SANYO FH202

Ordering number:ENN6220
NPN Epitaxial Planar Silicon Composite Transistor
FH202
VCO OSC Circuit Applications
Package Dimensions
unit:mm
2160
0.25
6
5
0.15
4
0 to 0.1
3
1 : Collector1
2 : Emitter1
3 : Collector2
4 : Base2
5 : Emitter2
6 : Base1
SANYO : MCP6
0.9
1 2
0.65
2.0
0.2
0.425
[FH202]
1.25
2.1
· Composite type with a buffer transistor (2SC5226)
and a oscillator transistors (TS4162) contained in the
currently provided MCP package as a VCO oscillator, improving the mounting efficiency greatly.
· The FH202 is formed with two chips, being equivalent to the 2SC5245 and TS4162, placed in one
package.
· Optimal for use in oscillator circuit for VHF to UHF
band.
0.2
0.425
Features
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Tr1 [2SC5226]
Collector-to-Base Voltage
VCBO
VCEO
20
V
10
V
VEBO
IC
2
V
70
mA
PC
150
mW
Collector-to-Base Voltage
VCBO
20
V
Collector-to-Emitter Voltage
VCEO
VEBO
12
V
2
V
Collector Current
IC
50
mA
Collector Dissipation
PC
150
mW
Total Dissipation
PT
200
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Tr2 [TS4162]
Emitter-to-Base Voltage
[Common specifications]
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0199TS (KOTO) TA-1708 No.6220–1/9
FH202
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Tr1 [2SC5226]
Collector Cutoff Current
ICBO
VCB=10V, IE=0
1.0
µA
Emitter Cutoff Current
IEBO
10
µA
DC Current Gain
Gain-Bandwidth Product
hFE
fT
VEB=1V, IC=0
VCE=5V, IC=20mA
Output Capacitance
Cob
Forward Transfer Gain
90
VCE=5V, IC=20mA
7
VCB=10V, f=1MHz
0.75
| S21e |2
VCE=5V, IC=20mA, f=1GHz
NF
VCE=5V, IC=7mA, f=1GHz
Noise Figure
200
9
GHz
1.2
pF
12
dB
1.0
1.8
dB
Tr2 [TS4162]
Collector Cutoff Current
ICBO
VCB=10V, IE=0
1.0
µA
Emitter Cutoff Current
IEBO
VEB=1V, IC=0
10
µA
DC Current Gain
hFE1
hFE2
VCE=2V, IC=3mA
80
fT
VCE=2V, IC=50mA
VCE=2V, IC=3mA
1.0
Cob
VCB=10V, f=1MHz
Gain-Bandwidth Product
Output Capacitance
Forward Transfer Gain
70
1.7
GHz
1.1
| S21e |2
VCE=2V, IC=3mA, f=150MHz
NF
VCE=2V, IC=3mA, f=150MHz
Noise Figure
200
13
1.8
pF
16
dB
1.8
3.0
dB
Marking : 202
Electrical Connection
E2
B1
B2
TR1
TR2
C1
E1
C2
hFE -- IC
3
2
Gain-Bandwidth Product, fT – GHz
DC Current Gain, hFE
2
100
7
5
3
2
10
[Tr1]
VCE=5V
10
7
5
3
2
1.0
7
7
5
5
3
5
7 1.0
2
3
5 7 10
2
3
Collector Current, IC – mA
7 1.0
5 7 100
2
IT00357
Cob -- VCB
3
Reverse Transfer Capacitance, Cre – pF
7
5
3
2
0.1
7
5
2
3
5
7 1.0
2
3
3
5
5
7 10
Collector-to-Base Voltage, VCB -- V
2
3
IT00359
7
2
10
3
5
Collector Current, IC – mA
7 100
2
IT00358
Cre -- VCB
3
1.0
7 0.1
2
[Tr1]
f=1MHz
2
Output Capacitance, Cob – pF
fT -- IC
[Tr1]
VCE=5V
[Tr1]
f=1MHz
2
1.0
7
5
3
2
0.1
7
5
7 0.1
2
3
5
7 1.0
2
3
5
7 10
Collector-to-Base Voltage, VCB -- V
2
3
IT00360
No.6220–2/9
FH202
NF -- IC
VCE=5V
f=1GHz
2
14
[Tr1]
f=1GHz
12
2
10
6
4
2
0
=5
V
10
8
2V
8
V
CE
Noise Figure, NF – dB
S21e -- IC
[Tr1]
Forward Transfer Gain, S21e – dB
12
6
4
2
0
3
5 7 1.0
2
3
5
7 10
2
3
Collector Current, IC – mA
5 7 100
2
IT00361
PC -- Ta
220
3
5
7 1.0
2
3
5
7 10
2
3
Collector Current, IC – mA
5
7 100
2
IT00362
[Tr1]
Collector Dissipation, PC – mW
200
180
160
150
140
To
t
al
120
1u
di
ss
ip
nit
100
ati
on
80
60
40
20
0
0
20
40
60
80
100
120
Ambient Temperature, Ta – °C
140
160
IT00363
No.6220–3/9
FH202
S parameter [Tr1]
f=100MHz, 200MHz to 2000MHz(200MHz Step)
f=100MHz, 200MHz to 2000MHz(200MHz Step)
0.1GHz
90°
j50
150°
j200
j250
j10
VCE=2V
IC=3mA
25
50
100
±180°
250
150
VCE=5V
IC=20mA
--60°
--120°
--90°
IT00364
f=100MHz, 200MHz to 2000MHz(200MHz Step)
2.0GHz
120°
VCE=5V
IC=20mA
j50
60°
2.0GHz
j25
j100
2.0GHz
j150
30°
VCE=2V
IC=3mA
VCE=5V
IC=7mA
j200
j250
j10
0.1GHz
0.1GHz
0.1GHz 0.04 0.08 0.12 0.16 0.2
0
0
10
25
50
2.0GHz
VCE=5V
IC=7mA 2.0GHz
--j10
IT00366
150
250
VCE=5V
IC=20mA
--j250
--j200
--j150
--j100
--j25
--60°
100
2.0GHz
VCE=2V
IC=3mA
--30°
--150°
--90°
IT00365
f=100MHz, 200MHz to 2000MHz(200MHz Step)
90°
--120°
0
--30°
--150°
--j50
±180°
16 20
--j100
--j25
150°
12
VCE=5V
I =7mA
0.1GHz C
0.1GHz
--j250
--j200
--j150
0.1GHz
--j10
30°
V =2V
0.1GHz I CE
C=3mA
0.1GHz
2.0GHz 2.0GHz
4
8
2.0GHz
2.0GHz
2.0GHz
10
0
VCE=5V
VCE=5V IC=20mA
IC=7mA
j100
j150
2.0GHz
60°
120°
j25
--j50
IT00367
No.6220–4/9
FH202
S Parameters (Common emitter) [Tr1]
VCE=5V, IC=7mA, ZO=50Ω
Freq (MHz)
| S11 |
∠ S11
| S21 |
∠ S21
| S12 |
∠ S12
| S22 |
∠ S22
100
0.720
–46.0
17.973
148.5
0.030
68.5
0.880
–23.6
200
0.612
–80.9
13.927
127.3
0.047
57.1
0.697
–37.6
400
0.497
–121.3
8.656
105.0
0.066
51.3
0.479
–47.6
600
0.456
–143.5
6.080
92.8
0.079
52.9
0.382
–50.5
800
0.440
–157.6
4.725
84.3
0.094
55.4
0.339
–51.8
1000
0.436
–167.5
3.864
77.0
0.110
56.8
0.323
–53.4
1200
0.434
–176.1
3.258
70.3
0.126
57.9
0.312
–55.8
1400
0.433
–176.6
2.847
64.5
0.143
58.4
0.304
–58.3
1600
0.433
–170.9
2.329
57.4
0.160
58.9
0.296
–62.0
1800
0.434
–165.0
2.252
54.2
0.178
58.6
0.293
–65.0
2000
0.439
–159.6
2.057
49.2
0.197
58.1
0.294
–68.1
VCE=5V, IC=20mA, ZO=50Ω
Freq (MHz)
| S11 |
∠ S11
| S21 |
∠ S21
| S12 |
∠ S12
| S22 |
∠ S22
100
0.481
–78.8
29.795
132.9
0.022
63.9
0.707
–38.2
200
0.420
–119.2
19.008
112.2
0.033
60.8
0.470
–51.1
400
0.391
–151.6
10.416
95.4
0.052
64.7
0.296
–55.3
600
0.386
–166.4
7.084
86.6
0.071
67.2
0.236
–56.1
800
0.381
–175.9
5.407
80.1
0.092
68.4
0.213
–56.6
1000
0.382
178.2
4.401
74.1
0.114
67.8
0.208
–57.9
1200
0.385
172.1
3.701
68.5
0.134
66.8
0.204
–60.7
1400
0.388
166.7
3.217
63.6
0.156
65.6
0.202
–63.5
1600
0.390
162.1
2.839
58.8
0.176
64.0
0.199
–67.9
1800
0.391
156.7
2.534
54.3
0.197
62.4
0197
–71.2
2000
0.394
152.1
2.319
50.1
0.219
60.6
0.197
–74.2
VCE=2V, IC=3mA, ZO=50Ω
Freq (MHz)
| S11 |
∠ S11
| S21 |
∠ S21
| S12 |
∠ S12
| S22 |
∠ S22
100
0.858
–32.4
9.413
157.2
0.040
72.6
0.945
–16.5
200
0.782
–60.7
8.187
138.5
0.070
59.2
0.833
–29.3
400
0.653
–101.1
5.855
113.8
0.101
44.5
0.637
–43.2
600
0.588
–126.5
4.337
98.4
0.114
39.1
0.515
–50.0
800
0.557
–143.7
3.444
87.7
0.122
38.0
0.454
–53.8
1000
0.543
–156.3
2.871
78.5
0.130
38.6
0.426
–57.1
1200
0.536
–166.8
2.446
70.5
0.137
40.3
0.407
–60.3
1400
0.533
–175.5
2.145
63.5
0.146
42.5
0.393
–63.8
1600
0.527
177.0
1.904
57.1
0.155
45.0
0.382
–68.0
1800
0.525
170.3
1.714
51.7
0.168
47.3
0379
–72.0
2000
0.528
163.8
1.564
45.9
0.183
49.2
0.378
–75.8
No.6220–5/9
FH202
hFE -- IC
[Tr2]
2
DC Current Gain, hFE
VCE=2V
1V
100
7
5
3
2
10
[Tr2]
10
7
=2V
V CE
1V
5
3
2
1.0
7
5
3
5
7
2
1.0
3
5
7
2
10
3
Collector Current, IC – mA
5
Cob -- VCB
5
7
7
2
1.0
3
[Tr2]
f=1MHz
3
2
1.0
7
5
3
2
5
7
2
10
5
7
IT00369
Cre -- VCB
5
0.1
[Tr2]
f=1MHz
3
2
1.0
7
5
3
2
0.1
7 0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
Collector-to-Base Voltage, VCB -- V
IT00370
NF -- IC
[Tr2]
12
7 0.1
2
3
5
7 1.0
2
3
5
7 10
Collector-to-Base Voltage, VCB -- V
S21e2 -- IC
32
2
8
6
4
VC =
E 2V
2
1V
0
3
f=150MHz
Forward Transfer Gain, S21e – dB
10
2
IT00371
[Tr2]
f=150MHz
Noise Figure, NF – dB
3
Collector Current, IC – mA
IT00368
Reverse Transfer Capacitance, Cre – pF
3
Output Capacitance, Cob – pF
fT -- IC
2
Gain-Bandwidth Product, fT – GHz
3
28
24
V
=2
E
VC
20
16
1V
12
8
4
0
7
2
1.0
3
5
7
2
5
7
100
IT00372
PC -- Ta
[Tr2]
220
10
3
Collector Current, IC – mA
3
5
7 1.0
2
3
5
7 10
2
Collector Current, IC – mA
3
5
7 100
IT00373
Collector Dissipation, PC – mW
200
180
160
150
140
To
t
al
120
di
ss
1u
ip
nit
100
ati
on
80
60
40
20
0
0
20
40
60
80
100
120
Ambient Temperature, Ta – °C
140
160
IT00374
No.6220–6/9
FH202
S parameter [Tr2]
S11e
f=50MHz to 500MHz(50MHz Step)
S21e
f=50MHz to 500MHz(50MHz Step)
90°
j50
j100
j150
--j10
10
25
50
50MHz
VCE=2V
IC=3mA
30°
50MHz
500MHz
±180°
100 150 250 500
500MHz
VCE=2V
IC=3mA
150°
j200
j250
j10
0
60°
120°
j25
--j250
--j200
--j150
4
8
12
16
20
0
--30°
--150°
--j100
--j25
--60°
--120°
--j50
--90°
IT00375
S12e
f=50MHz to 500MHz(50MHz Step)
S22e
f=50MHz to 500MHz(50MHz Step)
90°
j50
60°
120°
j25
VCE=2V
IC=3mA
150°
j100
30°
j150
j200
j250
j10
50MHz
±180°
IT00376
500MHz
0.04 0.08 0.12 0.16 0.2
0
0
10
25
50
100 150 250 500
500MHz
50MHz
--j10
--30°
--150°
--120°
VCE=2V
IC=3mA
--90°
--j100
--j25
--60°
--j250
--j200
--j150
--j50
IT00377
IT00378
S Parameters (Common emitter) [Tr2]
VCE=2V, IC=1mA, ZO=50Ω
Freq (MHz)
| S11 |
∠ S11
| S21 |
∠ S21
| S12 |
∠ S12
| S22 |
∠ S22
50
0.965
–25.6
3.48
163.7
0.040
75.3
0.985
–7.1
100
0.948
–49.3
3.30
149.2
0.075
62.8
0.951
–13.3
150
0.922
–69.5
2.96
136.6
0.101
51.8
0.907
–18.0
200
0.903
–86.0
2.65
126.3
0.119
42.9
0.859
–21.7
250
0.885
–99.4
2.33
117.3
0.131
35.9
0.819
–24.6
300
0.873
–110.4
2.07
110.1
0.139
30.1
0.791
–26.9
350
0.866
–119.4
1.89
103.8
0.145
25.4
0.778
–28.7
400
0.854
–127.4
1.73
97.8
0.147
21.2
0.753
–30.8
450
0.846
–133.9
1.58
92.9
0.148
17.7
0.742
–32.7
500
0.847
–138.9
1.44
88.5
0.148
15.0
0.736
–34.4
No.6220–7/9
FH202
VCE=2V, IC=3mA, ZO=50Ω
Freq (MHz)
| S11 |
∠ S11
| S21 |
∠ S21
| S12 |
∠ S12
| S22 |
∠ S22
50
0.909
–35.9
9.43
158.4
0.038
71.0
0.949
–14.8
100
0.873
–66.2
8.30
141.0
0.067
56.0
0.849
–26.1
150
0.836
–89.8
7.03
127.6
0.084
44.9
0.744
–33.4
200
0.815
–106.3
5.94
117.9
0.095
37.5
0.658
–38.0
250
0.794
–119.1
5.05
110.4
0.100
32.4
0.590
–41.4
300
0.784
–128.7
4.36
104.3
0.104
28.7
0.550
–43.2
350
0.779
–136.3
3.90
99.4
0.107
26.0
0.518
–44.7
400
0.769
–143.1
3.46
94.8
0.108
23.9
0.493
–45.8
450
0.767
–148.1
3.13
91.3
0.108
22.4
0.474
–47.2
500
0.766
–152.1
2.83
87.8
0.108
21.7
0.463
–48.5
VCE=2V, IC=10mA, ZO=50Ω
Freq (MHz)
| S11 |
∠ S11
| S21 |
∠ S21
| S12 |
∠ S12
| S22 |
∠ S22
50
0.775
–61.9
23.54
145.3
0.033
61.4
0.836
–34.4
100
0.731
–101.2
17.31
124.8
0.048
46.5
0.624
–55.2
150
0.709
–124.3
13.06
112.7
0.056
39.6
0.481
–67.0
200
0.704
–136.7
10.22
105.5
0.060
37.1
0.387
–75.8
250
0.695
–146.3
8.43
100.2
0.064
36.5
0.335
–80.4
300
0.695
–152.6
7.09
96.2
0.066
36.8
0.296
–85.3
350
0.695
–157.6
6.21
92.7
0.070
37.2
0.270
–87.4
400
0.694
–162.0
5.45
89.8
0.072
38.5
0.245
–91.4
450
0.696
–164.9
4.84
87.5
0.075
39.9
0.231
–95.3
500
0.694
–167.7
4.39
85.0
0.078
41.5
0.222
–97.9
VCE=2V, IC=30mA, ZO=50Ω
Freq (MHz)
| S11 |
∠ S11
| S21 |
∠ S21
| S12 |
∠ S12
| S22 |
∠ S22
50
0.647
–98.6
37.50
129.9
0.024
52.4
0.665
–61.6
100
0.657
–134.1
22.96
111.5
0.032
44.8
0.448
–90.7
150
0.663
–149.5
16.09
103.0
0.037
44.8
0.353
–107.8
200
0.665
–157.6
12.33
97.8
0.041
47.3
0.308
–119.8
250
0.664
–163.2
9.95
94.3
0.046
49.5
0.286
–128.1
300
0.667
–167.3
8.35
91.3
0.051
52.2
0.271
–133.9
350
0.669
–170.2
7.23
89.0
0.055
54.0
0.258
–138.9
400
0.672
–173.0
6.33
86.9
0.060
55.9
0.253
–143.4
450
0.670
–174.9
5.64
85.1
0.066
57.2
0.251
–146.5
500
0.671
–176.6
5.08
83.3
0.071
58.3
0.250
–148.4
No.6220–8/9
FH202
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 1999. Specifications and information herein are subject
to change without notice.
PS No.6220–9/9