Vishay P4SMA47A Surface mount transzorbâ® transient voltage suppressor Datasheet

P4SMA Series
www.vishay.com
Vishay General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 % (300 W above 91 V)
• Excellent clamping capability
• Very fast response time
DO-214AC (SMA)
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VWM
6.4 V to 459 V
TYPICAL APPLICATIONS
VBR (uni-directional)
6.8 V to 540 V
VBR (bi-directional)
6.8 V to 220 V
PPPM
400 W, 300 W
PD
3.3 W
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
IFSM (uni-directional only)
40 A
TJ max.
150 °C
Polarity
Uni-directional, bi-directional
Package
DO-214AC (SMA)
MECHANICAL DATA
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. P4SMA10CA).
Electrical characteristics apply in both directions.
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant and commercial grade
Base P/NHE3 - RoHS compliant and AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak power dissipation with a 10/1000 μs waveform
Peak pulse current with a 10/1000 μs waveform
(1)
(1)(2)
(fig. 1)
(fig. 3)
Power dissipation on infinite heatsink at TA = 50 °C
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
SYMBOL
VALUE
UNIT
PPPM
400
W
IPPM
See next table
A
PD
3.3
W
IFSM
40
A
TJ, TSTG
- 65 to + 150
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2. Rating is 300 W above 91 V
A
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
Revision: 13-Dec-12
Document Number: 88367
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P4SMA Series
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ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PART
NUMBER
DEVICE
MARKING
CODE
UNI
BI
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
MIN.
MAX.
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
P4SMA6.8A 6V8A 6V8C 6.45
7.14
10
5.80
P4SMA7.5A 7V5A 7V5C 7.13
7.88
10
6.40
P4SMA8.2A 8V2A 8V2C 7.79
8.61
10
7.02
P4SMA9.1A 9V1A 9V1C 8.65
9.55
1.0
7.78
P4SMA10A
10A 10C
9.5
10.5
1.0
8.55
P4SMA11A
11A 11C
10.5
11.6
1.0
9.40
P4SMA12A
12A 12C
11.4
12.6
1.0
10.2
P4SMA13A
13A 13C
12.4
13.7
1.0
11.1
P4SMA15A
15A 15C
14.3
15.8
1.0
12.8
P4SMA16A
16A 16C
15.2
16.8
1.0
13.6
P4SMA18A
18A 18C
17.1
18.9
1.0
15.3
P4SMA20A
20A 20C
19.0
21.0
1.0
17.1
P4SMA22A
22A 22C
20.9
23.1
1.0
18.8
P4SMA24A
24A 24C
22.8
25.2
1.0
20.5
P4SMA27A
27A 27C
25.7
28.4
1.0
23.1
P4SMA30A
30A 30C
28.5
31.5
1.0
25.6
P4SMA33A
33A 33C
31.4
34.7
1.0
28.2
P4SMA36A
36A 36C
34.2
37.8
1.0
30.8
P4SMA39A
39A 39C
37.1
41.0
1.0
33.3
P4SMA43A
43A 43C
40.9
45.2
1.0
36.8
P4SMA47A
47A 47C
44.7
49.4
1.0
40.2
P4SMA51A
51A 51C
48.5
53.6
1.0
43.6
P4SMA56A
56A 56C
53.2
58.8
1.0
47.8
P4SMA62A
62A 62C
58.9
65.1
1.0
53.0
P4SMA68A
68A 68C
64.6
71.4
1.0
58.1
P4SMA75A
75A 75C
71.3
78.8
1.0
64.1
P4SMA82A
82A 82C
77.9
86.1
1.0
70.1
P4SMA91A
91A 91C
86.5
95.5
1.0
77.8
P4SMA100A 100A 100C 95.0
105
1.0
85.5
P4SMA110A 110A 110C 105
116
1.0
94.0
P4SMA120A 120A 120C 114
126
1.0
102
P4SMA130A 130A 130C 124
137
1.0
111
P4SMA150A 150A 150C 143
158
1.0
128
P4SMA160A 160A 160C 152
168
1.0
136
P4SMA170A 170A 170C 162
179
1.0
145
P4SMA180A 180A 180C 171
189
1.0
154
P4SMA200A 200A 200C 190
210
1.0
171
P4SMA220A 220A 220C 209
231
1.0
185
P4SMA250A 250A
237
263
1.0
214
P4SMA300A 300A
285
315
1.0
256
P4SMA350A 350A
333
368
1.0
300
P4SMA400A 400A
380
420
1.0
342
P4SMA440A 440A
418
462
1.0
376
P4SMA480A 480A
456
504
1.0
408
P4SMA510A 510A
485
535
1.0
434
P4SMA540A 540A
513
567
1.0
459
Notes
(1) Pulse test: t  50 ms
p
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE CA62.35
(4) For bi-directional types with V of 10 V and less, the I limit is doubled
R
D
(5) V = 3.5 V at I = 25 A (uni-directional only)
F
F
Revision: 13-Dec-12
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (4)
(μA)
1000
500
200
50
10
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK
PULSE
CURRENT
IPPM (2)
(A)
38.1
35.4
33.1
29.9
27.6
25.6
24.0
22.0
18.9
17.8
15.9
14.4
13.1
12.0
10.7
9.7
8.8
8.0
7.4
6.7
6.2
5.7
5.2
4.7
4.3
3.9
3.5
3.2
2.2
2.0
1.8
1.7
1.4
1.4
1.3
1.2
1.1
0.9
0.87
0.73
0.62
0.55
0.50
0.46
0.43
0.41
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
MAXIMUM
TEMPERATURE
COEFFICIENT
OF VBR
(%/°C)
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
104
113
125
137
152
165
179
207
219
234
246
274
328
344
414
482
548
602
658
698
740
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.089
0.090
0.092
0.090
0.096
0.097
0.098
0.099
0.100
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.106
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Document Number: 88367
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P4SMA Series
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Typical thermal resistance, junction to ambient air (1)
RJA
120
Typical thermal resistance, junction to lead
RJL
30
UNIT
°C/ W
Note
(1) Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)Voltage range
VOLTAGE RANGE
(V)
UNIT WEIGHT
(g)
PREFERRED P/N
P4SMA6.8A-E3/61
P4SMA6.8A-E3/5A
PACKAGE
CODE
BASE
QUANTITY
DELIVERY MODE
UNI -
BI -
0.064
6.8 to 540
6.8 to 220
61
1800
7" diameter plastic tape and reel
5A
7500
13" diameter plastic tape and reel
0.064
6.8 to 540
6.8 to 220
(1)
0.064
6.8 to 540
6.8 to 220
61
1800
7" diameter plastic tape and reel
P4SMA6.8AHE3/5A (1)
0.064
6.8 to 540
6.8 to 220
5A
7500
13" diameter plastic tape and reel
P4SMA250AHE3_A/H (1)
0.064
250 to 540
-
H
1800
7" diameter plastic tape and reel
0.064
250 to 540
-
I
7500
13" diameter plastic tape and reel
P4SMA6.8AHE3/61
P4SMA250AHE3_A/I
(1)
Note
AEC-Q101 qualified
(1)
PPPM - Peak Pulse Power (kW)
100
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
10
P4SMA6.8A P4SMA91A
P4SMA100A P4SMA220A
1
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
75
50
25
0
0
25
50
75
100
125
150
175
200
td - Pulse Width (s)
TJ - Initial Temperature (°C)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Revision: 13-Dec-12
Document Number: 88367
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P4SMA Series
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Peak Value
IPPM
100
200
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
Peak Forward Surge Current (A)
IPPM - Peak Pulse Current, % IRSM
150
Vishay General Semiconductor
Half Value - IPP
2
IPPM
50
10/1000 µs Waveform
as defined by R.E.A.
TJ = TJ max.
8.3 ms Single Half Sine-Wave
100
50
td
0
1.0
0
3.0
2.0
4.0
10
1
5
10
50
100
t - Time (ms)
Number of Cycles at 60 Hz
Fig. 3 - Pulse Waveform
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Uni-Directional Use Only
CJ - Junction Capacitance (pF)
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at
Stand-Off
Voltage VWM
1000
Uni-Directional
100
Bi-Directional
10
1
10
100
200
VBR - Breakdown Voltage (V)
Fig. 4 - Typical Junction Capacitance
Transient Thermal Impedance (°C/W)
1000
100
10
1
0.001
0.01
0.1
1
10
100
1000
tp - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
Revision: 13-Dec-12
Document Number: 88367
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P4SMA Series
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 13-Dec-12
Document Number: 88367
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000