MMSD485B Small Signal Diode SOD123 Color Band Denotes Cathode Top Marking: 28 Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units VRRM Maximum Repetitive Reverse Voltage 100 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 1.0 4.0 A A -55 to +150 °C 150 °C TSTG TJ Parameter Storage Temperature Range Operating Junction Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA Value Units Power Dissipation Parameter 400 mW Thermal Resistance, Junction to Ambient 312 °C/W Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min. Max. 200 Units VR Breakdown Voltage IR = 100μA VF Forward Voltage IF = 100mA 1.0 V IR Reverse Leakage VR = 180V VR = 180V, TA = 150°C 25 5.0 nA μA CT Total Capacitance VR = 0, f = 1.0MHz 6.0 pF © 2011 Fairchild Semiconductor Corporation MMSD485B Rev. A0 V www.fairchildsemi.com 1 MMSD485B — Small Signal Diode August 2011 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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