SANYO FH201

Ordering number:ENN6117
NPN Epitaxial Planar Silicon Composite Transistor
FH201
VCO OSC Circuit Applications
Package Dimensions
unit:mm
2149
0.25
6
5
0.15
4
0 to 0.1
3
1 : Collector1
2 : Emitter1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Base1
SANYO : MCP6
0.9
1 2
0.65
2.0
0.2
0.425
[FH201]
1.25
2.1
· Composite type with a buffer transistor (2SC4871)
and a oscillator transistor (2SC4867) contained in
the currently provided MCP package as a VCO
oscillator, improving the mounting efficiency greatly.
· The FH201 is formed with two chips, being equivalent to the 2SC4871 and 2SC4867, placed in one
package.
· Optimal for use in UHF band oscillator circuit.
0.2
0.425
Features
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Tr1 [2SC4871]
Collector-to-Base Voltage
VCBO
VCEO
16
V
8
V
VEBO
IC
1.5
V
20
mA
PC
150
mW
Collector-to-Base Voltage
VCBO
16
V
Collector-to-Emitter Voltage
VCEO
VEBO
8
V
1.5
V
Collector Current
IC
50
mA
Collector Dissipation
PC
150
mW
Total Dissipation
PT
200
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Tr2 [2SC4867]
Emitter-to-Base Voltage
[Common specifications]
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0199TS (KOTO) TA-1315 No.6117–1/8
FH201
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Tr1 [2SC4871]
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
VCB=10V, IE=0
VEB=1V, IC=0
DC Current Gain
Gain-Bandwidth Product
hFE
fT
VCE=5V, IC=4mA
VCE=5V, IC=4mA
Output Capacitance
Cob
VCB=10V, f=1MHz
Forward Transfer Gain
Noise Figure
90
1.0
µA
10
µA
180
10
GHz
0.4
| S21e |2
VCE=5V, IC=7mA, f=1GHz
NF
VCE=5V, IC=4mA, f=1GHz
10
0.7
pF
13
dB
1.3
2.8
dB
Tr2 [2SC4867]
Collector Cutoff Current
ICBO
VCB=10V, IE=0
1.0
µA
Emitter Cutoff Current
IEBO
10
µA
DC Current Gain
hFE
VEB=1V, IC=0
VCE=5V, IC=15mA
Gain-Bandwidth Product
fT
Cob
VCE=5V, IC=15mA
VCB=10V, f=1MHz
Output Capacitance
Forward Transfer Gain
Noise Figure
90
180
9.0
GHz
0.6
| S21e |2
VCE=5V, IC=15mA, f=1GHz
NF
VCE=5V, IC=5mA, f=1GHz
10
1.1
pF
13
dB
1.2
2.5
dB
Marking : 201
Electrical Connection
B1
E2
B2
Tr1
Tr2
C1
E1
C2
hFE -- IC
3
[Tr1]
[Tr1]
VCE=5V
VCE=5V
Gain-Bandwidth Produnt, fT – GHz
2
DC Current Gain, hFE
fT -- IC
2
100
7
5
3
2
10
10
7
5
3
2
1.0
7
5
7
5
0.1
3
2
3
5 7 1.0
2
3
5
7
10
2
3
Collector Current, IC – mA
IT00335
Cob -- VCB
[Tr1]
5
3
5
1.0
7
5
3
2
0.1
7
5
3
5
7 1.0
2
3
5
7 10
2
3
3
5
7
2
10
3
IT00336
Cre -- VCB
5
Reverse Transfer Capacitance, Cre – pF
Output Capacitance, Cob – pF
2
Collector-to-Base Voltage, VCB -- V
2
1.0
[Tr1]
f=1MHz
3
2
7
Collector Current, IC – mA
f=1MHz
7 0.1
5
5
IT00337
3
2
1.0
7
5
3
2
0.1
7
5
7 0.1
2
3
5
7 1.0
2
3
5
7 10
2
Collector-to-Base Voltage, VCB -- V
3
5
IT00338
No.6117–2/8
FH201
NF -- IC
[Tr1]
VCE=5V
f=1GHz
2
Noise Figure, NF – dB
8
6
4
2
0
S21e2 -- IC
16
Forward Transfer Gain, S21e – dB
10
[Tr1]
VCE=5V
f=1GHz
14
12
10
8
6
4
2
0
5
7
1.0
2
3
5
7
10
2
3
Collector Current, IC – mA
IT00339
PC -- Ta
[Tr1]
220
2
3
5
7
1.0
2
3
5
7
10
Collector Current, IC – mA
2
3
5
IT00340
Collector Dissipation, PC – mW
200
180
160
150
140
To
t
al
120
1u
di
ss
ip
ati
on
nit
100
80
60
40
20
0
0
20
40
60
80
100
120
Ambient Temperature, Ta – °C
140
160
IT00341
No.6117–3/8
FH201
S parameter [Tr1]
VCE=5V
f=200MHz to 2000MHz(200MHz Step)
S11e
j50
j25
j100
j150
60°
30°
2.0
GH
j200
j250
j10
VCE=5V
f=200MHz to 2000MHz(200MHz Step)
S21e
90°
V
120°
C
IC E =5V
=7
mA
Hz
G
0.2150°
V
=5
E A
V C =2m
IC
2.0
z
GH
GH
z
2
.
0
2
±180°
z
10
25
100
50
250
150
V
C
IC= E=5V GHz
7mA 0.2
z
z
GH
2.0
--j10
VCE =5V
IC =2mA
6
8 10
0
--j250
--j200
--j150
--30°
--150°
--j100
--j25
--60°
--120°
--j50
--90°
IT00342
VCE=5V
f=200MHz to 2000MHz(200MHz Step)
S12e
90°
GH
z
2.
0G
H
z
2.0
V
C
IC E =5V
=7
mA
GH
z
0.2
GH
z
j25
j100
j150
30°
j200
j250
j10
0.2
V
=5
V CE 2mA
I C=
IT00343
VCE=5V
f=200MHz to 2000MHz(200MHz Step)
S22e
j50
60°
120°
150°
4
0.2
GH
z
GH
2.0
±180°
0
0
10
25
50
100
150
2.0
GH
z
0.04 0.08 0.12 0.16 0.2
--j250
5V --j200
=
z
E
H
V
C
2.0G
A
I C=2m --j150
--j10
--30°
--150°
--120°
--60°
--90°
IT00344
250
VCE=5V
IC=7mA
0.2
0.2 GH
GH z
z
0
--j100
--j25
--j50
IT00345
No.6117–4/8
FH201
S Parameters (Common emitter) [Tr1]
VCE=5V, IC=2mA, ZO=50Ω
Freq (MHz)
| S11 |
∠ S11
| S21 |
∠ S21
| S12 |
∠ S12
| S22 |
∠ S22
200
0.912
–17.6
5.764
161.5
0.034
79.0
0.974
–10.3
400
0.835
–33.0
5.282
145.5
0.065
69.9
0.919
–19.2
600
0.742
–46.9
4.753
131.2
0.088
62.8
0.850
–26.3
800
0.649
–58.9
4.268
119.4
0.107
57.9
0.789
–31.6
1000
0.578
–68.7
3.840
109.4
0.121
54.5
0.740
–35.5
1200
0.512
–78.1
3.440
100.5
0.134
52.2
0.698
–38.9
1400
0.445
–86.3
3.123
92.5
0.145
50.3
0.664
–41.6
1600
0.400
–93.0
2.836
85.2
0.154
49.2
0.638
–44.3
1800
0.359
–98.5
2.588
79.0
0.164
48.4
0.615
–46.3
2000
0.319
–106.6
2.297
73.0
0.174
47.9
0.601
–48.3
VCE=5V, IC=7mA, ZO=50Ω
Freq (MHz)
| S11 |
∠ S11
| S21 |
∠ S21
| S12 |
∠ S12
| S22 |
∠ S22
200
0.721
–35.1
12.262
147.1
0.030
72.8
0.900
–16.9
400
0.555
–59.9
9.445
124.9
0.050
64.4
0.763
–25.6
600
0.428
–77.5
7.290
110.2
0.065
61.9
0.666
–29.3
800
0.344
–89.9
5.877
100.1
0.078
61.5
0.611
–31.1
1000
0.291
–100.6
4.911
92.1
0.091
61.7
0.583
–32.5
1200
0.254
–110.9
4.223
85.1
0.104
61.5
0.563
–34.1
1400
0.221
–121.4
3.703
79.0
0.117
61.6
0.551
–35.7
1600
0.197
–128.9
3.294
73.6
0.129
61.6
0.540
–37.8
1800
0.178
–136.7
2.946
68.5
0.143
61.1
0.530
–39.7
2000
0.171
–148.6
2.692
63.8
0.157
60.7
0.529
–41.7
No.6117–5/8
FH201
hFE -- IC
3
[Tr2]
fT -- IC
2
[Tr2]
VCE=5V
VCE=5V
Gain-Bandwidth Product, fT – GHz
DC Current Gain, hFE
2
100
7
5
3
2
10
10
7
5
3
2
1.0
7
5
7
3
5
7 1.0
2
3
5
7 10
2
3
5
7 100
2
IT00346
Collector Current, IC – mA
Cob -- VCB
5
2
1.0
7
5
3
2
0.1
7
2
3
5
7 1.0
2
3
5
7 10
2
5
7
2
10
3
5
7 100
IT00347
Cre -- VCB
[Tr2]
f=1MHz
3
2
1.0
7
5
3
2
0.1
7
3
7 0.1
5
2
[Tr2]
VCE=5V
f=1GHz
6
4
2
5
7 1.0
2
3
5
7 10
2
S21e2 -- IC
16
2
8
3
Collector-to-Base Voltage, VCB -- V
IT00348
NF -- IC
10
Noise Figure, NF – dB
3
5
Collector-to-Base Voltage, VCB -- V
0
2
1.0
5
Reverse Transfer Capacitance, Cre – pF
Output Capacitance, Cob – pF
3
7
Collector Current, IC – mA
[Tr2]
f=1MHz
5
7 0.1
5
Forward Transfer Gain, S21e – dB
5
3
3
5
IT00349
[Tr2]
VCE=5V
f=1GHz
14
12
10
8
6
4
2
0
7
2
1.0
3
5
7
10
2
3
5
7
Collector Current, IC – mA
IT00350
PC -- Ta
[Tr2]
220
3
5
7
1.0
2
3
5
7
10
2
Collector Current, IC – mA
3
5
7 100
IT00351
Collector Dissipation, PC – mW
200
180
160
150
140
To
tal
di
ss
ip
ati
1u
on
nit
120
100
80
60
40
20
0
0
20
40
60
80
100
120
Ambient Temperature, Ta – °C
140
160
IT00352
No.6117–6/8
FH201
S parameter [Tr2]
VCE=5V
f=200MHz to 2000MHz(200MHz Step)
S11e
j50
VCE=5V
f=200MHz to 2000MHz(200MHz Step)
S21e
90°
j100
150°
A
m
--j250
--j200
--j150
0.2G
Hz
z
H
0.2G
12
16 20
0
--30°
--60°
--90°
IT00353
IT00354
VCE=5V
f=200MHz to 2000MHz(200MHz Step)
S22e
j50
60°
0.2
G
0.2 Hz IC =
15m
GH
A
z
2.0
IC
GH
=5
z
mA
2.0
GH
z
VCE=5V
f=200MHz to 2000MHz(200MHz Step)
S12e
90°
±180°
8
--150°
--120°
--j50
150°
4
--j100
--j25
120°
±180°
250
150
Hz
A
5m
=5
IC
--j10
100
50
G
2.0
=1
2.0GHz I C
2.0GHz
10
30°
z
2.0GH
j200
j250
j10
0
IC
=1
5m
A
0.2GHz I
C=5m
A
0.2G
Hz
j150
25
60°
120°
j25
j25
j100
j150
30°
j200
j250
j10
0.04 0.08 0.12 0.16 0.2
0
0
10
25
50
100
150
250
IC
=1
5m
A
z
H
G
0
z
.
2
GH I =5mA
C
2.0
--j10
--30°
--150°
--120°
--60°
--90°
IT00355
--j250
--j200
--j150
--j100
--j25
--j50
IT00356
No.6117–7/8
FH201
S Parameters (Common emitter) [Tr2]
VCE=5V, IC=5mA, ZO=50Ω
Freq (MHz)
| S11 |
∠ S11
| S21 |
∠ S21
| S12 |
∠ S12
| S22 |
∠ S22
200
0.749
–50.7
12.229
141.6
0.044
65.4
0.847
–25.4
400
0.583
–85.7
8.900
118.1
0.068
54.3
0.655
–37.4
600
0.487
–109.6
6.636
103.7
0.081
51.6
0.538
–42.3
800
0.428
–126.6
5.276
93.9
0.093
51.6
0.473
–44.4
1000
0.405
–139.3
4.379
85.9
0.106
52.6
0.443
–46.2
1200
0.387
–150.6
3.731
78.7
0.117
53.6
0.421
–48.1
1400
0.377
–160.1
3.258
72.6
0.130
54.4
0.405
–49.6
1600
0.365
–166.8
2.924
67.5
0.142
55.2
0.393
–52.1
1800
0.362
–174.3
2.589
61.9
0.156
55.6
0.387
–54.3
2000
0.361
178.3
2.363
56.8
0.171
55.9
0.383
–56.4
VCE=5V, IC=7mA, ZO=50Ω
Freq (MHz)
| S11 |
∠ S11
| S21 |
∠ S21
| S12 |
∠ S12
| S22 |
∠ S22
200
0.507
–81.6
19.422
124.2
0.033
61.9
0.650
–36.9
400
0.382
–119.5
11.595
103.8
0.050
61.0
0.445
–43.0
600
0.341
–140.9
8.046
93.3
0.065
63.3
0.365
–43.5
800
0.332
–154.0
6.182
86.4
0.081
65.1
0.330
–43.3
1000
0.320
–163.0
5.063
79.8
0.099
65.6
0.318
–43.8
1200
0.316
–170.9
4.263
74.1
0.116
65.7
0.311
–45.9
1400
0.315
–178.0
3.716
69.2
0.134
65.0
0.304
–47.4
1600
0.314
176.7
3.270
64.3
0.150
64.4
0.297
–50.3
1800
0.311
171.2
2.922
60.0
0.167
63.3
0.293
–52.6
2000
0.313
165.4
2.656
55.9
0.186
62.1
0.295
–54.8
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 1999. Specifications and information herein are subject
to change without notice.
PS No.6117–8/8