SEMIKRON SEMIX754GB128DS

SEMiX754GB128Ds
Absolute Maximum Ratings
Symbol Conditions
IGBT
/
/45
6
"8- SEMiX® 4s
SPT IGBT Modules
SEMiX754GB128Ds
Target Data
Features
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!#
Typical Applications
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&
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'+,- !%
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Values
Units
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1((
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Inverse diode
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Characteristics
Symbol Conditions
IGBT
'+,- !%
min.
typ.
max.
Units
6
/
9
6 - / .@ $
6 (- - 8 '+ ,
8 '+ .'+ ,
6 .+ - 8 '+ .'+ ,
<-+
+-+
(-'
. (-B
'-3 3
@-+
(-@
.-.+ .-(+
'-B 3-1
$
C
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<(( $- 6 .+ -
.-2
.-B '-.
'-3+ '-++
D
% %
6 (- '+ - . 5*
3@
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(-2 .
C
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F
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46
46 '-+ C- 8 .'+ ,
<< <1
G
8 '+ .'+ ,- ! "
Inverse diode
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/445
H
/?
<(( $A 6 ( A 8 '+ .'+
,- ! "
8 '+ .'+ ,
8 '+ .'+ ,
/?
<(( $A 8 '+ .'+ ,
%F% +1+( $FI
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'-+ '-3
.-.
'-3
3@2
+1
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'-+ '-+
C
$
I
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G
Thermal characteristics
48
48M
48?M
! /6J
! /
" M%
! ?LM
4
! %
(-(<'
(-(B
KFL
KFL
KFL
(-(3
KFL
+ 7+N
)O
3<'(
K
Temperature sensor
4'+
'+ ,
J'+F1+
4'4.P!QJ.F'.F.R A QKRAJ
Mechanical data
5F5
) 5+ F 5@
3F'-+
+ F+
3B(
:
GB
1
06-12-2005 GES
© by SEMIKRON
SEMiX754GB128Ds
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
2
06-12-2005 GES
© by SEMIKRON
SEMiX754GB128Ds
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Fig. 10 Transient thermal impedance of FWD
Fig. 11 Typ. CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
06-12-2005 GES
© by SEMIKRON
SEMiX754GB128Ds
Fig. 13 Typ. CAL diode recovered charge
6J
!
5S <
5S <
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
06-12-2005 GES
© by SEMIKRON