation
Standby
(Note 4) (Note 4)
BYTE#
= VIL
DQ8–DQ14
= High-Z,
DQ15 = A-1
High-Z
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 11.5–12.5 V, X = Don’t Care, SA = Sector Address,
AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A20:A0 in word mode; A20:A-1 in byte mode. Sector addresses are A20:A12 in both modes.
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the Sector Group
Protection and Unprotection section.
3. If WP# = VIL, the first or last sector remains protected. If WP# = VIH, the top two or bottom two sectors will be protected or
unprotected as determined by the method described in Sector Group Protection and Unprotection. All sectors are unprotected
when shipped from the factory (The Secured Silicon Sector may be factory protected depending on version ordered.)
4. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm (see Figure 2).
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O
pins operate in the byte or word configuration. If the
BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ0–DQ15 are active and controlled by
CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 are
active and controlled by CE# and OE#. The data I/O
26518C3 January 31, 2007
pins DQ8–DQ14 are tri-stated, and the DQ15 pin is
used as an input for the LSB (A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output control and gates array data to the output pins. WE#
should remain at VIH.
Am29LV320MT/B
11
D A T A
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No command is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. The device remains
enabled for read access until the command register
contents are altered.
See Reading Array Data for more information. Refer to
the AC Read-Only Operations table for timing specifications and to Figure 14 for the timing diagram. Refer
to the DC Characteristics table for the active current
specification on reading array data.
Page Mode Read
The device is capable of fast page mode read and is
compatible with the page mode Mask ROM read operation. This mode provides faster read access speed
for random locations within a page. The page size of
the device is 4 words/8 bytes. The appropriate page is
selected by the higher address bits A(max)–A2. Address bits A1–A0 in word mode (A1–A-1 in byte mode)
determine the specific word within a page. This is an
asynchronous operation; the microprocessor supplies
the specific word location.
The random or initial page access is equal to tACC or
tCE and subsequent page read accesses (as long as
the locations specified by the microprocessor falls
within that page) is equivalent to tPACC. When CE# is
deasserted and reasserted for a subsequent access,
the access time is t ACC or t CE . Fast page mode accesses are obtained by keeping the “read-page addresses” constant and changing the “intra-read page”
addresses.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. The
Word/Byte Program Command Sequence section has
details on programming data to the device using both
standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Tables 3 and 2 indicates the
address space that each sector occupies.
Refer to the DC Characteristics table for the active
current specification for the write mode. The AC Char-
12
S H E E T
acteristics section contains timing specification tables
and timing diagrams for write operations.
Write Buffer
Write Buffer Programming allows the system to write a
maximum of 16 words/32 bytes in one programming
operation. This results in faster effective programming
time than the standard programming algorithms. See
Write Buffer for more information.
Accelerated Program Operation
The device offers accelerated program operations
through the ACC function. This is one of two functions
provided by the WP#/ACC pin. This function is primarily intended to allow faster manufacturing throughput
at the factory.
If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors,
and uses the higher voltage on the pin to reduce the
time required for program operations. The system
would use a two-cycle program command sequence
as required by the Unlock Bypass mode. Removing
VHH from the WP#/ACC pin returns the device to normal operation. Note that the WP#/ACC pin must not be
at VHH for operations other than accelerated programming, or device damage may result. In addition, no external pullup is necessary since the WP#/ACC pin has
internal pullup to VCC.
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in
this mode. Refer to the Autoselect Mode and Autoselect Command Sequence sections for more information.
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at VCC ± 0.3 V.
(Note that this is a more restricted voltage range than
VIH.) If CE# and RESET# are held at VIH, but not within
VCC ± 0.3 V, the device will be in the standby mode,
but the standby current will be greater. The device requires standard access time (t CE ) for read access
when the device is in either of these standby modes,
before it is ready to read data.
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
Refer to the DC Characteristics table for the standby
current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for t ACC +
30 ns. The automatic sleep mode is independent of
the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output
data is latched and always available to the system.
Refer to the DC Characteristics table for the automatic
sleep mode current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
Table 2.
S H E E T
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is
ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS±0.3 V, the device
draws CMOS standby current (ICC4). If RESET# is held
at VIL but not within VSS±0.3 V, the standby current will
be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory.
Refer to the AC Characteristics tables for RESET# parameters and to Figure 16 for the timing diagram.
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in the high
impedance state.
Am29LV320MT Top Boot Sector Architecture
Sector
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
SA0
000000xxx
64/32
000000h–00FFFFh
00000h–07FFFh
SA1
000001xxx
64/32
010000h–01FFFFh
08000h–0FFFFh
SA2
000010xxx
64/32
020000h–02FFFFh
10000h–17FFFh
SA3
000011xxx
64/32
030000h–03FFFFh
18000h–1FFFFh
SA4
000100xxx
64/32
040000h–04FFFFh
20000h–27FFFh
SA5
000101xxx
64/32
050000h–05FFFFh
28000h–2FFFFh
SA6
000110xxx
64/32
060000h–06FFFFh
30000h–37FFFh
SA7
000111xxx
64/32
070000h–07FFFFh
38000h–3FFFFh
SA8
001000xxx
64/32
080000h–08FFFFh
40000h–47FFFh
SA9
001001xxx
64/32
090000h–09FFFFh
48000h–4FFFFh
SA10
001010xxx
64/32
0A0000h–0AFFFFh
50000h–57FFFh
SA11
001011xxx
64/32
0B0000h–0BFFFFh
58000h–5FFFFh
SA12
001100xxx
64/32
0C0000h–0CFFFFh
60000h–67FFFh
SA13
001101xxx
64/32
0D0000h–0DFFFFh
68000h–6FFFFh
SA14
001101xxx
64/32
0E0000h–0EFFFFh
70000h–77FFFh
SA15
001111xxx
64/32
0F0000h–0FFFFFh
78000h–7FFFFh
SA16
010000xxx
64/32
100000h–00FFFFh
80000h–87FFFh
SA17
010001xxx
64/32
110000h–11FFFFh
88000h–8FFFFh
SA18
010010xxx
64/32
120000h–12FFFFh
90000h–97FFFh
SA19
010011xxx
64/32
130000h–13FFFFh
98000h–9FFFFh
SA20
010100xxx
64/32
140000h–14FFFFh
A0000h–A7FFFh
SA21
010101xxx
64/32
150000h–15FFFFh
A8000h–AFFFFh
SA22
010110xxx
64/32
160000h–16FFFFh
B0000h–B7FFFh
SA23
010111xxx
64/32
170000h–17FFFFh
B8000h–BFFFFh
SA24
011000xxx
64/32
180000h–18FFFFh
C0000h–C7FFFh
SA25
011001xxx
64/32
190000h–19FFFFh
C8000h–CFFFFh
SA26
011010xxx
64/32
1A0000h–1AFFFFh
D0000h–D7FFFh
SA27
011011xxx
64/32
1B0000h–1BFFFFh
D8000h–DFFFFh
26518C3 January 31, 2007
Am29LV320MT/B
13
D A T A
S H E E T
Table 2. Am29LV320MT Top Boot Sector Architecture (Continued)
Sector
14
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
SA28
011000xxx
64/32
1C0000h–1CFFFFh
E0000h–E7FFFh
SA29
011101xxx
64/32
1D0000h–1DFFFFh
E8000h–EFFFFh
SA30
011110xxx
64/32
1E0000h–1EFFFFh
F0000h–F7FFFh
SA31
011111xxx
64/32
1F0000h–1FFFFFh
F8000h–FFFFFh
SA32
100000xxx
64/32
200000h–20FFFFh
F9000h–107FFFh
SA33
100001xxx
64/32
210000h–21FFFFh
108000h–10FFFFh
SA34
100010xxx
64/32
220000h–22FFFFh
110000h–117FFFh
SA35
101011xxx
64/32
230000h–23FFFFh
118000h–11FFFFh
SA36
100100xxx
64/32
240000h–24FFFFh
120000h–127FFFh
SA37
100101xxx
64/32
250000h–25FFFFh
128000h–12FFFFh
SA38
100110xxx
64/32
260000h–26FFFFh
130000h–137FFFh
SA39
100111xxx
64/32
270000h–27FFFFh
138000h–13FFFFh
SA40
101000xxx
64/32
280000h–28FFFFh
140000h–147FFFh
SA41
101001xxx
64/32
290000h–29FFFFh
148000h–14FFFFh
SA42
101010xxx
64/32
2A0000h–2AFFFFh
150000h–157FFFh
SA43
101011xxx
64/32
2B0000h–2BFFFFh
158000h–15FFFFh
SA44
101100xxx
64/32
2C0000h–2CFFFFh
160000h–167FFFh
SA45
101101xxx
64/32
2D0000h–2DFFFFh
168000h–16FFFFh
SA46
101110xxx
64/32
2E0000h–2EFFFFh
170000h–177FFFh
SA47
101111xxx
64/32
2F0000h–2FFFFFh
178000h–17FFFFh
SA48
110000xxx
64/32
300000h–30FFFFh
180000h–187FFFh
SA49
110001xxx
64/32
310000h–31FFFFh
188000h–18FFFFh
SA50
110010xxx
64/32
320000h–32FFFFh
190000h–197FFFh
SA51
110011xxx
64/32
330000h–33FFFFh
198000h–19FFFFh
SA52
100100xxx
64/32
340000h–34FFFFh
1A0000h–1A7FFFh
SA53
110101xxx
64/32
350000h–35FFFFh
1A8000h–1AFFFFh
SA54
110110xxx
64/32
360000h–36FFFFh
1B0000h–1B7FFFh
SA55
110111xxx
64/32
370000h–37FFFFh
1B8000h–1BFFFFh
SA56
111000xxx
64/32
380000h–38FFFFh
1C0000h–1C7FFFh
SA57
111001xxx
64/32
390000h–39FFFFh
1C8000h–1CFFFFh
SA58
111010xxx
64/32
3A0000h–3AFFFFh
1D0000h–1D7FFFh
SA59
111011xxx
64/32
3B0000h–3BFFFFh
1D8000h–1DFFFFh
SA60
111100xxx
64/32
3C0000h–3CFFFFh
1E0000h–1E7FFFh
SA61
111101xxx
64/32
3D0000h–3DFFFFh
1E8000h–1EFFFFh
SA62
111110xxx
64/32
3E0000h–3EFFFFh
1F0000h–1F7FFFh
SA63
111111000
8/4
3F0000h–3F1FFFh
1F8000h–1F8FFFh
SA64
111111001
8/4
3F2000h–3F3FFFh
1F9000h–1F9FFFh
SA65
111111010
8/4
3F4000h–3F5FFFh
1FA000h–1FAFFFh
SA66
111111011
8/4
3F6000h–3F7FFFh
1FB000h–1FBFFFh
SA67
111111100
8/4
3F8000h–3F9FFFh
1FC000h–1FCFFFh
SA68
111111101
8/4
3FA000h–3FBFFFh
1FD000h–1FDFFFh
SA69
111111110
8/4
3FC000h–3FDFFFh
1FE000h–1FEFFFh
SA70
111111111
8/4
3FE000h–3FFFFFh
1FF000h–1FFFFFh
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
Table 3. Am29LV320MB Bottom Boot Sector Architecture
Sector
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
SA0
000000000
8/4
000000h–001FFFh
00000h–00FFFh
SA1
000000001
8/4
002000h–003FFFh
01000h–01FFFh
SA2
000000010
8/4
004000h–005FFFh
02000h–02FFFh
SA3
000000011
8/4
006000h–007FFFh
03000h–03FFFh
SA4
000000100
8/4
008000h–009FFFh
04000h–04FFFh
SA5
000000101
8/4
00A000h–00BFFFh
05000h–05FFFh
SA6
000000110
8/4
00C000h–00DFFFh
06000h–06FFFh
SA7
000000111
8/4
00E000h–00FFFFFh
07000h–07FFFh
08000h–0FFFFh
SA8
000001xxx
64/32
010000h–01FFFFh
SA9
000010xxx
64/32
020000h–02FFFFh
10000h–17FFFh
SA10
000011xxx
64/32
030000h–03FFFFh
18000h–1FFFFh
SA11
000100xxx
64/32
040000h–04FFFFh
20000h–27FFFh
SA12
000101xxx
64/32
050000h–05FFFFh
28000h–2FFFFh
SA13
000110xxx
64/32
060000h–06FFFFh
30000h–37FFFh
SA14
000111xxx
64/32
070000h–07FFFFh
38000h–3FFFFh
SA15
001000xxx
64/32
080000h–08FFFFh
40000h–47FFFh
SA16
001001xxx
64/32
090000h–09FFFFh
48000h–4FFFFh
SA17
001010xxx
64/32
0A0000h–0AFFFFh
50000h–57FFFh
SA18
001011xxx
64/32
0B0000h–0BFFFFh
58000h–5FFFFh
SA19
001100xxx
64/32
0C0000h–0CFFFFh
60000h–67FFFh
SA20
001101xxx
64/32
0D0000h–0DFFFFh
68000h–6FFFFh
SA21
001101xxx
64/32
0E0000h–0EFFFFh
70000h–77FFFh
SA22
001111xxx
64/32
0F0000h–0FFFFFh
78000h–7FFFFh
SA23
010000xxx
64/32
100000h–00FFFFh
80000h–87FFFh
SA24
010001xxx
64/32
110000h–11FFFFh
88000h–8FFFFh
SA25
010010xxx
64/32
120000h–12FFFFh
90000h–97FFFh
SA26
010011xxx
64/32
130000h–13FFFFh
98000h–9FFFFh
SA27
010100xxx
64/32
140000h–14FFFFh
A0000h–A7FFFh
SA28
010101xxx
64/32
150000h–15FFFFh
A8000h–AFFFFh
SA29
010110xxx
64/32
160000h–16FFFFh
B0000h–B7FFFh
SA30
010111xxx
64/32
170000h–17FFFFh
B8000h–BFFFFh
SA31
011000xxx
64/32
180000h–18FFFFh
C0000h–C7FFFh
SA32
011001xxx
64/32
190000h–19FFFFh
C8000h–CFFFFh
SA33
011010xxx
64/32
1A0000h–1AFFFFh
D0000h–D7FFFh
SA34
011011xxx
64/32
1B0000h–1BFFFFh
D8000h–DFFFFh
SA35
011000xxx
64/32
1C0000h–1CFFFFh
E0000h–E7FFFh
SA36
011101xxx
64/32
1D0000h–1DFFFFh
E8000h–EFFFFh
SA37
011110xxx
64/32
1E0000h–1EFFFFh
F0000h–F7FFFh
SA38
011111xxx
64/32
1F0000h–1FFFFFh
F8000h–FFFFFh
SA39
100000xxx
64/32
200000h–20FFFFh
F9000h–107FFFh
SA40
100001xxx
64/32
210000h–21FFFFh
108000h–10FFFFh
SA41
100010xxx
64/32
220000h–22FFFFh
110000h–117FFFh
SA42
101011xxx
64/32
230000h–23FFFFh
118000h–11FFFFh
SA43
100100xxx
64/32
240000h–24FFFFh
120000h–127FFFh
SA44
100101xxx
64/32
250000h–25FFFFh
128000h–12FFFFh
SA45
100110xxx
64/32
260000h–26FFFFh
130000h–137FFFh
SA46
100111xxx
64/32
270000h–27FFFFh
138000h–13FFFFh
SA47
101000xxx
64/32
280000h–28FFFFh
140000h–147FFFh
SA48
101001xxx
64/32
290000h–29FFFFh
148000h–14FFFFh
SA49
101010xxx
64/32
2A0000h–2AFFFFh
150000h–157FFFh
SA50
101011xxx
64/32
2B0000h–2BFFFFh
158000h–15FFFFh
SA51
101100xxx
64/32
2C0000h–2CFFFFh
160000h–167FFFh
SA52
101101xxx
64/32
2D0000h–2DFFFFh
168000h–16FFFFh
SA53
101110xxx
64/32
2E0000h–2EFFFFh
170000h–177FFFh
26518C3 January 31, 2007
Am29LV320MT/B
15
D A T A
Table 3.
Sector
S H E E T
Am29LV320MB Bottom Boot Sector Architecture (Continued)
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
178000h–17FFFFh
SA54
101111xxx
64/32
2F0000h–2FFFFFh
SA55
110000xxx
64/32
300000h–30FFFFh
180000h–187FFFh
SA56
110001xxx
64/32
310000h–31FFFFh
188000h–18FFFFh
SA57
110010xxx
64/32
320000h–32FFFFh
190000h–197FFFh
SA58
110011xxx
64/32
330000h–33FFFFh
198000h–19FFFFh
SA59
100100xxx
64/32
340000h–34FFFFh
1A0000h–1A7FFFh
SA60
110101xxx
64/32
350000h–35FFFFh
1A8000h–1AFFFFh
SA61
110110xxx
64/32
360000h–36FFFFh
1B0000h–1B7FFFh
SA62
110111xxx
64/32
370000h–37FFFFh
1B8000h–1BFFFFh
SA63
111000xxx
64/32
380000h–38FFFFh
1C0000h–1C7FFFh
SA64
111001xxx
64/32
390000h–39FFFFh
1C8000h–1CFFFFh
SA65
111010xxx
64/32
3A0000h–3AFFFFh
1D0000h–1D7FFFh
SA66
111011xxx
64/32
3B0000h–3BFFFFh
1D8000h–1DFFFFh
SA67
111100xxx
64/32
3C0000h–3CFFFFh
1E0000h–1E7FFFh
SA68
111101xxx
64/32
3D0000h–3DFFFFh
1E8000h–1EFFFFh
SA69
111110xxx
64/32
3E0000h–3EFFFFh
1F0000h–1F7FFFh
SA70
111111xxx
64/32
3F0000h–3FFFFFh
1F8000h–1FFFFFh
Note: The address range is A20:A-1 in byte mode (BYTE# = VIL) or A20:A0 in word mode (BYTE# = VIH)
16
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
Autoselect Mode
In addition, when verifying sector protection, the sector
address must appear on the appropriate highest order
address bits (see Tables 2 and 3). Table 4 shows the
remaining address bits that are don’t care. When all
necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ7–DQ0.
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming
algorithm. However, the autoselect codes can also be
accessed in-system through the command register.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Tables 12 and 13. This
method does not require VID. Refer to the Autoselect
Command Sequence section for more information.
When using programming equipment, the autoselect
mode requires VID on address pin A9. Address pins
A6, A3, A2, A1, and A0 must be as shown in Table 4.
Table 4.
CE#
Manufacturer ID: AMD
L
Device ID
Description
OE# WE#
L
H
Autoselect Codes, (High Voltage Method)
A21 A14
to
to
A15 A10
X
X
A8
to
A7
A6
A5
to
A4
A3
to
A2
A1
A0
VID
X
L
X
L
L
L
00
X
01h
L
L
H
22
X
7Eh
H
H
L
22
X
1Ah
Cycle 1
Cycle 2
L
L
H
X
X
DQ8 to DQ15
A9
VID
X
L
X
Cycle 3
BYTE# BYTE#
= VIH
= VIL
DQ7 to DQ0
H
H
H
22
X
00 (bottom boot)
01h (top boot)
Sector Protection
Verification
L
L
H
SA
X
VID
X
L
X
L
H
L
X
X
01h (protected),
00h (unprotected)
Secured Silicon Sector
Indicator Bit (DQ7),
WP# protects top two
address sector
L
L
H
X
X
VID
X
L
X
L
H
H
X
X
98h (factory locked),
18h (not factory locked)
Secured Silicon Sector
Indicator Bit (DQ7),
WP# protects bottom
two address sector
L
L
H
X
X
VID
X
L
X
L
H
H
X
X
88h (factory locked),
08h (not factory locked)
Legend: L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
26518C3 January 31, 2007
Am29LV320MT/B
17
D A T A
Sector Group Protection and
Unprotection
The hardware sector group protection feature disables
both program and erase operations in any sector
group. In this device, a sector group consists of four
adjacent sectors that are protected or unprotected at
the same time (see Tables 5 and 6). The hardware
sector group unprotection feature re-enables both program and erase operations in previously protected
sector groups. Sector group protection/unprotection
can be implemented via two methods.
Sector protection/unprotection requires VID on the RESET# pin only, and can be implemented either in-system or via programming equipment. Figure 2 shows
the algorithms and Figure 24 shows the timing diagram. This method uses standard microprocessor bus
cycle timing. For sector group unprotect, all unprotected sector groups must first be protected prior to
the first sector group unprotect write cycle.
The device is shipped with all sector groups unprotected. AMD offers the option of programming and protecting sector groups at its factory prior to shipping the
device through AMD’s ExpressFlash™ Service. Contact an AMD representative for details.
It is possible to determine whether a sector group is
protected or unprotected. See the Autoselect Mode
section for details.
Table 5.
18
Am29LV320MT Top Boot
Sector Protection
S H E E T
Sector
A20–A12
Sector/
Sector Block Size
SA66
111111011h
8 Kbytes
SA67
111111100h
8 Kbytes
SA68
111111101h
8 Kbytes
SA69
111111110h
8 Kbytes
SA70
111111111h
8 Kbytes
Table 6.
Am29LV320MB Bottom Boot
Sector Protection
Sector
A20–A12
Sector/
Sector Block Size
SA0
000000000h
8 Kbytes
SA1
000000001h
8 Kbytes
SA2
000000010h
8 Kbytes
SA3
000000011h
8 Kbytes
SA4
000000100h
8 Kbytes
SA5
000000101h
8 Kbytes
SA6
000000110h
8 Kbytes
SA7
000000111h
8 Kbytes
SA8–SA10
000001XXXh,
000010XXXh,
000011XXXh,
192 (3x64) Kbytes
SA11–SA14
0001XXXXXh
256 (4x64) Kbytes
SA15–SA18
0010XXXXXh
256 (4x64) Kbytes
SA19–SA22
0011XXXXXh
256 (4x64) Kbytes
SA23–SA26
0100XXXXXh
256 (4x64) Kbytes
SA27-SA30
0101XXXXXh
256 (4x64) Kbytes
SA31-SA34
0110XXXXXh
256 (4x64) Kbytes
Sector
A20–A12
Sector/
Sector Block Size
SA35-SA38
0111XXXXXh
256 (4x64) Kbytes
SA0-SA3
0000XXXXXh
256 (4x64) Kbytes
SA39-SA42
1000XXXXXh
256 (4x64) Kbytes
SA4-SA7
0001XXXXXh
256 (4x64) Kbytes
SA43-SA46
1001XXXXXh
256 (4x64) Kbytes
SA8-SA11
0010XXXXXh
256 (4x64) Kbytes
SA47-SA50
1010XXXXXh
256 (4x64) Kbytes
SA12-SA15
0011XXXXXh
256 (4x64) Kbytes
SA51-SA54
1011XXXXXh
256 (4x64) Kbytes
SA16-SA19
0100XXXXXh
256 (4x64) Kbytes
SA55–SA58
1100XXXXXh
256 (4x64) Kbytes
SA20-SA23
0101XXXXXh
256 (4x64) Kbytes
SA59–SA62
1101XXXXXh
256 (4x64) Kbytes
SA24-SA27
0110XXXXXh
256 (4x64) Kbytes
SA63–SA66
1110XXXXXh
256 (4x64) Kbytes
SA67–SA70
1111XXXXXh
256 (4x64) Kbytes
SA28-SA31
0111XXXXXh
256 (4x64) Kbytes
SA32–SA35
1000XXXXXh,
256 (4x64) Kbytes
SA36–SA39
1001XXXXXh
256 (4x64) Kbytes
SA40–SA43
1010XXXXXh
256 (4x64) Kbytes
SA44–SA47
1011XXXXXh
256 (4x64) Kbytes
SA48–SA51
1100XXXXXh
256 (4x64) Kbytes
SA52-SA55
1101XXXXXh
256 (4x64) Kbytes
SA56-SA59
1110XXXXXh
256 (4x64) Kbytes
SA60-SA62
111100XXXh
111101XXXh
111110XXXh
192 (3x64) Kbytes
SA63
111111000h
8 Kbytes
SA64
111111001h
8 Kbytes
SA65
111111010h
8 Kbytes
Write Protect (WP#)
The Write Protect function provides a hardware
method of protecting the top two or bottom two sectors
without using V ID. WP# is one of two functions provided by the WP#/ACC input.
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the first
or last sector independently of whether those sectors
were protected or unprotected using the method described in Sector Group Protection and Unprotection.
Note that if WP#/ACC is at VIL when the device is in
the standby mode, the maximum input load current is
increased. See the table in DC Characteristics.
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the top or bottom two sectors
were previously set to be protected or unprotected
using the method described in Sector Group Protection and Unprotection. Note: No external pullup is necessary since the WP#/ACC pin has internal pullup to
VCC
START
RESET# = VID
(Note 1)
Temporary Sector Group Unprotect
Perform Erase or
Program Operations
(Note: In this device, a sector group consists of four adjacent
sectors that are protected or unprotected at the same time
(see Table 6).
This feature allows temporary unprotection of previously protected sector groups to change data in-system. The Sector Group Unprotect mode is activated by
setting the RESET# pin to VID. During this mode, formerly protected sector groups can be programmed or
erased by selecting the sector group addresses. Once
VID is removed from the RESET# pin, all the previously
protected sector groups are protected again. Figure 1
shows the algorithm, and Figure 23 shows the timing
diagrams, for this feature.
RESET# = VIH
Temporary Sector
Group Unprotect
Completed (Note 2)
Notes:
1. All protected sector groups unprotected (If WP# = VIL,
the first or last sector will remain protected).
2. All previously protected sector groups are protected
once again.
Figure 1. Temporary Sector Group
Unprotect Operation
26518C3 January 31, 2007
Am29LV320MT/B
19
D A T A
S H E E T
START
START
PLSCNT = 1
RESET# = VID
Wait 1 μs
Temporary Sector
Group Unprotect
Mode
No
PLSCNT = 1
Protect all sector
groups: The indicated
portion of the sector
group protect algorithm
must be performed for all
unprotected sector
groups prior to issuing
the first sector group
unprotect address
RESET# = VID
Wait 1 μs
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Temporary Sector
Group Unprotect
Mode
Yes
Yes
Set up sector
group address
No
All sector
groups
protected?
Yes
Sector Group Protect:
Write 60h to sector
group address with
A6–A0 = 0xx0010
Set up first sector
group address
Sector Group
Unprotect:
Write 60h to sector
group address with
A6–A0 = 1xx0010
Wait 150 µs
Verify Sector Group
Protect: Write 40h
to sector group
address with
A6–A0 = 0xx0010
Increment
PLSCNT
No
Reset
PLSCNT = 1
Read from
sector group address
with A6–A0
= 0xx0010
Wait 15 ms
Verify Sector Group
Unprotect: Write
40h to sector group
address with
A6–A0 = 1xx0010
Increment
PLSCNT
No
No
PLSCNT
= 25?
Read from
sector group
address with
A6–A0 = 1xx0010
Data = 01h?
Yes
No
Yes
Device failed
Protect
another
sector group?
Yes
PLSCNT
= 1000?
No
Yes
Remove VID
from RESET#
Device failed
Write reset
command
Sector Group
Protect
Algorithm
Set up
next sector group
address
No
Data = 00h?
Yes
Last sector
group
verified?
No
Yes
Sector Group
Protect complete
Sector Group
Unprotect
Algorithm
Remove VID
from RESET#
Write reset
command
Sector Group
Unprotect complete
Figure 2.
20
In-System Sector Group Protect/Unprotect Algorithms
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
Secured Silicon Sector Flash
Memory Region
Customer Lockable: Secured Silicon Sector NOT
Programmed or Protected At the Factory
The Secured Silicon Sector feature provides a Flash
memory region that enables permanent part identification through an Electronic Serial Number (ESN). The
Secured Silicon Sector is 256 bytes in length, and
uses a Secured Silicon Sector Indicator Bit (DQ7) to
indicate whether or not the Secured Silicon Sector is
locked when shipped from the factory. This bit is permanently set at the factory and cannot be changed,
which prevents cloning of a factory locked part. This
ensures the security of the ESN once the product is
shipped to the field.
Unless otherwise specified, the device is shipped such
that the customer may program and protect the
256-byte Secured Silicon sector.
AMD offers the device with the Secured Silicon Sector
either customer lockable (standard shipping option) or
factory locked (contact an AMD sales representative
for ordering information). The customer-lockable version is shipped with the Secured Silicon Sector unprotected, allowing customers to program the sector after
receiving the device. The customer-lockable version
also has the Secured Silicon Sector Indicator Bit permanently set to a “0.” The factory-locked version is always protected when shipped from the factory, and
has the Secured Silicon (Secured Silicon) Sector Indicator Bit permanently set to a “1.” Thus, the Secured
Silicon Sector Indicator Bit prevents customer-lockable
devices from being used to replace devices that are
factory locked. Note that the ACC function and unlock
bypass modes are not available when the Secured Silicon Sector is enabled.
The Secured Silicon sector address space in this device is allocated as follows:
Table 7. Secured Silicon Sector Contents
Secured Silicon
Sector Address
Range
000000h–000007h
Customer
Lockable
Determined by
customer
000008h–00007Fh
ESN Factory
Locked
ExpressFlash
Factory Locked
ESN
ESN or
determined by
customer
Unavailable
Determined by
customer
The system accesses the Secured Silicon Sector
through a command sequence (see Enter Secured Silicon Sector/Exit Secured Silicon Sector
Command Sequence). After the system has written
the Enter Secured Silicon Sector command sequence,
it may read the Secured Silicon Sector by using the
addresses normally occupied by the first sector (SA0).
This mode of operation continues until the system issues the Exit Secured Silicon Sector command sequence, or until power is removed from the device. On
power-up, or following a hardware reset, the device reverts to sending commands to sector SA0.
26518C3 January 31, 2007
The system may program the Secured Silicon Sector
using the write-buffer, accelerated and/or unlock bypass methods, in addition to the standard programming command sequence. See Command Definitions.
Programming and protecting the Secured Silicon Sector must be used with caution since, once protected,
there is no procedure available for unprotecting the
Secured Silicon Sector area and none of the bits in the
Secured Silicon Sector memory space can be modified in any way.
The Secured Silicon Sector area can be protected
using one of the following procedures:
■ Write the three-cycle Enter Secured Silicon Sector
Region command sequence, and then follow the
in-system sector protect algorithm as shown in Figure 2, except that RESET# may be at either VIH or
VID. This allows in-system protection of the Secured
Silicon Sector without raising any device pin to a
high voltage. Note that this method is only applicable to the Secured Silicon Sector.
■ To verify the protect/unprotect status of the Secured
Silicon Sector, follow the algorithm shown in Figure
3.
Once the Secured Silicon Sector is programmed,
locked and verified, the system must write the Exit Secured Silicon Sector Region command sequence to
return to reading and writing within the remainder of
the array.
Factory Locked: Secured Silicon Sector
Programmed and Protected At the Factory
In devices with an ESN, the Secured Silicon Sector is
protected when the device is shipped from the factory.
The Secured Silicon Sector cannot be modified in any
way. An ESN Factory Locked device has an 16-byte
random ESN at addresses 000000h–000007h. Please
contact your local AMD sales representative for details
on ordering ESN Factory Locked devices.
Customers may opt to have their code programmed by
AMD through the AMD ExpressFlash service (Express
Flash Factory Locked). The devices are then shipped
from AMD’s factory with the Secured Silicon Sector
permanently locked. Contact an AMD representative
for details on using AMD’s ExpressFlash service.
Am29LV320MT/B
21
D A T A
S H E E T
hardware data protection measures prevent accidental
erasure or programming, which might otherwise be
caused by spurious system level signals during VCC
power-up and power-down transitions, or from system
noise.
START
RESET# =
VIH or VID
Wait 1 ms
Write 60h to
any address
Write 40h to SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
Read from SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
Figure 3.
If data = 00h,
SecSi Sector is
unprotected.
If data = 01h,
SecSi Sector is
protected.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to the read mode. Subsequent
writes are ignored until VCC is greater than VLKO. The
system must provide the proper signals to the control
pins to prevent unintentional writes when V CC is
greater than VLKO.
Remove VIH or VID
from RESET#
Write reset
command
Write Pulse “Glitch” Protection
SecSi Sector
Protect Verify
complete
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
Logical Inhibit
Secured Silicon Sector Protect Verify
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Tables 12 and 13
for command definitions). In addition, the following
If WE# = CE# = VIL and OE# = VIH during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automatically reset to the read mode on power-up.
COMMON FLASH MEMORY INTERFACE (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h, any time the device is ready to read array data.
The system can read CFI information at the addresses
22
given in Tables 8–11. To terminate reading CFI data,
the system must write the reset command.
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 8–11. The
system must write the reset command to return the
device to reading array data.
For further information, please refer to the CFI Specification and CFI Publication 100, available via the World
Wide Web at http://www.amd.com/flash/cfi. Alternatively, contact an AMD representative for copies of
these documents.
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
Table 8.
S H E E T
CFI Query Identification String
Addresses
(x16)
Addresses
(x8)
Data
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Description
Table 9.
System Interface String
Addresses
(x16)
Addresses
(x8)
Data
1Bh
36h
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0007h
Typical timeout per single byte/word write 2N µs
20h
40h
0007h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2N ms
22h
44h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
46h
0001h
Max. timeout for byte/word write 2N times typical
24h
48h
0005h
Max. timeout for buffer write 2N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
26518C3 January 31, 2007
Description
Am29LV320MT/B
23
D A T A
Table 10.
S H E E T
Device Geometry Definition
Addresses
(x16)
Addresses
(x8)
Data
27h
4Eh
0016h
Device Size = 2N byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0005h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
58h
0002h
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
007Fh
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
003Eh
0000h
0000h
0001h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
24
Description
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
Table 11.
S H E E T
Primary Vendor-Specific Extended Query
Addresses
(x16)
Addresses
(x8)
Data
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII
44h
88h
0033h
Minor version number, ASCII
45h
8Ah
0008h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Description
Process Technology (Bits 7-2) 0010b = 0.23 µm MirrorBit
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0004h
Sector Protect/Unprotect scheme
04 = 29LV800 mode
4Ah
94h
0000h
Simultaneous Operation
00 = Not Supported, X = Number of Sectors in Bank
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
98h
0001h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
9Ah
00B5h
4Eh
9Ch
00C5h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
4Fh
9Eh
0002h/
0003h
50h
A0h
0001h
00h = Uniform Device without WP# protect, 02h = Bottom Boot Device, 03h = Top
Boot Device, 04h = Uniform sectors bottom WP# protect, 05h = Uniform sectors top
WP# protect
Program Suspend
00h = Not Supported, 01h = Supported
COMMAND DEFINITIONS
Writing specific address and data commands or sequences into the command register initiates device operations. Tables 12 and 13 define the valid register
command sequences. Writing incorrect address and
data values or writing them in the improper sequence may place the device in an unknown state. A
reset command is then required to return the device to
reading array data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
26518C3 January 31, 2007
first. Refer to the AC Characteristics section for timing
diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the erase-suspend-read mode, after
Am29LV320MT/B
25
D A T A
which the system can read data from any
non-erase-suspended sector. After completing a programming operation in the Erase Suspend mode, the
system may once again read array data with the same
exception. See the Erase Suspend/Erase Resume
Commands section for more information.
The system must issue the reset command to return
the device to the read (or erase-suspend-read) mode if
DQ5 goes high during an active program or erase operation, or if the device is in the autoselect mode. See
the next section, Reset Command, for more information.
See also Requirements for Reading Array Data in the
Device Bus Operations section for more information.
The Read-Only Operations table provides the read parameters, and Figure 14 shows the timing diagram.
Reset Command
Writing the reset command resets the device to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to the read
mode. Once erasure begins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the device to
the read mode. If the program command sequence is
written while the device is in the Erase Suspend mode,
writing the reset command returns the device to the
erase-suspend-read mode. Once programming begins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If the device entered the autoselect mode while in the Erase
Suspend mode, writing the reset command returns the
device to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to the
read mode (or erase-suspend-read mode if the device
was in Erase Suspend).
Note that if DQ1 goes high during a Write Buffer Programming operation, the system must write the
Write-to-Buffer-Abort Reset command sequence to
reset the device for the next operation.
26
S H E E T
Autoselect Command Sequence
The autoselect command sequence allows the host
system to read several identifier codes at specific addresses:
Identifier Code
A7:A0
(x16)
A6:A-1
(x8)
Manufacturer ID
00h
00h
Device ID, Cycle 1
01h
02h
Device ID, Cycle 2
0Eh
1Ch
Device ID, Cycle 3
0Fh
1Eh
Secured Silicon Sector Factory
Protect
03h
06h
Sector Protect Verify
(SA)02h
(SA)04h
Note: The device ID is read over three cycles. SA = Sector
Address
Tables 12 and 13 show the address and data requirements. This method is an alternative to that shown in
Table 4, which is intended for PROM programmers
and requires VID on address pin A9. The autoselect
command sequence may be written to an address that
is either in the read or erase-suspend-read mode. The
autoselect command may not be written while the device is actively programming or erasing.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the autoselect command. The
device then enters the autoselect mode. The system
may read at any address any number of times without
initiating another autoselect command sequence.
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the device was previously in Erase Suspend).
Enter Secured Silicon Sector/Exit Secured
Silicon Sector Command Sequence
The Secured Silicon Sector region provides a secured
data area containing an 8-word/16-byte random Electronic Serial Number (ESN). The system can access
the Secured Silicon Sector region by issuing the
three-cycle Enter Secured Silicon Sector command
sequence. The device continues to access the Secured Silicon Sector region until the system issues the
four-cycle Exit Secured Silicon Sector command sequence. The Exit Secured Silicon Sector command
sequence returns the device to normal operation. Tables 12 and 13 show the address and data requirements for both command sequences. See also Secured
Silicon Sector Flash Memory Region for further information. Note that the ACC function and unlock bypass
modes are not available when the Secured Silicon
Sector is enabled.
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
Word/Byte Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verifies the
programmed cell margin. Tables 12 and 13 show the
address and data requirements for the word program
command sequence.
When the Embedded Program algorithm is complete,
the device then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using
DQ7 or DQ6. Refer to the Write Operation Status section for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program
operation. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when a
program operation is in progress. The program command sequence should be reinitiated once the device
has returned to the read mode, to ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from “0” back to a “1.” Attempting to do so may
cause the device to set DQ5 = 1, or cause the DQ7
and DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the
data is still “0.” Only erase operations can convert a “0”
to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program words to the device faster than using the standard program command sequence. The unlock bypass
command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. The device
then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is
required to program in this mode. The first cycle in this
sequence contains the unlock bypass program command, A0h; the second cycle contains the program
address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial
two unlock cycles required in the standard program
command sequence, resulting in faster total programming time. Tables 12 and 13 show the requirements
for the command sequence.
26518C3 January 31, 2007
S H E E T
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the data
90h. The second cycle must contain the data 00h. The
device then returns to the read mode.
Write Buffer Programming
Write Buffer Programming allows the system write to a
maximum of 16 words/32 bytes in one programming
operation. This results in faster effective programming
time than the standard programming algorithms. The
Write Buffer Programming command sequence is initiated by first writing two unlock cycles. This is followed
by a third write cycle containing the Write Buffer Load
command written at the Sector Address in which programming will occur. The fourth cycle writes the sector
address and the number of word locations, minus one,
to be programmed. For example, if the system will program 6 unique address locations, then 05h should be
written to the device. This tells the device how many
write buffer addresses will be loaded with data and
therefore when to expect the Program Buffer to Flash
command. The number of locations to program cannot
exceed the size of the write buffer or the operation will
abort.
The fifth cycle writes the first address location and
data to be programmed. The write-buffer-page is selected by address bits AMAX–A 4. All subsequent add r e s s / d a t a p a i r s m u s t fa l l w i t h i n t h e
selected-write-buffer-page. The system then writes the
remaining address/data pairs into the write buffer.
Write buffer locations may be loaded in any order.
The write-buffer-page address must be the same for
all address/data pairs loaded into the write buffer.
(This means Write Buffer Programming cannot be performed across multiple write-buffer pages. This also
means that Write Buffer Programming cannot be performed across multiple sectors. If the system attempts
to load programming data outside of the selected
write-buffer page, the operation will abort.
Note that if a Write Buffer address location is loaded
multiple times, the address/data pair counter will be
decremented for every data load operation. The host
s y s t e m mu s t t h e r e fo r e a c c o u n t fo r l o a d i n g a
write-buffer location more than once. The counter decrements for each data load operation, not for each
unique write-buffer-address location. Note also that if
an address location is loaded more than once into the
buffer, the final data loaded for that address will be
programmed.
Once the specified number of write buffer locations
have been loaded, the system must then write the Program Buffer to Flash command at the sector address.
Any other address and data combination aborts the
Am29LV320MT/B
27
D A T A
Write Buffer Programming operation. The device then
begins programming. Data polling should be used
while monitoring the last address location loaded into
the write buffer. DQ7, DQ6, DQ5, and DQ1 should be
monitored to determine the device status during Write
Buffer Programming.
The write-buffer programming operation can be suspended using the standard program suspend/resume
commands. Upon successful completion of the Write
Buffer Programming operation, the device is ready to
execute the next command.
The Write Buffer Programming Sequence can be
aborted in the following ways:
■ Load a value that is greater than the page buffer
size during the Number of Locations to Program
step.
■ Write to an address in a sector different than the
one specified during the Write-Buffer-Load command.
■ Write an Address/Data pair to a different
write-buffer-page than the one selected by the
Starting Address during the write buffer data loading stage of the operation.
■ Write data other than the Confirm Command after
the specified number of data load cycles.
28
S H E E T
The abort condition is indicated by DQ1 = 1, DQ7 =
DATA# (for the last address location loaded), DQ6 =
toggle, and DQ5=0. A Write-to-Buffer-Abort Reset
command sequence must be written to reset the device for the next operation. Note that the full 3-cycle
Write-to-Buffer-Abort Reset command sequence is required when using Write-Buffer-Programming features
in Unlock Bypass mode.
Accelerated Program
The device offers accelerated program operations
through the WP#/ACC pin. When the system asserts
VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode. The system may then
write the two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
WP#/ACC pin to accelerate the operation. Note that
the WP#/ACC pin must not be at VHH for operations
other than accelerated programming, or device damage may result. In addition, no external pullup is necessary since the WP#/ACC pin has internal pullup to
VCC.
Figure 5 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations
table in the AC Characteristics section for parameters,
and Figure 17 for timing diagrams.
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
Write “Write to Buffer”
command and
Sector Address
Part of “Write to Buffer”
Command Sequence
Write number of addresses
to program minus 1(WC)
and Sector Address
Write first address/data
Yes
WC = 0 ?
No
Write to a different
sector address
Abort Write to
Buffer Operation?
Yes
Write to buffer ABORTED.
Must write “Write-to-buffer
Abort Reset” command
sequence to return
to read mode.
No
(Note 1)
Write next address/data pair
WC = WC - 1
Write program buffer to
flash sector address
Notes:
Read DQ7 - DQ0 at
Last Loaded Address
When Sector Address is specified, any address in
the selected sector is acceptable. However, when
loading Write-Buffer address locations with data, all
addresses must fall within the selected Write-Buffer
Page.
2.
DQ7 may change simultaneously with DQ5.
Therefore, DQ7 should be verified.
3.
If this flowchart location was reached because
DQ5= “1”, then the device FAILED. If this flowchart
location was reached because DQ1= “1”, then the
Write to Buffer operation was ABORTED. In either
case, the proper reset command must be written
before the device can begin another operation. If
DQ1=1, write the
Write-Buffer-Programming-Abort-Reset
command. if DQ5=1, write the Reset command.
4.
See Tables 12 and 13 for command sequences
required for write buffer programming.
Yes
DQ7 = Data?
No
1.
No
No
DQ1 = 1?
DQ5 = 1?
Yes
Yes
Read DQ7 - DQ0 with
address = Last Loaded
Address
(Note 2)
DQ7 = Data?
Yes
No
(Note 3)
FAIL or ABORT
Figure 4.
26518C3 January 31, 2007
PASS
Write Buffer Programming Operation
Am29LV320MT/B
29
D A T A
S H E E T
Program Suspend/Program Resume
Command Sequence
The Program Suspend command allows the system to
interrupt a programming operation or a Write to Buffer
programming operation so that data can be read from
any non-suspended sector. When the Program Suspend command is written during a programming process, the device halts the program operation within 15
µs maximum (5 µs typical) and updates the status bits.
Addresses are not required when writing the Program
Suspend command.
START
Write Program
Command Sequence
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note: See Tables 12 and 13 for program command
sequence.
Figure 5.
Program Operation
No
After the programming operation has been suspended, the system can read array data from any
non-suspended sector. The Program Suspend command may also be issued during a programming operation while an erase is suspended. In this case, data
may be read from any addresses not in Erase Suspend or Program Suspend. If a read is needed from
the Secured Silicon Sector area (One-time Program
area), then user must use the proper command sequences to enter and exit this region.
The system may also write the autoselect command
sequence when the device is in the Program Suspend
mode. The system can read as many autoselect codes
as required. When the device exits the autoselect
mode, the device reverts to the Program Suspend
mode, and is ready for another valid operation. See
Autoselect Command Sequence for more information.
After the Program Resume command is written, the
device reverts to programming. The system can determine the status of the program operation using the
DQ7 or DQ6 status bits, just as in the standard program operation. See Write Operation Status for more
information.
The system must write the Program Resume command (address bits are don’t care) to exit the Program
Suspend mode and continue the programming operation. Further writes of the Resume command are ignored. Another Program Suspend command can be
written after the device has resume programming.
30
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
curs, the chip erase command sequence should be
reinitiated once the device has returned to reading
array data, to ensure data integrity.
Program Operation
or Write-to-Buffer
Sequence in Progress
Write address/data
XXXh/B0h
Write Program Suspend
Command Sequence
Figure 7 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters,
and Figure 19 section for timing diagrams.
Command is also valid for
Erase-suspended-program
operations
Sector Erase Command Sequence
Wait 15 μs
Autoselect operations are also allowed
Read data as
required
No
S H E E T
Data cannot be read from erase- or
program-suspended sectors
Done
reading?
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and
the sector erase command. Tables 12 and 13 shows
the address and data requirements for the sector
erase command sequence. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when a program operation is in progress.
Yes
Write address/data
XXXh/30h
The device does not require the system to preprogram
prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or timings during these operations.
Write Program Resume
Command Sequence
Device reverts to
operation prior to
Program Suspend
Figure 6. Program Suspend/Program Resume
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations. Tables 12 and
13 shows the address and data requirements for the
chip erase command sequence. Note that the Secured
Silicon Sector, autoselect, and CFI functions are unavailable when a program operation is in progress.
When the Embedded Erase algorithm is complete, the
device returns to the read mode and addresses are no
longer latched. The system can determine the status
of the erase operation by using DQ7, DQ6, or DQ2.
Refer to the Write Operation Status section for information on these status bits.
Any commands written during the chip erase operation
are ignored. However, note that a hardware reset immediately terminates the erase operation. If that oc-
26518C3 January 31, 2007
After the command sequence is written, a sector erase
time-out of 50 µs occurs. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time
between these additional cycles must be less than 50
µs, otherwise erasure may begin. Any sector erase address and command following the exceeded time-out
may or may not be accepted. It is recommended that
processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can
be re-enabled after the last Sector Erase command is
written. Any command other than Sector Erase or
Erase Suspend during the time-out period resets
the device to the read mode. The system must rewrite the command sequence and any additional addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3:
Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses
are no longer latched. The system can determine the
status of the erase operation by reading DQ7, DQ6, or
DQ2 in the erasing sector. Refer to the Write Operation Status section for information on these status bits.
Am29LV320MT/B
31
D A T A
S H E E T
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands are ignored. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once the device has returned to
reading array data, to ensure data integrity.
When the Erase Suspend command is written during
the sector erase operation, the device requires a typical of 5 µs (maximum of 20 µs) to suspend the erase
operation. However, when the Erase Suspend command is written during the sector erase time-out, the
device immediately terminates the time-out period and
suspends the erase operation.
Figure 7 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters,
and Figure 19 section for timing diagrams.
After the erase operation has been suspended, the
device enters the erase-suspend-read mode. The system can read data from or program data to any sector
not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at
any address within erase-suspended sectors produces status information on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
Refer to the Write Operation Status section for information on these status bits.
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
No
After an erase-suspended program operation is complete, the device returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard word program operation.
Refer to the Write Operation Status section for more
information.
Embedded
Erase
algorithm
in progress
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
Autoselect Mode and Autoselect Command Sequence
sections for details.
Data = FFh?
To resume the sector erase operation, the system
must write the Erase Resume command. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the chip
has resumed erasing.
Yes
Erasure Completed
Notes:
1. See Tables 12 and 13 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
Figure 7.
Erase Operation
Erase Suspend/Erase Resume
Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. This command is valid only during the sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program
algorithm.
32
Note that during an erase operation, this flash device
performs multiple internal operations that are invisible
to the host system. When an erase operation is suspended, any of the operations that were not fully completed must be restarted. As such, if this flash device
is continually issued suspend/resume commands in
rapid succession, erase progress will be impeded as a
function of the number of suspends. The result will be
a longer cumulative time than without suspends. The
additional suspends do not affect device reliability or
future performance. In most systems rapid erase/suspend activity occurs only briefly. In this example, erase
performance will not be significantly impacted.
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
Command Definitions
Table 12.
Command Definitions (x16 Mode, BYTE# = VIH)
Cycles
Bus Cycles (Notes 1–4)
Addr
Read (Note 5)
1
RA
Reset (Note 6)
Autoselect (Note 7)
Command Sequence
(Notes)
First
Second
Data
RD
Third
Fourth
Fifth
Addr
Data
Addr
Data
Addr
Data
1
XXX
F0
Manufacturer ID
4
555
AA
2AA
55
555
90
X00
0001
Device ID (Note 8)
6
555
AA
2AA
55
555
90
X01
227E
Secured Silicon Sector Factory
Protect (Note 9)
4
555
AA
2AA
55
555
90
X03
(Note 9)
Sector Group Protect Verify
(Note 10)
4
555
AA
2AA
55
555
90
(SA)X02
00/01
88
Sixth
Addr
Data
Addr
Data
X0E
221A
X0F
2200/
2201
PD
Enter Secured Silicon Sector Region
3
555
AA
2AA
55
555
Exit Secured Silicon Sector Region
4
555
AA
2AA
55
555
90
XXX
00
Program
4
555
AA
2AA
55
555
A0
PA
PD
Write to Buffer (Note 11)
6
555
AA
2AA
55
SA
25
SA
WC
PA
PD
WBL
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset (Note 12)
3
555
AA
2AA
55
555
F0
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program (Note 13)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 14)
2
XXX
90
XXX
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Program/Erase Suspend (Note 15)
1
XXX
B0
Program/Erase Resume (Note 16)
1
XXX
30
CFI Query (Note 17)
1
55
98
Legend:
X = Don’t care
RA = Read Address of the memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on the falling edge of the WE#
or CE# pulse, whichever happens later.
PD = Program Data for location PA. Data latches on the rising edge of
WE# or CE# pulse, whichever happens first.
Notes:
1. See Table 1 for description of bus operations.
SA = Sector Address of sector to be verified (in autoselect mode) or
erased. Address bits A20–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within the same write
buffer page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
bottom two address sectors, the data is 88h for factory locked and
08h for not factor locked.
2.
All values are in hexadecimal.
3.
Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
10. The data is 00h for an unprotected sector group and 01h for a
protected sector group.
4.
During unlock cycles, when lower address bits are 555 or 2AAh
as shown in table, address bits higher than A11 (except where BA
is required) and data bits higher than DQ7 are don’t cares.
11. The total number of cycles in the command sequence is
determined by the number of words written to the write buffer. The
maximum number of cycles in the command sequence is 21.
5.
No unlock or command cycles required when device is in read
mode.
12. Command sequence resets device for next command after
aborted write-to-buffer operation.
6.
The Reset command is required to return to the read mode (or to
the erase-suspend-read mode if previously in Erase Suspend)
when the device is in the autoselect mode, or if DQ5 goes high
while the device is providing status information.
13. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
7.
The fourth cycle of the autoselect command sequence is a read
cycle. Data bits DQ15–DQ8 are don’t care. See the Autoselect
Command Sequence section for more information.
8.
The device ID must be read in three cycles. The data is 2201h for
top boot and 2200h for bottom boot.
15. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation.
9.
If WP# protects the top two address sectors, the data is 98h for
factory locked and 18h for not factory locked. If WP# protects the
26518C3 January 31, 2007
14. The Unlock Bypass Reset command is required to return to the
read mode when the device is in the unlock bypass mode.
16. The Erase Resume command is valid only during the Erase
Suspend mode.
17. Command is valid when device is ready to read array data or when
device is in autoselect mode.
Am29LV320MT/B
33
D A T A
Table 13.
Command Definitions (x8 Mode, BYTE# = VIL)
Cycles
Bus Cycles (Notes 1–4)
Addr
Read (Note 5)
1
RA
Reset (Note 6)
Autoselect (Note 7)
Command Sequence
(Notes)
S H E E T
First
Second
Data
RD
Addr
Data
Third
Addr
Fourth
Data
Addr
Fifth
Data
1
XXX
F0
Manufacturer ID
4
AAA
AA
555
55
AAA
90
X00
01
Device ID (Note 8)
6
AAA
AA
555
55
AAA
90
X02
7E
Secured Silicon Sector Factory
Protect (Note 9)
4
AAA
AA
555
55
AAA
90
X06
(Note 9)
Sector Group Protect Verify
(Note 10)
4
AAA
AA
555
55
AAA
90
(SA)X04
00/01
Sixth
Addr
Data
Addr
Data
X1C
1A
X1E
00/01
PA
PD
WBL
PD
Enter Secured Silicon Sector Region
3
AAA
AA
555
55
AAA
88
Exit Secured Silicon Sector Region
4
AAA
AA
555
55
AAA
90
XXX
00
Program
4
AAA
AA
555
55
AAA
A0
PA
PD
Write to Buffer (Note 11)
6
AAA
AA
555
55
SA
25
SA
BC
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset (Note 12)
3
AAA
AA
555
55
AAA
F0
Unlock Bypass
3
AAA
AA
555
55
AAA
20
Unlock Bypass Program (Note 13)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 14)
2
XXX
90
XXX
00
Chip Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Sector Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
SA
30
Program/Erase Suspend (Note 15)
1
XXX
B0
Program/Erase Resume (Note 16)
1
XXX
30
CFI Query (Note 17)
1
AA
98
Legend:
X = Don’t care
RA = Read Address of the memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on the falling edge of the WE#
or CE# pulse, whichever happens later.
PD = Program Data for location PA. Data latches on the rising edge of
WE# or CE# pulse, whichever happens first.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
SA = Sector Address of sector to be verified (in autoselect mode) or
erased. Address bits A20–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within the same write
buffer page as PA.
BC = Byte Count. Number of write buffer locations to load minus 1.
bottom two address sectors, the data is 88h for factory locked and
08h for not factor locked.
3.
Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
10. The data is 00h for an unprotected sector group and 01h for a
protected sector group.
4.
During unlock cycles, when lower address bits are 555 or AAAh
as shown in table, address bits higher than A11 (except where BA
is required) and data bits higher than DQ7 are don’t cares.
11. The total number of cycles in the command sequence is
determined by the number of words written to the write buffer. The
maximum number of cycles in the command sequence is 37.
5.
No unlock or command cycles required when device is in read
mode.
12. Command sequence resets device for next command after
aborted write-to-buffer operation.
6.
The Reset command is required to return to the read mode (or to
the erase-suspend-read mode if previously in Erase Suspend)
when the device is in the autoselect mode, or if DQ5 goes high
while the device is providing status information.
13. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
7.
The fourth cycle of the autoselect command sequence is a read
cycle. Data bits DQ15–DQ8 are don’t care. See the Autoselect
Command Sequence section for more information.
8.
The device ID must be read in three cycles. The data is 01h for
top boot and 00h for bottom boot
15. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation.
9.
If WP# protects the top two address sectors, the data is 98h for
factory locked and 18h for not factory locked. If WP# protects the
34
14. The Unlock Bypass Reset command is required to return to the
read mode when the device is in the unlock bypass mode.
16. The Erase Resume command is valid only during the Erase
Suspend mode.
17. Command is valid when device is ready to read array data or when
device is in autoselect mode.
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
WRITE OPERATION STATUS
The device provides several bits to determine the status of a
program or erase operation: DQ2, DQ3, DQ5, DQ6, and
DQ7. Table 14 and the following subsections describe the
function of these bits. DQ7 and DQ6 each offer a method for
determining whether a program or erase operation is complete or in progress. The device also provides a hardware-based output signal, RY/BY#, to determine
whether an Embedded Program or Erase operation is
in progress or has been completed.
valid data, the data outputs on DQ0–DQ6 may be still
invalid. Valid data on DQ0–DQ7 will appear on successive read cycles.
Table 14 shows the outputs for Data# Polling on DQ7.
Figure 8 shows the Data# Polling algorithm. Figure 20
in the AC Characteristics section shows the Data#
Polling timing diagram.
DQ7: Data# Polling
START
The Data# Polling bit, DQ7, indicates to the host system
whether an Embedded Program or Erase algorithm is in
progress or completed, or whether the device is in Erase
Suspend. Data# Polling is valid after the rising edge of the
final WE# pulse in the command sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to
DQ7. This DQ7 status also applies to programming during
Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to
DQ7. The system must provide the program address to
read valid status information on DQ7. If a program address
falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then the device returns to the
read mode.
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
No
No
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the
sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the
device returns to the read mode. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected
sector, the status may not be valid.
Just prior to the completion of an Embedded Program
or Erase operation, DQ7 may change asynchronously
with DQ0–DQ6 while Output Enable (OE#) is asserted
low. That is, the device may change from providing
status information to valid data on DQ7. Depending on
when the system samples the DQ7 output, it may read
the status or valid data. Even if the device has completed the program or erase operation and DQ7 has
26518C3 January 31, 2007
Yes
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Am29LV320MT/B
Figure 8.
Data# Polling Algorithm
35
D A T A
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin
which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is in the read mode, the standby
mode, or in the erase-suspend-read mode. Table 14
shows the outputs for RY/BY#.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase
Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or
CE# to control the read cycles. When the operation is
complete, DQ6 stops toggling.
36
S H E E T
After an erase command sequence is written, if all sectors
selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading array data. If not all
selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine
whether a sector is actively erasing or is erase-suspended.
When the device is actively erasing (that is, the Embedded
Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling.
However, the system must also use DQ2 to determine
which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on
DQ7: Data# Polling).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 μs after the program
command sequence is written, then returns to reading
array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Program algorithm is complete.
Table 14 shows the outputs for Toggle Bit I on DQ6.
Figure 9 shows the toggle bit algorithm. Figure 21 in
the AC Characteristics section shows the toggle bit
timing diagrams. Figure 22 shows the differences between DQ2 and DQ6 in graphical form. See also the
subsection on DQ2: Toggle Bit II.
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
START
Read DQ7–DQ0
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and
mode information. Refer to Table 14 to compare outputs for DQ2 and DQ6.
Read DQ7–DQ0
Toggle Bit
= Toggle?
No
Yes
No
Figure 9 shows the toggle bit algorithm in flowchart
form, and the section DQ2: Toggle Bit II explains the
algorithm. See also the RY/BY#: Ready/Busy# subsection. Figure 21 shows the toggle bit timing diagram.
Figure 22 shows the differences between DQ2 and
DQ6 in graphical form.
DQ5 = 1?
Yes
Read DQ7–DQ0
Twice
Toggle Bit
= Toggle?
Reading Toggle Bits DQ6/DQ2
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Note: The system should recheck the toggle bit even if
DQ5 = “1” because the toggle bit may stop toggling as DQ5
changes to “1.” See the subsections on DQ6 and DQ2 for
more information.
Figure 9.
Toggle Bit Algorithm
Refer to Figure 9 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically,
the system would note and store the value of the toggle bit after the first read. After the second read, the
system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device
has completed the program or erase operation. The
system can read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the
program or erase operation. If it is still toggling, the device did not completed the operation successfully, and
the system must write the reset command to return to
reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor
the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform
26518C3 January 31, 2007
Am29LV320MT/B
37
D A T A
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 9).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program, erase, or
write-to-buffer time has exceeded a specified internal
pulse count limit. Under these conditions DQ5 produces a
“1,” indicating that the program or erase cycle was not successfully completed.
The device may output a “1” on DQ5 if the system tries
to program a “1” to a location that was previously programmed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the timing limit
has been exceeded, DQ5 produces a “1.”
In all these cases, the system must write the reset
command to return the device to the reading the array
(or to erase-suspend-read if the device was previously
in the erase-suspend-program mode).
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not
erasure has begun. (The sector erase timer does not
apply to the chip erase command.) If additional
sectors are selected for erasure, the entire time-out
also applies after each additional sector erase com-
Table 14.
Standard
Mode
Program
Suspend
Mode
Erase
Suspend
Mode
Write-toBuffer
S H E E T
mand. When the time-out period is complete, DQ3
switches from a “0” to a “1.” If the time between additional sector erase commands from the system can be
assumed to be less than 50 µs, the system need not
monitor DQ3. See also the Sector Erase Command
Sequence section.
After the sector erase command is written, the system
should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device has accepted
the command sequence, and then read DQ3. If DQ3 is
“1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the
device will accept additional sector erase commands.
To ensure the command has been accepted, the system software should check the status of DQ3 prior to
and following each subsequent sector erase command. If DQ3 is high on the second status check, the
last command might not have been accepted.
Table 14 shows the status of DQ3 relative to the other
status bits.
DQ1: Write-to-Buffer Abort
DQ1 indicates whether a Write-to-Buffer operation
was aborted. Under these conditions DQ1 produces a
“1”.
The
system
must
issue
the
Write-to-Buffer-Abort-Reset command sequence to return the device to reading array data. See Write Buffer
Write Operation Status
DQ7
Status
(Note 2)
Embedded Program Algorithm
DQ7#
Embedded Erase Algorithm
0
Program-Suspended
ProgramSector
Suspend
Non-Program
Read
Suspended Sector
Erase-Suspended
1
EraseSector
Suspend
Non-Erase Suspended
Read
Sector
Erase-Suspend-Program
DQ7#
(Embedded Program)
Busy (Note 3)
DQ7#
Abort (Note 4)
DQ7#
DQ6
Toggle
Toggle
No toggle
DQ5
(Note 1)
0
0
DQ3
N/A
1
DQ2
(Note 2)
No toggle
Toggle
DQ1
0
N/A
RY/BY#
0
0
Invalid (not allowed)
1
Data
1
0
N/A
Toggle
N/A
Data
1
1
Toggle
0
N/A
N/A
N/A
0
Toggle
Toggle
0
0
N/A
N/A
N/A
N/A
0
1
0
0
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has exceeded the
maximum timing limits. Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location.
4. DQ1 switches to ‘1’ when the device has aborted the write-to-buffer operation.
38
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –55°C to +125°C
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . –0.5 V to +4.0 V
20 ns
20 ns
+0.8 V
–0.5 V
–2.0 V
VIO . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to +4.0 V
20 ns
A9, OE#, ACC, and RESET#
(Note 2) . . . . . . . . . . . . . . . . . . . . –0.5 V to +12.5 V
Figure 10. Maximum Negative
Overshoot Waveform
All other pins (Note 1) . . . . . . –0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V.
Dur ing voltage transitions, input or I/O pins may
overshoot V SS to –2.0 V for periods of up to 20 ns.
Maximum DC voltage on input or I/O pins is VCC +0.5 V.
See Figure 10. During voltage transitions, input or I/O
pins may overshoot to VCC +2.0 V for periods up to 20 ns.
See Figure 11.
2. Minimum DC input voltage on pins A9, OE#, ACC, and
RESET# is –0.5 V. During voltage transitions, A9, OE#,
ACC, and RESET# may overshoot V SS to –2.0 V for
periods of up to 20 ns. See Figure 10. Maximum DC
input voltage on pin A9, OE#, ACC, and RESET# is
+12.5 V which may overshoot to +14.0 V for periods up
to 20 ns.
20 ns
VCC
+2.0 V
VCC
+0.5 V
2.0 V
20 ns
20 ns
Figure 11. Maximum Positive
Overshoot Waveform
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (TA) . . . . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C
Supply Voltages
VCC for full voltage range . . . . . . . . . . . . . . . 2.7–3.6 V
VCC for regulated voltage range . . . . . . . . . . 3.0–3.6 V
Note: Operating ranges define those limits between which
the functionality of the device is guaranteed.
26518C3 January 31, 2007
Am29LV320MT/B
39
D A T A
S H E E T
DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
(Notes)
Test Conditions
Min
Typ
Max
Unit
±1.0
µA
ILI
Input Load Current (1)
VIN = VSS to VCC,
VCC = VCC max
ILIT
A9, ACC Input Load Current
VCC = VCC max; A9 = 12.5 V
35
µA
ILR
Reset Leakage Current
VCC = VCC max; RESET# = 12.5 V
35
µA
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max
±1.0
µA
ICC1
VCC Active Read Current
(2, 3)
CE# = VIL, OE# = VIH,
ICC2
VCC Initial Page Read Current (2, 3)
CE# = VIL, OE# = VIH
ICC3
VCC Intra-Page Read Current (2, 3)
CE# = VIL, OE# = VIH
ICC4
VCC Active Write Current (3, 4)
ICC5
5 MHz
3
34
1 MHz
13
43
1 MHz
4
50
10 MHz
40
80
10 MHz
3
20
33 MHz
6
40
mA
CE# = VIL, OE# = VIH
50
60
mA
VCC Standby Current (3)
CE#, RESET# = VCC ± 0.3 V,
WP# = VIH
1
5
µA
ICC6
VCC Reset Current (3)
RESET# = VSS ± 0.3 V, WP# = VIH
1
5
µA
ICC7
Automatic Sleep Mode (3, 5)
VIH = VCC ± 0.3 V;
VIL = VSS ± 0.3 V, WP# = VIH
1
5
µA
VIL
Input Low Voltage (5)
– 0.5 V
0.8
V
VIH
Input High Voltage (5)
1.9 V
VCC + 0.5
V
VID
Voltage for Autoselect and Temporary
VCC = 2.7 –3.6 V
Sector Unprotect
11.5
12.5
V
VOL
Output Low Voltage
0.15 x VCC
V
VOH1
VOH2
VLKO
Output High Voltage
IOL = 4.0 mA, VCC = VCC min
mA
mA
IOH = –2.0 mA, VCC = VCC min
0.85 VCC
V
IOH = –100 µA, VCC = VCC min
VCC–0.4
V
Low VCC Lock-Out Voltage (6)
2.3
2.5
V
Notes:
1. On the WP#/ACC pin only, the maximum input load current when WP# = VIL is ± 5.0 µA.
2. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
3. Maximum ICC specifications are tested with VCC = VCCmax.
4. ICC active while Embedded Erase or Embedded Program is in progress.
5. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. VCC voltage requirements.
6. Not 100% tested.
40
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
TEST CONDITIONS
Table 15.
3.3 V
Test Condition
2.7 kΩ
Device
Under
Test
CL
Test Specifications
6.2 kΩ
All Speeds
Output Load
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
Input Pulse Levels
Note:
Diodes are IN3064 or equivalent
Figure 12.
Unit
Test Setup
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
3.0 V
Input
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
1.5 V
Measurement Level
1.5 V
Output
0.0 V
Figure 13. Input Waveforms and
Measurement Levels
26518C3 January 31, 2007
Am29LV320MT/B
41
D A T A
S H E E T
AC CHARACTERISTICS
Read-Only Operations
Parameter
Speed Options
JEDEC Std. Description
90R
95R
100R,
100
Min
90
95
100
110
120
ns
Test Setup
110R 110 120R
120 Unit
tAVAV
tRC Read Cycle Time (Note 1)
tAVQV
tACC Address to Output Delay
CE#,
OE# = VIL
Max
90
95
100
110
120
ns
tELQV
tCE Chip Enable to Output Delay
OE# = VIL
Max
90
95
100
110
120
ns
Max
25
30
30
30
40
30
40
ns
Max
25
30
30
30
40
30
40
ns
tPACC Page Access Time
tGLQV
tOE Output Enable to Output Delay
tEHQZ
tDF
Chip Enable to Output High Z
(Note 1)
Max
25
ns
tGHQZ
tDF
Output Enable to Output High Z
(Note 1)
Max
25
ns
tAXQX
Output Hold Time From
tOH Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
tOEH
Output Enable
Hold Time
(Note 1)
Notes:
1. Not 100% tested.
2. See Figure 12 and Table 15 for test specifications.
tRC
Addresses Stable
Addresses
tACC
CE#
tRH
tRH
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Figure 14.
42
Read Operation Timings
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
AC CHARACTERISTICS
Same Page
A21-A2
A1-A0
Aa
Ab
tPACC
tACC
Data Bus
Qa
Ad
Ac
tPACC
Qb
tPACC
Qc
Qd
CE#
OE#
* Figure shows word mode. Addresses are A1–A-1 for byte mode.
Figure 15.
26518C3 January 31, 2007
Page Read Timings
Am29LV320MT/B
43
D A T A
S H E E T
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std.
Description
All Speed Options
Unit
tReady
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note.)
Max
20
μs
tReady
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode (See Note.)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
Reset High Time Before Read (See Note.)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
μs
Note: Not 100% tested.
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Figure 16.
44
Reset Timings
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
AC CHARACTERISTICS
Erase and Program Operations
Parameter
Speed Options
90R
95R
100,
100R
110,
110R
120,
120R
Unit
90
95
100
110
120
ns
JEDEC
Std.
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# Low during Toggle
Bit Polling
Min
15
ns
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE#High
during Toggle Bit Polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
45
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOEPH
Output Enable High during Toggle Bit Polling
Min
20
ns
tGHWL
tGHWL
Read Recovery Time before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
Write Buffer Program Operation (Notes 2, 3)
Typ
240
µs
Per Byte
Typ
7.5
µs
Per Word
Typ
15
µs
Per Byte
Typ
6.25
µs
Per Word
Typ
12.5
µs
60
µs
60
µs
54
µs
54
µs
Typ
0.5
sec
tWLAX
Effective Write Buffer Program
Operation (Notes 2, 4)
tWHWH1
tWHWH1
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Byte
Single Word/Byte Program
Operation (Note 2, 5)
Typ
Word
Accelerated Single Word/Byte
Programming Operation (Note 2, 5)
tWHWH2
Byte
Typ
Word
tWHWH2 Sector Erase Operation (Note 2)
tVHH
VHH Rise and Fall Time (Note 1)
Min
250
ns
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tBUSY
WE# to RY/BY#
Max
tPOLL
Program Valid before Status Polling (Note 6)
Max
90
95
100
4
110
120
ns
µs
Notes:
1.
Not 100% tested.
5.
2.
See the Erase And Programming Performance section for more
information.
Word/Byte programming specification is based upon a single
word/byte programming operation not utilizing the write buffer.
6.
3.
For 1–16 words (or 1–32 bytes) programmed.
4.
Effective write buffer specification is based upon a 16-word (or
32-byte) write buffer operation.
When using the program suspend/resume feature, if the suspend
command is issued within tPOLL, tPOLL must be fully re-applied
upon resuming the programming operation. If the suspend
command is issued after tPOLL, tPOLL is not required again prior to
reading the status bits upon resuming.
26518C3 January 31, 2007
Am29LV320MT/B
45
D A T A
S H E E T
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
Read Status Data (last two cycles)
555h
PA
PA
PA
tAH
CE#
tCH
OE#
tPOLL
tWP
WE#
tWPH
tCS
tDS
tDH
PD
A0h
Data
tWHWH1
Status
tBUSY
DOUT
tRB
RY/BY#
VCC
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 17.
Program Operation Timings
VHH
ACC
VIL or VIH
VIL or VIH
tVHH
Figure 18.
46
tVHH
Accelerated Program Timing Diagram
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SA
VA
555h for chip erase
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status).
2. These waveforms are for the word mode.
Figure 19.
26518C3 January 31, 2007
Chip/Sector Erase Operation Timings
Am29LV320MT/B
47
D A T A
S H E E T
AC CHARACTERISTICS
tRC
Addresses
VA
tPOLL
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ0–DQ6
Status Data
Status Data
True
Valid Data
High Z
True
Valid Data
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 20. Data# Polling Timings (During Embedded Algorithms)
48
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
AC CHARACTERISTICS
tAHT
tAS
Addresses
tAHT
tASO
CE#
tCEPH
tOEH
WE#
tOEPH
OE#
tDH
DQ6/DQ2
tOE
Valid
Status
Valid
Status
Valid
Status
(first read)
(second read)
(stops toggling)
Valid Data
Valid Data
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status
read cycle, and array data read cycle
Figure 21.
Enter
Embedded
Erasing
WE#
Erase
Suspend
Erase
Toggle Bit Timings (During Embedded Algorithms)
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Suspend
Program
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle
DQ2 and DQ6.
Figure 22. DQ2 vs. DQ6
26518C3 January 31, 2007
Am29LV320MT/B
49
D A T A
S H E E T
AC CHARACTERISTICS
Temporary Sector Unprotect
Parameter
JEDEC
Std
Description
tVIDR
VID Rise and Fall Time (See Note.)
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
All Speed Options
Unit
Min
500
ns
Min
4
µs
Note: Not 100% tested.
VID
RESET#
VID
VSS, VIL,
or VIH
VSS, VIL,
or VIH
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRRB
tRSP
RY/BY#
Figure 23.
50
Temporary Sector Group Unprotect Timing Diagram
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
AC CHARACTERISTICS
VID
VIH
RESET#
SA, A6,
A1, A0
Valid*
Valid*
Sector Group Protect or Unprotect
Data
60h
60h
Valid*
Verify
40h
Status
Sector Group Protect: 150 µs,
Sector Group Unprotect: 15 ms
1 µs
CE#
WE#
OE#
* For sector group protect, A6–A0 = 0xx0010. For sector group unprotect, A6–A0 = 1xx0010.
Figure 24.
26518C3 January 31, 2007
Sector Group Protect and Unprotect Timing Diagram
Am29LV320MT/B
51
D A T A
S H E E T
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Parameter
Speed Options
90R
95R
100,
100R
110,
110R
120,
120R
Unit
90
95
100
110
120
ns
JEDEC
Std.
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
45
ns
tDVEH
tDS
Data Setup Time
Min
45
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
45
ns
tEHEL
tCPH
CE# Pulse Width High
Min
30
ns
Write Buffer Program Operation (Notes 2, 3)
Typ
240
µs
Per Byte
Typ
7.5
µs
Per Word
Typ
15
µs
Per Byte
Typ
6.25
µs
Per Word
Typ
12.5
µs
60
µs
60
µs
54
µs
54
µs
Typ
0.5
sec
RESET# High Time Before Write (Note 1)
Min
50
ns
Program Valid before Status Polling (Note 6)
Max
4
µs
Effective Write Buffer Program
Operation (Notes 2, 4)
tWHWH1
tWHWH1
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Single Word/Byte Program Operation
(Note 2, 5)
Accelerated Single Word/Byte
Programming Operation (Note 2, 5)
tWHWH2
Byte
Typ
Word
Byte
Typ
Word
tWHWH2 Sector Erase Operation (Note 2)
tRH
tPOLL
Notes:
1. Not 100% tested.
2. See the Erase And Programming Performance section for more information.
3. For 1–16 words (or 1–32 bytes in byte mode) programmed.
4. Effective write buffer specification is based upon a 16-word (or 32-byte) write buffer operation.
5. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
6. When using the program suspend/resume feature, if the suspend command is issued within tPOLL, tPOLL must be fully re-applied
upon resuming the programming operation. If the suspend command is issued after tPOLL, tPOLL is not required again prior to
reading the status bits upon resuming.
52
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
AC CHARACTERISTICS
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tPOLL
tGHEL
OE#
tWHWH1 or 2
tCP
CE#
tWS
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
4. Waveforms are for the word mode.
Figure 25.
26518C3 January 31, 2007
Alternate CE# Controlled Write (Erase/Program)
Operation Timings
Am29LV320MT/B
53
D A T A
S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Chip Erase Time
32
64
sec
Excludes 00h programming
prior to erasure (Note 6)
Single Word/Byte Program Time (Note 3)
60
600
µs
Accelerated Single Word/Byte Program Time (Note 3)
54
540
µs
Total Write Buffer Program Time (Note 4)
240
1200
µs
Per Byte
7.5
38
µs
Per Word
15
75
µs
200
1040
µs
Per Byte
6.25
33
µs
Per Word
12.5
65
µs
31.5
73
sec
Effective Write Buffer Program Time (Note 5)
Total Accelerated Write Buffer Program Time (Note 4)
Effective Accelerated Write Buffer Program Time
(Note 5)
Chip Program Time
Excludes system level
overhead (Note 7)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, Programming specification assume that
all bits are programmed to 00h.
2. Maximum values are measured at VCC = 3.0, worst case temperature. Maximum values are valid up to and including 100,000
program/erase cycles.
3. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
4. For 1-16 words or 1-32 bytes programmed in a single write buffer programming operation.
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence (s) for the program command. See Tables 12 and
13 for further information on command definitions.
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
–1.0 V
12.5 V
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
Input voltage with respect to VSS on all I/O pins
VCC Current
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
54
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
TSOP PIN AND BGA PACKAGE CAPACITANCE
Parameter Symbol
Parameter Description
CIN
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
Test Setup
VIN = 0
VOUT = 0
VIN = 0
Typ
Max
Unit
TSOP
6
7.5
pF
Fine-Pitch BGA
4.2
5.0
pF
TSOP
8.5
12
pF
Fine-Pitch BGA
5.4
6.5
pF
TSOP
7.5
9
pF
Fine-Pitch BGA
3.9
4.7
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Minimum Pattern Data Retention Time
26518C3 January 31, 2007
Am29LV320MT/B
55
D A T A
S H E E T
PHYSICAL DIMENSIONS
TS 048—48-Pin Standard Pinout Thin Small Outline Package (TSOP)
Dwg rev AA; 10/99
56
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
PHYSICAL DIMENSIONS
FBC048—48-Ball Fine-pitch Ball Grid Array (BGA) 9 x 8 mm Package
FBC 048
Dwg rev AF; 10/99
26518C3 January 31, 2007
Am29LV320MT/B
57
D A T A
S H E E T
PHYSICAL DIMENSIONS
LAA064—64-Ball Fortified Ball Grid Array (BGA) 13 x 11 mm Package
58
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
REVISION SUMMARY
Revision A (June 21, 2002)
Revision A+3 (November 19, 2002)
Initial release.
Product Selector Guide and Read Only Operations
Revision A+1 (August 9, 2002)
Changed the page access times and TOE
Moved the reverse speed options up into correct row.
MirrorBit 64 Mb Device Family
Added 64 Fortified BGA to LV640MU device.
Changed VCC range for full speed option to 2.7-3.6.
Alternate CE# Controlled Erase and Program
Operations
Ordering Information and Physical Dimensions
Added tRH parameter to table.
Added FBC048 package.
Erase and Program Operations
Added TS048 package.
Added tBUSY parameter to table.
Changed order numbers and package markings to reflect new package.
CMOS Compatable
Deleted the IACC specification row in DC Characteristics table.
Figure 16. Program Operation Timings
Removed FBD048 package.
Table 7. Secured Silicon Sector Contents
Changed the x8 Secured Silicon Sector Address
range to 000010h–0000FFh.
Customer Lockable: Secured Silicon Sector NOT
Programmed or Protected at the factory.
Added RY/BY# to waveform.
TSOP and BGA PIN Capacitance
Added second bullet, Secured Silicon sector-protect
verify text and figure 3.
Added the FBGA package.
Program Suspend/Program Resume Command
Sequence
Changed 15 μs typical to maximum and added 5 μs
typical.
Erase Suspend/Erase Resume Commands
Changed typical from 20 μs to 5 μs and added a maximum of 20 μs.
Mirrorbit 32 Mbit Device Family
Changed 48-pin TSOP to 40-pin TSOP.
Product Selector Guide, Valid Combinations Table,
Read-Only Operations, Erase and Program
Operations and Alternate CE# Controlled Erase
and Program Operations
Secured Silicon Sector Flash Memory Region, and
Enter Secured Silicon Sector/Exit Secured Silicon
Sector Command Sequence
Noted that the ACC function and unlock bypass modes
are not available when the Secured Silicon sector is enabled.
Byte/Word Program Command Sequence, Sector
Erase Command Sequence, and Chip Erase Command Sequence
Noted that the Secured Silicon Sector, autoselect,
and CFI functions are unavailable when a program
or erase operation is in progress.”
Common Flash Memory Interface (CFI)
Changed wording in last sentence of third paragraph
from, “...the autoselect mode.” to “...reading array
data.”
Added regulated OPN to table.
Common Flash Memory Interface
Changed the text in the third paragraph to end with”...
reading array data.”
Changed CFI website address.
Erase and Programming Performance
Command Definitions
Modified the last sentences in the first paragraph.
Revision A+2 (September 19, 2002)
Changed the typicals and/or maximums of the Chip
Erase Time, Effective Write Buffer Program Time,
Byte/Word Program Time, and Accelerated Effective
Program Time to TBD.
Distinctive Characteristics
Changed the flexible sector architecture from
Sixty-four 32 Kword/64-Kbyte sectors to Sixty-three 32
Kword/64-Kbyte sectors.
26518C3 January 31, 2007
Revision A+4 (February 16, 2003)
Distinctive Characteristics
Corrected performance characteristics.
Am29LV320MT/B
59
D A T A
S H E E T
Product Selector Guide
Table 1, Device Bus Operations
Added note 2.
Replaced don’t cares with high/low input in ACC column.
Ordering Information
Erase Suspend/Erase Resume Commands
Corrected Valid Combinations table.
Added Note.
AC Characteristics
Input values in the tWHWH1 and tWHWH2 parameters in
the Erase and Program Options table that were previously TBD. Also, added note 5.
Input values in the tWHWH1 and tWHWH2 parameters in
the Alternate CE# Controlled Erase and Program Options table that were previously TBD. Also, added note
5.
Erase and Programming Performance
Input values into table that were previously TBD.
Added note 3 and 4
Revision B (May 16, 2003)
Clarified that address of the erase-suspended sector
is not required for this command. Added note to clarify
behavior of the device when given erase suspend/resume commands in rapid succession.
Tables 12 and 13, Command Definitions
Corrected address requirement for erase suspend and
erase resume commands. Addresses are don’t care.
AC Characteristics
Erase and Program Operations table: Added t POLL
specification.
Added tPOLL timing to Figure 17, Program Operation
Timings; Figure 20, Data# Polling Timings (During
Embedded Algorithms); and Figure 25, Alternate CE#
Controlled Write (Erase/Program) Operation Timings.
Trademarks
Distinctive Characteristics
Updated.
Added typical active read current
Revision C + 1 (May 4, 2004)
Global
Command Definitions table
Converted to full data sheet version.
Modified Secured Silicon Sector Flash Memory Region section to include ESN references.
Corrected information in the first, second, and third
bus cycles for the Program Command sequence.
Cover Sheet and Title page
CMOS Compatible
Corrected Typ and Max values for the ICC 1, 2, and 3.
Added notation referencing superseding documentation.
Erase and Program Operations and Alternate CE#
Controlled Erase and Program Operations
Revision C+2 (December 13, 2005)
Changed Accelerated Effective Write Buffer Program
Operation value.
Erase and Programming Performance
Input values into table that were previously TBD.
Modified notes.
Removed Word references.
Revision C (February 12, 2004)
Global
This product has been retired and is not available for
designs. For new and current designs, S29GL032A
supersedes Am29LV320MT/B and is the factory-recommended migration path. Please refer to the
S29GL032A datasheet for specifications and ordering
information. Availability of this document is retained for
reference and historical purposes only.
Revision C3 (January 31, 2007)
Global
Global
Added 95R speed option.
Changed SecSi Sector to Secured Silicon Sector.
Related Documents
AC Characteristics
Added URL for MirrorBit web content. Deleted list of
application notes.
Erase and Program Operations table: Changed tBUSY
to a maximum specification.
Ordering Information
Added commercial temperature to 90R speed options
for FBC048 package.
60
Am29LV320MT/B
26518C3 January 31, 2007
D A T A
S H E E T
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion Inc. will not be liable
to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating
conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign
Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products.
Trademarks
Copyright © 2002–2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are
for identification purposes only and may be trademarks of their respective companies.
Copyright © 2006–2007 Spansion Inc. All Rights Reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations
thereof are trademarks of Spansion Inc. Other names are for informational purposes only and may be trademarks of their respective owners.
26518C3 January 31, 2007
Am29LV320MT/B
61