BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 1. Emitter TO-126 2.Collector 3.Base Ordering Information Part Number Marking BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD13916STU BD13910S BD13916S BD1396STU BD13910STU BD135-16 BD135-6 BD135-10 BD135-16 BD137-16 BD137-10 BD137-16 BD139-16 BD139-10 BD139-16 BD139-6 BD139-10 © 2007 Fairchild Semiconductor Corporation BD135 / 137 / 139 Rev. 1.2.0 Package Packing Method Bulk Rail TO-126 3L Bulk Rail Bulk Rail www.fairchildsemi.com 1 BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor August 2013 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO IC ICP IB Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current PC Device Dissipation TJ Junction Temperature Storage Temperature TSTG Value BD135 BD137 BD139 BD135 BD137 BD139 Units 45 60 80 45 60 80 5 1.5 3.0 0.5 12.5 1.25 150 - 55 to +150 TC = 25°C TA = 25°C V V V A A A W W °C °C Electrical Characteristics Values are at TC = 25°C unless otherwise noted. Symbol VCEO(sus) ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on) Parameter Test Condition BD135 BD137 BD139 Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage IC = 30 mA, IB = 0 VCB = 30 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 5 mA VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 150 mA IC = 500 mA, IB = 50 mA VCE = 2 V, IC = 0.5 A Min. Typ. Max. 45 60 80 25 25 40 Units V 0.1 10 μA μA 250 0.5 1 V V hFE Classification Classification 6 10 16 hFE3 40 ~ 100 63 ~ 160 100 ~ 250 © 2007 Fairchild Semiconductor Corporation BD135 / 137 / 139 Rev. 1.2.0 www.fairchildsemi.com 2 BD135 / 137 / 139 — Features Absolute Maximum Ratings BD135 / 137 / 139 — Features Typical Performance Characteristics 100 500 60 50 40 30 20 10 100 350 300 250 200 150 100 50 0 1E-3 0 10 400 IB 70 450 IC = 20 IB hFE, DC CURRENT GAIN 80 IC = 10 VCE(sat)[mV], SATURATION VOLTAGE V CE = 2V 90 1000 Figure 1. DC current Gain 0.1 1 10 Figure 2. Collector-Emitter Saturation Voltage 10 1.1 1.0 IC MAX. (Pulsed) ) (on V V BE =5 V CE 0.7 0.6 0.5 0.4 0.3 1 100us 0.1 BD139 BD137 BD135 IC[A], COLLECTOR CURRENT 0.8 10us IC MAX. (Continuous) s 1m t) (sa V BE 0 I B 1 IC = 0.9 DC VBE[V], BASE-EMITTER VOLTAGE 0.01 IC[A], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT 0.2 0.01 0.1 1E-3 0.01 0.1 1 1 10 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Voltage Figure 4. Safe Operating Area 20.0 PC[W], POWER DISSIPATION 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Power Derating © 2007 Fairchild Semiconductor Corporation BD135 / 137 / 139 Rev. 1.2.0 www.fairchildsemi.com 3 BD135 / 137 / 139 — Features Physical Dimensions TO-126 3L 0$; ' ; ; 352'8&7,21 7(50,1$/ /(1*7+' &2'( 76678 7678 127(6 121( $7+,63$&.$*('2(6127&203/<72$1< 67'/(1*7+ &85(173$&.$*,1*67$1'$5' %$//',0(16,216$5(,10,//,0(7(56 &',0(16,216$5((;&/86,9(2)%855602/')/$6+ $1'7,(%$5(;7586,216 ')257(50,1$//(1*7+6((7$%/( ('5$:,1*),/(1$0($1'5(9,6,210.772$$UHY Figure 6. TO-126 (SOT-32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/TO/TO126AA.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-TO126AA_BK.pdf. © 2007 Fairchild Semiconductor Corporation BD135 / 137 / 139 Rev. 1.2.0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool¥ AccuPower¥ AX-CAP®* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ FPS¥ F-PFS¥ FRFET® SM Global Power Resource GreenBridge¥ Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ Making Small Speakers Sound Louder and Better™ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ mWSaver® OptoHiT¥ OPTOLOGIC® OPTOPLANAR® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series¥ ® FACT FAST® FastvCore¥ FETBench¥ Sync-Lock™ ® PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ¥ Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥ Solutions for Your Success¥ SPM® STEALTH¥ SuperFET® SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS® SyncFET¥ ®* TinyBoost® ® TinyBuck TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TranSiC¥ TriFault Detect¥ TRUECURRENT®* PSerDes¥ ® UHC Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ VoltagePlus¥ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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