M54HC133 M74HC133 13 INPUT NAND GATE . . . . . . . . HIGH SPEED tPD = 13 ns (TYP.) at VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) at TA = 25° C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OutpuT IMPEDANCE |IOH| = IOL = 4 mA (MIN.) BALANCED PROPAGATION DELAYS tPLH = tPHL WIDE OPERATING VOLTAGE RANGE VCC (OPR) = 2 V to 6 V PIN AND FUNCTION COMPATIBLE WITH 54/74LS133 B1R (Plastic Package) F1R (Ceramic Package) M1R (Micro Package) C1R (Chip Carrier) ORDER CODES : M54HC133F1R M74HC133M1R M74HC133B1R M74HC133C1R PIN CONNECTIONS (top view) DESCRIPTION The M54/74HC133 is a high speed CMOS 13INPUT NAND GATE fabricated in silicon gate 2 C MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 7 stages including buffer output, which gives high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage. INPUT AND OUTPUT EQUIVALENT CIRCUIT NC = No Internal Connection October 1992 1/10 M54/M74HC133 TRUTH TABLE PIN DESCRIPTION A B C D E F G H I J K L M Y PIN No SYMBOL L X X L X X X X X X X X X X X X X X X X X X X X X X H H X X L X X X X X X X X X X H 1 to 7, 10 to 15 9 A to G, H to M Y Data Output 8 GND Ground (0V) 16 VCC Positive Supply Voltage X X X X X X L X X L X X X X X X X X X X X X X X X X H H X X X X X L X X X X X X X H X X X X X X L X X X X X X H X X X X X X X L X X X X X H X X X X X X X X X X X X X X X X L X X L X X X X X X H H X X X X X X X X X X L X X H X X X X X X X X X X X X X X X X X X X X X X L X X L H H H H H H H H H H H H H H H L X: Don’t Care LOGIC DIAGRAM (1/2 Package) 2/10 IEC LOGIC SYMBOL NAME AND FUNCTION Data Inputs M54/M74HC133 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCC VI Supply Voltage DC Input Voltage -0.5 to +7 -0.5 to VCC + 0.5 V V VO DC Output Voltage -0.5 to VCC + 0.5 V IIK IOK DC Input Diode Current DC Output Diode Current ± 20 ± 20 mA mA IO DC Output Source Sink Current Per Output Pin ± 25 mA DC VCC or Ground Current ± 50 mA 500 (*) mW ICC or IGND PD Power Dissipation Tstg TL Storage Temperature Lead Temperature (10 sec) -65 to +150 300 o o C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied. (*) 500 mW: ≅ 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Supply Voltage Value 2 to 6 Unit V V VI Input Voltage 0 to VCC VO Output Voltage 0 to VCC Top Operating Temperature: M54HC Series M74HC Series tr, tf Input Rise and Fall Time -55 to +125 -40 to +85 VCC = 2 V 0 to 1000 VCC = 4.5 V VCC = 6 V 0 to 500 0 to 400 V o o C C ns 3/10 M54/M74HC133 DC SPECIFICATIONS Test Conditions Symbol VIH V IL V OH Parameter High Level Input Voltage Low Level Input Voltage High Level Output Voltage II ICC 4/10 Low Level Output Voltage Input Leakage Current Quiescent Supply Current TA = 25 C 54HC and 74HC Min. Typ. Max. VCC (V) -40 to 85 oC -55 to 125 oC 74HC 54HC Min. Max. Min. Max. 2.0 1.5 1.5 1.5 4.5 6.0 3.15 4.2 3.15 4.2 3.15 4.2 2.0 0.5 0.5 0.5 1.35 1.35 1.35 6.0 1.8 1.8 1.8 2.0 4.5 6.0 6.0 2.0 Unit V 4.5 4.5 VOL Value o VI = IO=-20 µA VIH or V IL IO=-4.0 mA 1.9 2.0 1.9 1.9 4.4 5.9 4.5 6.0 4.4 5.9 4.4 5.9 4.18 4.31 4.13 4.10 IO=-5.2 mA 5.68 5.8 0.0 5.63 0.1 0.1 0.1 V V 5.60 0.0 0.1 0.1 0.1 6.0 4.5 VI = IO= 20 µA VIH or V IL IO= 4.0 mA 0.0 0.17 0.1 0.26 0.1 0.33 0.1 0.40 6.0 IO= 5.2 mA 0.18 0.26 0.33 0.40 VI = VCC or GND ±0.1 ±1 ±1 µA VI = VCC or GND 1 10 20 µA 4.5 6.0 6.0 V M54/M74HC133 AC ELECTRICAL CHARACTERISTICS (C L = 50 pF, Input t r = tf = 6 ns) Test Conditions Value Symbol Parameter VCC (V) TA = 25 oC 54HC and 74HC Min. Typ. Max. -40 to 85 oC -55 to 125 oC 74HC 54HC Min. Max. Min. Max. tTLH tTHL Output Transition Time 2.0 30 75 95 110 4.5 6.0 8 7 15 13 19 16 22 19 tPLH tPHL Propagation Delay Time 2.0 42 130 165 195 4.5 16 26 33 39 6.0 14 22 28 33 CIN Input Capacitance 5 10 10 10 CPD (*) Power Dissipation Capacitance 29 Unit ns ns pF pF (*) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC(opr) = CPD •VCC •fIN + ICC SWITCHING CHARACTERISTICS TEST CIRCUIT TEST CIRCUIT ICC (Opr.) INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICS TEST. 5/10 M54/M74HC133 Plastic DIP16 (0.25) MECHANICAL DATA mm DIM. MIN. a1 0.51 B 0.77 TYP. inch MAX. MIN. TYP. MAX. 0.020 1.65 0.030 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 17.78 0.700 F 7.1 0.280 I 5.1 0.201 L Z 3.3 0.130 1.27 0.050 P001C 6/10 M54/M74HC133 Ceramic DIP16/1 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 20 0.787 B 7 0.276 D E 3.3 0.130 0.38 e3 0.015 17.78 0.700 F 2.29 2.79 0.090 0.110 G 0.4 0.55 0.016 0.022 H 1.17 1.52 0.046 0.060 L 0.22 0.31 0.009 0.012 M 0.51 1.27 0.020 0.050 N P Q 10.3 7.8 8.05 5.08 0.406 0.307 0.317 0.200 P053D 7/10 M54/M74HC133 SO16 (Narrow) MECHANICAL DATA mm DIM. MIN. TYP. A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.2 a2 MAX. 0.004 0.007 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45° (typ.) D 9.8 E 5.8 10 0.385 6.2 0.228 0.393 0.244 e 1.27 0.050 e3 8.89 0.350 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M S 0.62 0.024 8° (max.) P013H 8/10 M54/M74HC133 PLCC20 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 9.78 10.03 0.385 0.395 B 8.89 9.04 0.350 0.356 D 4.2 4.57 0.165 0.180 d1 2.54 0.100 d2 0.56 0.022 E 7.37 8.38 0.290 0.330 e 1.27 0.050 e3 5.08 0.200 F 0.38 0.015 G 0.101 0.004 M 1.27 0.050 M1 1.14 0.045 P027A 9/10 M54/M74HC133 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 10/10