KSP44/45 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor • Collector-Emitter Voltage: VCEO = KSP44: 400V KSP45: 350V • Collector Power Dissipation: PC(max) = 625mW 1 TO-92 1. Emitter 2. Base 3. Collector Ordering Information Part Number Top Mark Package Packing Method KSP44BU KSP44 TO-92 3L Bulk KSP44TA KSP44 TO-92 3L Ammo KSP44TF KSP44 TO-92 3L Tape and Reel KSP45TA KSP45 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VCBO Collector-Base Voltage Parameter : KSP44 : KSP45 500 400 V V VCEO Collector-Emitter Voltage : KSP44 : KSP45 400 350 V V VEBO Emitter-Base Voltage 6 V 300 mA Junction Temperature 150 C Storage Temperature -55 to 150 C Value Unit IC Collector Current TJ TSTG Thermal Characteristics Symbol Parameter PC Collector Power Dissipation (TA = 25C) 625 mW PC Collector Power Dissipation (TC = 25C) 1.5 W RJC Thermal Resistance, Junction to Case 83.3 C/W RJA Thermal Resistance, Junction to Ambient 200 C/W © 2002 Fairchild Semiconductor Corporation KSP44/45 Rev. A3 www.fairchildsemi.com 1 KSP44/45 — NPN Epitaxial Silicon Transistor October 2012 Values are at Ta = 25C unless otherwise noted. Symbol Parameter Conditions Max. Unit BVCBO Collector-Base Breakdown Voltage : KSP44 : KSP45 BVCEO Collector -Emitter Breakdown Voltage(1) IC = 1mA, IB = 0 : KSP44 : KSP45 BVEBO Emitter-Base Breakdown Voltage IE = 100A, IC = 0 ICBO Collector Cut-off Current : KSP44 : KSP45 VCB = 400V, IE = 0 VCB = 320V, IE = 0 0.1 0.1 A A ICES Collector Cut-off Current : KSP44 : KSP45 VCE = 400V, IB = 0 VCE = 320V, IB = 0 0.5 0.5 A A IEBO Emitter Cut-off Current VEB = 4V, IC = 0 0.1 A hFE (1) DC Current Gain IC = 100A, IB = 0 Min. VCE = 10V, IC = 1mA VCE = 10V, IC = 10mA VCE = 10V, IC = 50mA VCE = 10V, IC = 100mA 500 400 V V 400 350 V V 6 V 40 50 45 40 200 VCE (sat) Collector-Emitter Saturation Voltage(1) IC = 1mA, IB = 0.1mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA 0.4 0.5 0.75 V V V VBE (sat) Base-Emitter Saturation Voltage(1) IC = 10mA, IB = 1mA 0.75 V Output Capacitance VCB = 20V, IE = 0, f = 1MHz 7 pF Cob Note: 1. Pulse Test: PW 300s, Duty Cycle 2%. © 2002 Fairchild Semiconductor Corporation KSP44/45 Rev. A3 www.fairchildsemi.com 2 KSP44/45 — NPN Epitaxial Silicon Transistor Electrical Characteristics 160 10 VCE=10V VCC=150V IC/IB=10 Ta=25℃ VBE(off)=4V 140 100 80 t[us], TIME hFE, DC CURRENT GAIN 120 60 40 1 20 0 tf -20 td -40 1 10 100 1000 0.1 10000 1 10 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Turn-On Switching Times 1000 100 Ta=25℃ f=1MHz Cib[pF],Cob[pF], CAPACITANCE VCC=150V IC/IB=10 Ta=25℃ t[us], TIME 10 ts 1 tf 1 10 100 Cib 10 100 Figure 3. Turn-Off Switching Times VCE[V] COLLECTOR EMITTER VOLTAGE 0.8 [V], VOLTAGE VBE(sat) @IC/IB=10 VBE(on) @VCE=10V 0.4 0.0 0.1 VCE(sat)@IC/IB=10 1 10 100 100 0.5 IC=10mA IC=1mA 1000 IC=50mA Ta=25℃ 0.4 0.3 0.2 0.1 0.0 10 1000 100 1000 10000 100000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 5. On Voltage Figure 6. Collector Saturation Region © 2002 Fairchild Semiconductor Corporation KSP44/45 Rev. A3 10 Figure 4. Capacitance Ta=25℃ 0.2 1 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT 0.6 Cob 1 0.1 0.1 1.0 100 www.fairchildsemi.com 3 KSP44/45 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics 100000 Valid for Duty Cycle ≤ 10% VCE=10V f=10MHz Ta=25℃ IC[mA], COLLECTOR CURRENT hFE, SMALL SIGNAL CURRENT GAIN 100 10 1 0.1 0.1 1000 10 100 1s Tc 100 Ta IC[mA], COLLECTOR CURRENT =2 =2 5℃ 5℃ 10 MSPA44 1 1000 100us 1ms 1 1 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. High-Frequency Current Gain Figure 8. Safe Operating Area © 2002 Fairchild Semiconductor Corporation KSP44/45 Rev. A3 10000 www.fairchildsemi.com 4 KSP44/45 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics (Continued) KSP44/45 — NPN Epitaxial Silicon Transistor Physical Dimensions TO-92 D Figure 9. 3-Lead, TO-92, Molded, Standard Straight Lead, Bulk Type Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/products/discrete/pdf/to92pdd_tr.pdf. © 2002 Fairchild Semiconductor Corporation KSP44/45 Rev. A3 www.fairchildsemi.com 5 KSP44/45 — NPN Epitaxial Silicon Transistor Physical Dimensions (Continued) TO-92 D Figure 10. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/products/discrete/pdf/to92pdd_tr.pdf. © 2002 Fairchild Semiconductor Corporation KSP44/45 Rev. A3 www.fairchildsemi.com 6 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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