256MB, 512MB Unbuffered SODIMM
DDR SDRAM
DDR SDRAM Unbuffered Module
184pin Unbuffered Module based on 512Mb C-die
66 TSOP-II with Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.2 June 2005
256MB, 512MB Unbuffered SODIMM
DDR SDRAM
Table of Contents
1.0 Ordering Information................................................................................................................... 4
2.0 Operating Frequencies................................................................................................................ 4
3.0 Feature.......................................................................................................................................... 4
4.0 Pin Configuration (Front side/back side) ................................................................................. 5
5.0 Pin Description ............................................................................................................................ 5
6.0 Functional Block Diagram .......................................................................................................... 6
6.1 256MB, 32M x 64 Non ECC Module (M470L3324CU0) ........................................................................ 6
6.2 512MB, 64M x 64 Non ECC Module (M470L6524CU0).......................................................................................7
7.0 Absolute Maximum Ratings........................................................................................................ 8
8.0 DC Operating Conditions............................................................................................................ 8
9.0 DDR SDRAM IDD spec table ....................................................................................................... 9
9.1 M470L3324CU0 [ (32M x 16) * 4, 256MB Non ECC Module ] ..................................................................................... 9
9.2 M470L6524CU0 [ (32M x 16) * 8, 512MB Non ECC Module ] ...................................................................................... 9
10.0 AC Operating Conditions........................................................................................................ 10
11.0 Input/Output Capacitance ....................................................................................................... 10
12.0 AC Timming Parameters & Specifications ............................................................................ 11
13.0 System Characteristics for DDR SDRAM .............................................................................. 12
14.0 Component Notes.................................................................................................................... 13
15.0 System Notes ........................................................................................................................... 14
16.0 Command Truth Table............................................................................................................. 15
17.0 Physical Dimensions............................................................................................................... 16
17.1 32Mx64 (M470L3324CU0) ......................................................................................................... 16
17.2 64Mx64 (M470L6524CU0) ......................................................................................................... 17
Rev. 1.2 June 2005
256MB, 512MB Unbuffered SODIMM
DDR SDRAM
Revision History
Revision
Month
Year
History
0.0
April
2004
- First version for internal review
0.1
September
2004
- Preliminary spec release.
0.2
October
2004
- Changed IDD current.
1.0
February
2005
- Revision 1.0 spec release.
1.1
April
2005
- Added notice.
1.2
June
2005
- Changed master format.
Rev. 1.2 June 2005
256MB, 512MB Unbuffered SODIMM
DDR SDRAM
200Pin Unbuffered SODIMM based on 512Mb C-die (x8, x16)
1.0 Ordering Information
Part Number
Density
Organization
Component Composition
Height
M470L3324CU0-C(L)CC/B3/A2/B0
256MB
32M x 64
32Mx16 (K4H511638C) * 4EA
1,250mil
M470L6524CU0-C(L)CC/B3/A2/B0
512MB
64M x 64
32Mx16 (K4H511638C) * 8EA
1,250mil
2.0 Operating Frequencies
CC(DDR400@CL=3)
B3(DDR333@CL=2.5)
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
Speed @CL2
-
133MHz
133MHz
100MHz
Speed @CL2.5
166MHz
166MHz
133MHz
133MHz
Speed @CL3
200MHz
-
-
-
CL-tRCD-tRP
3-3-3
2.5-3-3
2-3-3
2.5-3-3
3.0 Feature
• VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe [DQ] (x4,x8) & [L(U)DQS] (x16)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height - 256MB(non ECC/ECC SS, 1250mil), 512MB/1GB(non ECC DS, 1250mil, ECC DS, 1400mil)
• SSTL_2 Interface
• 66pin TSOP II Pb-Free package
• RoHS compliant
Rev. 1.2 June 2005
256MB, 512MB Unbuffered SODIMM
DDR SDRAM
4.0 Pin Configuration (Front side/back side)
Pin
Front
Pin
Front
Pin
Front
Pin
Back
Pin
Back
Pin
Back
1
VREF
67
DQ27
135
DQ34
2
VREF
68
DQ31
136
DQ38
3
VSS
69
VDD
137
VSS
4
VSS
70
VDD
138
VSS
5
DQ0
71
CB0
139
DQ35
6
DQ4
72
CB4
140
DQ39
7
DQ1
73
CB1
141
DQ40
8
DQ5
74
CB5
142
DQ44
9
VDD
75
VSS
143
VDD
10
VDD
76
VSS
144
VDD
11
DQS0
77
DQS8
145
DQ41
12
DM0
78
DM8
146
DQ45
13
DQ2
79
CB2
147
DQS5
14
DQ6
80
CB6
148
DM5
15
VSS
81
VDD
149
VSS
16
VSS
82
VDD
150
VSS
17
DQ3
83
CB3
151
DQ42
18
DQ7
84
CB7
152
DQ46
19
DQ8
85
DU
153
DQ43
20
DQ12
86
*DU/(RESET)
154
DQ47
21
VDD
87
VSS
155
VDD
22
VDD
88
VSS
156
VDD
23
DQ9
89
CK2
157
VDD
24
DQ13
90
VSS
158
CK1
25
DQS1
91
CK2
159
VSS
26
DM1
92
VDD
160
CK1
27
VSS
93
VDD
161
VSS
28
VSS
94
VDD
162
VSS
29
DQ10
95
CKE1
163
DQ48
30
DQ14
96
CKE0
164
DQ52
31
DQ11
97
DU
165
DQ49
32
DQ15
98
*DU(BA2)
166
DQ53
33
VDD
99
A12
167
VDD
34
VDD
100
A11
168
VDD
35
CK0
101
A9
169
DQS6
36
VDD
102
A8
170
DM6
DQ54
37
CK0
103
VSS
171
DQ50
38
VSS
104
VSS
172
39
VSS
105
A7
173
VSS
40
VSS
106
A6
174
VSS
107
A5
175
DQ51
108
A4
176
DQ55
DQ60
KEY
KEY
41
DQ16
109
A3
177
DQ56
42
DQ20
110
A2
178
43
DQ17
111
A1
179
VDD
44
DQ21
112
A0
180
VDD
45
VDD
113
VDD
181
DQ57
46
VDD
114
VDD
182
DQ61
47
DQS2
115
A10/AP
183
DQS7
48
DM2
116
BA1
184
DM7
49
DQ18
117
BA0
185
VSS
50
DQ22
118
RAS
186
VSS
51
VSS
119
WE
187
DQ58
52
VSS
120
CAS
188
DQ62
53
DQ19
121
CS0
189
DQ59
54
DQ23
122
CS1
190
DQ63
55
DQ24
123
*DU(A13)
191
VDD
56
DQ28
124
DU
192
VDD
57
VDD
125
VSS
193
SDA
58
VDD
126
VSS
194
SA0
59
DQ25
127
DQ32
195
SCL
60
DQ29
128
DQ36
196
SA1
61
DQS3
129
DQ33
197
VDDSPD
62
DM3
130
DQ37
198
SA2
63
VSS
131
VDD
199
VDDID
64
VSS
132
VDD
200
DU
65
DQ26
133
DQS4
66
DQ30
134
DM4
Note :
1. * : These pins are not used in this module.
2. Pins 71, 72, 73, 74, 77, 78, 79, 80, 83, 84 are not used on x64(M470~ ) module, & used on x72(M485 ~ ) module.
3. Pins 95,122 are NC for 1Row module & used for 2Row moule(M470L6524CU0,M485L2829CU0).
5.0 Pin Description
Pin Name
Function
Pin Name
A0 ~ A12
Address input (Multiplexed)
BA0 ~ BA1A
Bank Select Address
DQ0 ~ DQ63
Data input/output
DQS0 ~ DQS8
Data Strobe input/output
CK0,CK0 ~ CK2, CK2
Clock input
CKE0, CKE1(for double banks)
Clock enable input
CS0, CS1(for double banks)
Chip select input
RAS
Row address strobe
CAS
Column address strobe
SA0 ~ 2
WE
Write enable
VDDID
CB0 ~ CB7(for x72 module)
Check bit(Data-in/data-out)
Function
DM0 ~7,8(for ECC) Data - in mask
VDD
Power supply
(2.5V for DDR266/333, 2.6V for DDR400)
VDDQ
Power Supply for DQS
(2.5V for DDR266/333, 2.6V for DDR400)
VSS
VREF
VDDSPD
Ground
Power supply for reference
Serial EEPROM Power/Supply ( 2.3V to 3.6V )
SDA
Serial data I/O
SCL
Serial clock
NC
Address in EEPROM
VDD, VDDQ level detection
No connection
Note : VDDID defines relationship of VDD and VDDQ, and the default status of it is open (VDD=VDDQ)
Rev. 1.2 June 2005
256MB, 512MB Unbuffered SODIMM
DDR SDRAM
6.0 Functional Block Diagram
6.1 256MB, 32M x 64 Non ECC Module (M470L3324CU0)
(Populated as 1 bank of x16 DDR SDRAM Module)
CS0
DQS0
DM0
DQ 0
DQ 1
DQ 2
DQ 3
DQ 4
DQ 5
DQ 6
DQ 7
LDQS
LDM
I/0 15
I/0 14
I/0 13
I/0 12
I/0 8
I/0 9
I/0 10
I/0 11
DQS1
DM1
DQ 8
DQ 9
DQ 10
DQ 11
DQ 12
DQ 13
DQ 14
DQ 15
UDQS
UDM
I/0 3
I/0 2
I/0 1
I/0 0
I/0 4
I/0 5
I/0 6
I/0 7
DQS2
DM2
DQ 16
DQ 17
DQ 18
DQ 19
DQ 20
DQ 21
DQ 22
DQ 23
LDQS
LDM
I/0 15
I/0 14
I/0 13
I/0 12
I/0 8
I/0 9
I/0 10
I/0 11
DQS3
DM3
DQ 24
DQ 25
DQ 26
DQ 27
DQ 28
DQ 29
DQ 30
DQ 31
UDQS
UDM
I/0 3
I/0 2
I/0 1
I/0 0
I/0 4
I/0 5
I/0 6
I/0 7
CS
D0
CS
D1
BA0 - BA1
BA0-BA1: DDR SDRAMs D0 - D3
A0 - A12
A0-A12: DDR SDRAMs D0 - D3
RAS
RAS: SDRAMs D0 - D3
CAS
CAS: SDRAMs D0 - D3
CKE0
CKE: SDRAMs D0 - D3
WE
WE: SDRAMs D0 - D3
VDDSPD
DQS4
DM4
DQ 32
DQ 33
DQ 34
DQ 35
DQ 36
DQ 37
DQ 38
DQ 39
LDQS
LDM
I/0 15
I/0 14
I/0 13
I/0 12
I/0 8
I/0 9
I/0 10
I/0 11
DQS5
DM5
DQ 40
DQ 41
DQ 42
DQ 43
DQ 44
DQ 45
DQ 46
DQ 47
UDQS
UDM
I/0 3
I/0 2
I/0 1
I/0 0
I/0 4
I/0 5
I/0 6
I/0 7
DQS6
DM6
DQ 48
DQ 49
DQ 50
DQ 51
DQ 52
DQ 53
DQ 54
DQ 55
LDQS
LDM
I/0 15
I/0 14
I/0 13
I/0 12
I/0 8
I/0 9
I/0 10
I/0 11
DQS7
DM7
DQ 56
DQ 57
DQ 58
DQ 59
DQ 60
DQ 61
DQ 62
DQ 63
UDQS
UDM
I/0 3
I/0 2
I/0 1
I/0 0
I/0 4
I/0 5
I/0 6
I/0 7
CS
D2
CS
D3
D0/D2/Cap
R=120Ω
± 5%
Clock Wiring
Clock
Input
CK0/CK0
CK1/CK1
CK2/CK2
SDRAMs
2 SDRAMs
2 SDRAMs
NC
Cap/Cap/Cap
CK0/1/2
CK0/1/2
Card
Edge
D1/D3/Cap
Cap/Cap/Cap
SPD
VDD/VDDQ
D0 - D3
VREF
D0 - D3
SCL
VSS
D0 - D3
WP
D0 - D3
Serial PD
A0
A1
A2
SA0
SA1
SA2
Notes:
1. DQ-to-I/O wiring is shown as recommended but may be changed.
2. DQ/DQS/DM/CKE/CS relationships must
SDA be maintained as shown.
3. DQ, DQS, DM/DQS resistors: 22 Ohms.
Rev. 1.2 June 2005
256MB, 512MB Unbuffered SODIMM
DDR SDRAM
6.2 512MB, 64M x 64 Non ECC Module (M470L6524CU0)
(Populated as 2 bank of x16 DDR SDRAM Module)
CS1
CS0
DQS0
DM0
DQ 0
DQ 1
DQ 2
DQ 3
DQ 4
DQ 5
DQ 6
DQ 7
LDQS
LDM
I/0 15
I/0 14
I/0 13
I/0 12
I/0 11
I/0 10
I/0 9
I/0 8
DQS1
DM1
DQ 8
DQ 9
DQ 10
DQ 11
DQ 12
DQ 13
DQ 14
DQ 15
UDQS
UDM
I/0 7
I/0 6
I/0 5
I/0 4
I/0 3
I/0 2
I/0 1
I/0 0
DQS2
DM2
DQ 16
DQ 17
DQ 18
DQ 19
DQ 20
DQ 21
DQ 22
DQ 23
LDQS
LDM
I/0 15
I/0 14
I/0 13
I/0 12
I/0 11
I/0 10
I/0 9
I/0 8
DQS3
DM3
DQ 24
DQ 25
DQ 26
DQ 27
DQ 28
DQ 29
DQ 30
DQ 31
UDQS
UDM
I/0 7
I/0 6
I/0 5
I/0 4
I/0 3
I/0 2
I/0 1
I/0 0
CS
D0
LDQS
LDM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
CS
D4
UDQS
UDM
I/0 8
I/0 9
I/0 10
I/0 11
I/0 12
I/0 13
I/0 14
I/0 15
CS
D1
LDQS
LDM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
CS
D5
UDQS
UDM
I/0 8
I/0 9
I/0 10
I/0 11
I/0 12
I/0 13
I/0 14
I/0 15
DQS4
DM4
DQ 32
DQ 33
DQ 34
DQ 35
DQ 36
DQ 37
DQ 38
DQ 39
LDQS
LDM
I/0 15
I/0 14
I/0 13
I/0 12
I/0 11
I/0 10
I/0 9
I/0 8
DQS5
DM5
DQ 40
DQ 41
DQ 42
DQ 43
DQ 44
DQ 45
DQ 46
DQ 47
UDQS
UDM
I/0 7
I/0 6
I/0 5
I/0 4
I/0 3
I/0 2
I/0 1
I/0 0
DQS6
DM6
DQ48
DQ 49
DQ 50
DQ 51
DQ 52
DQ 53
DQ 54
DQ 55
LDQS
LDM
I/0 15
I/0 14
I/0 13
I/0 12
I/0 11
I/0 10
I/0 9
I/0 8
DQS7
DM7
DQ 56
DQ 57
DQ 58
DQ 59
DQ 60
DQ 61
DQ 62
DQ 63
UDQS
UDM
I/0 7
I/0 6
I/0 5
I/0 4
I/0 3
I/0 2
I/0 1
I/0 0
LDQS
LDM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
CS
D2
CS
D6
UDQS
UDM
I/0 8
I/0 9
I/0 10
I/0 11
I/0 12
I/0 13
I/0 14
I/0 15
LDQS
LDM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
CS
D3
CS
D7
UDQS
UDM
I/0 8
I/0 9
I/0 10
I/0 11
I/0 12
I/0 13
I/0 14
I/0 15
*Clock Net Wiring
D0/D2/Cap
BA0 - BA1
BA0-BA1: DDR SDRAMs D0 - D7
A0 - A12
A0-A12: DDR SDRAMs D0 - D7
RAS
RAS: SDRAMs D0 - D7
CAS
CAS: SDRAMs D0 - D7
CKE0
CKE: SDRAMs D0 - D3
CKE1
CKE: SDRAMs D4 - D7
WE
WE: SDRAMs D0 - D7
VDDSPD
VDD/VDDQ
SDRAMs
D0 - D7
VSS
D0 - D7
CK0/1/2
CK0/1/2 Card
Edge
4 SDRAMs
4 SDRAMs
NC
D5/D7/Cap
Serial PD
SCL
SDA
WP
VREF
R=120Ω
D4/D6/Cap
SPD
D0 - D7
D1/D3/Cap
Clock Wiring
Clock
Input
CK0/CK0
CK1/CK1
CK2/CK2
A0
A1
A2
SA0
SA1
SA2
Notes:
1. DQ-to-I/O wiring is shown as recommended but may be changed.
2. DQ/DQS/DM/CKE/CS relationships must
be maintained as shown.
3. DQ, DQS, DM/DQS resistors: 22 Ohms.
Rev. 1.2 June 2005
256MB, 512MB Unbuffered SODIMM
DDR SDRAM
7.0 Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN,VOUT
-0.5 ~ 3.6
V
Voltage on VDD & VDDQ supply relative to VSS
VDD,VDDQ
-1.0 ~ 3.6
V
TSTG
-55 ~ +150
°C
Power dissipation
PD
1.5 * # of component
W
Short circuit current
IOS
50
mA
Storage temperature
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
8.0 DC Operating Conditions
Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70°C)
Parameter
Symbol
Min
Max
Unit
Supply voltage(for device with a nominal VDD of 2.5V for DDR266/333)
VDD
2.3
2.7
V
Supply voltage(for device with a nominal VDD of 2.6V for DDR400)
VDD
2.5
2.7
V
I/O Supply voltage(for device with a nominal VDD of 2.5V for DDR266/333)
VDDQ
2.3
2.7
V
I/O Supply voltage(for device with a nominal VDD of 2.6V for DDR400)
VDDQ
2.5
2.7
V
I/O Reference voltage
VREF
0.49*VDDQ
0.51*VDDQ
V
1
I/O Termination voltage(system)
VTT
VREF-0.04
VREF+0.04
V
2
VIH(DC)
VREF+0.15
VDDQ+0.3
V
Input logic high voltage
Note
Input logic low voltage
VIL(DC)
-0.3
VREF-0.15
V
Input Voltage Level, CK and CK inputs
VIN(DC)
-0.3
VDDQ+0.3
V
Input Differential Voltage, CK and CK inputs
VID(DC)
0.36
VDDQ+0.6
V
3
V-I Matching: Pullup to Pulldown Current Ratio
VI(Ratio)
0.71
1.4
-
4
II
-2
2
uA
Output leakage current
IOZ
-5
5
uA
Output High Current(Normal strengh driver) ;VOUT = VTT + 0.84V
IOH
-16.8
mA
Output High Current(Normal strengh driver) ;VOUT = VTT - 0.84V
IOL
16.8
mA
Output High Current(Half strengh driver) ;VOUT = VTT + 0.45V
IOH
-9
mA
Output High Current(Half strengh driver) ;VOUT = VTT - 0.45V
IOL
9
mA
Input leakage current
Note :
1. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same. Peak-to peak noise on VREF may
not exceed +/-2% of the dc value.
2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track
variations in the DC level of VREF.
3. VID is the magnitude of the difference between the input level on CK and the input level on CK.
4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range,
for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum difference between pullup and pulldown drivers
due to process variation. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7 for device drain to
source voltages from 0.1 to 1.0.
Rev. 1.2 June 2005
256MB, 512MB Unbuffered SODIMM
DDR SDRAM
9.0 DDR SDRAM IDD spec table
9.1 M470L3324CU0 [ (32M x 64) 256MB Module ]
(VDD=2.7V, T = 10°C)
Symbol
CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5)
Unit
IDD0
480
420
380
380
mA
IDD1
640
560
520
520
mA
IDD2P
20
20
20
20
mA
IDD2F
120
120
120
120
mA
IDD2Q
100
100
100
100
mA
IDD3P
180
120
120
120
mA
IDD3N
240
180
180
180
mA
IDD4R
760
680
620
620
mA
IDD4W
860
740
640
640
mA
IDD5
880
820
780
780
mA
20
20
20
20
mA
IDD6
Normal
Low power
IDD7A
12
12
12
12
mA
1,600
1,520
1,380
1,380
mA
Notes
Optional
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
9.2 M470L6524CU0 [ (64M x 64) 512MB Module ]
(VDD=2.7V, T = 10°C)
Symbol
CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5)
Unit
IDD0
720
600
560
560
mA
IDD1
880
740
700
700
mA
IDD2P
40
40
40
40
mA
IDD2F
240
240
240
240
mA
IDD2Q
200
200
200
200
mA
IDD3P
360
240
240
240
mA
IDD3N
480
360
360
360
mA
IDD4R
1,000
860
800
800
mA
IDD4W
1,100
920
820
820
mA
IDD5
1,120
1,000
960
960
mA
IDD6
Normal
40
40
40
40
mA
Low power
24
24
24
24
mA
1,840
1,700
1,560
1,560
mA
IDD7A
Notes
Optional
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev. 1.2 June 2005
256MB, 512MB Unbuffered SODIMM
DDR SDRAM
10.0 AC Operating Conditions
Parameter/Condition
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Symbol
Min
Max
VIH(AC)
VREF + 0.31
Unit
Note
V
3
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
VIL(AC)
VREF - 0.31
V
3
Input Differential Voltage, CK and CK inputs
VID(AC)
0.7
VDDQ+0.6
V
1
Input Crossing Point Voltage, CK and CK inputs
VIX(AC)
0.5*VDDQ-0.2
0.5*VDDQ+0.2
V
2
Note :
1. VID is the magnitude of the difference between the input level on CK and the input on CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same.
3. These parameters should be tested at the pim on actual components and may be checked at either the pin or the pad in
simulation. the AC and DC input specificatims are refation to a Vref envelope that has been bandwidth limited 20MHz.
Vtt=0.5*VDDQ
RT=50Ω
Output
Z0=50Ω
VREF
=0.5*VDDQ
CLOAD=30pF
Output Load Circuit (SSTL_2)
11.0 Input/Output Capacitance
( TA= 25°C, f=100MHz)
Parameter
Symbol
Input capacitance(A0 ~ A12, BA0 ~ BA1,RAS,CAS,WE )
M470L3324CU0
M470L6524CU0
Unit
Min
Max
Min
Max
CIN1
41
45
49
57
pF
Input capacitance(CKE0,CKE1)
CIN2
34
38
42
50
pF
Input capacitance( CS0, CS1)
CIN3
34
38
42
50
pF
Input capacitance( CLK0, CLK1,CLK2)
CIN4
25
30
25
30
pF
Input capacitance(DM0~DM7)
CIN5
6
7
6
7
pF
Data & DQS input/output capacitance(DQ0~DQ63)
Cout1
6
7
6
7
pF
Rev. 1.2 June 2005
256MB, 512MB Unbuffered SODIMM
DDR SDRAM
12.0 AC Timming Parameters & Specifications
Symbol
Parameter
Row cycle time
CC
B3
A2
B0
(DDR400@CL=3.0) (DDR333@CL=2.5) (DDR266@CL=2.0) (DDR266@CL=2.5) Unit
Min
Max
Min
Max
Min
Max
Min
Max
tRC
55
60
65
65
ns
tRFC
70
72
75
75
ns
Row active time
tRAS
40
RAS to CAS delay
tRCD
15
Refresh row cycle time
Row precharge time
Row active to Row active delay
Write recovery time
70K
42
70K
18
45
70K
20
45
70K
20
ns
ns
tRP
15
18
20
20
ns
tRRD
10
12
15
15
ns
tWR
15
15
15
15
ns
tWTR
2
1
1
1
tCK
-
-
7.5
12
7.5
12
10
12
ns
tCK
6
12
6
12
7.5
12
7.5
12
ns
5
10
-
-
-
-
-
-
Clock high level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
tCK
Clock low level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
tCK
tDQSCK
-0.55
+0.55
-0.6
+0.6
-0.75
+0.75
-0.75
+0.75
ns
Output data access time from CK/CK
tAC
-0.65
+0.65
-0.7
+0.7
-0.75
+0.75
-0.75
+0.75
ns
Data strobe edge to ouput data edge
tDQSQ
-
0.4
-
0.45
-
0.5
-
0.5
ns
Read Preamble
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
0.9
1.1
tCK
Last data in to Read command
CL=2.0
Clock cycle time
CL=2.5
CL=3.0
DQS-out access time from CK/CK
Note
Read Postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK
CK to valid DQS-in
tDQSS
0.72
1.28
0.75
1.25
0.75
1.25
0.75
1.25
tCK
DQS-in setup time
tWPRES
0
0
0
0
ns
DQS-in hold time
tWPRE
0.25
0.25
0.25
0.25
tCK
22
13
DQS falling edge to CK rising-setup time
tDSS
0.2
0.2
0.2
0.2
tCK
DQS falling edge from CK rising-hold time
tDSH
0.2
0.2
0.2
0.2
tCK
DQS-in high level width
tDQSH
0.35
0.35
0.35
0.35
tCK
DQS-in low level width
tDQSL
0.35
0.35
0.35
0.35
tCK
Address and Control Input setup time(fast)
tIS
0.6
0.75
0.9
0.9
ns
15, 17~19
Address and Control Input hold time(fast)
tIH
0.6
0.75
0.9
0.9
ns
15, 17~19
Address and Control Input setup
tIS
0.7
0.8
1.0
1.0
ns
16~19
Address and Control Input hold time(slow)
tIH
0.7
0.8
1.0
1.0
ns
16~19
Data-out high impedence time from CK/CK
tHZ
-0.65
+0.65
-0.7
+0.7
-0.75
+0.75
-0.75
+0.75
ns
11
Data-out low impedence time from CK/CK
tLZ
-0.65
+0.65
-0.7
+0.7
-0.75
+0.75
-0.75
+0.75
ns
11
Mode register set cycle time
tMRD
10
12
15
15
ns
DQ & DM setup time to DQS
tDS
0.4
0.45
0.5
0.5
ns
j, k
DQ & DM hold time to DQS
tDH
0.4
0.45
0.5
0.5
ns
j, k
Control & Address input pulse width
DQ & DM input pulse width
tIPW
2.2
2.2
2.2
2.2
ns
18
tDIPW
1.75
1.75
1.75
1.75
ns
18
Exit self refresh to non-Read command
tXSNR
75
75
75
75
ns
Exit self refresh to read command
tXSRD
200
200
200
200
tCK
Refresh interval time
tREFI
7.8
7.8
-
tHP
-tQHS
tCLmin
or tCHmin
7.8
-
tHP
-tQHS
-
tCLmin
or tCHmin
7.8
us
14
-
tHP
-tQHS
-
ns
21
-
tCLmin
or tCHmin
-
ns
20, 21
Output DQS valid window
tQH
tHP
-tQHS
Clock half period
tHP
tCLmin
or tCHmin
-
tWPST
0.4
0.6
Active to Read with Auto precharge
command
tRAP
15
18
20
20
Autoprecharge write recovery +
Precharge time
tDAL
(tWR/tCK)
+
(tRP/tCK)
(tWR/tCK)
+
(tRP/tCK)
(tWR/tCK)
+
(tRP/tCK)
(tWR/tCK)
+
(tRP/tCK)
Data hold skew factor
DQS write postamble time
tQHS
0.5
0.55
0.4
0.6
0.75
0.4
0.6
0.4
0.75
ns
21
0.6
tCK
12
tCK
23
Rev. 1.2 June 2005
256MB, 512MB Unbuffered SODIMM
DDR SDRAM
13.0 System Characteristics for DDR SDRAM
The following specification parameters are required in systems using DDR333, DDR266 devices to ensure proper system performance.
these characteristics are for system simulation purposes and are guaranteed by design.
Table 1 : Input Slew Rate for DQ, DQS, and DM
AC CHARACTERISTICS
DDR333
DDR266
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
Units
Notes
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
DCSLEW
TBD
TBD
TBD
TBD
V/ns
a, m
Table 2 : Input Setup & Hold Time Derating for Slew Rate
Input Slew Rate
∆tIS
∆tIH
Units
Notes
0.5 V/ns
0
0
ps
i
0.4 V/ns
+50
0
ps
i
0.3 V/ns
+100
0
ps
i
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
Input Slew Rate
∆tDS
∆tDH
Units
Notes
0.5 V/ns
0
0
ps
k
0.4 V/ns
+75
+75
ps
k
0.3 V/ns
+150
+150
ps
k
Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate
Delta Slew Rate
∆tDS
∆tDH
Units
Notes
+/- 0.0 V/ns
0
0
ps
j
+/- 0.25 V/ns
+50
+50
ps
j
+/- 0.5 V/ns
+100
+100
ps
j
Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only)
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
1.0
4.5
a,c,d,f,g,h
Pulldown slew
1.2 ~ 2.5
1.0
4.5
b,c,d,f,g,h
Table 6 : Output Slew Rate Characteristice (X16 Devices only)
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
0.7
5.0
a,c,d,f,g,h
Pulldown slew
1.2 ~ 2.5
0.7
5.0
b,c,d,f,g,h
Table 7 : Output Slew Rate Matching Ratio Characteristics
AC CHARACTERISTICS
DDR333
DDR266
PARAMETER
MIN
MAX
MIN
MAX
Notes
Output Slew Rate Matching Ratio (Pullup to Pulldown)
TBD
TBD
TBD
TBD
e,m
Rev. 1.2 June 2005
256MB, 512MB Unbuffered SODIMM
DDR SDRAM
14.0 Component Notes
1. All voltages referenced to Vss.
2. Tests for ac timing, IDD, and electrical, ac and dc characteristics, may be conducted at nominal reference/supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified.
3. Figure 1 represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to be either a precise representation of the typical system environment nor a depiction of the actual load presented by a production tester. System designers will use IBIS or
other simulation tools to correlate the timing reference load to a system environment. Manufacturers will correlate to their production test conditions
(generally a coaxial transmission line terminated at the tester electronics).
VDDQ
50Ω
Output
(Vout)
30pF
Figure 1 : Timing Reference Load
4. AC timing and IDD tests may use a VIL to VIH swing of up to 1.5 V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK/CK), and parameter specifications are guaranteed for the specified ac input levels under normal use conditions. The minimum slew
rate for the input signals is 1 V/ns in the range between VIL(ac) and VIH(ac).
5. The ac and dc input level specifications are as defined in the SSTL_2 Standard (i.e., the receiver will effectively switch as a result of the signal crossing
the ac input level and will remain in that state as long as the signal does not ring back above (below) the dc input LOW (HIGH) level.
6. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE ≤ 0.2VDDQ is recognized as LOW.
7. Enables on.chip refresh and address counters.
8. IDD specifications are tested after the device is properly initialized.
9. The CK/CK input reference level (for timing referenced to CK/CK) is the point at which CK and CK cross; the input reference level for signals other
than CK/CK, is VREF.
10. The output timing reference voltage level is VTT.
11. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to a specific voltage
level but specify when the device output is no longer driving (HZ), or begins driving (LZ).
12. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but sys tem performance
(bus turnaround) will degrade accordingly.
13. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CK edge. A valid transition is
defined as monotonic and meeting the input slew rate specifications of the device. when no writes were previ ously in progress on the bus, DQS will
be tran sitioning from High- Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this
time, depending on tDQSS.
14. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.
15. For command/address input slew rate ≥ 1.0 V/ns
16. For command/address input slew rate ≥ 0.5 V/ns and < 1.0 V/ns
17. For CK & CK slew rate ≥ 1.0 V/ns
18. These parameters guarantee device timing, but they are not necessarily tested on each device. They may be guaranteed by device design or tester
correlation.
19. Slew Rate is measured between VOH(ac) and VOL(ac).
20. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater
than the minimum specification limits for tCL and tCH).....For example, tCL and tCH are = 50% of the period, less the half period jitter (tJIT(HP)) of the
clock source, and less the half period jitter due to crosstalk (tJIT(crosstalk)) into the clock traces.
21. tQH = tHP - tQHS, where:
tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS accounts for 1) The pulse duration distortion of on-chip clock circuits; and 2) The worst case push-out of DQS on one tansition followed by the worst case pull-in of DQ on the next transition, both of which are, separately, due to data pin skew and output pattern effects, and p channel to n-channel variation of the output drivers.
22. tDQSQ - Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for any given cycle.
23. tDAL = (tWR/tCK) + (tRP/tCK)
For each of the terms above, if not already an integer, round to the next highest integer. Example: For DDR266B at CL=2.5 and tCK=7.5ns tDAL = (15
ns / 7.5 ns) + (20 ns/ 7.5ns) = (2) + (3) tDAL = 5 clocks
Rev. 1.2 June 2005
256MB, 512MB Unbuffered SODIMM
DDR SDRAM
15.0 System Notes:
a. Pullup slew rate is characteristized under the test conditions as shown in Figure 2.
Test point
Output
50Ω
VSSQ
Figure 2 : Pullup slew rate test load
b. Pulldown slew rate is measured under the test conditions shown in Figure 3.
VDDQ
50Ω
Output
Test point
Figure 3 : Pulldown slew rate test load
c. Pullup slew rate is measured between (VDDQ/2 - 320 mV +/- 250 mV)
Pulldown slew rate is measured between (VDDQ/2 + 320 mV +/- 250 mV)
Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output switching.
Example : For typical slew rate, DQ0 is switching
For minmum slew rate, all DQ bits are switching from either high to low, or low to high.
The remaining DQ bits remain the same as for previous state.
d. Evaluation conditions
Typical : 25 °C (T Ambient), VDDQ = 2.5V(for DDR266/333) and 2.6V(for DDR400), typical process
Minimum : 70 °C (T Ambient), VDDQ = 2.3V(for DDR266/333) and 2.5V(for DDR400), slow - slow process
Maximum : 0 °C (T Ambient), VDDQ = 2.7V(for DDR266/333) and 2.7V(for DDR400), fast - fast process
e. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire temperature and voltage range.
For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation.
f. Verified under typical conditions for qualification purposes.
g. TSOPII package divices only.
h. Only intended for operation up to 266 Mbps per pin.
i. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below 0.5V/ns as shown in Table 2. The Input slew rate is
based on the lesser of the slew rates detemined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions.
j. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates differ, as shown in Tables 3 & 4. Input slew rate
is based on the larger of AC-AC delta rise, fall rate and DC-DC delta rise, Input slew rate is based on the lesser of the slew rates determined by either
VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions. The delta rise/fall rate is calculated as: {1/(Slew Rate1)} - {1/(Slew Rate2)}
For example : If Slew Rate 1 is 0.5 V/ns and slew Rate 2 is 0.4 V/ns, then the delta rise, fall rate is - 0.5ns/V . Using the table given, this
would result in the need for an increase in tDS and tDH of 100 ps.
k. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser on the lesser of
the AC - AC slew rate and the DC- DC slew rate. The inut slew rate is based on the lesser of the slew rates deter mined by either VIH(ac) to VIL(ac) or
VIH(DC) to VIL(DC), and similarly for rising transitions.
m. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi tions through the
DC region must be monotonic.
Rev. 1.2 June 2005
256MB, 512MB Unbuffered SODIMM
DDR SDRAM
16.0 Command Truth Table
COMMAND
(V=Valid, X=Don′t Care, H=Logic High, L=Logic Low)
CKEn-1
CKEn
CS
RAS
CAS
WE BA0,1 A10/AP
A0 ~ A9
A11, A12
Note
Register
Extended MRS
H
X
L
L
L
L
OP CODE
1, 2
Register
Mode Register Set
H
X
L
L
L
L
OP CODE
1, 2
L
L
L
H
X
Auto Refresh
Entry
Refresh
Self
Refresh
Exit
Bank Active & Row Addr.
Read &
Column Address
Auto Precharge Disable
Write &
Column Address
Auto Precharge Disable
Auto Precharge Enable
Auto Precharge Enable
Burst Stop
Bank Selection
Precharge
H
L
L
H
H
H
H
X
X
X
X
L
L
H
H
V
H
X
L
H
L
H
V
H
X
L
H
L
L
V
H
X
L
H
H
L
L
H
H
H
X
Entry
H
L
Exit
L
H
Entry
H
L
Exit
L
H
All Banks
Active Power Down
H
Precharge Power Down Mode
DM
H
No operation (NOP) : Not defined
H
L
L
H
L
H
X
X
X
L
V
V
V
X
X
X
X
H
X
X
X
L
H
H
H
H
X
X
X
L
V
V
V
X
X
3
3
3
X
3
Row Address
(A0~A9, A11,A12)
L
Column
Address
H
L
Column
Address
H
X
V
L
X
H
X
X
X
L
H
H
H
4
4, 6
7
X
5
X
X
X
H
4
4
X
8
9
9
Note :
1. OP Code : Operand Code. A0 ~ A12 & BA0 ~ BA1 : Program keys. (@EMRS/MRS)
2. EMRS/ MRS can be issued only at all banks precharge state. A new command can be issued 2 clock cycles after EMRS or MRS.
3. Auto refresh functions are same as the CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA0 ~ BA1 : Bank select addresses.
If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected.
If BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank B is selected.
If BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank C is selected.
If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected.
5. If A10/AP is "High" at row precharge, BA0 and BA1 are ignored and all banks are selected.
6. During burst write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
7. Burst stop command is valid at every burst length.
8. DM sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0).
9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM.
Rev. 1.2 June 2005
256MB, 512MB Unbuffered SODIMM
DDR SDRAM
17.0 Physical Dimensions
17.1 32M x 64 (M470L3324CU0)
Units : Inches (Millimeters)
2.70
(67.60)
2.50
(63.60)
39 41
1
0.456
11.40
0.086
2.15
0.07
(1.8+/-0.1)
0.79
(20.00)
0.24
(6.0)
0.16 ± 0.039
(4.00 ± 0.10)
199
2-φ 0.07
(1.8+0.1/-0.0)
1.896
(47.40)
0.17
(4.20)
0.096
(2.40+/-0.1)
1.25
(31.75)
Full R 2.0
Z
Y
0.098
2.45
40 42
0.157 Min
(4.00 Min)
0.157 Min
(4.00 Min)
0.150 Max
(3.80 Max)
0.04 ± 0.0039
(1.00 ± 0.10)
0.16 ± 0.0039
(4.00 ± 0.10)
0.04 ± 0.0039
(1.00 ± 0.1)
Detail Z
(2.55 )
200
0.102 Min
2
0.018 ± 0.001
0.01
(0.2+/-0.15)
0.024 TYP
(0.60 TYP)
Detail Y
Tolerances : ±.006(.15) unless otherwise specified
The used device is 32Mx16 SDRAM, TSOPII
SDRAM Part No. : K4H511638C-U***
Rev. 1.2 June 2005
256MB, 512MB Unbuffered SODIMM
DDR SDRAM
17.2 64Mx64 (M470L6524CU0)
Units : Inches (Millimeters)
2.70
(67.60)
2.50
(63.60)
39 41
1
0.456
11.40
0.086
2.15
0.07
(1.8+/-0.1)
0.79
(20.00)
0.24
(6.0)
0.16 ± 0.039
(4.00 ± 0.10)
199
2-φ 0.07
(1.8+0.1/-0.0)
1.896
(47.40)
0.17
(4.20)
0.096
(2.40+/-0.1)
1.25
(31.75)
Full R 2.0
Z
Y
0.098
2.45
40 42
0.157 Min
(4.00 Min)
0.157 Min
(4.00 Min)
0.150 Max
(3.80 Max)
0.04 ± 0.0039
(1.00 ± 0.10)
0.16 ± 0.0039
(4.00 ± 0.10)
0.04 ± 0.0039
(1.00 ± 0.1)
Detail Z
(2.55 )
200
0.102 Min
2
0.018 ± 0.001
0.01
(0.2+/-0.15)
0.024 TYP
(0.60 TYP)
Detail Y
Tolerances : ±.006(.15) unless otherwise specified
The used device is 32Mx16 SDRAM, TSOPII
SDRAM Part No. : K4H511638C-U***
Rev. 1.2 June 2005