ON NVR5124PLT1G Power mosfet Datasheet

NVR5124PL
Power MOSFET
−60 V, −1.1 A, 230 mW, Single P−Channel
SOT−23 Package
Features
• Trench Technology
• NVR Prefix for Automotive and Other Applications Requiring
•
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Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
V(BR)DSS
RDS(on) MAX
ID MAX
230 mW @ −10 V
−60 V
−1.1 A
365 mW @ −4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−60
V
Gate−to−Source Voltage
VGS
±20
V
ID
−1.1
A
Continuous Drain Current RqJA (Notes 1, 2,
3)
Power Dissipation
RqJA (Notes 1, 2)
Pulsed Drain Current
TA = 25°C
Steady
State
TA = 100°C
TA = 25°C
PD
−0.47
0.19
−2.5
A
TJ, Tstg
−55 to
+150
°C
Source Current (Body Diode)
IS
−0.6
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
MARKING DIAGRAM/
PIN ASSIGNMENT
Drain
3
1
2
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Junction−to−Ambient − Steady State (Note 2)
S
3
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Parameter
G
W
IDM
Operating Junction and Storage Temperature
D
−0.67
TA = 100°C
TA = 25°C, tp = 10 ms
P−Channel
Symbol
Value
Unit
RqJA
268
°C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
SOT−23
CASE 318
STYLE 21
V24
M
G
V24 MG
G
1
Gate
2
Source
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NVR5124PLT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
October, 2016 − Rev. 1
1
Publication Order Number:
NVR5124PL/D
NVR5124PL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = −250 mA
−60
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = −60 V
TJ = 25°C
−1.0
TJ = 125°C
−10
IGSS
VDS = 0 V, VGS = "20 V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = −250 mA
Drain−to−Source On Resistance
RDS(on)
VGS = −10 V, ID = −3 A
Gate−to−Source Leakage Current
V
mA
"100
nA
−2.5
V
183
230
mW
280
365
ON CHARACTERISTICS (Note 4)
−1.5
VGS = −4.5 V, ID = −3 A
Forward Transconductance
gFS
VDS = −15 V, ID = −5 A
4
S
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
240
VGS = 0 V, f = 1.0 MHz,
VDS = −25 V
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
18.5
Total Gate Charge
QG(TOT)
2.3
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = −4.5 V, VDS = −48 V,
ID = −3 A
27.6
pF
0.5
0.9
nC
1.0
VGS = −10 V, VDS = −48 V,
ID = −3 A
4.3
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
6.6
VGS = −4.5 V, VDS = −48 V,
ID = −3 A, RG = 2.5 W
tf
10.6
ns
12.2
3.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = −3 A
TJ = 25°C
−0.88
TJ = 125°C
−0.76
tRR
ta
tb
15
VGS = 0 V,
dIS/dt = 100 A/ms,
IS = −3 A
QRR
−1.0
V
ns
13
2.4
10
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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NVR5124PL
TYPICAL CHARACTERISTICS
5.0
5.0
TJ = 25°C
4.0
VGS = −4.4 V to −10 V
3.5
−3.6 V
3.0
2.5
2.0
−3.2 V
1.5
1.0
4.0
3.5
3.0
2.5
2.0
0.5
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ = 25°C
1.5
1.0
VGS = −2.8 V
0.0
0.0
VDS = −10 V
4.5
−4.0 V
−ID, DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
4.5
0.5
TJ = 125°C
0.0
0.0
4.5
350
ID = −3 A
TJ = 25°C
325
300
275
250
225
200
175
150
2
3
4
5
6
7
8
9
10
−VGS, GATE−TO−SOURCE VOLTAGE (V)
350
VGS = −4.5 V
300
275
250
VGS = −10 V
225
200
175
150
2
3
4
5
6
7
8
9
10
−ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
2.0
VGS = 0 V
VGS = −10 V
ID = −3 A
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = 25°C
325
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.8
4.5
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
Figure 1. On−Region Characteristics
TJ = −55°C
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
−VGS, GATE−TO−SOURCE VOLTAGE (V)
1.6
1.4
1.2
1.0
TJ = 150°C
1000
100
TJ = 125°C
0.8
0.6
−50
10
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
150
10
Figure 5. On−Resistance Variation with
Temperature
20
30
40
50
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NVR5124PL
TYPICAL CHARACTERISTICS
−VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
1000
VGS = 0 V
TJ = 25°C
f = 1 MHz
Ciss
100
Coss
Crss
10
0
10
20
30
40
50
60
9
8
7
6
5
4
Qgd
Qgs
3
VDS = −48 V
ID = −3 A
TJ = 25°C
2
1
0
0.5
0
1
1.5
2
2.5
3
3.5
4
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
4.5
10
100
−IS, SOURCE CURRENT (A)
VGS = 0 V
VGS = −4.5 V
VDS = −48 V
ID = −3 A
tf
td(off)
tr
10
td(on)
1
1
10
1
TJ = 125°C
TJ = 25°C
0.1
0.4
100
0.5
0.6
0.7
0.8
TJ = −55°C
0.9
RG, GATE RESISTANCE (W)
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 11. Diode Forward Voltage vs. Current
10
−ID, DRAIN CURRENT (A)
t, TIME (ns)
10
1
VGS = −10 V
Single Pulse
TC = 25°C
10 ms
100 ms
1 ms
0.1
10 ms
0.01
RDS(on) Limit
Thermal Limit
Package Limit
0.001
0.1
1
10
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
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4
100
1.0
NVR5124PL
TYPICAL CHARACTERISTICS
1000
Duty Cycle = 0.5
RqJA(t) (°C/W)
100
0.2
0.1
0.05
10
0.02
0.01
1
Single Pulse
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 12. Thermal Response
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5
1
10
100
1000
NVR5124PL
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NVR5124PL/D