New Product V40100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS® • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS TO-3PW PIN 1 PIN 2 PIN 3 CASE For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: TO-3PW Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free and RoHS compliant, commercial grade IF(AV) 2 x 20 A VRRM 100 V IFSM 300 A EAS at L = 100 mH 280 mJ VF at IF = 20 A 0.61 V Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test TJ max. 150 °C Polarity: As marked per Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage SYMBOL V40100PW UNIT VRRM 100 V 40 per device Maximum average forward rectified current (fig. 1) per diode IF(AV) A 20 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 300 A Non-repetitive avalanche energy at TJ = 25 °C, L = 100 mH per diode EAS 280 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode IRRM 1.0 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs TJ, TSTG - 40 to + 150 °C Operating junction and storage temperature range Document Number: 89179 Revision: 09-Feb-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product V40100PW Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage IR = 1.0 mA SYMBOL TYP. MAX. UNIT VBR 100 (minimum) - V 0.48 - 0.56 - 0.69 0.77 0.39 - TA = 25 °C IF = 5 A IF = 10 A Instantaneous forward voltage per diode TA = 25 °C IF = 20 A VF (1) IF = 5 A IF = 10 A V TA = 125 °C IF = 20 A TA = 25 °C VR = 70 V TA = 125 °C Reverse current per diode VR = 100 V IR (2) TA = 25 °C TA = 125 °C 0.50 - 0.61 0.69 23 - μA 11 - mA - 1000 μA 29 80 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V40100PW UNIT 1.5 per diode Typical thermal resistance per device °C/W RθJC 0.8 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-3PW V40100PW-M3/4W 4.5 4W 30/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 50 18 16 40 Average Power Loss (W) Average Forward Current (A) Resistive or Inductive Load 30 20 10 D = 0.3 D = 0.2 14 12 D = 1.0 D = 0.1 10 8 T 6 4 2 Mounted on Specific Heatsink D = 0.8 D = 0.5 D = tp/T tp 16 20 0 0 0 25 50 75 100 125 150 175 0 4 8 12 24 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89179 Revision: 09-Feb-10 New Product V40100PW Vishay General Semiconductor 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TA = 150 °C 10 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 125 °C 1 TA = 25 °C 0.1 1000 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0.8 1 Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 100 Fig. 5 - Typical Junction Capacitance Per Diode 100 10 TA = 150 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 10 Reverse Voltage (V) Instantaneous Forward Voltage (V) TA = 125 °C 10 1 0.1 TA = 25 °C 0.01 0.001 20 30 40 50 60 70 80 90 1 0.1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-3PW 0.645 (16.38) 0.625 (15.87) 0.323 (8.20) 0.313 (7.95) 30° Ref. 0.245 (6.23) 0.225 (5.72) 0.170 (4.32) 0.840 (21.34) 0.820 (20.83) 0.160 (4.06) 0.140 (3.56) 0.225 (5.72) 0.205 (5.21) Document Number: 89179 Revision: 09-Feb-10 0.131 (3.33) 0.121 (3.07) 0.048 (1.22) 0.044 (1.12) 0.551 (14.00) 0.537 (13.64) 0.050 (1.27) 3° Ref. R0.155 (R3.94) R0.145 (R3.68) 0.077 (1.96) 0.063 (1.60) 10° Typ. Both Sides 0.079 (2.01) 0.065 (1.65) Ø 0.146 (3.71) Ø 0.136 (3.45) 0.090 (2.29) 0.080 (2.03) 0.565 (14.35) 0.545 (13.84) 0.175 (4.45) 0.165 (4.19) 3° Ref. 3° Ref. 0.467 (11.86) 0.453 (11.51) 5° Ref. Both Sides 0.098 (2.50) 0.083 (2.12) 0.030 (0.75) 0.020 (0.50) For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000